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    Trench metal oxide semiconductor with recessed trench material and remote contacts
    8.
    发明授权
    Trench metal oxide semiconductor with recessed trench material and remote contacts 有权
    沟槽金属氧化物半导体具有凹槽沟槽材料和远程触点

    公开(公告)号：US08368126B2

    公开(公告)日：2013-02-05

    申请号：US12098950

    申请日：2008-04-07

    申请人： Deva N. Pattanayak ,  Kyle Terrill ,  Sharon Shi ,  Misha Lee ,  Yuming Bai ,  Kam Lui ,  Kuo-In Chen

    发明人： Deva N. Pattanayak ,  Kyle Terrill ,  Sharon Shi ,  Misha Lee ,  Yuming Bai ,  Kam Lui ,  Kuo-In Chen

    IPC分类号： H01L29/80

    CPC分类号： H01L27/0727 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/66143 ,  H01L29/66477 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

    摘要： Remote contacts to the polysilicon regions of a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, as well as to the polysilicon regions of a MOS field effect transistor (MOSFET) section and of a TMBS section in a monolithically integrated TMBS and MOSFET (SKYFET) device, are employed. The polysilicon is recessed relative to adjacent mesas. Contact of the source metal to the polysilicon regions of the TMBS section is made through an extension of the polysilicon to outside the active region of the TMBS section. This change in the device architecture relieves the need to remove all of the oxides from both the polysilicon and silicon mesa regions of the TMBS section prior to the contact step. As a consequence, encroachment of contact metal into the sidewalls of the trenches in a TMBS device, or in a SKYFET device, is avoided.

    摘要翻译： 与沟槽金属氧化物半导体（MOS）势垒肖特基（TMBS）器件的多晶硅区域以及MOS场效应晶体管（MOSFET）部分的多晶硅区域和单片集成TMBS中的TMBS部分的远程触点和 MOSFET（SKYFET）器件。 多晶硅相对于相邻的台面凹陷。 源极金属与TMBS部分的多晶硅区域的接触是通过将多晶硅延伸到TMBS部分的有源区域之外来实现的。 器件结构的这种改变减轻了在接触步骤之前从TMBS部分的多晶硅和硅台面区域中去除所有氧化物的需要。 因此，避免了接触金属侵入到TMBS器件或SKYFET器件中的沟槽的侧壁中。

    Method of fabricating super trench MOSFET including buried source electrode
    9.
    发明授权
    Method of fabricating super trench MOSFET including buried source electrode 失效
    制造包括埋地源电极的超级沟槽MOSFET的方法

    公开(公告)号：US07704836B2

    公开(公告)日：2010-04-27

    申请号：US12080031

    申请日：2008-03-31

    申请人： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

    发明人： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

    IPC分类号： H01L21/336

    CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811

    摘要： In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.

    摘要翻译： 在沟槽MOSFET中，沟槽的下部包含与外延层和半导体衬底绝缘但与源极区域电接触的掩埋源电极。 当MOSFET处于“关闭”状态时，掩埋源电极的偏置导致台面的“漂移”区域耗尽，增强了MOSFET阻止电流的能力。 因此，可以增加漂移区的掺杂浓度，从而降低MOSFET的导通电阻。 埋入式源极还降低了MOSFET的栅 - 漏电容，提高了MOSFET在高频下的工作能力。 衬底可以有利地包括由环形台面分隔开的多个环形沟槽和从源极金属区域分开的多个栅极金属腿中的中心区域向外延伸的栅极金属层。

    SUPER-HIGH DENSITY TRENCH MOSFET
    10.
    发明申请
    SUPER-HIGH DENSITY TRENCH MOSFET 有权
    超高密度TRENCH MOSFET

    公开(公告)号：US20110089486A1

    公开(公告)日：2011-04-21

    申请号：US12788158

    申请日：2010-05-26

    申请人： Robert Q. Xu ,  Kuo-In Chen ,  Karl Lichtenberger ,  Sharon Shi ,  Qufei Chen ,  Kyle Terrill

    发明人： Robert Q. Xu ,  Kuo-In Chen ,  Karl Lichtenberger ,  Sharon Shi ,  Qufei Chen ,  Kyle Terrill

    IPC分类号： H01L29/78 ,  H01L21/336

    CPC分类号： H01L29/7813 ,  H01L21/26586 ,  H01L29/0638 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7811

    摘要： A method, in one embodiment, can include forming a plurality of trenches in a body region for a vertical metal-oxide semiconductor field-effect transistor (MOSFET). In addition, the method can include angle implanting source regions into the body region. Furthermore, dielectric material can be grown within the plurality of trenches. Gate polysilicon can be deposited within the plurality of trenches. Moreover, the method can include chemical mechanical polishing the gate polysilicon. The method can also include etching back the gate polysilicon within the plurality of trenches.

    摘要翻译： 在一个实施例中，一种方法可以包括在垂直金属氧化物半导体场效应晶体管（MOSFET）的主体区域中形成多个沟槽。 此外，该方法可以包括将角度注入源区域进入体区域。 此外，电介质材料可以在多个沟槽内生长。 栅极多晶硅可以沉积在多个沟槽内。 此外，该方法可以包括化学机械抛光栅极多晶硅。 该方法还可以包括蚀刻多个沟槽内的栅极多晶硅。