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公开(公告)号：US20210407978A1
公开(公告)日：2021-12-30
申请号：US17447325
申请日：2021-09-10
Inventor： Zhibai ZHONG , Chia-En LEE , Jinjian ZHENG , Jiansen ZHENG , Chen-Ke HSU , Junyong KANG
Abstract: A mass transfer method includes providing a transfer unit and a semiconductor carrying unit connected therewith, removing an element supporting structure of the semiconductor carrying unit from micro semiconductor elements of the semiconductor carrying unit, partially removing the photosensitive layer to form connecting structures, connecting a package substrate with electrodes of the micro semiconductor elements, breaking the connecting structures to separate the micro semiconductor elements from the transfer substrate. A mass transfer device is also disclosed.
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公开(公告)号：US20210013388A1
公开(公告)日：2021-01-14
申请号：US17027405
申请日：2020-09-21
Inventor： Zhibai ZHONG , Chia-En LEE , Jinjian ZHENG , Zheng WU , Chen-Ke HSU , Junyong KANG
IPC: H01L33/62 , H01L33/00 , H01L33/36 , H01L25/075
Abstract: A micro light-emitting device includes a support substrate, at least one micro light-emitting element, and a support structure. The support structure includes a bonding layer, an electrically conductive layer, and a protective insulation layer. The micro light-emitting element is supported by the support structure on the support substrate. The micro light-emitting element includes a light-emitting structure and first and second electrodes. First and second contact regions of the first electrode are respectively connected to a supporting post portion of the electrically conductive layer and a surrounding post portion of the protective insulation layer. A production method of the device and use of the element are also disclosed.
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公开(公告)号：US20200258861A1
公开(公告)日：2020-08-13
申请号：US16865186
申请日：2020-05-01
Inventor： Zhibai ZHONG , Chia-en LEE , Jinjian ZHENG , Lixun YANG , Chen-ke HSU , Junyong KANG
Abstract: A process for packaging at least one component includes the steps of: a) providing a substrate and a packaging material layer, b) forming the packaging material layer into an adhesively semi-cured packaging material layer, c) adhering the adhesively semi-cured packaging material layer to an array, d) providing a packaging unit including at least one eutectic metal bump pair, e) permitting the eutectic metal bump pair to be in contact with at least one electrode pair on the array, f) subjecting the electrode pair to eutectic bonding to the eutectic metal bump pair, g) encapsulating the component by pressing, h) completely curing the adhesively semi-cured packaging material layer, and i) removing the substrate.
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Patent Agency Ranking
公开(公告)号：US20180145220A1
公开(公告)日：2018-05-24
申请号：US15859543
申请日：2017-12-31
Inventor： Zhibai ZHONG , Lixun YANG , Jinjian ZHENG , Chia-en LEE , Chen-ke HSU , Junyong KANG
CPC classification number: H01L33/36 , H01L21/022 , H01L21/02252 , H01L24/04 , H01L24/13 , H01L24/16 , H01L24/81 , H01L33/08 , H01L33/40 , H01L33/62 , H01L2224/0554 , H01L2224/10145 , H01L2224/13011 , H01L2224/13012 , H01L2224/13016 , H01L2224/13078 , H01L2224/13082 , H01L2224/13124 , H01L2224/13139 , H01L2224/13147 , H01L2224/13562 , H01L2224/13578 , H01L2224/13644 , H01L2224/13669 , H01L2224/13671 , H01L2224/13686 , H01L2224/1607 , H01L2224/16238 , H01L2224/81193 , H01L2933/0016 , H01L2933/0066 , H01L2924/053 , H01L2924/00014 , H01L2924/00012
Abstract: A bonding electrode structure of a flip-chip LED chip includes: a substrate; a light-emitting epitaxial layer over the substrate; a bonding electrode over the light-emitting epitaxial layer, wherein the bonding electrode structure includes a metal laminated layer having a bottom layer and an upper surface layer from bottom up. The bottom layer structure is oxidable metal and the side wall forms an oxide layer. The upper surface layer is non-oxidable metal. The bonding electrode structure has a main contact portion, and a grid-shape portion surrounding the main contact portion in a horizontal direction. The problems during packaging and soldering of the flip-chip LED chip structure, such as short circuit or electric leakage, can thus be solved.
