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    High Coordination Sphere Group 2 Metal B-Diketiminate Precursors
    3.
    发明申请
    High Coordination Sphere Group 2 Metal B-Diketiminate Precursors 有权
    高配位球2组金属B-Diketiminate前体

    公开(公告)号：US20100173075A1

    公开(公告)日：2010-07-08

    申请号：US12535192

    申请日：2009-08-04

    申请人： John Anthony Thomas Norman ,  Xinjian Lei

    发明人： John Anthony Thomas Norman ,  Xinjian Lei

    IPC分类号： C07F3/00 ,  C07C249/02 ,  C23C16/40 ,  C23C16/44 ,  C09D5/00

    CPC分类号： C07C211/14 ,  C07C217/40 ,  C07C225/06 ,  C23C16/18

    摘要： The present invention is directed to high coordination sphere Group 2 metal β-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing.

    摘要翻译： 本发明涉及高配位球2族金属和二铬酸盐组合物，例如双（N-（2,2-甲氧基乙基）-4-（2,2-甲氧基乙基亚氨基）-2-戊烯-2-氨基） 钡; 以及通过化学气相沉积，脉冲化学气相沉积，分子层沉积或原子层沉积沉积这种金属配体组合物的金属，以产生第二族金属含有膜，例如钛酸钡锶膜或钛酸锶薄膜或掺杂钡的镧系元素 作为电子设备制造的高k材料。

    Liquid precursor for depositing group 4 metal containing films
    4.
    发明授权
    Liquid precursor for depositing group 4 metal containing films 有权
    用于沉积第4组含金属膜的液体前体

    公开(公告)号：US08592606B2

    公开(公告)日：2013-11-26

    申请号：US12950352

    申请日：2010-11-19

    申请人： Xinjian Lei ,  John Anthony Thomas Norman ,  Daniel P. Spence

    发明人： Xinjian Lei ,  John Anthony Thomas Norman ,  Daniel P. Spence

    IPC分类号： C07F7/00 ,  C07F7/28 ,  C23C16/00

    CPC分类号： C07F17/00 ,  C07F7/003

    摘要： The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR1)(OR2)(OR3) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein R1-3 can be same or different and selected from group consisting of linear or branched C1-6 alkyls; preferably C1-3 alkyls; R4 is selected from the group consisting of C1-6 alkyls, preferably branched C3-5 alkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in η1 fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.

    摘要翻译： 本发明涉及一种由式（pyr *）M（OR1）（OR2）（OR3）表示的液体组4前体，其中pyr *是烷基取代的吡咯基，其中M是第4族金属包括Ti， Zr和Hf; 其中R1-3可以相同或不同，并且选自直链或支链C 1-6烷基; 优选C 1-3烷基; R4选自C1-6烷基，优选在2,5位取代的支链C3-5烷基，以防止以eta1方式与金属中心配位的吡咯啉; 最优选本发明涉及（2,5-二叔丁基吡咯基）（三（乙氧基）钛，（2,5-二叔戊基吡咯基）（三（乙氧基）钛 本发明还涉及（环戊二烯基）（2,5-二甲基吡咯基）（双（乙氧基））钛。沉积方法 也考虑使用这些化合物。

    High coordination sphere group 2 metal β-diketiminate precursors
    6.
    发明授权
    High coordination sphere group 2 metal β-diketiminate precursors 有权
    高配位球第2组金属和重铬酸盐前体

    公开(公告)号：US08313807B2

    公开(公告)日：2012-11-20

    申请号：US12535192

    申请日：2009-08-04

    申请人： John Anthony Thomas Norman ,  Xinjian Lei

    发明人： John Anthony Thomas Norman ,  Xinjian Lei

    IPC分类号： C23C16/00 ,  C07C257/00 ,  C09B67/00

    CPC分类号： C07C211/14 ,  C07C217/40 ,  C07C225/06 ,  C23C16/18

    摘要： The present invention is directed to high coordination sphere Group 2 metal β-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing.

    摘要翻译： 本发明涉及高配位球2族金属和二铬酸盐组合物，例如双（N-（2,2-甲氧基乙基）-4-（2,2-甲氧基乙基亚氨基）-2-戊烯-2-氨基） 钡; 以及通过化学气相沉积，脉冲化学气相沉积，分子层沉积或原子层沉积沉积这种金属配体组合物的金属，以产生第二族金属含有膜，例如钛酸钡锶膜或钛酸锶薄膜或掺杂钡的镧系元素 作为电子设备制造的高k材料。

    Materials for adhesion enhancement of copper film on diffusion barriers
    7.
    发明授权
    Materials for adhesion enhancement of copper film on diffusion barriers 失效
    扩散壁上铜膜粘附增强的材料

