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    Thermally stable photoresists with high sensitivity
    1.
    发明授权
    Thermally stable photoresists with high sensitivity 失效
    热稳定的光致抗蚀剂具有高灵敏度

    公开(公告)号：US4939070A

    公开(公告)日：1990-07-03

    申请号：US215966

    申请日：1988-07-07

    申请人： William R. Brunsvold ,  Ming-Fea Chow ,  Willard E. Conley ,  Dale M. Crockatt ,  Jean M. J. Frechet ,  George J. Hefferon ,  Hiroshi Ito ,  Nancy E. Iwamoto ,  Carlton G. Willson

    发明人： William R. Brunsvold ,  Ming-Fea Chow ,  Willard E. Conley ,  Dale M. Crockatt ,  Jean M. J. Frechet ,  George J. Hefferon ,  Hiroshi Ito ,  Nancy E. Iwamoto ,  Carlton G. Willson

    IPC分类号： G03F7/039

    CPC分类号： G03F7/039 ,  Y10S430/143 ,  Y10S430/168

    摘要： The present invention discloses particular lithographic polymeric materials and methods of using these materials, wherein the polymeric materials have acid labile or photolabile groups pendant to the polymer backbone. The polymeric materials are sufficiently transparent to deep UV radiation to permit deep UV imaging, can be used to produce resist structures having thermal stability at temperatures greater than about 160.degree. C., and are sufficiently resistant to excessive crosslinking when heated to temperatures ranging from about 160.degree. C. to about 250.degree. C. that they remain soluble in common lithographic developers and strippers.The present invention also discloses resists comprising substituted polyvinyl benzoates which, after imaging, exhibit unexpectedly high thermal stability, in terms of plastic flow. These resists cannot be imaged using deep UV because they exhibit such a high degree of opacity below 280 nm; however, they are useful as the top, imaging layer in a bilayer resist process wherein the top layer acts as a mask during deep UV exposure of the bottom layer.

    摘要翻译： 本发明公开了特定的平版印刷聚合物材料和使用这些材料的方法，其中聚合物材料具有垂直于聚合物主链的酸不稳定性或光不稳定性基团。 聚合物材料对于深紫外线辐射具有足够的透明度以允许深紫外成像，可用于生产在大于约160℃的温度下具有热稳定性的抗蚀剂结构，并且当加热至约 160℃至约250℃，它们仍溶于普通的平版印刷显影剂和剥离剂。 本发明还公开了包含取代的聚乙烯基苯甲酸酯的抗蚀剂，其在成像之后，在塑性流动方面表现出意想不到的高热稳定性。 这些抗蚀剂不能使用深紫外成像，因为它们在280nm以下表现出如此高的不透明度; 然而，它们可用作双层抗蚀剂工艺中的顶部成像层，其中顶层在底层的深紫外线曝光期间用作掩模。

    High sensitivity resists having autodecomposition temperatures greater than about 160.degree. C.
    2.
    发明授权
    High sensitivity resists having autodecomposition temperatures greater than about 160.degree. C. 失效
    具有高于160℃自动分解温度的高灵敏度抗蚀剂

    公开(公告)号：US4931379A

    公开(公告)日：1990-06-05

    申请号：US267738

    申请日：1988-11-03

    申请人： William R. Brunsvold ,  Willard E. Conley ,  Dale M. Crockatt ,  Nancy E. Iwamoto

    发明人： William R. Brunsvold ,  Willard E. Conley ,  Dale M. Crockatt ,  Nancy E. Iwamoto

    IPC分类号： G03F7/039

    CPC分类号： G03F7/039

    摘要： The present invention relates to increasing the autodecomposition temperature of particular resists. The resists are comprised of structures having recurrent acid labile groups which are typically pendant to the polymeric backbone. The autodecomposition temperature of a resist is increased by selecting substituent sidechains on the acid labile group which exhibit increased stability. Sidechain structures which provide increased autodecomposition stability include secondary structures capable of forming secondary carbonium ion intermediates and having an available proton adjacent to the carbonium ion formed during cleavage. Moieties which can be used as the secondary sidechain structures include secondary alkyl, including both cyclic and alicyclic alkyl, substituted deactivated secondary benzyl, and 1-(deactivated heterocyclic) secondary alkyl.

    摘要翻译： 本发明涉及增加特定抗蚀剂的自分解温度。 抗蚀剂由具有反复酸性不稳定基团的结构组成，其典型地悬挂于聚合物主链。 通过选择显示出增加的稳定性的酸不稳定基团上的取代基侧链来增加抗蚀剂的自分解温度。 提供增加的自分解稳定性的侧链结构包括能够形成仲碳鎓离子中间体并且具有与裂解期间形成的碳鎓离子相邻的可用质子的二级结构。 可用作次级侧链结构的部分包括仲烷基，包括环状和脂环族烷基，取代的失活的仲苄基和1-（失活的杂环）仲烷基。