摘要:
A circuit arrangement for supplying configuration data in an FPGA device includes a plurality of output flip flops allocated to respective configurable logic cells of the FGPGA device. Each output flip flop comprises at least one data input and one data output and a data input of a first output flip flop of the plurality of output flip flops is switchably connected to a data output of a second output flip flop of the plurality of output flip flops for forming a shift register by means of a switching device integrated in the FPGA device.
摘要:
A mask-programmable logic macro includes at least three input terminals an output terminal and a first set of transistors comprised of at least three transistors formed on a semiconductor substrate, each of the transistors comprising a controllable path and a control terminal. The controllable paths can be connected in series with one another between a first supply terminal and the output terminal by metallizing first metallization regions. The the transistors of the first set of transistors are arranged on the semiconductor substrate in such a way that at least one controllable path of the transistors can be bridged by metallizing one of the first metallization regions. A respective of the input terminals can be connected to a respective of the control terminals by metallizing a second metallization region.
摘要:
A mask-programmable logic macro includes at least three input terminals an output terminal and a first set of transistors comprised of at least three transistors formed on a semiconductor substrate, each of the transistors comprising a controllable path and a control terminal. The controllable paths can be connected in series with one another between a first supply terminal and the output terminal by metallizing first metallization regions. The the transistors of the first set of transistors are arranged on the semiconductor substrate in such a way that at least one controllable path of the transistors can be bridged by metallizing one of the first metallization regions. A respective of the input terminals can be connected to a respective of the control terminals by metallizing a second metallization region.
摘要:
A circuit arrangement for supplying configuration data in an FPGA device includes a plurality of output flip flops allocated to respective configurable logic cells of the FGPGA device. Each output flip flop comprises at least one data input and one data output and a data input of a first output flip flop of the plurality of output flip flops is switchably connected to a data output of a second output flip flop of the plurality of output flip flops for forming a shift register by means of a switching device integrated in the FPGA device.
摘要:
A semiconductor device includes an identification circuit. The identification circuit includes a memory cell which includes a first transistor having a first value of a switching characteristic and a second transistor having a second value of the switching characteristic. The identification circuit is operable to generate a memory-cell-specific identification bit which is dependent on production-dictated differences in the first switching characteristic of the first transistor and the second switching characteristic of the second transistor. The identification circuit further includes a drive circuit for the memory cell. The drive circuit is operable to connect or isolate an upper supply potential and a lower supply potential of the semiconductor device to or from the memory cell independently of one another.
摘要:
A semiconductor device includes an identification circuit. The identification circuit includes a memory cell which includes a first transistor having a first value of a switching characteristic and a second transistor having a second value of the switching characteristic. The identification circuit is operable to generate a memory-cell-specific identification bit which is dependent on production-dictated differences in the first switching characteristic of the first transistor and the second switching characteristic of the second transistor. The identification circuit further includes a drive circuit for the memory cell. The drive circuit is operable to connect or isolate an upper supply potential and a lower supply potential of the semiconductor device to or from the memory cell independently of one another.
摘要:
A latch based memory device includes a plurality of latches and a method of testing the latch based memory device that includes serially connecting the latches with each other so as to form a shift register chain. A bit sequence is input into the shift register chain to shift the bit sequence through the shift register chain. A bit sequence is outputted and shifted through the shift register chain, and the input bit sequence is compared with the output sequence to evaluate the functionality of the latches in a first test phase and to test the remaining structures of the latch based memory device in a second test phase by using, e.g., a conventional scan test approach.
摘要:
A carry-ripple adder having inputs for supplying three input bits of equal significance 2n that are to be summed and two carry bits of equal significance 2n+1 that are also to be summed. A calculated sum bit of significance 2n and two calculated carry bits of equal significance 2n+1 which are higher than the significance 2n of the sum bit are provided at outputs. A final carry-ripple stage VMA may be used even after a reduction to three bits.
摘要翻译:具有输入的输入纹波加法器,其具有用于提供要求和的三个等号有效值的输入比特和两个相等重要性的两个进位比特2 n + 1,也是 被总结。 计算出的有效值的和位2< n>和两个具有相同重要性的计算的进位位2< n + 1< / 2>其高于 在输出端提供和位。 即使在减少到三位之后,也可以使用最终的进位纹波级VMA。
摘要:
A latch based memory device includes a plurality of latches and a method of testing the latch based memory device that includes serially connecting the latches with each other so as to form a shift register chain. A bit sequence is input into the shift register chain to shift the bit sequence through the shift register chain. A bit sequence is outputted and shifted through the shift register chain, and the input bit sequence is compared with the output sequence to evaluate the functionality of the latches in a first test phase and to test the remaining structures of the latch based memory device in a second test phase by using, e.g., a conventional scan test approach.