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公开(公告)号:US08790946B2
公开(公告)日:2014-07-29
申请号:US13365043
申请日:2012-02-02
申请人: Xin-Hua Huang , Ping-Yin Liu , Li-Cheng Chu , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
发明人: Xin-Hua Huang , Ping-Yin Liu , Li-Cheng Chu , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
IPC分类号: H01L21/52
CPC分类号: B23K20/002 , B23K20/023
摘要: A method includes bonding a first bond layer to a second bond layer through eutectic bonding. The step of bonding includes heating the first bond layer and the second bond layer to a temperature higher than a eutectic temperature of the first bond layer and the second bond layer, and performing a pumping cycle. The pumping cycle includes applying a first force to press the first bond layer and the second bond layer against each other. After the step of applying the first force, a second force lower than the first force is applied to press the first bond layer and the second bond layer against each other. After the step of applying the second force, a third force higher than the second force is applied to press the first bond layer and the second bond layer against each other.
摘要翻译: 一种方法包括通过共晶接合将第一接合层结合到第二接合层。 接合步骤包括将第一接合层和第二接合层加热至高于第一接合层和第二接合层的共晶温度的温度,并进行泵送循环。 泵送循环包括施加第一力以将第一接合层和第二接合层相互挤压。 在施加第一力的步骤之后,施加比第一力小的第二力以将第一接合层和第二接合层相互挤压。 在施加第二力的步骤之后,施加比第二力高的第三力以将第一接合层和第二接合层相互挤压。
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公开(公告)号:US20130203199A1
公开(公告)日:2013-08-08
申请号:US13365043
申请日:2012-02-02
申请人: Xin-Hua Huang , Ping-Yin Liu , Li-Cheng Chu , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
发明人: Xin-Hua Huang , Ping-Yin Liu , Li-Cheng Chu , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
CPC分类号: B23K20/002 , B23K20/023
摘要: A method includes bonding a first bond layer to a second bond layer through eutectic bonding. The step of bonding includes heating the first bond layer and the second bond layer to a temperature higher than a eutectic temperature of the first bond layer and the second bond layer, and performing a pumping cycle. The pumping cycle includes applying a first force to press the first bond layer and the second bond layer against each other. After the step of applying the first force, a second force lower than the first force is applied to press the first bond layer and the second bond layer against each other. After the step of applying the second force, a third force higher than the second force is applied to press the first bond layer and the second bond layer against each other.
摘要翻译: 一种方法包括通过共晶接合将第一接合层结合到第二接合层。 接合步骤包括将第一接合层和第二接合层加热至高于第一接合层和第二接合层的共晶温度的温度,并进行泵送循环。 泵送循环包括施加第一力以将第一接合层和第二接合层相互挤压。 在施加第一力的步骤之后,施加比第一力小的第二力以将第一接合层和第二接合层相互挤压。 在施加第二力的步骤之后,施加比第二力高的第三力以将第一接合层和第二接合层相互挤压。
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公开(公告)号:US09054121B2
公开(公告)日:2015-06-09
申请号:US13280075
申请日:2011-10-24
申请人: Ping-Yin Liu , Xin-Hua Huang , Hsin-Ting Huang , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
发明人: Ping-Yin Liu , Xin-Hua Huang , Hsin-Ting Huang , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
CPC分类号: B81B7/0058 , B81B3/0005 , B81B3/0021 , B81C1/00269 , B81C1/00793 , B81C2201/053 , B81C2203/0109 , H01G5/16 , H01L28/60
摘要: A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer. The steps of forming the bond layer and the protection layer include in-situ deposition of the bond layer and the protection layer.
