公开(公告)号：US4277304A

公开(公告)日：1981-07-07

申请号：US87041

申请日：1979-10-22

申请人： Yasuhiro Horiike ,  Haruo Okano ,  Masahiro Shibagaki ,  Katsuo Kadono

发明人： Yasuhiro Horiike ,  Haruo Okano ,  Masahiro Shibagaki ,  Katsuo Kadono

IPC分类号： H01L21/302 ,  H01J27/14 ,  H01J37/08 ,  H01L21/306 ,  H01J17/04

CPC分类号： H01J37/08 ,  H01J27/14

摘要： An ion source suitably used for an etching process among manufacturing processes for e.g. semiconductor devices, comprising a vacuum container, an anode disposed in the vacuum container, a cathode having one or more looped slits formed opposite said anode, and one or more permanent magnets located in a position or positions corresponding to a portion of the cathode surrounded by the looped slit or slits and forming a magnetic field having a direction at substantially right angles to the direction of an electric field formed by applying a voltage between the anode and cathode, a gas which is introduced into the vacuum container through an inlet means formed in the vacuum container being made into gas plasma by means of the electric and magnetic fields at right angles to each other, whereby positive ions in the gas plasma will be taken out through the looped slit or slits.

摘要翻译： 适合用于例如制造工艺中的蚀刻工艺的离子源。 半导体器件，包括真空容器，设置在真空容器中的阳极，具有与所述阳极相对形成的一个或多个环状狭缝的阴极和位于与阴极的一部分相对应的位置或位置的一个或多个位置， 环形狭缝或狭缝，并形成磁场，该磁场具有与通过在阳极和阴极之间施加电压而形成的电场的方向基本上成直角的方向，通过形成在入口装置中的入口装置引入到真空容器中的气体 真空容器通过彼此成直角的电场和磁场制成气体等离子体，由此气体等离子体中的正离子将通过环形狭缝或狭缝取出。

公开(公告)号：US5112645A

公开(公告)日：1992-05-12

申请号：US622275

申请日：1990-12-06

申请人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01L21/205 ,  C23C16/48 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3213

CPC分类号： C23C16/483 ,  C23C16/482 ,  C23F4/00 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/312 ,  H01L21/32137 ,  H01L21/32139

摘要： A phototreating method comprises the steps of introducing a photoreactive gas into a chamber housing a workpiece, emitting first light substantially perpendicularly to a surface of the workpiece, and emitting second light substantially perpendicularly to the surface of the workpiece simultaneously with or after radiation of the first light. The surface of the workpiece is coated utilizing a photochemical reaction of the photoreactive gas caused by radiation of the first light and the second light.

公开(公告)号：US4668337A

公开(公告)日：1987-05-26

申请号：US774721

申请日：1985-09-11

申请人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/306

CPC分类号： H01L21/32137 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/32135 ,  H01L21/32136

摘要： A dry-etching method for performing anisotropic etching on a semiconductor substrate by employing an etching gas together with a film-forming gas while irradiating light or an X-ray on the semiconductor substrate. In this method at least one of the etching gas or film-forming gas is excited in a separated chamber before being introduced into an etching chamber. A dry-etching apparatus for performing the above dry-etching method is also proposed.

摘要翻译： 一种干蚀刻方法，用于在半导体衬底上照射光或X射线时，通过在成膜气体的同时使用蚀刻气体，在半导体衬底上进行各向异性蚀刻。 在这种方法中，至少一种蚀刻气体或成膜气体在被引入蚀刻室之前在分离的室中被激发。 还提出了用于执行上述干蚀刻方法的干法蚀刻装置。

公开(公告)号：US4878995A

公开(公告)日：1989-11-07

申请号：US214368

申请日：1988-07-01

申请人： Tsunetoshi Arikado ,  Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Tsunetoshi Arikado ,  Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/32137 ,  H01L21/31116 ,  H01L21/32136

摘要： This invention provides a method of dry etching and an apparatus for use with such method capable of producing a multi-layered structure having substantially a vertical wall and high selectivity. There is provided a method of the dry etching that disposing an object having a first film and second film thereon in a vacuum chamber, introducing an activated reactive gas, and cooling the object in the temperature or less being deposited a film including at least the first film material on the first film.

