公开(公告)号：US08455282B2

公开(公告)日：2013-06-04

申请号：US13162254

申请日：2011-06-16

申请人： Ki Sung Kim ,  Gi Bum Kim ,  Tae Hun Kim ,  Young Chul Shin ,  Young Sun Kim

发明人： Ki Sung Kim ,  Gi Bum Kim ,  Tae Hun Kim ,  Young Chul Shin ,  Young Sun Kim

IPC分类号： H01L21/00

CPC分类号： H01L33/22 ,  H01L33/0066 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/20 ,  H01L2933/0025 ,  H01L2933/0091

摘要： A semiconductor light emitting diode (LED) and a manufacturing method thereof are disclosed. The method for manufacturing a semiconductor light emitting diode (LED) includes: forming a light emission structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on a substrate with prominences and depressions; removing the substrate from the light emission structure to expose a first concavoconvex portion corresponding to the prominences and depressions; forming a protection layer on the first concavoconvex portion; removing a portion of the protection layer to expose a convex portion of the first concavoconvex portion; and forming a second concavoconvex portion on the convex portion of the first concavoconvex portion. The semiconductor light emitting diode (LED) includes: a light emission structure including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a first concavoconvex portion formed on the light emission structure and having a second concavoconvex portion at a convex portion thereof; and a protection layer filling up a concave portion of the first concavoconvex portion.

摘要翻译： 公开了一种半导体发光二极管（LED）及其制造方法。 制造半导体发光二极管（LED）的方法包括：在具有突起和凹陷的基板上形成包括第一导电半导体层，有源层和第二导电半导体层的发光结构; 从所述发光结构去除所述衬底以暴露对应于所述突起和凹陷的第一凹凸部分; 在第一凹凸部上形成保护层; 去除所述保护层的一部分以暴露所述第一凹凸部的凸部; 以及在所述第一凹凸部的所述凸部上形成第二凹凸部。 半导体发光二极管（LED）包括：包括第一导电类型半导体层，有源层和第二导电类型半导体层的发光结构; 形成在所述发光结构上的第一凹凸部，在其凸部具有第二凹凸部; 以及填充所述第一凹凸部的凹部的保护层。

公开(公告)号：US20140197026A1

公开(公告)日：2014-07-17

申请号：US14239109

申请日：2011-08-17

申请人： Young Chul Shin ,  Gi Bum Kim ,  Won Goo Hur

发明人： Young Chul Shin ,  Gi Bum Kim ,  Won Goo Hur

IPC分类号： H01J37/34

CPC分类号： H01J37/3411 ,  C23C14/0641 ,  C23C14/34 ,  H01L31/1884 ,  H01L33/42 ,  Y02E10/50

摘要： There is provided a method for manufacturing a nitride semiconductor light emitting device, including: forming a light emitting structure including first and second conductive nitride semiconductor layers on a substrate and an active layer formed therebetween; forming the first conductive nitride semiconductor layer, the active layer, and the second conductive nitride semiconductor layer in sequence; forming a first electrode connected to the first conductive nitride semiconductor layer; forming a photo-resist layer on the second conductive nitride semiconductor layer so as to expose a portion of the semiconductor layer; and removing the photo-resist layer after a reflective metal layer and a barrier metal layer serving as a second electrode structure are successively formed on the second conductive nitride semiconductor layer exposed by the photo-resist layer.

摘要翻译： 提供了一种用于制造氮化物半导体发光器件的方法，包括：在衬底上形成包括第一和第二导电氮化物半导体层的发光结构和在其间形成的有源层; 依次形成第一导电氮化物半导体层，有源层和第二导电氮化物半导体层; 形成连接到所述第一导电氮化物半导体层的第一电极; 在所述第二导电氮化物半导体层上形成光致抗蚀剂层，以暴露所述半导体层的一部分; 并且在用作第二电极结构的反射金属层和阻挡金属层之后依次形成在由光致抗蚀剂层暴露的第二导电氮化物半导体层上，去除光致抗蚀剂层。

