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公开(公告)号:US5404805A
公开(公告)日:1995-04-11
申请号:US195505
申请日:1994-02-14
申请人: Yasuhiro Fujimoto , Shinichi Takahira , Yuji Satoh
发明人: Yasuhiro Fujimoto , Shinichi Takahira , Yuji Satoh
CPC分类号: B65H29/70 , B65H29/242 , B65H2406/323 , B65H2511/10 , B65H2511/13
摘要: In a paper ejection device for a stencil printing device provided with a lifting member for producing a curvature in each sheet of ejected printing paper as seen in a cross section perpendicular to the direction of paper ejection, the lifting member is allowed to move at least between a first position which is relatively retracted from the paper ejection passage and a second position which relatively protrudes into the paper ejection passage. The movement of the lifting member may be effected according to the size or the kind of the printing paper or depending on whether a sorter is connected to the printer or not. Thus, an appropriate curvature can be given to the ejected printing paper without requiring any manual work by the user. Thus, a satisfactory paper ejecting operation can be ensured at all times without requiring any manual work by the operator of the stencil printing device.
摘要翻译: 在用于模版印刷装置的纸张排出装置中,其具有用于在垂直于纸张排出方向的横截面中看到的每张排出的打印纸中产生曲率的提升构件,使提升构件至少在 从纸张排出通道相对缩回的第一位置和相对地突出到纸张排出通道中的第二位置。 提升构件的移动可以根据打印纸的尺寸或种类进行,或者取决于分拣机是否连接到打印机。 因此,可以对排出的打印纸给出适当的曲率,而不需要用户的任何手动工作。 因此,可以始终确保令人满意的纸张排出操作,而不需要模版印刷装置的操作者的任何手动操作。
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公开(公告)号:US07704759B2
公开(公告)日:2010-04-27
申请号:US12208833
申请日:2008-09-11
IPC分类号: H01L21/00
CPC分类号: H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要: In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译: 在半导体激光器件中,将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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公开(公告)号:US20080198887A1
公开(公告)日:2008-08-21
申请号:US11907016
申请日:2007-10-09
申请人: Yasuhiro Fujimoto , Toru Takayama , Isao Kidoguchi
发明人: Yasuhiro Fujimoto , Toru Takayama , Isao Kidoguchi
CPC分类号: H01S5/22 , B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/222 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要: A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.
摘要翻译: 半导体激光器件包括在半导体衬底上彼此分开形成的第一腔和第二腔。 第一腔包括第一缓冲层和包括第一有源层的第一半导体层,第二腔包括第二缓冲层和包括第二有源层的第二半导体层。 在第一半导体层和第二半导体层的端面附近的区域设置有窗口结构。 第一缓冲层的带隙大于第一缓冲层的带隙,第二缓冲层的带隙大于第二有源层的带隙。
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公开(公告)号:US20090017570A1
公开(公告)日:2009-01-15
申请号:US12208833
申请日:2008-09-11
IPC分类号: H01L21/02
CPC分类号: H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要: In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译: 在半导体激光器件中,将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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公开(公告)号:US20070223550A1
公开(公告)日:2007-09-27
申请号:US11727229
申请日:2007-03-26
IPC分类号: H01S5/00
CPC分类号: H01S5/2231 , B82Y20/00 , H01S5/0021 , H01S5/2206 , H01S5/3201 , H01S5/3211 , H01S5/34326 , H01S2301/173
摘要: A semiconductor laser device has a multilayer structure including a first clad layer, an active layer, and a second clad layer stacked successively on a semiconductor substrate in order of increasing distance from the semiconductor substrate. At least one of the first clad layer and the second clad layer has a compressive distortion with respect to the semiconductor substrate. At least one of the first clad layer and the second clad layer includes a semiconductor layer having a tensile distortion with respect to the semiconductor substrate.
摘要翻译: 半导体激光器件具有多层结构,其包括依次在半导体衬底上堆叠的第一覆盖层,有源层和第二覆盖层,以便与半导体衬底的距离增加。 第一覆盖层和第二覆盖层中的至少一个相对于半导体基板具有压缩变形。 第一覆盖层和第二覆盖层中的至少一个包括相对于半导体基板具有拉伸变形的半导体层。
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公开(公告)号:US6155563A
公开(公告)日:2000-12-05
申请号:US451447
申请日:1999-11-30
申请人: Takahiro Ono , Takeshi Kakinuma , Tetsunobu Shibata , Nobuyoshi Suzuki , Yasuhiro Fujimoto , Masahiro Ueda
发明人: Takahiro Ono , Takeshi Kakinuma , Tetsunobu Shibata , Nobuyoshi Suzuki , Yasuhiro Fujimoto , Masahiro Ueda
CPC分类号: G03G15/6538 , B65H39/11 , B65H2408/113
摘要: A sheet sorter includes an array of a plurality of sorting trays which are mounted on a sorter body and arranged in a vertical direction and a general-purpose tray which is mounted on the sorter body and is larger than each of the sorting trays in capacity so that it accommodates a larger number of sheets than each of the sorting trays. A tray drive mechanism provided in the sorter body moves up and down the sorting trays and the general-purpose tray so that sheets transferred by a transfer mechanism provided in the sorter body are selectively discharged onto the sorting trays or the general-purpose tray. The array of the sorting trays is positioned above the general-purpose tray. The sorting tray array and the general-purpose tray are normally held in a position where the sheet discharge port of the sheet transfer mechanism is positioned between the lowermost tray of the sorting tray array and the general-purpose tray as seen in a vertical direction.
