公开(公告)号：US08027533B2

公开(公告)日：2011-09-27

申请号：US12077659

申请日：2008-03-19

申请人： Wenjing Li ,  Marcelo Soto-Thompson ,  Ulf Gustafsson ,  Holger Lange

发明人： Wenjing Li ,  Marcelo Soto-Thompson ,  Ulf Gustafsson ,  Holger Lange

IPC分类号： G06K9/00

CPC分类号： H04N1/6033 ,  H04N1/00045 ,  H04N1/401 ,  H04N1/6086

摘要： A method of automated image calibration that corrects for non-uniform illumination and calibrates color that is simple, fast, automated, accurate and reliable. A gray balance algorithm is applied to correct for non-uniform illumination and a color calibration algorithm is then applied to calibrate the human subject data. The system has been applied in multiple clinical sites with different instruments.

摘要翻译： 一种自动图像校准方法，用于校正不均匀照明并校准简单，快速，自动，准确和可靠的颜色。 应用灰度平衡算法来校正不均匀照明，然后应用颜色校准算法来校准人类受试者数据。 该系统已应用于具有不同仪器的多个临床部位。

公开(公告)号：US20080240558A1

公开(公告)日：2008-10-02

申请号：US12077659

申请日：2008-03-19

申请人： Wenjing Li ,  Marcelo Soto-Thompson ,  Ulf Gustafsson ,  Holger Lange

发明人： Wenjing Li ,  Marcelo Soto-Thompson ,  Ulf Gustafsson ,  Holger Lange

IPC分类号： G06K9/00

CPC分类号： H04N1/6033 ,  H04N1/00045 ,  H04N1/401 ,  H04N1/6086

摘要： A method of automated image calibration that corrects for non-uniform illumination and calibrates color that is simple, fast, automated, accurate and reliable. A gray balance algorithm is applied to correct for non-uniform illumination and a color calibration algorithm is then applied to calibrate the human subject data. The system has been applied in multiple clinical sites with different instruments.

摘要翻译： 一种自动图像校准方法，用于校正不均匀照明并校准简单，快速，自动，准确和可靠的颜色。 应用灰度平衡算法来校正不均匀照明，然后应用颜色校准算法来校准人类受试者数据。 该系统已应用于具有不同仪器的多个临床部位。

公开(公告)号：US08351667B2

公开(公告)日：2013-01-08

申请号：US12228739

申请日：2008-08-15

申请人： Wenjing Li ,  Sankar Venkataraman ,  Ulf Gustafsson ,  John Taylor Hargrove

发明人： Wenjing Li ,  Sankar Venkataraman ,  Ulf Gustafsson ,  John Taylor Hargrove

IPC分类号： G06K9/18

CPC分类号： G06T5/30 ,  G06T5/009 ,  G06T2207/30004 ,  G06T2207/30068

摘要： A method of contrast enhancement for improved visualization of diagnostically important tissue structures, such as blood vessels. A texture analysis algorithm is applied to identify regions with a high likelihood of disease. Mathematical morphology operations are applied to identify areas of high and low brightness (intensity). The low intensity areas are then subtracted, and controllably variable amounts of the high intensity areas are added, controlled by a selectable tuning parameter, to produce an image with controllably variable visualization enhancement.

摘要翻译： 一种对比度增强的方法，用于改善诊断上重要的组织结构如血管的可视化。 应用纹理分析算法识别疾病可能性高的地区。 应用数学形态学操作来识别高亮度和低亮度（强度）的区域。 然后减去低强度区域，并且通过可选择的调谐参数来控制可变量的高强度区域，以产生具有可控地可变的可视化增强的图像。

公开(公告)号：US20100040263A1

公开(公告)日：2010-02-18

申请号：US12228739

申请日：2008-08-15

申请人： Wenjing Li ,  Sankar Venkataraman ,  Ulf Gustafsson ,  John Taylor Hargrove

发明人： Wenjing Li ,  Sankar Venkataraman ,  Ulf Gustafsson ,  John Taylor Hargrove

IPC分类号： A61B5/00

CPC分类号： G06T5/30 ,  G06T5/009 ,  G06T2207/30004 ,  G06T2207/30068

摘要： A method of contrast enhancement for improved visualization of diagnostically important tissue structures, such as blood vessels. A texture analysis algorithm is applied to identify regions with a high likelihood of disease. Mathematical morphology operations are applied to identify areas of high and low brightness (intensity). The low intensity areas are then subtracted, and controllably variable amounts of the high intensity areas are added, controlled by a selectable tuning parameter, to produce an image with controllably variable visualization enhancement.

