公开(公告)号：US5923054A

公开(公告)日：1999-07-13

申请号：US851272

申请日：1997-05-05

申请人： Yasuji Kobashi ,  Tadashige Sato ,  Hitora Takahashi

发明人： Yasuji Kobashi ,  Tadashige Sato ,  Hitora Takahashi

IPC分类号： H01L33/16 ,  H01L33/20 ,  H01L33/30 ,  H01L33/00 ,  H01L29/04 ,  H01L31/036

CPC分类号： H01L33/16 ,  Y10S438/973

摘要： In a light-emitting diode, which comprises epitaxial wafer where a gallium phosphide or a gallium phosphide arsenide mixed crystal epitaxial layer is grown on a III-V family compound single crystal substrate having zinc blende type crystal structure, the surface of said substrate has a plane tilted by 5 to 16.degree. from a (100) plane toward �010!, �001!, �0-10! or �00-1!, or a plane having crystallographically equivalent crystal plane orientation to this plane. As a result, it is possible to improve light emitting output and to ensure longer service life.

摘要翻译： 在包含磷化镓或磷化镓砷混合晶体外延层的外延晶片的发光二极管中，在具有闪锌矿型晶体结构的III-V族复合单晶衬底上生长，所述衬底的表面具有 从（100）面向[010]，[001]，[0-10]或[00-1]倾斜5〜16°的平面，或具有与该平面相同的晶面取向的平面。 结果，可以提高发光输出并确保更长的使用寿命。

公开(公告)号：US5856208A

公开(公告)日：1999-01-05

申请号：US657360

申请日：1996-06-03

申请人： Tadashige Sato ,  Megumi Imai ,  Hitora Takahashi

发明人： Tadashige Sato ,  Megumi Imai ,  Hitora Takahashi

IPC分类号： H01L21/205 ,  H01L33/30 ,  H01L33/36 ,  H01L21/20

CPC分类号： H01L33/40 ,  H01L33/30

摘要： The present invention relates to an epitaxial wafer including a PN junction, which is improved in terms of light output and can have a good-enough ohmic electrode formed thereon. Epitaxial layers are formed of GaAs.sub.1-x P.sub.x where 0.45

摘要翻译： 本发明涉及一种包括PN结的外延晶片，其在光输出方面得到改进，并且可以在其上形成足够大的欧姆电极。 外延层由GaAs1-xPx形成，其中0.45

公开(公告)号：US5660628A

公开(公告)日：1997-08-26

申请号：US291997

申请日：1994-08-18

申请人： Tadashige Sato ,  Hitora Takahashi

发明人： Tadashige Sato ,  Hitora Takahashi

IPC分类号： C30B25/02

CPC分类号： C30B25/02 ,  C30B29/40

摘要： There is provided a method for suppressing generation of cracks or damages on a compound semiconductor epitaxial wafer during an epitaxial growth due to growth of an epitaxial layer on the rear surface at the edge of the epitaxial layer which is located at the upstream side of the flow of the source gas. In manufacturing a semiconductor wafer by growing a single crystal semiconductor epitaxial layer having a zinc blend structure on a single crystal semiconductor substrate having a zinc blend structure, the surface of the single crystal semiconductor substrate has (100) surface orientation having an off angle and a source gas is supplied in the direction of the off angle or in a direction at 30.degree. or less to the direction at 180.degree. thereto.

摘要翻译： 提供了一种在外延生长期间抑制由于在位于流动的上游侧的外延层的边缘处的外表面上的外延层的生长而导致的外延生长期间的裂纹或损伤的产生的方法 的源气体。 在通过在具有锌掺杂结构的单晶半导体衬底上生长具有锌共混结构的单晶半导体外延层来制造半导体晶片的过程中，单晶半导体衬底的表面具有（100）表面取向具有偏角和 原料气体在偏离角度的方向或者在相对于180°的方向向30度以下的方向供给。

公开(公告)号：US4946801A

公开(公告)日：1990-08-07

申请号：US270275

申请日：1988-11-14

申请人： Tadashige Sato ,  Yasuji Kobashi

发明人： Tadashige Sato ,  Yasuji Kobashi

IPC分类号： F01N3/08 ,  F01N11/00 ,  H01L21/20 ,  H01L33/30

CPC分类号： H01L33/30 ,  F01N11/00 ,  F01N3/0842 ,  H01L33/0025 ,  H01L33/0062 ,  H01L33/0066 ,  F01N2550/03 ,  Y02T10/47 ,  Y10S438/936

摘要： In an epitaxial wafer comprising of a single crystalline substrate, a p type gallium aluminum arsenide mixed crystalline layer and n type gallium aluminum arsenide mixed crystalline layer having an indirect transition type band structure. The p type gallium aluminum arsenide mixed crystalline layer consists of a gallium aluminum arsenide mixed crystalline layer having a direct transition type band structure, positioned about 3 to 10 .mu.m from the pn junction and a gallium aluminum arsenide mixed crystalline layer having an indirect transition type band structure. The aluminum arsenide mixed crystal ratio in the gallium aluminum arsenide is exponentially and gradually changed in the region between the direct transition type layer and the indirect transition type layer.