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公开(公告)号:US09474109B2
公开(公告)日:2016-10-18
申请号:US13584570
申请日:2012-08-13
申请人: Toru Tonomura , Yasuhiro Fujimoto
发明人: Toru Tonomura , Yasuhiro Fujimoto
摘要: An induction heating apparatus capable of heating a conductive plate member throughout in a widthwise direction is disclosed. Specifically, the present invention is configured to have flat-shaped coils, each forming a magnetic path in a center portion thereof, provided on upper and lower sides of the conductive plate member so as to heat the conductive plate member and to have circumferential coils provided on right and left end sides of magnetic metal casings through which the circumferential magnetic paths of the flat-shaped coils pass, whereby magnetic paths of the circumferential coils pass through both end portions of the conductive plate member.
摘要翻译: 公开了能够沿宽度方向加热导电板构件的感应加热装置。 具体地说,本发明被构造成具有扁平形状的线圈,每个平面形状的线圈在导电板构件的上侧和下侧设置在其中心部分上,以便加热导电板构件并具有环形线圈, 在磁性金属外壳的右侧和左侧端部,平面状线圈的周向磁路通过该磁性金属外壳,从而圆周线圈的磁路通过导电板构件的两个端部。
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公开(公告)号:US07653104B2
公开(公告)日:2010-01-26
申请号:US12246859
申请日:2008-10-07
IPC分类号: H01S5/00
CPC分类号: H01S5/4031 , B82Y20/00 , H01S5/3406 , H01S5/34313 , H01S5/34326 , H01S5/4087 , H01S2301/173
摘要: A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a light emitting point. A current block layer made of SiNx is formed on both sides of each ridge stripe portion, and a strain relaxing layer made of ZrO2 is selectively formed on an outer side of each ridge stripe region on the current block layer. Provided that Tc is a thermal expansion coefficient of the p-type cladding layers, Tb is a thermal expansion coefficient of the current block layer, and Ts is a thermal expansion coefficient of the strain relaxing layer, the relation of Tb
摘要翻译: 红色激光部分和红外激光部分集成在n型GaAs衬底上。 在红外激光部中由p型AlGaInP构成的p型覆层和在红外线激光部中由p型AlGaInP构成的p型覆层具有具有发光点的脊条部。 在每个脊条部分的两侧形成由SiNx形成的电流阻挡层,并且在当前阻挡层上的每个脊条区域的外侧选择性地形成由ZrO 2制成的应变缓和层。 假设Tc是p型覆层的热膨胀系数,Tb是当前阻挡层的热膨胀系数,Ts是应变缓和层的热膨胀系数,Tb
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公开(公告)号:US07561609B2
公开(公告)日:2009-07-14
申请号:US11907016
申请日:2007-10-09
申请人: Yasuhiro Fujimoto , Toru Takayama , Isao Kidoguchi
发明人: Yasuhiro Fujimoto , Toru Takayama , Isao Kidoguchi
IPC分类号: H01S5/00
CPC分类号: H01S5/22 , B82Y20/00 , H01S5/1039 , H01S5/162 , H01S5/222 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要: A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.
摘要翻译: 半导体激光器件包括在半导体衬底上彼此分开形成的第一腔和第二腔。 第一腔包括第一缓冲层和包括第一有源层的第一半导体层,第二腔包括第二缓冲层和包括第二有源层的第二半导体层。 在第一半导体层和第二半导体层的端面附近的区域设置有窗口结构。 第一缓冲层的带隙大于第一缓冲层的带隙,第二缓冲层的带隙大于第二有源层的带隙。
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公开(公告)号:US07433380B2
公开(公告)日:2008-10-07
申请号:US11510638
申请日:2006-08-28
IPC分类号: H01S5/00
CPC分类号: H01S5/2231 , B82Y20/00 , H01S5/0655 , H01S5/0658 , H01S5/209 , H01S5/2219 , H01S5/3202 , H01S5/3211 , H01S5/34313 , H01S5/34326 , H01S5/4087
摘要: In a semiconductor laser device, a plurality of light-emitting elements emitting light with different wavelengths are integrated on a substrate. Each of the light-emitting elements includes, on the substrate, an active layer and cladding layers respectively provided on top and bottom of the active layer. One of the cladding layers provided on top of the active layer is an upper cladding layer having a mesa ridge portion. An etching stopper layer for forming the ridge portion is interposed between the ridge portion and the other portion of the upper cladding layer. The thickness of the etching stopper layer varies among the light-emitting elements.
摘要翻译: 在半导体激光器件中,将发射不同波长的光的多个发光元件集成在基板上。 每个发光元件在基板上包括分别设置在有源层的顶部和底部上的有源层和包覆层。 设置在有源层顶部的包层之一是具有台面脊部的上包层。 用于形成脊部的蚀刻停止层插入在上部包层的脊部与另一部分之间。 蚀刻阻挡层的厚度在发光元件之间变化。
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