Paper ejection device for a stencil printing device
    1.
    发明授权
    Paper ejection device for a stencil printing device 失效
    用于模版印刷装置的纸张排出装置

    公开(公告)号:US5404805A

    公开(公告)日:1995-04-11

    申请号:US195505

    申请日:1994-02-14

    摘要: In a paper ejection device for a stencil printing device provided with a lifting member for producing a curvature in each sheet of ejected printing paper as seen in a cross section perpendicular to the direction of paper ejection, the lifting member is allowed to move at least between a first position which is relatively retracted from the paper ejection passage and a second position which relatively protrudes into the paper ejection passage. The movement of the lifting member may be effected according to the size or the kind of the printing paper or depending on whether a sorter is connected to the printer or not. Thus, an appropriate curvature can be given to the ejected printing paper without requiring any manual work by the user. Thus, a satisfactory paper ejecting operation can be ensured at all times without requiring any manual work by the operator of the stencil printing device.

    摘要翻译: 在用于模版印刷装置的纸张排出装置中,其具有用于在垂直于纸张排出方向的横截面中看到的每张排出的打印纸中产生曲率的提升构件,使提升构件至少在 从纸张排出通道相对缩回的第一位置和相对地突出到纸张排出通道中的第二位置。 提升构件的移动可以根据打印纸的尺寸或种类进行,或者取决于分拣机是否连接到打印机。 因此,可以对排出的打印纸给出适当的曲率,而不需要用户的任何手动工作。 因此,可以始终确保令人满意的纸张排出操作,而不需要模版印刷装置的操作者的任何手动操作。

    Semiconductor laser device and method of fabricating the same
    3.
    发明申请
    Semiconductor laser device and method of fabricating the same 失效
    半导体激光器件及其制造方法

    公开(公告)号:US20080198887A1

    公开(公告)日:2008-08-21

    申请号:US11907016

    申请日:2007-10-09

    IPC分类号: H01S5/22 H01L33/00

    摘要: A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.

    摘要翻译: 半导体激光器件包括在半导体衬底上彼此分开形成的第一腔和第二腔。 第一腔包括第一缓冲层和包括第一有源层的第一半导体层,第二腔包括第二缓冲层和包括第二有源层的第二半导体层。 在第一半导体层和第二半导体层的端面附近的区域设置有窗口结构。 第一缓冲层的带隙大于第一缓冲层的带隙,第二缓冲层的带隙大于第二有源层的带隙。

    Induction heating apparatus
    7.
    发明授权
    Induction heating apparatus 有权
    感应加热装置

    公开(公告)号:US09474109B2

    公开(公告)日:2016-10-18

    申请号:US13584570

    申请日:2012-08-13

    IPC分类号: H05B6/36 H05B6/10

    CPC分类号: H05B6/104 H05B6/365

    摘要: An induction heating apparatus capable of heating a conductive plate member throughout in a widthwise direction is disclosed. Specifically, the present invention is configured to have flat-shaped coils, each forming a magnetic path in a center portion thereof, provided on upper and lower sides of the conductive plate member so as to heat the conductive plate member and to have circumferential coils provided on right and left end sides of magnetic metal casings through which the circumferential magnetic paths of the flat-shaped coils pass, whereby magnetic paths of the circumferential coils pass through both end portions of the conductive plate member.

    摘要翻译: 公开了能够沿宽度方向加热导电板构件的感应加热装置。 具体地说,本发明被构造成具有扁平形状的线圈,每个平面形状的线圈在导电板构件的上侧和下侧设置在其中心部分上,以便加热导电板构件并具有环形线圈, 在磁性金属外壳的右侧和左侧端部,平面状线圈的周向磁路通过该磁性金属外壳,从而圆周线圈的磁路通过导电板构件的两个端部。

    Semiconductor laser device
    8.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号:US07653104B2

    公开(公告)日:2010-01-26

    申请号:US12246859

    申请日:2008-10-07

    IPC分类号: H01S5/00

    摘要: A red laser portion and an infrared laser portion are integrated on an n-type GaAs substrate. A p-type cladding layer made of p-type AlGaInP in the red laser portion and a p-type cladding layer made of p-type AlGaInP in the infrared laser portion have a ridge stripe portion having a light emitting point. A current block layer made of SiNx is formed on both sides of each ridge stripe portion, and a strain relaxing layer made of ZrO2 is selectively formed on an outer side of each ridge stripe region on the current block layer. Provided that Tc is a thermal expansion coefficient of the p-type cladding layers, Tb is a thermal expansion coefficient of the current block layer, and Ts is a thermal expansion coefficient of the strain relaxing layer, the relation of Tb

    摘要翻译: 红色激光部分和红外激光部分集成在n型GaAs衬底上。 在红外激光部中由p型AlGaInP构成的p型覆层和在红外线激光部中由p型AlGaInP构成的p型覆层具有具有发光点的脊条部。 在每个脊条部分的两侧形成由SiNx形成的电流阻挡层,并且在当前阻挡层上的每个脊条区域的外侧选择性地形成由ZrO 2制成的应变缓和层。 假设Tc是p型覆层的热膨胀系数,Tb是当前阻挡层的热膨胀系数,Ts是应变缓和层的热膨胀系数,Tb

    Semiconductor laser device and method of fabricating the same
    9.
    发明授权
    Semiconductor laser device and method of fabricating the same 失效
    半导体激光器件及其制造方法

    公开(公告)号:US07561609B2

    公开(公告)日:2009-07-14

    申请号:US11907016

    申请日:2007-10-09

    IPC分类号: H01S5/00

    摘要: A semiconductor laser device includes a first cavity and a second cavity formed apart from each other over a semiconductor substrate. The first cavity includes a first buffer layer and a first semiconductor layer including a first active layer, and the second cavity includes a second buffer layer and a second semiconductor layer including a second active layer. A window structure is provided in a region near an end face of each of the first semiconductor layer and the second semiconductor layer. A band gap of the first buffer layer is greater than that of the first active layer, and a band gap of the second buffer layer is greater than that of the second active layer.

    摘要翻译: 半导体激光器件包括在半导体衬底上彼此分开形成的第一腔和第二腔。 第一腔包括第一缓冲层和包括第一有源层的第一半导体层,第二腔包括第二缓冲层和包括第二有源层的第二半导体层。 在第一半导体层和第二半导体层的端面附近的区域设置有窗口结构。 第一缓冲层的带隙大于第一缓冲层的带隙,第二缓冲层的带隙大于第二有源层的带隙。