-
公开(公告)号:US08306084B2
公开(公告)日:2012-11-06
申请号:US12809849
申请日:2008-12-16
申请人: Wolfgang Reill , Soenke Tautz , Peter Brick , Uwe Strauss
发明人: Wolfgang Reill , Soenke Tautz , Peter Brick , Uwe Strauss
IPC分类号: H01S5/00
CPC分类号: H01S5/22 , H01S5/1017 , H01S5/1064 , H01S5/4031
摘要: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active layer having at least two active regions (45) which are suitable for emitting electromagnetic radiation during operation via a side area of the semiconductor layer sequence (10) along an emission direction (90), said side area being embodied as a radiation coupling-out area (12), a respective electrical contact area (30) above each of the at least two active regions (45) on a main surface (14) of the semiconductor layer sequence (10), and a surface structure in the main surface (14) of the semiconductor layer sequence (10), wherein the at least two active regions (45) are arranged in a manner spaced apart from one another in the active layer (40) transversely with respect to the emission direction (90), each of the electrical contact areas (30) has a first partial region (31) and a second partial region (32) having a width that increases along the emission direction (90) toward the radiation coupling-out area (12), the surface structure has, between the at least two electrical contact areas (30), at least one first depression (6) along the emission direction (90) and also second depressions (7), and the first partial regions (31) of the electrical contact areas (30) are in each case arranged between at least two second depressions (7).
摘要翻译: 特别地,激光源包括具有活性层的半导体层序列(10),所述活性层具有至少两个有效区域(45),所述至少两个有源区域(45)适合于在操作期间通过半导体层序列(10)的侧面区域发射电磁辐射, 沿着发射方向(90),所述侧面区域被实施为辐射耦合区域(12),在主表面(14)上的至少两个有源区域(45)上方的相应的电接触区域(30) )和半导体层序列(10)的主表面(14)中的表面结构,其中所述至少两个有源区(45)以彼此间隔开的方式布置 在相对于发射方向(90)横向的有源层(40)中,每个电接触区域(30)具有第一部分区域(31)和第二部分区域(32),其宽度沿着 发射方向(90)朝向辐射 所述表面结构在所述至少两个电接触区域(30)之间具有沿着所述发射方向(90)的至少一个第一凹陷(6)以及所述第二凹陷(7),以及 电接触区域(30)的第一部分区域(31)分别布置在至少两个第二凹陷部分(7)之间。
-
公开(公告)号:US20110051766A1
公开(公告)日:2011-03-03
申请号:US12809849
申请日:2008-12-16
申请人: Wolfgang Reill , Soenke Tautz , Peter Brick , Uwe Strauss
发明人: Wolfgang Reill , Soenke Tautz , Peter Brick , Uwe Strauss
IPC分类号: H01S5/10
CPC分类号: H01S5/22 , H01S5/1017 , H01S5/1064 , H01S5/4031
摘要: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active layer having at least two active regions (45) which are suitable for emitting electromagnetic radiation during operation via a side area of the semiconductor layer sequence (10) along an emission direction (90), said side area being embodied as a radiation coupling-out area (12), a respective electrical contact area (30) above each of the at least two active regions (45) on a main surface (14) of the semiconductor layer sequence (10), and a surface structure in the main surface (14) of the semiconductor layer sequence (10), wherein the at least two active regions (45) are arranged in a manner spaced apart from one another in the active layer (40) transversely with respect to the emission direction (90), each of the electrical contact areas (30) has a first partial region (31) and a second partial region (32) having a width that increases along the emission direction (90) toward the radiation coupling-out area (12), the surface structure has, between the at least two electrical contact areas (30), at least one first depression (6) along the emission direction (90) and also second depressions (7), and the first partial regions (31) of the electrical contact areas (30) are in each case arranged between at least two second depressions (7).
摘要翻译: 特别地,激光源包括具有活性层的半导体层序列(10),所述活性层具有至少两个有效区域(45),所述至少两个有源区域(45)适合于在操作期间通过半导体层序列(10)的侧面区域发射电磁辐射, 沿着发射方向(90),所述侧面区域被实施为辐射耦合区域(12),在主表面(14)上的至少两个有源区域(45)上方的相应的电接触区域(30) )和半导体层序列(10)的主表面(14)中的表面结构,其中所述至少两个有源区(45)以彼此间隔开的方式布置 在相对于发射方向(90)横向的有源层(40)中,每个电接触区域(30)具有第一部分区域(31)和第二部分区域(32),其宽度沿着 发射方向(90)朝向辐射 所述表面结构在所述至少两个电接触区域(30)之间具有沿着所述发射方向(90)的至少一个第一凹陷(6)以及所述第二凹陷(7),以及 电接触区域(30)的第一部分区域(31)分别布置在至少两个第二凹陷部分(7)之间。
-
公开(公告)号:US08964808B2
公开(公告)日:2015-02-24
申请号:US13730363
申请日:2008-12-17
申请人: Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
发明人: Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
CPC分类号: H01S5/1082 , H01S5/0078 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1017 , H01S5/105 , H01S5/1078 , H01S5/1092 , H01S5/22 , H01S2301/02 , H01S2301/166
摘要: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).