公开(公告)号：US4526643A

公开(公告)日：1985-07-02

申请号：US578082

申请日：1984-02-08

申请人： Haruo Okano ,  Takashi Yamazaki ,  Yasuhiro Horiike ,  Hiromichi Horie

发明人： Haruo Okano ,  Takashi Yamazaki ,  Yasuhiro Horiike ,  Hiromichi Horie

IPC分类号： H01J37/32 ,  H01J37/34 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/306 ,  B44C1/22 ,  C03C15/00 ,  C23F1/02

CPC分类号： H01L21/31116 ,  H01J37/32623 ,  H01J37/3408 ,  H01J37/3455

摘要： A dry etching apparatus using reactive ions is disclosed. A housing in which a workpiece is etched is provided with a cathode electrode on which the workpiece is mounted, and an anode electrode arranged opposite the cathode electrode. An etching gas is supplied to the housing, and pressure inside of the housing is held at a certain level. High frequency voltage is applied between the cathode and anode electrodes. A plurality of magnets are arranged outside of the housing to generate magnetic fields around the cathode electrode. The plurality of magnets are separated from one another, with a predetermined clearance being interposed therebetween, to form an endless track. The plurality of magnets are moved along the endless track, to thereby cause the magnetic fields to be moved in one direction on the cathode electrode.

摘要翻译： 公开了一种使用反应离子的干蚀刻装置。 在其中蚀刻工件的壳体设置有安装有工件的阴极电极和与阴极电极相对布置的阳极电极。 蚀刻气体被供给到壳体，壳体内的压力保持在一定水平。 在阴极和阳极之间施加高频电压。 多个磁体设置在外壳的外部，以在阴极周围产生磁场。 多个磁体彼此分离，其间插入预定的间隙，以形成环形轨道。 多个磁体沿着环形轨道移动，从而使得磁场在阴极上沿一个方向移动。

公开(公告)号：US4844774A

公开(公告)日：1989-07-04

申请号：US180687

申请日：1988-04-08

申请人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01L21/205 ,  C23C16/48 ,  C23F4/00 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3213

CPC分类号： C23C16/483 ,  C23C16/482 ,  C23F4/00 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/312 ,  H01L21/32137 ,  H01L21/32139

摘要： A phototreating method comprises the steps of introducing a photoreactive gas into a chamber housing a workpiece, emitting first light substantially perpendicularly to a surface of the workpiece, and emitting second light substantially perpendicularly to the surface of the workpiece simultaneously with or after radiation of the first light. The surface of the workpiece is treated utilizing a photochemical reaction of the photoreactive gas caused by radiation of the first light and/or the second light.

摘要翻译： 光复制方法包括以下步骤：将光反应气体引入到容纳工件的腔室中，发射基本上垂直于工件表面的第一光，并且在第一和第二辐射辐射之后或之后同时发射基本垂直于工件表面的第二光 光。 使用由第一光和/或第二光的辐射引起的光反应性气体的光化学反应来处理工件的表面。

公开(公告)号：US4698238A

公开(公告)日：1987-10-06

申请号：US826379

申请日：1986-02-05

申请人： Nobuo Hayasaka ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Nobuo Hayasaka ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01L21/302 ,  C23F1/02 ,  G03F7/004 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/312 ,  H01L21/3213 ,  B05D3/06

CPC分类号： G03F7/0041 ,  C23F1/02 ,  H01L21/268 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/32135 ,  H01L21/32137

摘要： A pattern is formed by providing a reaction field in which a photo-induced reaction proceeds when a substrate is irradiated with light so as to form a pattern on the substrate, and setting, in the reaction field, conditions for establishing a nonlinear relationship between the intensity of the light and the rate of the photo-induced reaction. The substrate is selectively irradiated with light in the reaction field under the conditions set therein so as to selectively form a pattern in the irradiated portion of the substrate in accordance with the selective irradiation.

