公开(公告)号：US07183610B2

公开(公告)日：2007-02-27

申请号：US10836833

申请日：2004-04-30

申请人： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

发明人： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811

摘要： In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.

摘要翻译： 在沟槽MOSFET中，沟槽的下部包含与外延层和半导体衬底绝缘但与源极区域电接触的掩埋源电极。 当MOSFET处于“关闭”状态时，掩埋源电极的偏置导致台面的“漂移”区域耗尽，增强了MOSFET阻止电流的能力。 因此，可以增加漂移区的掺杂浓度，从而降低MOSFET的导通电阻。 埋入式源极还降低了MOSFET的栅 - 漏电容，提高了MOSFET在高频下的工作能力。 衬底可以有利地包括由环形台面分隔开的多个环形沟槽和从源极金属区域分开的多个栅极金属腿中的中心区域向外延伸的栅极金属层。

公开(公告)号：US07704836B2

公开(公告)日：2010-04-27

申请号：US12080031

申请日：2008-03-31

申请人： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

发明人： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811

摘要： In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.

摘要翻译： 在沟槽MOSFET中，沟槽的下部包含与外延层和半导体衬底绝缘但与源极区域电接触的掩埋源电极。 当MOSFET处于“关闭”状态时，掩埋源电极的偏置导致台面的“漂移”区域耗尽，增强了MOSFET阻止电流的能力。 因此，可以增加漂移区的掺杂浓度，从而降低MOSFET的导通电阻。 埋入式源极还降低了MOSFET的栅 - 漏电容，提高了MOSFET在高频下的工作能力。 衬底可以有利地包括由环形台面分隔开的多个环形沟槽和从源极金属区域分开的多个栅极金属腿中的中心区域向外延伸的栅极金属层。

公开(公告)号：US20080182376A1

公开(公告)日：2008-07-31

申请号：US12080031

申请日：2008-03-31

申请人： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

发明人： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

IPC分类号： H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811

摘要： In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.

摘要翻译： 在沟槽MOSFET中，沟槽的下部包含与外延层和半导体衬底绝缘但与源极区域电接触的掩埋源电极。 当MOSFET处于“关闭”状态时，掩埋源电极的偏置导致台面的“漂移”区域耗尽，增强了MOSFET阻止电流的能力。 因此，可以增加漂移区的掺杂浓度，从而降低MOSFET的导通电阻。 埋入式源极还降低了MOSFET的栅 - 漏电容，提高了MOSFET在高频下的工作能力。 衬底可以有利地包括由环形台面分隔开的多个环形沟槽和从源极金属区域分开的多个栅极金属腿中的中心区域向外延伸的栅极金属层。

公开(公告)号：US20100019316A1

公开(公告)日：2010-01-28

申请号：US12586906

申请日：2009-09-29

申请人： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

发明人： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

IPC分类号： H01L29/78

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811

摘要： A method of fabricating a trench MOSFET, the lower portion of the trench containing a buried source electrode which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.

摘要翻译： 一种制造沟槽MOSFET的方法，沟槽的下部包含与外延层和半导体衬底绝缘但与源极区域电接触的掩埋源电极。 当MOSFET处于“关闭”状态时，掩埋源电极的偏置导致台面的“漂移”区域耗尽，增强了MOSFET阻止电流的能力。 因此，可以增加漂移区的掺杂浓度，从而降低MOSFET的导通电阻。 埋入式源极还降低了MOSFET的栅 - 漏电容，提高了MOSFET在高频下的工作能力。 衬底可以有利地包括由环形台面分隔开的多个环形沟槽和从源极金属区域分开的多个栅极金属腿中的中心区域向外延伸的栅极金属层。

公开(公告)号：US07557409B2

公开(公告)日：2009-07-07

申请号：US11698519

申请日：2007-01-26

申请人： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

发明人： Deva N. Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Hong Lui ,  Kuo-In Chen ,  Sharon Shi

IPC分类号： H01L29/76

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811

摘要： In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.

