利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

90 条记录 (耗时 0.023 秒)

    High Coordination Sphere Group 2 Metal B-Diketiminate Precursors
    3.
    发明申请
    High Coordination Sphere Group 2 Metal B-Diketiminate Precursors 有权
    高配位球2组金属B-Diketiminate前体

    公开(公告)号：US20100173075A1

    公开(公告)日：2010-07-08

    申请号：US12535192

    申请日：2009-08-04

    申请人： John Anthony Thomas Norman ,  Xinjian Lei

    发明人： John Anthony Thomas Norman ,  Xinjian Lei

    IPC分类号： C07F3/00 ,  C07C249/02 ,  C23C16/40 ,  C23C16/44 ,  C09D5/00

    CPC分类号： C07C211/14 ,  C07C217/40 ,  C07C225/06 ,  C23C16/18

    摘要： The present invention is directed to high coordination sphere Group 2 metal β-diketiminate compositions, such as bis(N-(2,2-methoxyethyl)-4-(2,2-methoxyethylimino)-2-penten-2-aminato) barium; and the deposition of the metals of such metal ligand compositions by chemical vapor deposition, pulsed chemical vapor deposition, molecular layer deposition or atomic layer deposition to produce Group 2 metal containing films, such as barium strontium titanate films or strontium titanate films or barium doped lanthanate as high k materials for electronic device manufacturing.

    摘要翻译： 本发明涉及高配位球2族金属和二铬酸盐组合物，例如双（N-（2,2-甲氧基乙基）-4-（2,2-甲氧基乙基亚氨基）-2-戊烯-2-氨基） 钡; 以及通过化学气相沉积，脉冲化学气相沉积，分子层沉积或原子层沉积沉积这种金属配体组合物的金属，以产生第二族金属含有膜，例如钛酸钡锶膜或钛酸锶薄膜或掺杂钡的镧系元素 作为电子设备制造的高k材料。

    Liquid Precursor for Depositing Group 4 Metal Containing Films
    6.
    发明申请
    Liquid Precursor for Depositing Group 4 Metal Containing Films 有权
    用于沉积第4组含金属膜的液体前体

    公开(公告)号：US20110135838A1

    公开(公告)日：2011-06-09

    申请号：US12950352

    申请日：2010-11-19

    申请人： Xinjian Lei ,  John Anthony Thomas Norman ,  Daniel P. Spence

    发明人： Xinjian Lei ,  John Anthony Thomas Norman ,  Daniel P. Spence

    IPC分类号： C23C16/30 ,  C07F7/28 ,  C23C16/44 ,  C23C16/50 ,  C23C16/48 ,  C23C16/56

    CPC分类号： C07F17/00 ,  C07F7/003

    摘要： The present invention is related to a family of liquid group 4 precursors represented by the formula: (pyr*)M(OR1)(OR2)(OR3) wherein pyr* is an alkyl substituted pyrrolyl, wherein M is group 4 metals include Ti, Zr, and Hf; wherein R1-3 can be same or different and selected from group consisting of linear or branched C1-6 alkyls; preferably C1-3 alkyls; R4 is selected from the group consisting of C1-6 alkyls, preferably branched C3-5 alkyls substituted at 2, 5 positions to prevent the pyrrolyl coordinated to the metal center in η1 fashion; n=2, 3, 4. Most preferably the invention is directed to (2,5-di-tert-butylpyrrolyl)(tris(ethoxy)titanium, (2,5-di-tert-amylpyrrolyl)(tris(ethoxy)titanium, and (2,5-di-tert-amylpyrrolyl)(tris(iso-propoxy)titanium. The invention is also directed to (cyclopentadienyl)(2,5-di-methylpyrrolyl)(bis(ethoxy))titanium. Deposition methods using these compounds are also contemplated.

