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    Device and method for fabricating display device
    1.
    发明授权
    Device and method for fabricating display device 有权
    显示装置制造装置及方法

    公开(公告)号：US08899174B2

    公开(公告)日：2014-12-02

    申请号：US12896496

    申请日：2010-10-01

    申请人： Won-Hyouk Jang ,  Eu-Gene Kang ,  Joo-Hwa Lee ,  Min-Jeong Hwang

    发明人： Won-Hyouk Jang ,  Eu-Gene Kang ,  Joo-Hwa Lee ,  Min-Jeong Hwang

    IPC分类号： C23C16/52 ,  C23C16/448 ,  C23C16/44 ,  C23C16/00 ,  B05C11/00

    CPC分类号： C23C16/00 ,  B05C11/00 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52

    摘要： A device for manufacturing a display device includes a deposition source; a deposition thickness calculator for calculating a deposition thickness of a deposition material deposited on a substrate; and a controller for controlling a power of a heater which heats the deposition source by comparing the deposition thickness calculated with a reference thickness. The controller controls the power of the heater either at least one time for each substrate on which the thin film is to be deposited or at regular intervals while the deposition material is deposited. Influence of measurement noise that is included in a quartz crystal sensor for measuring a deposition speed may be minimized, and distribution of deposition thickness of an organic light emitting material may be reduced, thereby increasing the yield of the deposition process and producing quality display devices.

    摘要翻译： 一种用于制造显示装置的装置包括沉积源; 沉积厚度计算器，用于计算沉积在衬底上的沉积材料的沉积厚度; 以及控制器，用于通过比较用参考厚度计算的沉积厚度来控制加热沉积源的加热器的功率。 控制器对于要沉积薄膜的每个衬底至少一次控制加热器的功率，或者在沉积材料沉积时以规则的间隔控制加热器的功率。 包含在用于测量沉积速度的石英晶体传感器中的测量噪声的影响可以被最小化，并且可以减少有机发光材料的沉积厚度的分布，从而提高沉积工艺的产量并产生高质量的显示装置。

    DEVICE AND METHOD FOR FABRICATING DISPLAY DEVICE
    2.
    发明申请
    DEVICE AND METHOD FOR FABRICATING DISPLAY DEVICE 有权
    用于制造显示装置的装置和方法

    公开(公告)号：US20110189380A1

    公开(公告)日：2011-08-04

    申请号：US12896496

    申请日：2010-10-01

    申请人： Won-Hyouk Jang ,  Eu-Gene Kang ,  Joo-Hwa Lee ,  Min-Jeong Hwang

    发明人： Won-Hyouk Jang ,  Eu-Gene Kang ,  Joo-Hwa Lee ,  Min-Jeong Hwang

    IPC分类号： C23C16/52 ,  C23C16/00

    CPC分类号： C23C16/00 ,  B05C11/00 ,  C23C16/44 ,  C23C16/448 ,  C23C16/52

    摘要： A device for manufacturing a display device includes a deposition source; a deposition thickness calculator for calculating a deposition thickness of a deposition material deposited on a substrate; and a controller for controlling a power of a heater which heats the deposition source by comparing the deposition thickness calculated with a reference thickness. The controller controls the power of the heater either at least one time for each substrate on which the thin film is to be deposited or at regular intervals while the deposition material is deposited. Influence of measurement noise that is included in a quartz crystal sensor for measuring a deposition speed may be minimized, and distribution of deposition thickness of an organic light emitting material may be reduced, thereby increasing the yield of the deposition process and producing quality display devices.

    摘要翻译： 一种用于制造显示装置的装置包括沉积源; 沉积厚度计算器，用于计算沉积在基底上的沉积材料的沉积厚度; 以及控制器，用于通过比较用参考厚度计算的沉积厚度来控制加热沉积源的加热器的功率。 控制器对于要沉积薄膜的每个衬底至少一次控制加热器的功率，或者在沉积材料沉积时以规则的间隔控制加热器的功率。 包含在用于测量沉积速度的石英晶体传感器中的测量噪声的影响可以被最小化，并且可以减少有机发光材料的沉积厚度的分布，从而提高沉积工艺的产量并产生高质量的显示装置。

    System for sputtering and method thereof
    3.
    发明授权
    System for sputtering and method thereof 有权
    溅射系统及其方法

    公开(公告)号：US08658002B2

    公开(公告)日：2014-02-25

    申请号：US12911569

    申请日：2010-10-25

    申请人： Eu-Gene Kang ,  Won-Hyouk Jang

    发明人： Eu-Gene Kang ,  Won-Hyouk Jang

    IPC分类号： C23C14/34

    CPC分类号： C23C14/34 ,  C23C14/545 ,  H01J37/32963 ,  H01J37/3299 ,  H01J37/34

    摘要： A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.

