公开(公告)号：US20180122635A1

公开(公告)日：2018-05-03

申请号：US15859493

申请日：2017-12-30

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Wen-yu LIN ,  Shengchang CHEN ,  Zhibai ZHONG ,  Chen-ke HSU

IPC: H01L21/02 ,  H01L33/12 ,  H01L33/32 ,  H01L33/00 ,  C23C14/06 ,  C23C16/34 ,  C23C14/58 ,  C23C16/02 ,  C23C28/04

CPC classification number: H01L33/007 ,  C23C14/0641 ,  C23C14/34 ,  C23C14/5813 ,  C23C14/5873 ,  C23C16/0263 ,  C23C16/0272 ,  C23C16/303 ,  C23C28/04 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02494 ,  H01L21/02502 ,  H01L21/0254 ,  H01L21/02658 ,  H01L33/12 ,  H01L33/32

Abstract: A nitride underlayer structure includes a sputtered AlN buffer layer with open band-shaped holes, thus providing a stress release path before the nitride film is grown over the buffer layer. A light-emitting diode with such nitride underlayer structure has improved lattice quality of the nitride underlayer structure and the problem of surface cracks is resolved. A fabrication method of the nitride underlayer includes providing a substrate and forming a band-shaped material layer over the substrate; sputtering an AlN material layer over the band-shaped material layer and the substrate to form a flat film; scanning back and forth from the substrate end with a laser beam to decompose the band-shaped material layer to form a sputtered AlN buffer layer with flat surface and band-shaped holes inside; and forming an AlxIn1-x-yGayN layer (0≤x≤1, 0≤y≤1) over the sputtered AlN buffer layer.

公开(公告)号：US20170133557A1

公开(公告)日：2017-05-11

申请号：US15417227

申请日：2017-01-27

Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Zhibai ZHONG ,  Wen-yu LIN ,  Yen-chih CHIANG ,  Jianming LIU ,  Chia-en LEE ,  Su-hui LIN ,  Chen-ke HSU

IPC: H01L33/38 ,  H01L33/00 ,  H01L33/64 ,  H01L33/62

CPC classification number: H01L33/385 ,  H01L33/0075 ,  H01L33/38 ,  H01L33/486 ,  H01L33/62 ,  H01L33/641 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01L2933/0075

Abstract: A flip-chip light emitting device includes: a light-emitting epitaxial laminated layer with two opposite surfaces, in which, the first surface is a light-emitting surface; a first electrode and a second electrode that are separated from each other on the second surface of the light-emitting epitaxial laminated layer; a non-conductive substrate with two opposite surfaces and two side walls connecting those two surfaces, in which, the first surface is connected to the light-emitting epitaxial laminated layer through the first and the second electrodes; a first external electrode and a second external electrode on the second surface of the non-conductive substrate, which extend to the side walls of the non-conductive substrate till and at least cover parts of the side walls of the first and the second electrodes to form electrical connection.