摘要翻译: 一种方法包括形成MEMS器件,形成与MEMS器件相邻的接合层,并在接合层上形成保护层。 形成接合层和保护层的步骤包括接合层和保护层的原位沉积。
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公开(公告)号:US20130099355A1
公开(公告)日:2013-04-25
申请号:US13280075
申请日:2011-10-24
申请人: Ping-Yin Liu , Xin-Hua Huang , Hsin-Ting Huang , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
发明人: Ping-Yin Liu , Xin-Hua Huang , Hsin-Ting Huang , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
CPC分类号: B81B7/0058 , B81B3/0005 , B81B3/0021 , B81C1/00269 , B81C1/00793 , B81C2201/053 , B81C2203/0109 , H01G5/16 , H01L28/60
摘要: A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer. The steps of forming the bond layer and the protection layer include in-situ deposition of the bond layer and the protection layer
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公开(公告)号:US08905293B2
公开(公告)日:2014-12-09
申请号:US12964347
申请日:2010-12-09
申请人: Ping-Yin Liu , Li-Cheng Chu , Hung-Hua Lin , Shang-Ying Tsai , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
发明人: Ping-Yin Liu , Li-Cheng Chu , Hung-Hua Lin , Shang-Ying Tsai , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
CPC分类号: B81C1/00269 , B32B7/12 , B32B15/043 , B32B15/20 , B32B2255/24 , B32B2307/746 , B32B2457/00 , B81B3/0005 , B81C2201/112 , Y10T428/12674 , Y10T428/12708 , Y10T428/12736 , Y10T428/12986
摘要: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.
摘要翻译: 公开了没有抗静电层和粘合方法的键。 一种示例性方法包括形成第一粘合层; 在所述第一接合层上形成中间层; 在中间层上形成抗静电层; 以及从所述第一接合层和中间层形成液体,使得所述抗静电层浮在所述第一接合层上。 第二接合层可以结合到第一接合层,同时抗静电层漂浮在第一接合层上,使得第一和第二接合层之间的接合没有抗静电层。
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公开(公告)号:US20120148870A1
公开(公告)日:2012-06-14
申请号:US12964347
申请日:2010-12-09
申请人: Ping-Yin Liu , Li-Cheng Chu , Hung-Hua Lin , Shang-Ying Tsai , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
发明人: Ping-Yin Liu , Li-Cheng Chu , Hung-Hua Lin , Shang-Ying Tsai , Yuan-Chih Hsieh , Jung-Huei Peng , Lan-Lin Chao , Chia-Shiung Tsai , Chun-Wen Cheng
CPC分类号: B81C1/00269 , B32B7/12 , B32B15/043 , B32B15/20 , B32B2255/24 , B32B2307/746 , B32B2457/00 , B81B3/0005 , B81C2201/112 , Y10T428/12674 , Y10T428/12708 , Y10T428/12736 , Y10T428/12986
摘要: A bond free of an anti-stiction layer and bonding method is disclosed. An exemplary method includes forming a first bonding layer; forming an interlayer over the first bonding layer; forming an anti-stiction layer over the interlayer; and forming a liquid from the first bonding layer and interlayer, such that the anti-stiction layer floats over the first bonding layer. A second bonding layer can be bonded to the first bonding layer while the anti-stiction layer floats over the first bonding layer, such that a bond between the first and second bonding layers is free of the anti-stiction layer.
摘要翻译: 公开了没有抗静电层和粘合方法的键。 一种示例性方法包括形成第一粘合层; 在所述第一接合层上形成中间层; 在中间层上形成抗静电层; 以及从所述第一接合层和中间层形成液体,使得所述抗静电层浮在所述第一接合层上。 第二接合层可以结合到第一接合层,同时抗静电层漂浮在第一接合层上,使得第一和第二接合层之间的接合没有抗静电层。
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公开(公告)号:US08945344B2
公开(公告)日:2015-02-03
申请号:US13554751
申请日:2012-07-20
申请人: Xin-Hua Huang , Ping-Yin Liu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai
发明人: Xin-Hua Huang , Ping-Yin Liu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai
IPC分类号: B32B38/10
CPC分类号: H01L21/67092 , Y10T156/11 , Y10T156/1132 , Y10T156/1153 , Y10T156/1189 , Y10T156/1911 , Y10T156/1944 , Y10T156/1972
摘要: Systems and methods of separating bonded wafers are disclosed. In one embodiment, a system for separating bonded wafers includes a support for the bonded wafers and means for applying a sheer force to the bonded wafers. The system also includes means for applying a vacuum to the bonded wafers.