公开(公告)号：US08409896B2

公开(公告)日：2013-04-02

申请号：US13286834

申请日：2011-11-01

申请人： Won Goo Hur ,  Young Chul Shin ,  Gi Bum Kim ,  Seung Woo Choi

发明人： Won Goo Hur ,  Young Chul Shin ,  Gi Bum Kim ,  Seung Woo Choi

IPC分类号： H01L21/00

CPC分类号： H01L33/42 ,  H01L33/025 ,  H01L2933/0016

摘要： There is provided a method of manufacturing a semiconductor light emitting device, the method including: forming a light emitting structure by sequentially growing an n-type nitride semiconductor layer, an active layer, and a p-type nitride semiconductor layer on a substrate; forming a transparent electrode on the p-type nitride semiconductor layer through a sputtering process; and forming a nitrogen gas atmosphere in an interior of a reaction chamber in which the sputtering process is performed, prior to or during the sputtering process.In the case of the semiconductor light emitting device obtained according to embodiments of the invention, a deterioration phenomenon in electrode characteristics caused due to a nitrogen vacancy may be minimized in manufacturing a transparent electrode through a sputtering process to thereby allow for the provision of a transparent electrode having significantly improved electrical characteristics.

摘要翻译： 提供一种制造半导体发光器件的方法，该方法包括：通过在衬底上依次生长n型氮化物半导体层，有源层和p型氮化物半导体层来形成发光结构; 通过溅射工艺在p型氮化物半导体层上形成透明电极; 以及在溅射工艺之前或期间在其中进行溅射工艺的反应室的内部形成氮气气氛。 在根据本发明的实施例获得的半导体发光器件的情况下，由于氮空位引起的电极特性的劣化现象在通过溅射工艺制造透明电极时可能被最小化，从而允许提供透明 电极具有显着改善的电特性。

公开(公告)号：US20130020554A1

公开(公告)日：2013-01-24

申请号：US13553998

申请日：2012-07-20

申请人： Jong In YANG ,  Tae Hyung Kim ,  Young Chul Shin ,  Tae Hyun Lee ,  Sang Yeob Song ,  Tae Hun Kim

发明人： Jong In YANG ,  Tae Hyung Kim ,  Young Chul Shin ,  Tae Hyun Lee ,  Sang Yeob Song ,  Tae Hun Kim

IPC分类号： H01L27/15

CPC分类号： H01L27/15 ,  H01L33/382 ,  H01L2224/16245

摘要： There is provided a semiconductor light emitting device and a light emitting apparatus. The semiconductor light emitting device includes a light emitting diode (LED) part disposed on one region of a light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer; and a Zener diode part disposed on the other region of the light transmissive substrate and including a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer.

摘要翻译： 提供了一种半导体发光器件和发光设备。 半导体发光器件包括：发光二极管（LED）部，其设置在透光基板的一个区域上，并且包括第一导电型半导体层，有源层和第二导电型半导体层; 以及齐纳二极管部，其设置在所述透光性基板的另一区域上，并且包括第一导电型半导体层，有源层和第二导电型半导体层。

公开(公告)号：US20080278556A1

公开(公告)日：2008-11-13

申请号：US12093823

申请日：2007-03-17

申请人： Kwang-Choon Chung ,  Chang Soo Yu ,  Nam Boo Cho ,  Young Chul Shin ,  Baek Song Heo

发明人： Kwang-Choon Chung ,  Chang Soo Yu ,  Nam Boo Cho ,  Young Chul Shin ,  Baek Song Heo

IPC分类号： B41J2/175

CPC分类号： B41J2/1752 ,  B41J2/17513 ,  B41J2/17553 ,  B41J2/17556

摘要： An ink cartridge for printers and ink filling method that can expand the space where the ink is filled, and maintain pressure inside the ink cartridge. The ink cartridge includes a body formed in a predetermined shape and having a filling hold on one surface, a filling chamber where ink is filled inside the body, a discharging chamber connected to the filling chamber, an ink discharging port connected to the discharging chamber through an ink transferring channel, an air chamber connected to the filling chamber to supply air through an air transferring channel, an air suction valve in the air chamber, an air inducing channel that induces exterior air into the air suction valve, a blocking film attached to one surface of the body, a cover installed on another surface of the body, a pressure regulating part on one surface of outer body, which communicates with the filling chamber.