摘要翻译： 一种对比度增强的方法，用于改善诊断上重要的组织结构如血管的可视化。 应用纹理分析算法识别疾病可能性高的地区。 应用数学形态学操作来识别高亮度和低亮度（强度）的区域。 然后减去低强度区域，并且通过可选择的调谐参数来控制可变量的高强度区域，以产生具有可控地可变的可视化增强的图像。

公开(公告)号：US20050111758A1

公开(公告)日：2005-05-26

申请号：US10895440

申请日：2003-08-15

申请人： Holger Lange ,  Ulf Gustafsson

发明人： Holger Lange ,  Ulf Gustafsson

IPC分类号： G06K9/00 ,  G06K9/32 ,  G06T7/00

CPC分类号： G06T7/33 ,  G06T2207/30004

摘要： The image registration systems and methods according to this invention register reflectance and fluorescence hyperspectral imagery and provide the spatial image transformation between the reflectance and fluorescence hyperspectral imagery. A reflectance image is embedded into the fluorescence hyperspectral imagery and thereby resolves the resemblance problem of reflectance and fluorescence hyperspectral imagery. The reflectance image is embedded into the fluorescence hyperspectral imagery using (1) light from a narrow-band source embedded in Ultraviolet (UV) excitation light, (2) second order diffracted light, and/or (3) Ultraviolet (UV) excitation light reflectance. Resembling reflectance images are calculated from the reflectance hyperspectral imagery and the embedded reflectance image in the fluorescence hyperspectral imagery. The two respective reflectance images are pre-processed to maximize the resemblance between them. Image registration algorithms use the two pre-processed reflectance images and calculate the spatial image transformation that allows to map the spatial coordinates from the reflectance to the fluorescence hyperspectral imagery (and vice versa).

摘要翻译： 根据本发明的图像配准系统和方法记录反射率和荧光高光谱图像，并提供反射率和荧光高光谱图像之间的空间图像转换。 反射图像被嵌入到荧光高光谱图像中，从而解决了反射和荧光高光谱图像的相似问题。 使用（1）来自嵌入紫外（UV）激发光的窄带光源，（2）二次衍射光和/或（3）紫外（UV）激发光）的光，将反射率图像嵌入到荧光高光谱图像中 反射率。 从反射高光谱图和荧光高光谱图像中嵌入的反射率图像计算反射率图像。 两个相应的反射率图像被预处理以最大化它们之间的相似性。 图像配准算法使用两个预处理的反射图像，并计算允许将反射率的空间坐标映射到荧光高光谱图像（反之亦然）的空间图像变换。

公开(公告)号：US5967795A

公开(公告)日：1999-10-19

申请号：US520689

申请日：1995-08-30

申请人： Mietek Bakowsky ,  Bo Bijlenga ,  Ulf Gustafsson ,  Christopher Harris ,  Susan Savage

发明人： Mietek Bakowsky ,  Bo Bijlenga ,  Ulf Gustafsson ,  Christopher Harris ,  Susan Savage

IPC分类号： H01L29/06 ,  H01L29/16 ,  H01L29/24 ,  H01L29/861 ,  H01L21/20

CPC分类号： H01L29/1608 ,  H01L29/0615 ,  H01L29/0661 ,  H01L29/8611 ,  H01L2924/0002 ,  Y10S438/931

摘要： A semiconductor component comprises a pn junction in which both the p-conducting and the n-conducting layers of the pn junction are doped silicon carbide layers and the edge of at least one of the conducting layers of the pn junction exhibits a stepwise or uniformly decreasing total charge or effective surface charge density from the initial value at the defined working junction to a zero or almost zero total charge at the outermost edge of the junction following a radial direction from the central part of the junction towards its outermost edge.

摘要翻译： 半导体部件包括pn结，其中pn结的p导电层和n导电层都是掺杂的碳化硅层，并且pn结的至少一个导电层的边缘呈逐步或均匀地减小 总电荷或有效表面电荷密度从在限定的工作结点处的初始值到在从结点的中心部分到其最外边缘的径向方向上的结的最外边缘处的零或几乎为零的总电荷。

公开(公告)号：US5932894A

公开(公告)日：1999-08-03

申请号：US883106

申请日：1997-06-26

申请人： Mietek Bakowski ,  Ulf Gustafsson ,  Christopher I. Harris

发明人： Mietek Bakowski ,  Ulf Gustafsson ,  Christopher I. Harris

IPC分类号： H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/739 ,  H01L29/76 ,  H01L29/78 ,  H01L29/80 ,  H01L29/861 ,  H01L31/0256 ,  H01L31/0312

CPC分类号： H01L29/1608 ,  H01L29/0619 ,  H01L29/0657 ,  H01L29/7606

摘要： A semiconductor device of planar structure, comprises a pn junction, formed of a first type conducting layer and on top thereof a second type conducting layer, both layers of doped silicon carbide, the edge of the second of the layers being provided with an edge termination (JTE), enclosing stepwise or continuously decreasing effective sheet charge density towards the outer border of the termination, wherein the pn junction and its JTE are covered by a doped or undoped SiC third layer.