摘要翻译: 激光光源特别包括具有有源区(45)和辐射耦合输出区(12)的半导体层序列(10),辐射耦合输出区域(12)具有不同的第一部分区域(121)和第二部分区域(122) 以及滤波器结构(5),其中所述有源区(45)在操作期间产生具有第一波长范围和具有第二波长范围的非相干第二电磁辐射(52)的相干第一电磁辐射(51) 相干第一电磁辐射(51)沿着发射方向(90)由第一部分区域(121)发射,非相干的第二电磁辐射(52)由第一部分区域(121)和第二部分区域 (122),所述第二波长范围包括所述第一波长范围,并且所述滤波器结构(5)至少部分地衰减由所述有源区沿着所述发射方向发射的非相干的第二电磁辐射(52) (90)。
-
公开(公告)号:US20110188530A1
公开(公告)日:2011-08-04
申请号:US12809748
申请日:2008-12-17
申请人: Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
发明人: Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
CPC分类号: H01S5/1082 , H01S5/0078 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1017 , H01S5/105 , H01S5/1078 , H01S5/1092 , H01S5/22 , H01S2301/02 , H01S2301/166
摘要: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).
摘要翻译: 激光光源特别包括具有有源区(45)和辐射耦合输出区(12)的半导体层序列(10),辐射耦合输出区域(12)具有不同的第一部分区域(121)和第二部分区域(122) 以及滤波器结构(5),其中所述有源区(45)在操作期间产生具有第一波长范围和具有第二波长范围的非相干第二电磁辐射(52)的相干第一电磁辐射(51) 相干第一电磁辐射(51)沿着发射方向(90)由第一部分区域(121)发射,非相干的第二电磁辐射(52)由第一部分区域(121)和第二部分区域 (122),所述第二波长范围包括所述第一波长范围,并且所述滤波器结构(5)至少部分地衰减由所述有源区沿着所述发射方向发射的非相干的第二电磁辐射(52) (90)。
-
公开(公告)号:US08369370B2
公开(公告)日:2013-02-05
申请号:US12809748
申请日:2008-12-17
申请人: Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
发明人: Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
IPC分类号: H01S5/00
CPC分类号: H01S5/1082 , H01S5/0078 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1017 , H01S5/105 , H01S5/1078 , H01S5/1092 , H01S5/22 , H01S2301/02 , H01S2301/166
摘要: A laser light source including a semiconductor layer sequence having an active region and a radiation coupling-out area having a first partial region and a second partial region different than the first partial region, and a filter structure. The active region generates, during operation, coherent first electromagnetic radiation having a first wavelength range and incoherent second electromagnetic radiation having a second wavelength range. The coherent first electromagnetic radiation is emitted by the first partial region along an emission direction, and the incoherent second electromagnetic radiation is emitted by the first and second partial regions. The second wavelength range includes the first wavelength range, and the filter structure at least partly attenuates the incoherent second electromagnetic radiation emitted by the active region along the emission direction.
摘要翻译: 包括具有有源区的半导体层序列和具有与第一部分区域不同的第一部分区域和第二部分区域的辐射耦合区域的激光源,以及滤波器结构。 有源区域在操作期间产生具有第一波长范围和具有第二波长范围的非相干第二电磁辐射的相干第一电磁辐射。 相干第一电磁辐射沿着发射方向由第一部分区域发射,并且非相干的第二电磁辐射由第一和第二部分区域发射。 第二波长范围包括第一波长范围,并且滤波器结构至少部分地衰减沿着发射方向由有源区发射的非相干的第二电磁辐射。
-
公开(公告)号:US20130148683A1
公开(公告)日:2013-06-13
申请号:US13730363
申请日:2008-12-17
申请人: Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
发明人: Alfred Lell , Christoph Eichler , Wolfgang Schmid , Soenke Tautz , Wolfgang Reill , Dimitri Dini
CPC分类号: H01S5/1082 , H01S5/0078 , H01S5/028 , H01S5/0282 , H01S5/0286 , H01S5/1017 , H01S5/105 , H01S5/1078 , H01S5/1092 , H01S5/22 , H01S2301/02 , H01S2301/166
摘要: A laser light source comprises, in particular, a semiconductor layer sequence (10) having an active region (45) and a radiation coupling-out area (12) having a first partial region (121) and a second partial region (122) different than the latter, and a filter structure (5), wherein the active region (45) generates, during operation, coherent first electromagnetic radiation (51) having a first wavelength range and incoherent second electromagnetic radiation (52) having a second wavelength range, the coherent first electromagnetic radiation (51) is emitted by the first partial region (121) along an emission direction (90), the incoherent second electromagnetic radiation (52) is emitted by the first partial region (121) and by the second partial region (122), the second wavelength range comprises the first wavelength range, and the filter structure (5) at least partly attenuates the incoherent second electromagnetic radiation (52) emitted by the active region along the emission direction (90).