    公开(公告)号：US07919409B2

    公开(公告)日：2011-04-05

    申请号：US12192603

    申请日：2008-08-15

    申请人： Hansong Cheng ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  David Allen Roberts ,  Bo Han ,  Chenggang Zhou ,  Jinping Wu

    发明人： Hansong Cheng ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  David Allen Roberts ,  Bo Han ,  Chenggang Zhou ,  Jinping Wu

    IPC分类号： H01L21/285

    CPC分类号： H01L21/76846

    摘要： We have used the state-of-the-art computational chemistry techniques to identify adhesion promoting layer materials that provide good adhesion of copper seed layer to the adhesion promoting layer and the adhesion promoting layer to the barrier layer. We have identified factors responsible for providing good adhesion of copper layer on various metallic surfaces and circumstances under which agglomeration of copper film occur. Several promising adhesion promoting layer materials based on chromium alloys have been predicted to be able to significantly enhance the adhesion of copper films. Chromium containing complexes of a polydentate β-ketoiminate have been identified as chromium containing precursors to make the alloys with chromium.

    摘要翻译： 我们使用最先进的计算化学技术来鉴别提供铜种子层对粘合促进层和粘附促进层对阻挡层的良好粘附性的粘附促进层材料。 我们已经确定了在各种金属表面上提供铜层的良好附着力以及发生铜膜附聚的情况的因素。 已经预测了几种基于铬合金的有希望的粘合促进层材料能够显着增强铜膜的粘附性。 已经鉴定了多齿和重铬酸盐的含铬络合物是含铬的前体，以使铬合金化。

    Group 2 Metal Precursors For Deposition Of Group 2 Metal Oxide Films
    8.
    发明申请
    Group 2 Metal Precursors For Deposition Of Group 2 Metal Oxide Films 审中-公开
    第2组金属前体用于沉积第2组金属氧化物膜

    公开(公告)号：US20100119726A1

    公开(公告)日：2010-05-13

    申请号：US12266806

    申请日：2008-11-07

    申请人： Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  Michael Ulman

    发明人： Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  Michael Ulman

    IPC分类号： C07C249/00 ,  C07D307/08 ,  C09D4/00 ,  B05D5/12 ,  C23C4/10

    CPC分类号： C07C225/14 ,  C23C16/403 ,  C23C16/404

    摘要： This invention is related to Group 2 metal-containing polydentate β-ketoiminate precursors and compositions comprising Group 2 metal-containing polydentate β-ketoiminate precursors, wherein the polydentate β-ketoiminate precursors incorporate an alkoxy group in the imino portion of the molecule. The compounds and compositions are useful for fabricating metal containing films on substrates such as silicon, metal nitride, metal oxide and other metal layers via chemical vapor deposition (CVD) processes.

    摘要翻译： 本发明涉及含有第2族金属的多齿骨架和酮基组合物前体和包含第2族金属的多齿骨架 - 酮基亚胺前体的组合物，其中多齿骨架和重沸石前体在分子的亚氨基部分中并入烷氧基 。 这些化合物和组合物可用于通过化学气相沉积（CVD）工艺在诸如硅，金属氮化物，金属氧化物和其它金属层的衬底上制造含金属膜。

    Metal Precursor Solutions For Chemical Vapor Deposition
    9.
    发明申请
    Metal Precursor Solutions For Chemical Vapor Deposition 审中-公开
    用于化学气相沉积的金属前体溶液

    公开(公告)号：US20080254218A1

    公开(公告)日：2008-10-16

    申请号：US12058200

    申请日：2008-03-28

    申请人： Xinjian Lei ,  Liam Quinn ,  John Anthony Thomas Norman ,  William Franklin Burgoyne ,  Gauri Sankar Lal ,  Michael Ulman ,  Daniel P. Spence

    发明人： Xinjian Lei ,  Liam Quinn ,  John Anthony Thomas Norman ,  William Franklin Burgoyne ,  Gauri Sankar Lal ,  Michael Ulman ,  Daniel P. Spence

    IPC分类号： C23C18/44

    CPC分类号： C23C16/18 ,  C23C16/16

    摘要： Metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates are described. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from β-diketonates, β-ketoiminates, β-diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors.

    摘要翻译： 描述了用于在衬底上制造保形的含金属膜的用于化学气相沉积工艺的包含原子层沉积的前体液体溶液的金属源。 更具体地说，金属源前体液体溶液包括（i）至少一种选自β-二酮酸酯，β-酮亚胺酸酯，β-二亚胺，烷基金属，金属羰基，烷基金属羰基，芳基金属，芳基金属羰基 ，环戊二烯基金属，环戊二烯基金属异腈，环戊二烯基金属腈，环戊二烯基金属羰基，金属醇盐，金属醚醇盐和金属酰胺，其中配体可以是单齿，双齿和多齿配位的金属原子，金属选自组2 14元素，和（ii）选自有机酰胺的溶剂，包括用于这种含金属源的前体的线性酰胺和环状酰胺。