公开(公告)号：US06218681B1

公开(公告)日：2001-04-17

申请号：US09220446

申请日：1998-12-24

申请人： Tadashige Sato

发明人： Tadashige Sato

IPC分类号： H01L2715

CPC分类号： H01L33/305

摘要： The present invention provides an epitaxial wafer having compound semiconductor epitaxial layer provided on a substrate, a total thickness of a portion of the compound semiconductor epitaxial layers comprises Ga, As and P as constituent elements being not less than 80 &mgr;m and in the epitaxial layer a low carrier concentration region with a carrier concentration of from 0.5 to 9×1015 cm−3 doped with nitrogen being formed.

摘要翻译： 本发明提供一种具有设置在基板上的化合物半导体外延层的外延晶片，化合物半导体外延层的一部分的总厚度包括Ga，As和P作为构成元素不小于80μm，并且在外延层a 形成了掺杂有氮的载流子浓度为0.5至9×10 15 cm -3的低载流子浓度区域。

公开(公告)号：US5751026A

公开(公告)日：1998-05-12

申请号：US801295

申请日：1997-02-18

申请人： Tadashige Sato ,  Megumi Imai ,  Tsuneteru Takahashi

发明人： Tadashige Sato ,  Megumi Imai ,  Tsuneteru Takahashi

IPC分类号： H01L21/20 ,  C30B25/02 ,  H01L33/00 ,  H01L33/30

CPC分类号： H01L33/30 ,  C30B25/02 ,  C30B29/40 ,  H01L33/0062 ,  H01L33/305

摘要： In an epitaxial wafer of gallium arsenide phosphide, a single crystal substrate is provided thereon with a gallium arsenide phosphide layer with a varying mixed crystal ratio, a gallium arsenide phosphide layer with a constant mixed crystal ratio, and a nitrogen-doped gallium arsenide phosphide layer with a constant mixed crystal ratio. The nitrogen-doped gallium arsenide phosphide layer with a constant mixed crystal ratio has a carrier concentration of 3.times.10.sup.15 cm.sup.-3 or less.

摘要翻译： 在砷化镓磷化物的外延晶片中，在其上提供具有变化的混晶比的砷化镓磷化物层的单晶衬底，具有恒定混晶比的砷化镓磷化物层和氮掺杂的砷化镓磷化物层 具有恒定的混晶比。 具有恒定混晶比的氮掺杂砷化镓磷化物层的载流子浓度为3×10 15 cm -3以下。

公开(公告)号：US5456765A

公开(公告)日：1995-10-10

申请号：US72577

申请日：1993-06-07

申请人： Tadashige Sato ,  Hisanori Fujita

发明人： Tadashige Sato ,  Hisanori Fujita

IPC分类号： H01L21/205 ,  C30B25/02 ,  H01L21/20 ,  H01L33/30 ,  H01L33/00

CPC分类号： H01L21/02609 ,  C30B25/02 ,  C30B29/44 ,  H01L21/02392 ,  H01L21/02461 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  Y10S148/097 ,  Y10S438/938

摘要： A mixed crystal ratio difference is introduced in a gallium arsenide phosphide mixed crystal layer having a desired constant mixed crystal ratio, thereby reducing the amount of stress remaining within the resulting epitaxial wafer. This is less likely or unlikely to crack, and so can be well used for LED fabrication.

摘要翻译： 在具有期望的恒定混晶比的砷化镓磷化物混合晶体层中引入混晶比，从而减少在所得外延晶片内剩余的应力量。 这不太可能或不太可能破裂，因此可以很好地用于LED制造。

公开(公告)号：US5103270A

公开(公告)日：1992-04-07

申请号：US441273

申请日：1989-11-27

申请人： Tadashige Sato ,  Toshio Ishiwatari ,  Hisanori Fujita

发明人： Tadashige Sato ,  Toshio Ishiwatari ,  Hisanori Fujita

IPC分类号： H01L21/205 ,  H01L21/208 ,  H01L33/30 ,  H01L33/34 ,  H01L33/56

CPC分类号： H01L33/30 ,  H01L33/0025 ,  H01L33/0062

摘要： A double hetero type epitaxial wafer contains a single crystal substrate, first and second conductivity type clad layers which are opposite and are made of mixed crystal compounds of Group III-V which had an indirect transition type band structure, and an active layer made of a mixed crystal compound of Group III-V which has a direct transition type band structure and is interposed between the respective clad layers, wherein the first conductivity type clad layer has a refractive index smaller than that of the second conductivity type clad layer.