    摘要翻译： 溅射方法包括接收在干蚀刻工艺中检测到的第一衬底的蚀刻时间信息，根据第一衬底的蚀刻时间信息计算第二衬底的沉积时间，以及基于计算的沉积时间执行第二衬底的溅射。 可以通过使用在端点检测（EPD）装置中检测到的蚀刻终点信息，均匀地保持沉积在溅射装置中的基板上的薄膜的厚度。 溅射系统包括用于执行用于通过溅射法在衬底上沉积薄膜的溅射工艺的溅射装置，用于产生EPD信息的EPD装置，包括用于计算沉积时间的衬底的蚀刻时间信息， 以及用于通过使用EPD信息计算沉积时间的控制器，以及基于计算出的沉积时间来控制溅射装置。

    System for Sputtering and Method Thereof
    4.
    发明申请
    System for Sputtering and Method Thereof 有权
    溅射系统及其方法

    公开(公告)号：US20110272275A1

    公开(公告)日：2011-11-10

    申请号：US12911569

    申请日：2010-10-25

    申请人： Eu-Gene Kang ,  Won-Hyouk Jang

    发明人： Eu-Gene Kang ,  Won-Hyouk Jang

    IPC分类号： C23C14/34

    CPC分类号： C23C14/34 ,  C23C14/545 ,  H01J37/32963 ,  H01J37/3299 ,  H01J37/34

    摘要： A sputtering method includes receiving etch time information for a first substrate detected in a dry etching process, calculating a deposition time for a second substrate from the etch time information for the first substrate, and executing sputtering for the second substrate based the calculated deposition time. The thickness of the thin film deposited on the substrate in the sputter device may be uniformly maintained by using etch end point information detected in an end point detection (EPD) device. A sputtering system comprises a sputter device for executing a sputtering process for depositing a thin film on a substrate by a sputtering method, an EPD device for generating EPD information including etch time information for the substrate for a calculation of a deposition time during which the thin film is deposited, and a controller for calculating a deposition time by using the EPD information, and for controlling the sputter device based on the calculated deposition time.

    摘要翻译： 溅射方法包括接收在干蚀刻工艺中检测到的第一衬底的蚀刻时间信息，根据第一衬底的蚀刻时间信息计算第二衬底的沉积时间，以及基于计算的沉积时间执行第二衬底的溅射。 可以通过使用在端点检测（EPD）装置中检测到的蚀刻终点信息，均匀地保持沉积在溅射装置中的基板上的薄膜的厚度。 溅射系统包括用于执行用于通过溅射法在衬底上沉积薄膜的溅射工艺的溅射装置，用于产生EPD信息的EPD装置，包括用于计算沉积时间的衬底的蚀刻时间信息， 以及用于通过使用EPD信息计算沉积时间的控制器，以及基于计算出的沉积时间来控制溅射装置。

    Method for controlling critical dimension in semiconductor production process, and semiconductor manufacturing line supporting the same
    5.
    发明授权
    Method for controlling critical dimension in semiconductor production process, and semiconductor manufacturing line supporting the same 失效
    用于控制半导体生产过程中的关键尺寸的方法，以及支持其的半导体制造线

    公开(公告)号：US08392010B2

    公开(公告)日：2013-03-05

    申请号：US12912935

    申请日：2010-10-27

    申请人： Eugene Kang ,  Won-Hyouk Jang ,  Joo-Hwa Lee

    发明人： Eugene Kang ,  Won-Hyouk Jang ,  Joo-Hwa Lee

    IPC分类号： G06F19/00 ,  G05B13/02

    CPC分类号： G05B19/41875 ,  G05B2219/32177 ,  G05B2219/32191 ,  G05B2219/32201 ,  G05B2219/45031 ,  Y02P90/22

    摘要： A critical dimension controlling method in a semiconductor production process includes determining whether a model is to undergo a discontinuous production process when a run is inserted in a semiconductor manufacturing line, applying an offset for said model or a common offset for a model group including said model according to the determination, executing a production process in dependence upon a process variation along with the offset for the model or the common offset for the model group, and measuring an actual critical dimension in the production process. The offset for the model is calculated based on a previously measured actual critical dimension, and the calculated offset for the model is applied to the calculation of the common offset for the model group.

    摘要翻译： 半导体制造过程中的关键尺寸控制方法包括：当在半导体制造线中插入运行时，确定模型是否经历不连续生产过程，对所述模型应用偏移量或对包括所述模型的模型组应用偏移量 根据确定，根据工艺变化以及模型组的偏移量或模型组的共同偏移量执行生产过程，并测量生产过程中的实际临界尺寸。 基于先前测量的实际临界尺寸计算模型的偏移量，并将模型的计算偏移量应用于模型组的公差值的计算。

    METHOD FOR CONTROLLING CRITICAL DIMENSION IN SEMICONDUCTOR PRODUCTION PROCESS, AND SEMICONDUCTOR MANUFACTURING LINE SUPPORTING THE SAME
    6.
    发明申请
    METHOD FOR CONTROLLING CRITICAL DIMENSION IN SEMICONDUCTOR PRODUCTION PROCESS, AND SEMICONDUCTOR MANUFACTURING LINE SUPPORTING THE SAME 失效
    用于控制半导体生产过程中的关键尺寸的方法，以及支持其的半导体制造线

