公开(公告)号：US20180145214A1

公开(公告)日：2018-05-24

申请号：US15859512

申请日：2017-12-30

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Shengchang CHEN ,  Wen-Yu LIN ,  Jie ZHANG ,  Heqing DENG ,  Chen-Ke HSU

IPC: H01L33/12 ,  H01L33/00 ,  H01L33/32 ,  H01L33/22

CPC classification number: H01L33/12 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02631 ,  H01L33/007 ,  H01L33/22 ,  H01L33/32

Abstract: A fabrication method of a nitride underlayer structure includes, during AlN layer sputtering with PVD, a small amount of non-Al material is doped to form nitride with decomposition temperature lower than that of AlN. A high-temperature annealing is then performed. After annealing, the AlN layer has a rough surface with microscopic ups and downs instead of a flat surface. By continuing AlGaN growth via MOCVD over this surface, the stress can be released via 3D-2D mode conversion, thus improving AlN cracks.

公开(公告)号：US20180122635A1

公开(公告)日：2018-05-03

申请号：US15859493

申请日：2017-12-30

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Wen-yu LIN ,  Shengchang CHEN ,  Zhibai ZHONG ,  Chen-ke HSU

IPC: H01L21/02 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  C23C14/06 ,  C23C16/34 ,  C23C14/58 ,  C23C16/02 ,  C23C28/04

CPC classification number: H01L33/007 ,  C23C14/0641 ,  C23C14/34 ,  C23C14/5813 ,  C23C14/5873 ,  C23C16/0263 ,  C23C16/0272 ,  C23C16/303 ,  C23C28/04 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/12 ,  H01L33/32

Abstract: A nitride underlayer structure includes a sputtered AlN buffer layer with open band-shaped holes, thus providing a stress release path before the nitride film is grown over the buffer layer. A light-emitting diode with such nitride underlayer structure has improved lattice quality of the nitride underlayer structure and the problem of surface cracks is resolved. A fabrication method of the nitride underlayer includes providing a substrate and forming a band-shaped material layer over the substrate; sputtering an AlN material layer over the band-shaped material layer and the substrate to form a flat film; scanning back and forth from the substrate end with a laser beam to decompose the band-shaped material layer to form a sputtered AlN buffer layer with flat surface and band-shaped holes inside; and forming an AlxIn1-x-yGayN layer (0≤x≤1, 0≤y≤1) over the sputtered AlN buffer layer.