摘要翻译： 一种用于打印机和墨水填充方法的墨盒，其可以扩大填充墨水的空间，并且保持墨盒内部的压力。 墨盒包括形成为预定形状并且在一个表面上具有填充保持的本体，在主体内填充墨的填充室，连接到填充室的排出室，连接到排出室的排墨口，通过 墨水传送通道，连接到填充室以通过空气传送通道供应空气的空气室，空气室中的空气吸入阀，将外部空气引入空气吸入阀的空气引导通道，附着到 主体的一个表面，安装在主体的另一个表面上的盖，与外部主体的一个表面上的压力调节部分，其与填充室连通。

公开(公告)号：US07485583B2

公开(公告)日：2009-02-03

申请号：US11328227

申请日：2006-01-10

申请人： Bum Joon Kim ,  Young Min Kim ,  Young Chul Shin

发明人： Bum Joon Kim ,  Young Min Kim ,  Young Chul Shin

IPC分类号： H01L21/205 ,  C30B25/02

CPC分类号： C23C16/45551 ,  C23C16/45529 ,  C30B25/02 ,  C30B29/68 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02507 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S438/93

摘要： The invention provides a method for fabricating a superlattice semiconductor structure capable of achieving excellent interfacial properties and uniformity. For the superlattice semiconductor structure according to the invention, a substrate is mounted on a susceptor within a process chamber. First and second source gases are supplied simultaneously to two different areas on the susceptor within the chamber to form first and second source gas areas separate from each other. The susceptor is rotated to revolve the substrate through the first and second source gas areas.

摘要翻译： 本发明提供一种制造能够实现优异的界面性能和均匀性的超晶格半导体结构的方法。 对于根据本发明的超晶格半导体结构，衬底安装在处理室内的基座上。 第一和第二源气体被同时供应到腔室内的基座上的两个不同区域，以形成彼此分离的第一和第二源气体区域。 基座被旋转以使基板旋转通过第一和第二源气体区域。

公开(公告)号：US07339966B2

公开(公告)日：2008-03-04

申请号：US11319081

申请日：2005-12-28

申请人： Young Chul Shin

发明人： Young Chul Shin

IPC分类号： H01S5/00

CPC分类号： H01S5/2231 ,  H01S5/2214 ,  H01S5/3054 ,  H01S5/3063 ,  H01S5/3072

摘要： The present invention provides a semiconductor laser device capable of improving reproducibility and electrical properties of the device, and a manufacturing method thereof. The semiconductor laser device according to the invention includes a first p type AlGaInP-based clad layer formed on an active layer, and a second p-type AlGaInP-based clad layer formed on the first p-type AlGaInP-based clad layer and having a ridge structure. The first p-type AlGaInP-based clad layer is Zn-doped with a concentration that restrains Zn diffusion into the active layer, and the second p-type AlGaInP-based clad layer is Mg-doped with a concentration higher than that of the first AlGaInP-based clad layer.

摘要翻译： 本发明提供能够提高器件的再现性和电性能的半导体激光器件及其制造方法。 根据本发明的半导体激光器件包括在有源层上形成的第一p型AlGaInP基覆盖层和形成在第一p型AlGaInP基覆盖层上的第二p型AlGaInP基覆盖层，并且具有 山脊结构。 第一p型AlGaInP基覆层的Zn掺杂浓度抑制Zn扩散到有源层中，第二p型AlGaInP基覆盖层的Mg掺杂浓度高于第一p型AlGaInP基覆盖层 AlGaInP基覆层。

公开(公告)号：US07997708B2

公开(公告)日：2011-08-16

申请号：US12093823

申请日：2007-03-17

申请人： Kwang-Choon Chung ,  Chang Soo Yu ,  Nam Boo Cho ,  Young Chul Shin ,  Baek Song Heo

发明人： Kwang-Choon Chung ,  Chang Soo Yu ,  Nam Boo Cho ,  Young Chul Shin ,  Baek Song Heo