    摘要翻译： 本发明涉及一种由式（pyr *）M（OR1）（OR2）（OR3）表示的液体组4前体，其中pyr *是烷基取代的吡咯基，其中M是第4族金属包括Ti， Zr和Hf; 其中R1-3可以相同或不同，并且选自直链或支链C 1-6烷基; 优选C 1-3烷基; R 4选自C 1-6烷基，优选在2,5位取代的支链C 3-5烷基，以防止以“1”方式与金属中心配位的吡咯基; 最优选本发明涉及（2,5-二叔丁基吡咯基）（三（乙氧基）钛，（2,5-二叔戊基吡咯基）（三（乙氧基）钛 本发明还涉及（环戊二烯基）（2,5-二甲基吡咯基）（双（乙氧基））钛。沉积方法 也考虑使用这些化合物。

    Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides
    7.
    发明授权
    Ti, Ta, Hf, Zr and related metal silicon amides for ALD/CVD of metal-silicon nitrides, oxides or oxynitrides 有权
    Ti，Ta，Hf，Zr和金属硅氮化物的ALD / CVD的相关金属硅酰胺，氧化物或氮氧化物

    公开(公告)号：US07754906B2

    公开(公告)日：2010-07-13

    申请号：US11522768

    申请日：2006-09-18

    申请人： John Anthony Thomas Norman ,  Xinjian Lei

    发明人： John Anthony Thomas Norman ,  Xinjian Lei

    IPC分类号： C07F7/18

    CPC分类号： C07F11/005 ,  C07F7/003 ,  C07F9/005

    摘要： An organometallic complex represented by the structure: wherein M is a metal selected from Group 4 of the Periodic Table of the Elements and R1-4 can be same or different selected from the group consisting of dialkylamide, difluoralkylamide, hydrogen, alkyl, alkoxy, fluoroalkyl and alkoxy, cycloaliphatic, and aryl with the additional provision that when R1 and R2 are dialkylamide, difluoralkylamide, alkoxy, fluoroalkyl and alkoxy, they can be connected to form a ring. Related compounds are also disclosed. CVD and ALD deposition processes using the complexes are also included.

    摘要翻译： 由以下结构表示的有机金属络合物：其中M是选自元素周期表第4族的金属和R1-4可以相同或不同，选自二烷基酰胺，二氟烷基酰胺，氢，烷基，烷氧基，氟代烷基 和烷氧基，脂环族和芳基，另外条件是当R1和R2是二烷基酰胺，二氟烷基酰胺，烷氧基，氟代烷基和烷氧基时，它们可以连接形成环。 还公开了相关化合物。 还包括使用复合物的CVD和ALD沉积方法。

    Metal Precursor Solutions For Chemical Vapor Deposition
    8.
    发明申请
    Metal Precursor Solutions For Chemical Vapor Deposition 审中-公开
    用于化学气相沉积的金属前体溶液

    公开(公告)号：US20080254218A1

    公开(公告)日：2008-10-16

    申请号：US12058200

    申请日：2008-03-28

    申请人： Xinjian Lei ,  Liam Quinn ,  John Anthony Thomas Norman ,  William Franklin Burgoyne ,  Gauri Sankar Lal ,  Michael Ulman ,  Daniel P. Spence

    发明人： Xinjian Lei ,  Liam Quinn ,  John Anthony Thomas Norman ,  William Franklin Burgoyne ,  Gauri Sankar Lal ,  Michael Ulman ,  Daniel P. Spence

    IPC分类号： C23C18/44

    CPC分类号： C23C16/18 ,  C23C16/16

    摘要： Metal source containing precursor liquid solutions for chemical vapor deposition processes, including atomic layer deposition, for fabricating conformal metal-containing films on substrates are described. More specifically, the metal source precursor liquid solutions are comprised of (i) at least one metal complex selected from β-diketonates, β-ketoiminates, β-diiminates, alkyl metal, metal carbonyl, alkyl metal carbonyl, aryl metal, aryl metal carbonyl, cyclopentadienyl metal, cyclopentadienyl metal isonitrile, cyclopentadienyl metal nitrile, cyclopentadienyl metal carbonyl, metal alkoxide, metal ether alkoxide, and metal amides wherein the ligand can be monodentate, bidentate and multidentate coordinating to the metal atom and the metal is selected from group 2 to 14 elements, and (ii) a solvent selected from organic amides including linear amides and cyclic amides for such metal source containing precursors.