摘要翻译： 在沟槽MOSFET中，沟槽的下部包含与外延层和半导体衬底绝缘但与源极区域电接触的掩埋源电极。 当MOSFET处于“关闭”状态时，掩埋源电极的偏置导致台面的“漂移”区域耗尽，增强了MOSFET阻止电流的能力。 因此，可以增加漂移区的掺杂浓度，从而降低MOSFET的导通电阻。 埋入式源极还降低了MOSFET的栅 - 漏电容，提高了MOSFET在高频下的工作能力。 衬底可以有利地包括由环形台面分隔开的多个环形沟槽和从源极金属区域分开的多个栅极金属腿中的中心区域向外延伸的栅极金属层。

公开(公告)号：US06903412B2

公开(公告)日：2005-06-07

申请号：US10106812

申请日：2002-03-26

申请人： Mohamed N. Darwish ,  Christiana Yue ,  Frederick P. Giles ,  Kam Hong Lui ,  Kuo-In Chen ,  Kyle Terrill ,  Deva N. Pattanayak

发明人： Mohamed N. Darwish ,  Christiana Yue ,  Frederick P. Giles ,  Kam Hong Lui ,  Kuo-In Chen ,  Kyle Terrill ,  Deva N. Pattanayak

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7813 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/28238 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4983 ,  H01L29/512 ,  H01L29/518 ,  H01L29/66621 ,  H01L29/7834

摘要： The gate oxide layer of a trench MIS device includes a graduated transition region, where the thickness of the gate oxide layer decreases gradually from a thick section adjacent the bottom of the trench to a thin section adjacent the sidewall of the trench. The PN junction between the body and drain regions intersects the trench in the transition region. This structure allows for a greater margin of error in the placement of the PN junction during the manufacture of the device, since the intersection between the PN junction can be located anywhere in the transition region. The MIS device also has improved breakdown characteristics.

摘要翻译： 沟槽MIS器件的栅极氧化层包括刻蚀过渡区域，其中栅极氧化物层的厚度从邻近沟槽底部的厚部分逐渐减小到邻近沟槽侧壁的薄部分。 体区和漏区之间的PN结与过渡区中的沟槽相交。 这种结构允许在器件制造期间在PN结的放置方面具有更大的误差余量，因为PN结的交点可位于过渡区域的任何地方。 MIS器件还具有改善的击穿特性。

公开(公告)号：US06875657B2

公开(公告)日：2005-04-05

申请号：US10106896

申请日：2002-03-26

申请人： Christiana Yue ,  Mohamed N. Darwish ,  Frederick P. Giles ,  Kam Hong Lui ,  Kuo-In Chen ,  Kyle Terrill ,  Deva N. Pattanayak

发明人： Christiana Yue ,  Mohamed N. Darwish ,  Frederick P. Giles ,  Kam Hong Lui ,  Kuo-In Chen ,  Kyle Terrill ,  Deva N. Pattanayak

IPC分类号： H01L21/28 ,  H01L21/336 ,  H01L29/06 ,  H01L29/08 ,  H01L29/423 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/7813 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28211 ,  H01L21/28238 ,  H01L29/0634 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/42368 ,  H01L29/4983 ,  H01L29/512 ,  H01L29/518 ,  H01L29/66621 ,  H01L29/7834

摘要： A process for manufacturing a trench MIS device includes depositing a conformal nitride layer in the trench; etching the nitride layer to create an exposed area at the bottom of the trench; and heating the substrate and thereby growing an oxide layer in the exposed area. This process causes the mask layer to “lift off”, creating a “bird's beak” structure. This becomes a “transition region”, where the thickness of the oxide layer decreases gradually in a direction away from the exposed area. The method further includes diffusing a dopant into the substrate, the dopant forming a PN junction with a remaining portion of said substrate, and controlling the diffusion such that the PN junction intersects the trench in the transition region. Because the thickness of the oxide layer decreases gradually, the PN junction does not need to be located at a particular point, i.e., there is a margin of error. This improves the manufacturability of the device and enhances its breakdown characteristics.

摘要翻译： 用于制造沟槽MIS器件的工艺包括在沟槽中沉积共形氮化物层; 蚀刻氮化物层以在沟槽的底部产生暴露区域; 并加热衬底，从而在暴露区域中生长氧化物层。 该过程使掩模层“脱落”，形成“鸟的喙”结构。 这成为“过渡区域”，其中氧化物层的厚度在远离曝光区域的方向上逐渐减小。 该方法还包括将掺杂剂扩散到衬底中，掺杂剂与所述衬底的剩余部分形成PN结，并且控制扩散，使得PN结与过渡区域中的沟槽相交。 因为氧化物层的厚度逐渐减小，所以PN结不需要位于特定的位置，即存在误差范围。 这提高了器件的可制造性并增强了其击穿特性。

公开(公告)号：US20070187753A1

公开(公告)日：2007-08-16

申请号：US11698519

申请日：2007-01-26

申请人： Deva Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Lui ,  Kuo-In Chen ,  Sharon Shi

发明人： Deva Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Lui ,  Kuo-In Chen ,  Sharon Shi

IPC分类号： H01L29/94 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811

摘要： In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.