摘要翻译： 平面结构的半导体器件包括由第一类型导电层形成的pn结，并且在其顶部具有第二导电层，两层掺杂碳化硅，第二层的边缘设置有边缘终端 （JTE），围绕端接的外边界逐步或连续地降低有效片电荷密度，其中pn结及其JTE由掺杂或未掺杂的SiC第三层覆盖。

公开(公告)号：US06201280B1

公开(公告)日：2001-03-13

申请号：US09019715

申请日：1998-02-06

申请人： Mietek Bakowski ,  Ulf Gustafsson

发明人： Mietek Bakowski ,  Ulf Gustafsson

IPC分类号： H01L2976

CPC分类号： H01L29/7802 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/7397

摘要： A transistor of SiC for high voltage and high switching frequency applications is a MISFET or an IGBT. This transistor comprises a plurality of laterally spaced active regions. The center to center distance of two adjacent active regions defines a lateral width of a cell of the transistor. The relation of the lateral width of an accumulation region defined as the region in the drift layer connecting to a gate-insulating layer in each individual cell and the lateral cell width is selected so as to keep the power losses in the transistor as a consequence of switching below a determined proportion to the power losses relating to conduction of the transistor for a predetermined switching frequency and on-state voltage for which the transistor is designed.

摘要翻译： 用于高压和高开关频率应用的SiC晶体管是MISFET或IGBT。 该晶体管包括多个横向间隔开的有源区。 两个相邻有源区域的中心到中心距离限定晶体管的单元的横向宽度。 选择定义为连接到每个单电池中的栅极绝缘层的漂移层中的区域的横向宽度与横向电池宽度之间的关系，以便将晶​​体管中的功率损耗保持为 在与晶体管设计的预定开关频率和导通状态电压相关的与晶体管的导通相关的功率损耗下，切换低于确定的比例。

公开(公告)号：US6150671A

公开(公告)日：2000-11-21

申请号：US636943

申请日：1996-04-24

申请人： Christopher Harris ,  Ulf Gustafsson ,  Mietek Bakowski

发明人： Christopher Harris ,  Ulf Gustafsson ,  Mietek Bakowski

IPC分类号： H01L21/04 ,  H01L29/08 ,  H01L29/10 ,  H01L29/24 ,  H01L29/78 ,  H01L29/22

CPC分类号： H01L29/7813 ,  H01L29/66068 ,  H01L29/0847 ,  H01L29/1095 ,  H01L29/1608 ,  Y10S438/931

摘要： A transistor of SiC having a drain and a highly doped substrate layer is formed on the drain. A highly n type buffer layer may optionally be formed on the substrate layer. A low doped n-type drift layer, a p-type base layer, a high doped n-type source region layer and a source are formed on the substrate layer. An insulating layer with a gate electrode is arranged on top of the base layer and extends substantially laterally from at least the source region layer to a n-type layer. When a voltage is applied to the gate electrode, a conducting inversion channel is formed extending substantially laterally in the base layer at an interface of the p-type base layer and the insulating layer. The p-type base layer is low doped in a region next to the interface to the insulating layer at which the inversion channel is formed and highly doped in a region thereunder next to the drift layer.

摘要翻译： 在漏极上形成具有漏极和高掺杂衬底层的SiC晶体管。 可以可选地在衬底层上形成高度n型缓冲层。 在衬底层上形成低掺杂n型漂移层，p型基极层，高掺杂n型源区域层和源极。 具有栅极电极的绝缘层布置在基层的顶部上，并且至少从源极区域基本上横向延伸到n型层。 当向栅电极施加电压时，在p型基极层和绝缘层的界面处，在基极层中基本上横向延伸形成导电反转沟道。 p型基层在与形成反型沟道的绝缘层的界面旁边的区域中低掺杂，并且在漂移层旁边的区域中高度掺杂。

公开(公告)号：US6091108A

公开(公告)日：2000-07-18

申请号：US971682

申请日：1997-11-17

申请人： Christopher Harris ,  Bo Bijlenga ,  Lennart Zdansky ,  Ulf Gustafsson ,  Mietek Bakowski ,  Andrey Konstantinov

发明人： Christopher Harris ,  Bo Bijlenga ,  Lennart Zdansky ,  Ulf Gustafsson ,  Mietek Bakowski ,  Andrey Konstantinov

IPC分类号： H01L29/16 ,  H01L21/04 ,  H01L29/06 ,  H01L29/12 ,  H01L29/24 ,  H01L29/78 ,  H01L29/745

CPC分类号： H01L29/66068 ,  H01L29/0623 ,  H01L29/0634 ,  H01L29/1608 ,  H01L29/7395 ,  H01L29/7802 ,  H01L29/7813

摘要： A semiconductor device of SiC is adapted to hold high voltages in the blocking state thereof. The device comprises two parts (1, 2) each comprising one or more semiconductor layers of SiC and connected in series between two opposite terminals of the device, namely a sub-semiconductor device (1) able to withstand only low voltages in the blocking state thereof and a voltage-limiting part (2) able to withstand high voltages in the blocking state of the device and adapted to protect said sub-semiconductor device by taking a major part of the voltage over the device in the blocking state thereof.

摘要翻译： SiC的半导体器件适于在其阻挡状态下保持高电压。 该器件包括两个部分（1,2），每个部分包括一个或多个SiC半导体层，并且串联连接在器件的两个相对端子之间，即能够仅承受阻塞状态的低电压的子半导体器件（1） 以及能够承受器件的阻断状态下的高电压的电压限制部分（2），并且适用于通过在其阻塞状态下将器件的大部分电压占据主要部分来保护所述次半导体器件。