公开(公告)号：US08409896B2

公开(公告)日：2013-04-02

申请号：US13286834

申请日：2011-11-01

申请人： Won Goo Hur ,  Young Chul Shin ,  Gi Bum Kim ,  Seung Woo Choi

发明人： Won Goo Hur ,  Young Chul Shin ,  Gi Bum Kim ,  Seung Woo Choi

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/025 ,  H01L2933/0016

摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a transparent electrode on the p-type nitride semiconductor layer through a sputtering process; and forming a nitrogen gas atmosphere in an interior of a reaction chamber in which the sputtering process is performed, prior to or during the sputtering process.In the case of the semiconductor light emitting device obtained according to embodiments of the invention, a deterioration phenomenon in electrode characteristics caused due to a nitrogen vacancy may be minimized in manufacturing a transparent electrode through a sputtering process to thereby allow for the provision of a transparent electrode having significantly improved electrical characteristics.

摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：通过在衬底上依次生长n型氮化物半导体层，有源层和p型氮化物半导体层来形成发光结构; 通过溅射工艺在p型氮化物半导体层上形成透明电极; 以及在溅射工艺之前或期间在其中进行溅射工艺的反应室的内部形成氮气气氛。 在根据本发明的实施例获得的半导体发光器件的情况下，由于氮空位引起的电极特性的劣化现象在通过溅射工艺制造透明电极时可能被最小化，从而允许提供透明 电极具有显着改善的电特性。

公开(公告)号：US20140197026A1

公开(公告)日：2014-07-17

申请号：US14239109

申请日：2011-08-17

申请人： Young Chul Shin ,  Gi Bum Kim ,  Won Goo Hur

发明人： Young Chul Shin ,  Gi Bum Kim ,  Won Goo Hur

IPC分类号： H01J37/34

CPC分类号： H01J37/3411 ,  C23C14/0641 ,  C23C14/34 ,  H01L31/1884 ,  H01L33/42 ,  Y02E10/50

摘要： There is provided a method for manufacturing a nitride semiconductor light emitting device, including: forming a light emitting structure including first and second conductive nitride semiconductor layers on a substrate and an active layer formed therebetween; forming the first conductive nitride semiconductor layer, the active layer, and the second conductive nitride semiconductor layer in sequence; forming a first electrode connected to the first conductive nitride semiconductor layer; forming a photo-resist layer on the second conductive nitride semiconductor layer so as to expose a portion of the semiconductor layer; and removing the photo-resist layer after a reflective metal layer and a barrier metal layer serving as a second electrode structure are successively formed on the second conductive nitride semiconductor layer exposed by the photo-resist layer.

摘要翻译： 提供了一种用于制造氮化物半导体发光器件的方法，包括：在衬底上形成包括第一和第二导电氮化物半导体层的发光结构和在其间形成的有源层; 依次形成第一导电氮化物半导体层，有源层和第二导电氮化物半导体层; 形成连接到所述第一导电氮化物半导体层的第一电极; 在所述第二导电氮化物半导体层上形成光致抗蚀剂层，以暴露所述半导体层的一部分; 并且在用作第二电极结构的反射金属层和阻挡金属层之后依次形成在由光致抗蚀剂层暴露的第二导电氮化物半导体层上，去除光致抗蚀剂层。

公开(公告)号：US09172000B2

公开(公告)日：2015-10-27

申请号：US13167396

申请日：2011-06-23

申请人： Tae Hun Kim ,  Gi Bum Kim ,  Won Goo Hur ,  Young Sun Kim ,  Ki Sung Kim

发明人： Tae Hun Kim ,  Gi Bum Kim ,  Won Goo Hur ,  Young Sun Kim ,  Ki Sung Kim

IPC分类号： H01L21/00 ,  H01L51/40 ,  H01L33/22 ,  H01L33/00

CPC分类号： H01L33/22 ,  H01L33/0079 ,  H01L2933/0091

摘要： Disclosed are a semiconductor light emitting device and a method of manufacturing the same. The method includes providing a substrate having first and second main surfaces opposing each other and forming a first uneven structure in the first main surface, forming a sacrificial layer on the first main surface of the substrate, forming a mask having open regions on the sacrificial layer so as to expose a portion of an upper surface of the sacrificial layer, forming a second uneven structure in the substrate by etching the sacrificial layer and the substrate through the open regions, removing the sacrificial layer and the mask from the substrate, and forming a light emitting stack on the first and second uneven structures of the substrate.

