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    THREE PORT MTJ STRUCTURE AND INTEGRATION
    2.
    发明申请
    THREE PORT MTJ STRUCTURE AND INTEGRATION 有权
    三港MTJ结构与整合

    公开(公告)号：US20130114336A1

    公开(公告)日：2013-05-09

    申请号：US13356720

    申请日：2012-01-24

    申请人： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang ,  Jung Pill Kim ,  Wah Nam Hsu ,  Taehyun Kim ,  Kangho Lee

    发明人： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang ,  Jung Pill Kim ,  Wah Nam Hsu ,  Taehyun Kim ,  Kangho Lee

    IPC分类号： G11C11/14 ,  H01L21/8246 ,  H01L29/82

    CPC分类号： G11C11/161 ,  G11C8/16 ,  G11C11/16 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08

    摘要： A two-transistor one-MTJ (2T1MTJ) three port structure includes two separate pin layer structures coupled to one free layer structure. The pin layer structures may include an anti-ferromagnetic layer (AFM) layer coupled to a pin layer. The free layer structure includes free layer coupled to a barrier layer and a cap layer. The free layer structure may include a thin barrier layer coupled to each of the pin layer stacks. The three port MTJ structure provides separate write and read paths which improve read sensing margin without increasing write voltage or current. The three port MTJ structure may be fabricated with a simple two step MTJ etch process.

    摘要翻译： 双晶体管单MTJ（2T1MTJ）三端口结构包括耦合到一个自由层结构的两个独立的引脚层结构。 引脚层结构可以包括耦合到引脚层的反铁磁层（AFM）层。 自由层结构包括耦合到阻挡层和盖层的自由层。 自由层结构可以包括耦合到每个引脚层堆叠的薄势垒层。 三端口MTJ结构提供单独的写入和读取路径，从而提高读取感测余量，而不增加写入电压或电流。 三端口MTJ结构可以用简单的两步MTJ蚀刻工艺制造。

    Three port MTJ structure and integration
    3.
    发明授权
    Three port MTJ structure and integration 有权
    三端口MTJ结构和集成

    公开(公告)号：US09064589B2

    公开(公告)日：2015-06-23

    申请号：US13356720

    申请日：2012-01-24

    申请人： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang ,  Jung Pill Kim ,  Wah Nam Hsu ,  Taehyun Kim ,  Kangho Lee

    发明人： Xia Li ,  Xiaochun Zhu ,  Seung H. Kang ,  Jung Pill Kim ,  Wah Nam Hsu ,  Taehyun Kim ,  Kangho Lee

    IPC分类号： G11C11/14 ,  G11C11/16 ,  G11C8/16 ,  H01L43/08 ,  H01L27/22

    CPC分类号： G11C11/161 ,  G11C8/16 ,  G11C11/16 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/08

    摘要： A two-transistor one-MTJ (2T1MTJ) three port structure includes two separate pin layer structures coupled to one free layer structure. The pin layer structures may include an anti-ferromagnetic layer (AFM) layer coupled to a pin layer. The free layer structure includes free layer coupled to a barrier layer and a cap layer. The free layer structure may include a thin barrier layer coupled to each of the pin layer stacks. The three port MTJ structure provides separate write and read paths which improve read sensing margin without increasing write voltage or current. The three port MTJ structure may be fabricated with a simple two step MTJ etch process.

    摘要翻译： 双晶体管单MTJ（2T1MTJ）三端口结构包括耦合到一个自由层结构的两个独立的引脚层结构。 引脚层结构可以包括耦合到引脚层的反铁磁层（AFM）层。 自由层结构包括耦合到阻挡层和盖层的自由层。 自由层结构可以包括耦合到每个引脚层堆叠的薄势垒层。 三端口MTJ结构提供单独的写入和读取路径，从而提高读取感测余量，而不增加写入电压或电流。 三端口MTJ结构可以用简单的两步MTJ蚀刻工艺制造。

    Magnetic Tunnel Junction (MTJ) on Planarized Electrode
    7.
    发明申请
    Magnetic Tunnel Junction (MTJ) on Planarized Electrode 有权
    平面电极上的磁隧道结（MTJ）

    公开(公告)号：US20110175181A1

    公开(公告)日：2011-07-21

    申请号：US12777529

    申请日：2010-05-11

    申请人： Seung H. Kang ,  Xia Li ,  Wei-Chuan Chen ,  Kangho Lee ,  Xiaochun Zhu ,  Wah Nam Hsu

    发明人： Seung H. Kang ,  Xia Li ,  Wei-Chuan Chen ,  Kangho Lee ,  Xiaochun Zhu ,  Wah Nam Hsu

    IPC分类号： H01L29/82 ,  H01L21/28

    CPC分类号： H01L43/12 ,  H01L43/08

    摘要： A magnetic tunnel junction (MTJ) with direct contact is manufactured having lower resistances, improved yield, and simpler fabrication. The lower resistances improve both read and write processes in the MTJ. The MTJ layers are deposited on a bottom electrode aligned with the bottom metal. An etch stop layer may be deposited adjacent to the bottom metal to prevent overetch of an insulator surrounding the bottom metal. The bottom electrode is planarized before deposition of the MTJ layers to provide a substantially flat surface. Additionally, an underlayer may be deposited on the bottom electrode before the MTJ layers to promote desired characteristics of the MTJ.