    摘要翻译： 描述了用于在衬底上制造保形的含金属膜的用于化学气相沉积工艺的包含原子层沉积的前体液体溶液的金属源。 更具体地说，金属源前体液体溶液包括（i）至少一种选自β-二酮酸酯，β-酮亚胺酸酯，β-二亚胺，烷基金属，金属羰基，烷基金属羰基，芳基金属，芳基金属羰基 ，环戊二烯基金属，环戊二烯基金属异腈，环戊二烯基金属腈，环戊二烯基金属羰基，金属醇盐，金属醚醇盐和金属酰胺，其中配体可以是单齿，双齿和多齿配位的金属原子，金属选自组2 14元素，和（ii）选自有机酰胺的溶剂，包括用于这种含金属源的前体的线性酰胺和环状酰胺。

    Liquid composition containing aminoether for deposition of metal-containing films
    10.
    发明授权
    Liquid composition containing aminoether for deposition of metal-containing films 有权
    含有含有金属的膜的氨基醚的液体组合物

    公开(公告)号：US08507704B2

    公开(公告)日：2013-08-13

    申请号：US12871284

    申请日：2010-08-30

    申请人： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  Laura M. Matz

    发明人： Sergei Vladimirovich Ivanov ,  Xinjian Lei ,  Daniel P. Spence ,  John Anthony Thomas Norman ,  Laura M. Matz

    IPC分类号： C07F5/00 ,  C07F5/06 ,  C07F9/00 ,  C07F13/00 ,  C07F7/00 ,  C07F11/00 ,  C07F1/00 ,  C07F3/00 ,  C07F15/00 ,  C07C49/92

    CPC分类号： C09D1/00 ,  C23C16/18 ,  C23C16/404 ,  C23C16/448

    摘要： A formulation, comprising: a) at least one metal-ligand complex, wherein one or more ligands are selected from the group consisting of β-diketonates, β-ketoiminates, β-ketoesterates, β-diiminates, alkyls, carbonyls, alkyl carbonyls, cyclopentadienyls, pyrrolyls, alkoxides, amidinates, imidazolyls, and mixtures thereof; and the metal is selected from Group 2 to 16 elements of the Periodic Table of the Elements; and, b) at least one aminoether selected from the group consisting of R1R2NR3OR4NR5R6, R1OR4NR5R6, O(CH2CH2)2NR1, R1R2NR3N(CH2CH2)2O, R1R2NR3OR4N(CH2CH2)2O, O(CH2CH2)2NR1OR2N(CH2CH2)2O, and mixtures thereof, wherein R1-6 are independently selected from group consisting of C1-10 linear alkyl, C1-10 branched alkyl, C1-10 cyclic alkyl, C6-C10 aromatic, C1-10 alkylamine, C1-10 alkylaminoalkyl, C1-10 ether, C4-C10 cyclic ether, C4-C10 cyclic aminoether, and mixture thereof.

    摘要翻译： 一种制剂，其包含：a）至少一种金属 - 配体配合物，其中一个或多个配体选自β-二酮酸酯，β-酮亚胺酸酯，β-酮酯酸酯，β-二亚胺酯，烷基，羰基，烷基羰基， 环戊二烯基，吡咯烷基，烷氧基化物，脒基，咪唑啉及其混合物; 金属选自元素周期表第2〜16族元素; 和（b）至少一种选自下组的氨基醚：R1R2NR3OR4NR5R6，R1OR4NR5R6，O（CH2CH2）2NR1，R1R2NR3N（CH2CH2）2O，R1R2NR3OR4N（CH2CH2）2O，O（CH2CH2）2NR1OR2N（CH2CH2） 其中R1-6独立地选自C1-10直链烷基，C1-10支链烷基，C1-10环烷基，C6-C10芳族，C1-10烷基胺，C1-10烷基氨基烷基，C1-10醚，C4 -C 10环醚，C 4 -C 10环氨基醚及其混合物。