摘要翻译： 公开了一种半导体发光器件及其制造方法。 该方法包括提供具有彼此相对的第一和第二主表面的衬底，并且在第一主表面中形成第一不平坦结构，在衬底的第一主表面上形成牺牲层，在牺牲层上形成具有开放区域的掩模 以便暴露牺牲层的上表面的一部分，通过通过开放区域蚀刻牺牲层和衬底，在衬底中形成第二不均匀结构，从衬底去除牺牲层和掩模，并形成 发光堆叠在基板的第一和第二不平坦结构上。

公开(公告)号：US08455282B2

公开(公告)日：2013-06-04

申请号：US13162254

申请日：2011-06-16

申请人： Ki Sung Kim ,  Gi Bum Kim ,  Tae Hun Kim ,  Young Chul Shin ,  Young Sun Kim

发明人： Ki Sung Kim ,  Gi Bum Kim ,  Tae Hun Kim ,  Young Chul Shin ,  Young Sun Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/20 ,  H01L2933/0025 ,  H01L2933/0091

摘要： A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion.

摘要翻译： 公开了一种半导体发光二极管（LED）及其制造方法。 制造半导体发光二极管（LED）的方法包括：在具有突起和凹陷的基板上形成包括第一导电半导体层，有源层和第二导电半导体层的发光结构; 从所述发光结构去除所述衬底以暴露对应于所述突起和凹陷的第一凹凸部分; 在第一凹凸部上形成保护层; 去除所述保护层的一部分以暴露所述第一凹凸部的凸部; 以及在所述第一凹凸部的所述凸部上形成第二凹凸部。 半导体发光二极管（LED）包括：包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 形成在所述发光结构上的第一凹凸部，在其凸部具有第二凹凸部; 以及填充所述第一凹凸部的凹部的保护层。

公开(公告)号：US08222131B2

公开(公告)日：2012-07-17

申请号：US12654636

申请日：2009-12-28

申请人： Gi Bum Kim ,  Yun Ki Lee

发明人： Gi Bum Kim ,  Yun Ki Lee

IPC分类号： H01L21/22

CPC分类号： H01L27/14683 ,  H01L27/1464

摘要： Provided is a method of forming an image sensor. The method may include providing a single crystalline semiconductor layer including at least one photodiode onto a support substrate; forming a material layer including dopants on the single crystalline semiconductor layer; and forming a dopant diffusion layer in the single crystalline semiconductor layer by diffusing the dopants of the material layer.

摘要翻译： 提供一种形成图像传感器的方法。 该方法可以包括在支撑衬底上提供包括至少一个光电二极管的单晶半导体层; 在单晶半导体层上形成包含掺杂剂的材料层; 以及通过扩散材料层的掺杂剂在单晶半导体层中形成掺杂剂扩散层。

公开(公告)号：US20100167453A1

公开(公告)日：2010-07-01

申请号：US12654636

申请日：2009-12-28

申请人： Gi Bum Kim ,  Yun Ki Lee

发明人： Gi Bum Kim ,  Yun Ki Lee

IPC分类号： H01L31/0232

CPC分类号： H01L27/14683 ,  H01L27/1464

摘要： Provided is a method of forming an image sensor. The method may include providing a single crystalline semiconductor layer including at least one photodiode onto a support substrate; forming a material layer including dopants on the single crystalline semiconductor layer; and forming a dopant diffusion layer in the single crystalline semiconductor layer by diffusing the dopants of the material layer.