摘要翻译： 通过提供在基板被光照射时进行光诱导反应以在基板上形成图案的反应场形成图案，并且在反应场中设定用于建立非线性关系的条件 光的强度和光诱导反应的速率。 在反应场中，在设定的条件下，用光选择性地照射基板，从而根据选择性照射选择性地在基板的照射部分中形成图案。

公开(公告)号：US4838978A

公开(公告)日：1989-06-13

申请号：US123353

申请日：1987-11-20

申请人： Makoto Sekine ,  Haruo Okano ,  Tsunetoshi Arikado ,  Yasuhiro Horiike

发明人： Makoto Sekine ,  Haruo Okano ,  Tsunetoshi Arikado ,  Yasuhiro Horiike

IPC分类号： H01L21/302 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065

CPC分类号： H01L21/67069 ,  H01J37/32431

摘要： A dry etching apparatus which includes an anode located at an upper side and a cathode located at a lower side which face each other in a vacuum vessel. A high-frequency power can be applied across the anode and the cathode. A flange section extends from the inner wall of the vacuum vessel, and is located between the anode and the cathode. A semiconductor wafer can be placed on the cathode through a tray. The cathode is moved toward the anode together with the tray and the wafer. When the edge portion of the tray abuts against the flange section, the interior of the vacuum vessel is partitioned into an etching chamber and the other chamber. A magnetic field is applied to the etching chamber from outside the vacuum vessel, and an etching gas is also introduced into the etching chamber. When the etching gas is introduced, the interior of the etching chamber is evacuated to be maintained at a predetermined pressure.

摘要翻译： 一种干蚀刻装置，其包括位于上侧的阳极和位于真空容器中彼此面对的下侧的阴极。 可以在阳极和阴极之间施加高频功率。 凸缘部分从真空容器的内壁延伸，并位于阳极和阴极之间。 可以通过托盘将半导体晶片放置在阴极上。 阴极与托盘和晶片一起向阳极移动。 当托盘的边缘部分抵靠凸缘部分时，真空容器的内部被分隔成蚀刻室和另一个室。 从真空容器的外部向蚀刻室施加磁场，蚀刻气体也被引入蚀刻室。 当蚀刻气体被引入时，蚀刻室的内部被抽真空以保持在预定的压力。

公开(公告)号：US4786361A

公开(公告)日：1988-11-22

申请号：US22368

申请日：1987-03-05

申请人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01J37/32 ,  H01L21/308 ,  B44C1/22

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01L21/3085

摘要： A process is disclosed which etches a workpiece, with an etching mask of a predetermined pattern formed on the surface of the workpiece, on an apparatus which includes a container for holding first and second electrodes opposite to each other and a magnetic field generator arranged on a side opposite to that side of the second electrode where the second electrode faces the first electrode, which comprises placing the workpiece on the first electrode, supplying a feed gas into the container, evacuating air in the container to set pressure in the container at a level of 10.sup.-2 torrs, and applying high frequency power across the first and second electrodes to yield plasma whereby the workpiece is etched.

摘要翻译： 公开了一种工艺，在工件的表面上刻蚀具有预定图案的蚀刻掩模的工件，该设备包括用于保持彼此相对的第一和第二电极的容器和布置在工件上的磁场发生器 所述第二电极与所述第二电极的面对所述第一电极的所述一侧相反，所述第二电极包括将所述工件放置在所述第一电极上，将进料气体供应到所述容器中，抽空所述容器中的空气以将所述容器中的压力设定在一定水平 为10-2托，并且通过第一和第二电极施加高频电力以产生等离子体，从而蚀刻工件。

公开(公告)号：US4642171A

公开(公告)日：1987-02-10

申请号：US756318

申请日：1985-07-18

申请人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

发明人： Makoto Sekine ,  Haruo Okano ,  Yasuhiro Horiike

IPC分类号： H01L21/205 ,  B01J19/12 ,  C23C16/48 ,  C23F1/12 ,  C23F4/00 ,  G03F7/004 ,  H01L21/302 ,  H01L21/31 ,  C23C15/00

CPC分类号： C23C16/483 ,  B01J19/12 ,  C23F4/00 ,  G03F7/0041

摘要： A phototreating apparatus has a vacuum container for storing a solid material, a gas inlet for introducing a photoreactive gas into the container, and a light source for radiating into the container, light having a specific wavelength such that it causes a photoreaction of the photoreactive gas. The apparatus phototreats the solid material in the container by utilizing the photoreaction of the photoreactive gas. At least an inner surface of the vacuum container consists of a material which absorbs the light having the specific wavelength.

摘要翻译： 光固化装置具有用于储存固体材料的真空容器，用于将光反应性气体引入容器的气体入口和用于辐射到容器中的光源，具有特定波长的光，使得其引起光反应气体的光反应 。 该设备通过利用光反应性气体的光反应来对容器中的固体材料进行照射。 至少真空容器的内表面由吸收特定波长的光的材料构成。