IPC分类号： B41J2/175

CPC分类号： B41J2/1752 ,  B41J2/17513 ,  B41J2/17553 ,  B41J2/17556

摘要： An ink cartridge for printers and ink filling method that can expand the space where the ink is filled, and maintain pressure inside the ink cartridge. The ink cartridge includes a body formed in a predetermined shape and having a filling hold on one surface, a filling chamber where ink is filled inside the body, a discharging chamber connected to the filling chamber, an ink discharging port connected to the discharging chamber through an ink transferring channel, an air chamber connected to the filling chamber to supply air through an air transferring channel, an air suction valve in the air chamber, an air inducing channel that induces exterior air into the air suction valve, a blocking film attached to one surface of the body, a cover installed on another surface of the body, a pressure regulating part on one surface of outer body, which communicates with the filling chamber.

摘要翻译： 一种用于打印机和墨水填充方法的墨盒，其可以扩大填充墨水的空间，并且保持墨盒内部的压力。 墨盒包括形成为预定形状并且在一个表面上具有填充保持的本体，在主体内填充墨的填充室，连接到填充室的排出室，连接到排出室的排墨口，通过 墨水传送通道，连接到填充室以通过空气传送通道供应空气的空气室，空气室中的空气吸入阀，将外部空气引入空气吸入阀的空气引导通道，附着到 主体的一个表面，安装在主体的另一个表面上的盖，与外部主体的一个表面上的压力调节部分，其与填充室连通。

公开(公告)号：US20080284832A1

公开(公告)日：2008-11-20

申请号：US12093812

申请日：2007-03-28

申请人： Kwang-Choon Chung ,  Chang Soo Yu ,  Nam Boo Cho ,  Young Chul Shin ,  Baek Song Heo ,  In-Ha Kim ,  Jae-Won Choi

发明人： Kwang-Choon Chung ,  Chang Soo Yu ,  Nam Boo Cho ,  Young Chul Shin ,  Baek Song Heo ,  In-Ha Kim ,  Jae-Won Choi

IPC分类号： B41J2/175

CPC分类号： B41J2/17556 ,  B41J2/17513 ,  B41J2/17553

摘要： Disclosed is an ink cartridge for a printer, comprising a body having an opened surface and a predetermined shape to receive ink therein; a cover coupled with the body to define a desired space; and a chamber instrument comprising a filling chamber having a space for receiving a part of the ink in the body, a discharging chamber connected with the filling chamber, an ink transferring channel for moving the ink received in the filling chamber to the discharging chamber, an air guiding hold for guiding air to an inside of the cartridge, an air suction valve for selectively passing the guided air and a pressure regulating valve for regulating an internal pressure of the body.

摘要翻译： 公开了一种用于打印机的墨盒，包括具有开口表面和预定形状以在其中接收墨水的本体; 与本体结合以限定所需空间的盖; 以及腔室仪器，其包括填充室，所述填充室具有用于接收所述体内的一部分墨水的空间，与所述填充室连接的排出室，用于将容纳在所述填充室中的墨水移动到所述排出室的墨水输送通道， 用于将空气引导到筒的内部的空气引导保持器，用于选择性地通过引导空气的空气吸入阀和用于调节主体的内部压力的压力调节阀。

公开(公告)号：US08581293B2

公开(公告)日：2013-11-12

申请号：US13223877

申请日：2011-09-01

申请人： Yung Ho Ryu ,  Hae Yeon Hwang ,  Young Chul Shin

发明人： Yung Ho Ryu ,  Hae Yeon Hwang ,  Young Chul Shin

IPC分类号： H01L29/43

CPC分类号： H01L33/38 ,  H01L27/153 ,  H01L33/08 ,  H01L33/20 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62

摘要： A semiconductor light emitting device includes: a first conductive semiconductor layer including first and second areas; an active layer disposed on the second area; a second conductive semiconductor layer disposed on the active layer; first and second electrode branches disposed on the first and second conductive semiconductor layers, respectively; a first electrode pad electrically connected to the first electrode branch and disposed on the first electrode branch; and a second electrode pad electrically connected to the second electrode branch and disposed on the second electrode branch.