摘要翻译： 提供一种形成图像传感器的方法。 该方法可以包括在支撑衬底上提供包括至少一个光电二极管的单晶半导体层; 在单晶半导体层上形成包含掺杂剂的材料层; 以及通过扩散材料层的掺杂剂在单晶半导体层中形成掺杂剂扩散层。

公开(公告)号：US20120298954A1

公开(公告)日：2012-11-29

申请号：US13480184

申请日：2012-05-24

申请人： Sang Yeon KIM ,  Jong Rak Sohn ,  Gi Bum Kim ,  Su Yeol Lee ,  Yong II Kim

发明人： Sang Yeon KIM ,  Jong Rak Sohn ,  Gi Bum Kim ,  Su Yeol Lee ,  Yong II Kim

IPC分类号： H01L33/06 ,  H01L33/42

CPC分类号： H01L33/42 ,  H01L33/20 ,  H01L33/38 ,  H01L33/44

摘要： There are provided a semiconductor light emitting device and a manufacturing method of the same. The semiconductor light emitting device includes a light emitting structure including first and second conductive semiconductor layers with an active layer interposed therebetween; first and second bonding electrodes connected to the first and second conductive semiconductor layers, respectively; a transparent electrode layer formed on the second conductive semiconductor layer; a plurality of nano structures formed on the transparent electrode layer; and a passivation layer formed to cover the plurality of nano-structures, wherein refractive indexes of the transparent electrode layer, the plurality of nano-structures, and the passivation layer may be sequentially reduced.

摘要翻译： 提供了一种半导体发光器件及其制造方法。 半导体发光器件包括发光结构，该发光结构包括介于其间的有源层的第一和第二导电半导体层; 分别连接到第一和第二导电半导体层的第一和第二接合电极; 形成在所述第二导电半导体层上的透明电极层; 形成在所述透明电极层上的多个纳米结构体; 以及形成为覆盖多个纳米结构的钝化层，其中可以依次减少透明电极层，多个纳米结构和钝化层的折射率。

公开(公告)号：US20120172059A1

公开(公告)日：2012-07-05

申请号：US13173259

申请日：2011-06-30

申请人： Gi Bum Kim ,  Seung Kil Choi ,  Chang Ho Kim

发明人： Gi Bum Kim ,  Seung Kil Choi ,  Chang Ho Kim

IPC分类号： H04W4/02

CPC分类号： G06Q30/0631 ,  G06F16/60

摘要： Provided are a mobile system for automatically recommending contents, a content recommendation system, and a content recommendation method. The mobile system may include a communication unit to receive playlist information of another user based on at least one of a current position and a position set by a user, and a content recommendation unit to recommend at least one content based on the received playlist information.

摘要翻译： 提供了一种用于自动推荐内容的移动系统，内容推荐系统和内容推荐方法。 移动系统可以包括通信单元，用于基于由用户设置的当前位置和位置中的至少一个接收另一用户的播放列表信息;以及内容推荐单元，用于基于所接收的播放列表信息推荐至少一个内容。

公开(公告)号：US08884318B2

公开(公告)日：2014-11-11

申请号：US13034279

申请日：2011-02-24

申请人： Su Yeol Lee ,  Yong Tae Kim ,  Jin Bock Lee ,  Gi Bum Kim

发明人： Su Yeol Lee ,  Yong Tae Kim ,  Jin Bock Lee ,  Gi Bum Kim

IPC分类号： H01L33/08 ,  H01L23/00 ,  H01L27/15 ,  H01L33/30 ,  H01L33/62

CPC分类号： H01L27/156 ,  H01L24/24 ,  H01L27/153 ,  H01L33/30 ,  H01L33/62 ,  H01L2224/48091 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor light emitting device includes a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having an active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a parallel or series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell. The light emitting cells comprise at least one defective light emitting cell, and at least one of the connection parts related to the defective light emitting cell is disconnected.

摘要翻译： 一种半导体发光器件，包括：衬底; 多个发光单元，设置在所述基板的上表面上，所述发光单元各自具有有源层; 形成在所述基板上的多个连接部分，其上形成有发光单元，以将所述发光单元以并联或串联平行结构连接; 以及形成在发光单元的表面上的绝缘层，以防止连接部分和发光单元之间的不期望的连接。 发光单元包括至少一个有缺陷的发光单元，并且与缺陷发光单元有关的至少一个连接部分断开。