摘要翻译: 公开了分离键合晶片的系统和方法。 在一个实施例中,用于分离接合的晶片的系统包括用于接合的晶片的支撑件和用于向结合的晶片施加纯粹的力的装置。 该系统还包括用于向接合晶片施加真空的装置。
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公开(公告)号:US20140020818A1
公开(公告)日:2014-01-23
申请号:US13554751
申请日:2012-07-20
申请人: Xin-Hua Huang , Ping-Yin Liu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai
发明人: Xin-Hua Huang , Ping-Yin Liu , Hung-Hua Lin , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai
CPC分类号: H01L21/67092 , Y10T156/11 , Y10T156/1132 , Y10T156/1153 , Y10T156/1189 , Y10T156/1911 , Y10T156/1944 , Y10T156/1972
摘要: Systems and methods of separating bonded wafers are disclosed. In one embodiment, a system for separating bonded wafers includes a support for the bonded wafers and means for applying a sheer force to the bonded wafers. The system also includes means for applying a vacuum to the bonded wafers.
摘要翻译: 公开了分离键合晶片的系统和方法。 在一个实施例中,用于分离接合的晶片的系统包括用于接合的晶片的支撑件和用于向结合的晶片施加纯粹的力的装置。 该系统还包括用于向接合晶片施加真空的装置。
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公开(公告)号:US08846129B2
公开(公告)日:2014-09-30
申请号:US13372141
申请日:2012-02-13
申请人: Hung-Hua Lin , Li-Cheng Chu , Ming-Tung Wu , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai
发明人: Hung-Hua Lin , Li-Cheng Chu , Ming-Tung Wu , Yuan-Chih Hsieh , Lan-Lin Chao , Chia-Shiung Tsai
IPC分类号: B05D3/10 , C12Q1/68 , H01L21/311
CPC分类号: G01N21/55 , G01N21/01 , G01N21/253 , G01N27/327 , G01N33/483 , G01N2021/0106 , G01N2201/0636
摘要: A method of forming of biological sensing structures including a portion of a substrate is recessed to form a plurality of mesas in the substrate. Each of the plurality of mesas has a top surface and a sidewall surface. A first light reflecting layer is deposited over the top surface and the sidewall surface of each mesa. A filling material is formed over a first portion of the first light reflecting layer. A stop layer is deposited over the filling material and a second portion of the first light reflecting layer. A sacrificial layer is formed over the stop layer and is planarized exposing the stop layer. A first opening is formed in the stop layer and the first light reflecting layer. A second light reflecting layer is deposited over the first opening. A second opening is formed in the second light reflecting layer.
摘要翻译: 形成包括衬底的一部分的生物感测结构的方法被凹进以在衬底中形成多个台面。 多个台面中的每一个具有顶表面和侧壁表面。 第一光反射层沉积在每个台面的顶表面和侧壁表面上。 在第一光反射层的第一部分上形成填充材料。 沉积在填充材料上的停止层和第一光反射层的第二部分。 牺牲层形成在停止层上并且被平坦化地暴露停止层。 在停止层和第一光反射层中形成第一开口。 第二光反射层沉积在第一开口上。 在第二光反射层中形成第二开口。
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公开(公告)号:US20110233621A1
公开(公告)日:2011-09-29
申请号:US12729911
申请日:2010-03-23
申请人: Martin Liu , Richard Chu , Hung-Hua Lin , H. T. Huang , Jung-Huei Peng , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
发明人: Martin Liu , Richard Chu , Hung-Hua Lin , H. T. Huang , Jung-Huei Peng , Yuan-Chih Hsieh , Lan-Lin Chao , Chun-Wen Cheng , Chia-Shiung Tsai
CPC分类号: H01L25/162 , B81B2207/012 , B81C1/00269 , B81C2203/0118 , B81C2203/035 , H01L21/187 , H01L2924/0002 , H01L2924/00
摘要: The present disclosure provides a method of bonding a plurality of substrates. In an embodiment, a first substrate includes a first bonding layer. The second substrate includes a second bonding layer. The first bonding layer includes silicon; the second bonding layer includes aluminum. The first substrate and the second substrate are bonded forming a bond region having an interface between the first bonding layer and the second bonding layer. A device having a bonding region between substrates is also provided. The bonding region includes an interface between a layer including silicon and a layer including aluminum.
摘要翻译: 本公开提供了一种接合多个基板的方法。 在一个实施例中,第一衬底包括第一接合层。 第二基板包括第二接合层。 第一接合层包括硅; 第二结合层包括铝。 第一基板和第二基板被接合形成在第一接合层和第二接合层之间具有界面的接合区域。 还提供了一种在衬底之间具有接合区域的器件。 接合区域包括在包括硅的层和包括铝的层之间的界面。
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