公开(公告)号：US20050242392A1

公开(公告)日：2005-11-03

申请号：US10836833

申请日：2004-04-30

申请人： Deva Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Lui ,  Kuo-In Chen ,  Sharon Shi

发明人： Deva Pattanayak ,  Yuming Bai ,  Kyle Terrill ,  Christiana Yue ,  Robert Xu ,  Kam Lui ,  Kuo-In Chen ,  Sharon Shi

IPC分类号： H01L21/336 ,  H01L29/06 ,  H01L29/40 ,  H01L29/417 ,  H01L29/423 ,  H01L29/78 ,  H01L29/94 ,  H01L21/8238

CPC分类号： H01L29/7813 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/66734 ,  H01L29/7811

摘要： In a trench MOSFET, the lower portion of the trench contains a buried source electrode, which is insulated from the epitaxial layer and semiconductor substrate but in electrical contact with the source region. When the MOSFET is in an “off” condition, the bias of the buried source electrode causes the “drift” region of the mesa to become depleted, enhancing the ability of the MOSFET to block current. The doping concentration of the drift region can therefore be increased, reducing the on-resistance of the MOSFET. The buried source electrode also reduces the gate-to-drain capacitance of the MOSFET, improving the ability of the MOSFET to operate at high frequencies. The substrate may advantageously include a plurality of annular trenches separated by annular mesas and a gate metal layer that extends outward from a central region in a plurality of gate metal legs separated by source metal regions.

摘要翻译： 在沟槽MOSFET中，沟槽的下部包含与外延层和半导体衬底绝缘但与源极区域电接触的掩埋源电极。 当MOSFET处于“关闭”状态时，掩埋源电极的偏置导致台面的“漂移”区域耗尽，增强了MOSFET阻止电流的能力。 因此，可以增加漂移区的掺杂浓度，从而降低MOSFET的导通电阻。 埋入式源极还降低了MOSFET的栅 - 漏电容，提高了MOSFET在高频下的工作能力。 衬底可以有利地包括由环形台面分隔开的多个环形沟槽和从源极金属区域分开的多个栅极金属腿中的中心区域向外延伸的栅极金属层。

公开(公告)号：US08368126B2

公开(公告)日：2013-02-05

申请号：US12098950

申请日：2008-04-07

申请人： Deva N. Pattanayak ,  Kyle Terrill ,  Sharon Shi ,  Misha Lee ,  Yuming Bai ,  Kam Lui ,  Kuo-In Chen

发明人： Deva N. Pattanayak ,  Kyle Terrill ,  Sharon Shi ,  Misha Lee ,  Yuming Bai ,  Kam Lui ,  Kuo-In Chen

IPC分类号： H01L29/80

CPC分类号： H01L27/0727 ,  H01L29/4238 ,  H01L29/456 ,  H01L29/66143 ,  H01L29/66477 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/872 ,  H01L29/8725

摘要： Remote contacts to the polysilicon regions of a trench metal oxide semiconductor (MOS) barrier Schottky (TMBS) device, as well as to the polysilicon regions of a MOS field effect transistor (MOSFET) section and of a TMBS section in a monolithically integrated TMBS and MOSFET (SKYFET) device, are employed. The polysilicon is recessed relative to adjacent mesas. Contact of the source metal to the polysilicon regions of the TMBS section is made through an extension of the polysilicon to outside the active region of the TMBS section. This change in the device architecture relieves the need to remove all of the oxides from both the polysilicon and silicon mesa regions of the TMBS section prior to the contact step. As a consequence, encroachment of contact metal into the sidewalls of the trenches in a TMBS device, or in a SKYFET device, is avoided.

摘要翻译： 与沟槽金属氧化物半导体（MOS）势垒肖特基（TMBS）器件的多晶硅区域以及MOS场效应晶体管（MOSFET）部分的多晶硅区域和单片集成TMBS中的TMBS部分的远程触点和 MOSFET（SKYFET）器件。 多晶硅相对于相邻的台面凹陷。 源极金属与TMBS部分的多晶硅区域的接触是通过将多晶硅延伸到TMBS部分的有源区域之外来实现的。 器件结构的这种改变减轻了在接触步骤之前从TMBS部分的多晶硅和硅台面区域中去除所有氧化物的需要。 因此，避免了接触金属侵入到TMBS器件或SKYFET器件中的沟槽的侧壁中。