    摘要翻译： 具有直接接触的磁性隧道结（MTJ）被制造成具有较低的电阻，提高的产量和更简单的制造。 较低的电阻提高了MTJ中的读取和写入过程。 MTJ层沉积在与底部金属对准的底部电极上。 蚀刻停止层可以沉积在底部金属附近，以防止围绕底部金属的绝缘体的过蚀刻。 在沉积MTJ层之前将底部电极平坦化以提供基本平坦的表面。 另外，可以在MTJ层之前的底部电极上沉​​积底层以促进MTJ的期望特性。

    Magnetic tunnel junction (MTJ) on planarized electrode
    8.
    发明授权
    Magnetic tunnel junction (MTJ) on planarized electrode 有权
    平面化电极上的磁隧道结（MTJ）

    公开(公告)号：US08681536B2

    公开(公告)日：2014-03-25

    申请号：US12777529

    申请日：2010-05-11

    申请人： Seung H. Kang ,  Xia Li ,  Wei-Chuan Chen ,  Kangho Lee ,  Xiaochun Zhu ,  Wah Nam Hsu

    发明人： Seung H. Kang ,  Xia Li ,  Wei-Chuan Chen ,  Kangho Lee ,  Xiaochun Zhu ,  Wah Nam Hsu

    IPC分类号： G11C11/22

    CPC分类号： H01L43/12 ,  H01L43/08

    摘要： A magnetic tunnel junction (MTJ) with direct contact is manufactured having lower resistances, improved yield, and simpler fabrication. The lower resistances improve both read and write processes in the MTJ. The MTJ layers are deposited on a bottom electrode aligned with the bottom metal. An etch stop layer may be deposited adjacent to the bottom metal to prevent overetch of an insulator surrounding the bottom metal. The bottom electrode is planarized before deposition of the MTJ layers to provide a substantially flat surface. Additionally, an underlayer may be deposited on the bottom electrode before the MTJ layers to promote desired characteristics of the MTJ.

    摘要翻译： 具有直接接触的磁性隧道结（MTJ）被制造成具有较低的电阻，提高的产量和更简单的制造。 较低的电阻提高了MTJ中的读取和写入过程。 MTJ层沉积在与底部金属对准的底部电极上。 蚀刻停止层可以沉积在底部金属附近，以防止围绕底部金属的绝缘体的过蚀刻。 在沉积MTJ层之前将底部电极平坦化以提供基本平坦的表面。 另外，可以在MTJ层之前的底部电极上沉​​积底层以促进MTJ的期望特性。

    Write energy conservation in memory
    9.
    发明授权
    Write energy conservation in memory 有权
    在记忆中写节能

    公开(公告)号：US08488363B2

    公开(公告)日：2013-07-16

    申请号：US12777468

    申请日：2010-05-11

    申请人： Hari M. Rao ,  Jung Pill Kim ,  Taehyun Kim ,  Xiaochun Zhu ,  Kangho Lee ,  Wuyang Hao

    发明人： Hari M. Rao ,  Jung Pill Kim ,  Taehyun Kim ,  Xiaochun Zhu ,  Kangho Lee ,  Wuyang Hao

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675 ,  G11C11/1693

    摘要： A method writes data to a resistive memory, such as spin torque transfer magnetic random access memory (STT-MRAM). The method writes received bits of data to a memory cell array, in response to a first write signal. The method also reads stored data from the memory cell array, after the first write signal is generated, and then compares the stored data with the received bits of data to determine whether each of the received bits of data was written to the memory. In response to a second write signal, received bits of data determined not to have been written during the first write signal, are written.

    摘要翻译： 一种方法将数据写入电阻性存储器，如自旋扭矩传递磁随机存取存储器（STT-MRAM）。 该方法响应于第一写入信号将接收到的数据位写入存储单元阵列。 该方法还在生成第一写信号之后从存储单元阵列中读取存储的数据，然后将所存储的数据与接收的数据位进行比较，以确定每个接收的数据位是否被写入存储器。 响应于第二写入信号，写入在第一写入信号期间被确定为不被写入的数据的接收位。

    Write Energy Conservation In Memory
    10.
    发明申请
    Write Energy Conservation In Memory 有权
    写节能记忆

    公开(公告)号：US20110280065A1

    公开(公告)日：2011-11-17

    申请号：US12777468

    申请日：2010-05-11

    申请人： Hari M. Rao ,  Jung Pill Kim ,  Taehyun Kim ,  Xiaochun Zhu ,  Kangho Lee ,  Wuyang Hao

    发明人： Hari M. Rao ,  Jung Pill Kim ,  Taehyun Kim ,  Xiaochun Zhu ,  Kangho Lee ,  Wuyang Hao

    IPC分类号： G11C11/14 ,  G11C11/416

    CPC分类号： G11C11/1675 ,  G11C11/1693

    摘要： A method writes data to a resistive memory, such as spin torque transfer magnetic random access memory (STT-MRAM). The method writes received bits of data to a memory cell array, in response to a first write signal. The method also reads stored data from the memory cell array, after the first write signal is generated, and then compares the stored data with the received bits of data to determine whether each of the received bits of data was written to the memory. In response to a second write signal, received bits of data determined not to have been written during the first write signal, are written.

    摘要翻译： 一种方法将数据写入电阻性存储器，如自旋扭矩传递磁随机存取存储器（STT-MRAM）。 该方法响应于第一写入信号将接收到的数据位写入存储单元阵列。 该方法还在生成第一写信号之后从存储单元阵列中读取存储的数据，然后将所存储的数据与接收的数据位进行比较，以确定每个接收的数据位是否被写入存储器。 响应于第二写入信号，写入在第一写入信号期间被确定为不被写入的数据的接收位。