-
公开(公告)号:US20130128909A1
公开(公告)日:2013-05-23
申请号:US13695249
申请日:2011-05-09
申请人: Harald Koenig , Uwe Strauss , Wolfgang Reill
发明人: Harald Koenig , Uwe Strauss , Wolfgang Reill
CPC分类号: H01S5/30 , H01L33/005 , H01L2924/0002 , H01S5/0201 , H01S5/0283 , H01S5/0425 , H01S5/0625 , H01S5/16 , H01S5/2036 , H01S5/22 , H01S5/4031 , H01L2924/00
摘要: An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.
摘要翻译: 指定边缘发射半导体激光器。 半导体本体包括适于产生电磁辐射的活性区域。 有源区域上的至少两个面形成谐振器。 至少两个接触点在横向方向上彼此间隔开至少一个中间区域,并且安装在半导体本体的外表面上。
-
公开(公告)号:US08831061B2
公开(公告)日:2014-09-09
申请号:US13127887
申请日:2009-10-21
申请人: Christian Lauer , Harald König , Wolfgang Reill , Uwe Strauss
发明人: Christian Lauer , Harald König , Wolfgang Reill , Uwe Strauss
IPC分类号: H01S5/42 , H01S5/12 , H01S5/042 , H01S5/40 , H01S5/22 , H01S5/10 , H01S5/022 , H01S5/20 , H01S5/065
CPC分类号: H01S5/0425 , H01S5/02284 , H01S5/0655 , H01S5/10 , H01S5/1017 , H01S5/1053 , H01S5/1064 , H01S5/1228 , H01S5/1234 , H01S5/1237 , H01S5/2036 , H01S5/2205 , H01S5/4012 , H01S5/4031 , H01S2301/166 , H01S2301/18
摘要: An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.
摘要翻译: 边缘发射半导体激光器芯片包括半导体本体,其包括在半导体激光器芯片的操作期间产生电磁辐射的至少一个有效区域。 至少一个接触条布置在半导体本体的顶侧的顶表面上。 至少两个限定结构用于限定接触片和活动区之间的电流扩展。 分隔结构布置在接触片的两侧。
-
公开(公告)号:US08976829B2
公开(公告)日:2015-03-10
申请号:US13695249
申请日:2011-05-09
申请人: Harald Koenig , Uwe Strauss , Wolfgang Reill
发明人: Harald Koenig , Uwe Strauss , Wolfgang Reill
IPC分类号: H01S5/30 , H01L33/00 , H01S5/042 , H01S5/40 , H01S5/02 , H01S5/028 , H01S5/0625 , H01S5/16 , H01S5/20 , H01S5/22
CPC分类号: H01S5/30 , H01L33/005 , H01L2924/0002 , H01S5/0201 , H01S5/0283 , H01S5/0425 , H01S5/0625 , H01S5/16 , H01S5/2036 , H01S5/22 , H01S5/4031 , H01L2924/00
摘要: An edge-emitting semiconductor laser is specified. A semiconductor body includes an active zone suitable for producing electromagnetic radiation. At least two facets on the active zone form a resonator. At least two contact points are spaced apart from one another in a lateral direction by at least one intermediate region and are mounted on an outer face of the semiconductor body.
摘要翻译: 指定边缘发射半导体激光器。 半导体本体包括适于产生电磁辐射的活性区域。 有源区域上的至少两个面形成谐振器。 至少两个接触点在横向方向上彼此间隔开至少一个中间区域,并且安装在半导体本体的外表面上。
-
公开(公告)号:US20110243169A1
公开(公告)日:2011-10-06
申请号:US13127887
申请日:2009-10-21
申请人: Christian Lauer , Harald König , Wolfgang Reill , Uwe Strauss
发明人: Christian Lauer , Harald König , Wolfgang Reill , Uwe Strauss
IPC分类号: H01S5/42
CPC分类号: H01S5/0425 , H01S5/02284 , H01S5/0655 , H01S5/10 , H01S5/1017 , H01S5/1053 , H01S5/1064 , H01S5/1228 , H01S5/1234 , H01S5/1237 , H01S5/2036 , H01S5/2205 , H01S5/4012 , H01S5/4031 , H01S2301/166 , H01S2301/18
摘要: An edge emitting semiconductor laser chip includes a semiconductor body, which comprises at least one active zone in which electromagnetic radiation is generated during the operation of the semiconductor laser chip. At least one contact strip is arranged on a top surface at a top side of the semiconductor body. At least two delimiting structures are for delimiting the current spreading between the contact strip and the active zone. The delimiting structures are arranged on both sides of the contact strip.
摘要翻译: 边缘发射半导体激光器芯片包括半导体本体,其包括在半导体激光器芯片的操作期间产生电磁辐射的至少一个有效区域。 至少一个接触条布置在半导体本体的顶侧的顶表面上。 至少两个限定结构用于限定接触片和活动区之间的电流扩展。 分隔结构布置在接触片的两侧。
-
-
-
-
-
-
-
-
-