    公开(公告)号：US20110224819A1

    公开(公告)日：2011-09-15

    申请号：US12912935

    申请日：2010-10-27

    申请人： Eugene Kang ,  Won-Hyouk Jang ,  Joo-Hwa Lee

    发明人： Eugene Kang ,  Won-Hyouk Jang ,  Joo-Hwa Lee

    IPC分类号： G05B13/04

    CPC分类号： G05B19/41875 ,  G05B2219/32177 ,  G05B2219/32191 ,  G05B2219/32201 ,  G05B2219/45031 ,  Y02P90/22

    摘要： A critical dimension controlling method in a semiconductor production process includes determining whether a model is to undergo a discontinuous production process when a run is inserted in a semiconductor manufacturing line, applying an offset for said model or a common offset for a model group including said model according to the determination, executing a production process in dependence upon a process variation along with the offset for the model or the common offset for the model group, and measuring an actual critical dimension in the production process. The offset for the model is calculated based on a previously measured actual critical dimension, and the calculated offset for the model is applied to the calculation of the common offset for the model group.

    摘要翻译： 半导体制造过程中的关键尺寸控制方法包括：当在半导体制造线中插入运行时，确定模型是否经历不连续生产过程，对所述模型应用偏移量或对包括所述模型的模型组应用偏移量 根据确定，根据工艺变化以及模型组的偏移量或模型组的共同偏移量执行生产过程，并测量生产过程中的实际临界尺寸。 基于先前测量的实际临界尺寸计算模型的偏移量，并将模型的计算偏移量应用于模型组的公差值的计算。

    Virtual measuring device and method
    7.
    发明授权
    Virtual measuring device and method 有权
    虚拟测量装置及方法

    公开(公告)号：US08266080B2

    公开(公告)日：2012-09-11

    申请号：US12354356

    申请日：2009-01-15

    申请人： Won-Hyouk Jang ,  Joo-Hwa Lee ,  Dong-Hyun Kim ,  Hyo-Jin Han ,  Kil-Ho Ok ,  Sung-Hoon Kim

    发明人： Won-Hyouk Jang ,  Joo-Hwa Lee ,  Dong-Hyun Kim ,  Hyo-Jin Han ,  Kil-Ho Ok ,  Sung-Hoon Kim

    IPC分类号： G06F15/18

    CPC分类号： G01B11/0641 ,  G01B11/0683 ,  H01L22/12 ,  H01L22/20

    摘要： A virtual measuring device and a method for measuring the deposition thickness of amorphous silicon being deposited on a substrate is disclosed, where the method of measuring the deposition thickness of amorphous silicon includes predicting and adapting operations. In the predicting operation, during a process of depositing the amorphous silicon to a substrate, the deposition thickness is predicted by multiplying a predicted deposition speed to a deposition time by using a prediction model expressing a relationship between a deposition speed and a plurality of process factors that are correlated with the deposition speed obtained from the deposition thickness and the deposition time, and the predicted deposition thickness is compared with the measured deposition thickness, so that the relationship between the plurality of process factors and the deposition speed in the prediction model is compensated according to the comparison difference.

    摘要翻译： 公开了一种用于测量沉积在衬底上的非晶硅的沉积厚度的虚拟测量装置和方法，其中测量非晶硅的沉积厚度的方法包括预测和适应操作。 在预测操作中，在将非晶硅沉积到衬底的过程中，通过使用表示沉积速度和多个工艺因素之间的关系的预测模型将预测的沉积速度乘以沉积时间来预测沉积厚度 与从沉积厚度和沉积时间获得的沉积速度相关联，并将预测的沉积厚度与测量的沉积厚度进行比较，使得多个工艺因素之间的关系和预测模型中的沉积速度被补偿 根据比较差异。

    EVAPORATOR AND METHOD FOR DEPOSITING ORGANIC MATERIAL
    10.
    发明申请
    EVAPORATOR AND METHOD FOR DEPOSITING ORGANIC MATERIAL 审中-公开
    蒸发器和沉积有机材料的方法

    公开(公告)号：US20120141674A1

    公开(公告)日：2012-06-07

    申请号：US13197876

    申请日：2011-08-04

    申请人： Il-Soo PARK ,  Jun-Sik Oh ,  Won-Hyouk Jang

    发明人： Il-Soo PARK ,  Jun-Sik Oh ,  Won-Hyouk Jang

    IPC分类号： C23C16/448 ,  C23C16/455

    CPC分类号： C23C14/12 ,  C23C14/243

    摘要： An evaporator for depositing material on a substrate includes a crucible configured to receive a deposition material, and a plurality of nozzles in fluid communication with the crucible and facing the substrate, the nozzles projecting away from the crucible and being arranged in a first direction along the crucible, at least two of the nozzles being inclined with respect to a normal to the substrate.

    摘要翻译： 用于在衬底上沉积材料的蒸发器包括构造成接收沉积材料的坩埚和与坩埚流体连通并面对衬底的多个喷嘴，喷嘴远离坩埚突出并且沿着第一方向沿着 坩埚中，至少两个喷嘴相对于基板的法线倾斜。