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公开(公告)号：US20150008468A1
公开(公告)日：2015-01-08
申请号：US14481928
申请日：2014-09-10
Inventor： Wenxin CHEN , Zhibai ZHONG , Charles Siu Huen LEUNG
CPC classification number: H01L33/24 , H01L33/0075 , H01L33/0079 , H01L33/10 , H01L33/20 , H01L33/405 , H01L33/58 , H01L33/62 , H01L33/642 , H01L33/647 , H01L2924/0002 , H01L2933/0058 , H01L2924/00
Abstract: A light emitting device includes: a substrate; an n layer; an active light emitting region having a light emitting side; a p layer; a reflector opposite the light emitting side; and a plurality of microchannels configured to optically couple the active light emitting region with the reflector.
Abstract translation: 发光装置包括：基板; 一层; 具有发光侧的主动发光区域; 一个p层; 与发光侧相反的反射器; 以及多个微通道，其被配置为将所述有源发光区域与所述反射器光学耦合。
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公开(公告)号：US20180122635A1
公开(公告)日：2018-05-03
申请号：US15859493
申请日：2017-12-30
Inventor： Wen-yu LIN , Shengchang CHEN , Zhibai ZHONG , Chen-ke HSU
IPC: H01L21/02 , H01L33/12 , H01L33/32 , H01L33/00 , C23C14/06 , C23C16/34 , C23C14/58 , C23C16/02 , C23C28/04
CPC classification number: H01L33/007 , C23C14/0641 , C23C14/34 , C23C14/5813 , C23C14/5873 , C23C16/0263 , C23C16/0272 , C23C16/303 , C23C28/04 , H01L21/0242 , H01L21/02458 , H01L21/02494 , H01L21/02502 , H01L21/0254 , H01L21/02658 , H01L33/12 , H01L33/32
Abstract: A nitride underlayer structure includes a sputtered AlN buffer layer with open band-shaped holes, thus providing a stress release path before the nitride film is grown over the buffer layer. A light-emitting diode with such nitride underlayer structure has improved lattice quality of the nitride underlayer structure and the problem of surface cracks is resolved. A fabrication method of the nitride underlayer includes providing a substrate and forming a band-shaped material layer over the substrate; sputtering an AlN material layer over the band-shaped material layer and the substrate to form a flat film; scanning back and forth from the substrate end with a laser beam to decompose the band-shaped material layer to form a sputtered AlN buffer layer with flat surface and band-shaped holes inside; and forming an AlxIn1-x-yGayN layer (0≤x≤1, 0≤y≤1) over the sputtered AlN buffer layer.
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公开(公告)号：US20170141280A1
公开(公告)日：2017-05-18
申请号：US15418774
申请日：2017-01-29
Inventor： Zhibai ZHONG , Yen-chih CHIANG , Qiuyan FANG , Chia-en LEE , Chen-ke HSU
CPC classification number: H01L33/647 , H01L25/0753 , H01L33/44 , H01L33/50 , H01L33/502 , H01L33/60 , H01L33/62 , H01L2933/0025 , H01L2933/0041 , H01L2933/0058 , H01L2933/0066 , H01L2933/0075
Abstract: A flip-chip high-voltage light-emitting device includes: a light emitting module composed of a plurality of flip-chip light emitting units in series with a first surface and a second surface opposite to each other, wherein, gap is formed between flip-chip light emitting units, and each comprises an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer; a light conversion layer on the first surface of the light emitting module that covers side surfaces of light emitting units; an insulation layer that covers the second surface of the entire light emitting module and is only exposed to the n-type semiconductor layer in the first light emitting unit and the p-type semiconductor layer in the last light emitting unit of the light emitting module; a first support electrode and a second support electrode on the insulation layer.
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公开(公告)号：US20170133557A1
公开(公告)日：2017-05-11
申请号：US15417227
申请日：2017-01-27
Inventor： Zhibai ZHONG , Wen-yu LIN , Yen-chih CHIANG , Jianming LIU , Chia-en LEE , Su-hui LIN , Chen-ke HSU
CPC classification number: H01L33/385 , H01L33/0075 , H01L33/38 , H01L33/486 , H01L33/62 , H01L33/641 , H01L2933/0016 , H01L2933/0033 , H01L2933/0066 , H01L2933/0075
Abstract: A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate with two opposite surfaces and two side walls connecting those two surfaces, in which, the first surface is connected to the light-emitting epitaxial laminated layer through the first and the second electrodes; a first external electrode and a second external electrode on the second surface of the non-conductive substrate, which extend to the side walls of the non-conductive substrate till and at least cover parts of the side walls of the first and the second electrodes to form electrical connection.
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