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公开(公告)号：US08740336B2
公开(公告)日：2014-06-03
申请号：US13183604
申请日：2011-07-15
CPC分类号： B41J2/2107 , B41J2/2052 , B41J2/2056 , B41J2/2132
摘要： An ink jet printing apparatus and an ink jet printing method, whereby high-permeation ink and low-permeation ink are employed to prevent a reduction in optical density is provided. The ink jet printing apparatus controls ejection of ink from print heads, so that only low-permeation ink is ejected onto the edge area of a print medium that is adjacent to a non-printing area, and this time, high-permeation ink is not employed. Further, the ink jet printing apparatus controls ejection of ink from the print heads, so that both low-permeation ink and high-permeation ink are employed for the non-edge area that is adjacent to the edge area, and to perform printing, the low-permeation ink is ejected onto the non-edge area prior to the high-permeation ink.
摘要翻译： 提供了一种喷墨打印设备和喷墨印刷方法，其中采用了高渗透油墨和低渗透油墨以防止光密度的降低。 喷墨打印设备控制从打印头的墨水喷射，使得只有低渗透油墨喷射到与非打印区域相邻的打印介质的边缘区域上，并且此时高渗透油墨不是 雇用。 此外，喷墨打印装置控制来自打印头的墨的喷射，使得低渗透油墨和高渗透油墨都用于与边缘区域相邻的非边缘区域，并且进行打印， 低渗透油墨在高渗透油墨之前喷射到非边缘区域上。
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公开(公告)号：US20120019583A1
公开(公告)日：2012-01-26
申请号：US13183604
申请日：2011-07-15
IPC分类号： B41J2/205
CPC分类号： B41J2/2107 , B41J2/2052 , B41J2/2056 , B41J2/2132
摘要： An ink jet printing apparatus and an ink jet printing method, whereby high-permeation ink and low-permeation ink are employed to prevent a reduction in optical density is provided. The ink jet printing apparatus controls ejection of ink from print heads, so that only low-permeation ink is ejected onto the edge area of a print medium that is adjacent to a non-printing area, and this time, high-permeation ink is not employed. Further, the ink jet printing apparatus controls ejection of ink from the print heads, so that both low-permeation ink and high-permeation ink are employed for the non-edge area that is adjacent to the edge area, and to perform printing, the low-permeation ink is ejected onto the non-edge area prior to the high-permeation ink.
摘要翻译： 提供了一种喷墨打印设备和喷墨印刷方法，其中采用了高渗透油墨和低渗透油墨以防止光密度的降低。 喷墨打印设备控制从打印头的墨水喷射，使得只有低渗透油墨喷射到与非打印区域相邻的打印介质的边缘区域上，并且此时高渗透油墨不是 雇用。 此外，喷墨打印装置控制来自打印头的墨的喷射，使得低渗透油墨和高渗透油墨都用于与边缘区域相邻的非边缘区域，并且进行打印， 低渗透油墨在高渗透油墨之前喷射到非边缘区域上。
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3.发明申请SUBSTRATE COOLING DEVICE, SUBSTRATE COOLING METHOD AND HEAT TREATMENT APPARATUS 审中-公开基板冷却装置，基板冷却方法和热处理装置公开(公告)号：US20130062035A1
公开(公告)日：2013-03-14
申请号：US13597513
申请日：2012-08-29
申请人： Masato Kawakami , Hiromi Nitadori , Yun Mo
发明人： Masato Kawakami , Hiromi Nitadori , Yun Mo
CPC分类号： H01L21/67757 , H01L21/67109
摘要： A substrate cooling device includes a cylindrical heat shielding member 30 configured to be movable between an insertion position where the heat shielding member 30 is inserted between the substrate holding member 15 in a processing vessel 11 and a heating member 12 and an unloading position where the heat shielding member 30 is unloaded from the insertion position, and configured to block radiant heat toward the substrates W after completing a heat treatment; and an air cooling port 21 provided at an outside of the processing vessel 11. The heat shielding member 30 includes two half-cylindrical members 31 that are assembled and separated at the unloading position, and is movable between the unloading position and the insertion position. An outer surface and an inner surface of the heat shielding member 30 are made of materials having a relatively low emissivity and a relatively high emissivity, respectively.
摘要翻译： 基板冷却装置包括圆筒形的热屏蔽构件30，该圆筒形的热屏蔽构件30能够在热屏蔽构件30插入处理容器11中的基板保持构件15和加热构件12之间的插入位置与加热构件12的卸载位置之间移动 遮蔽构件30从插入位置卸载，并且构造成在完成热处理之后阻挡朝向基板W的辐射热; 以及设置在处理容器11的外侧的空气冷却端口21.隔热构件30包括在卸载位置组装和分离的两个半圆柱形构件31，并且可在卸载位置和插入位置之间移动。 隔热构件30的外表面和内表面分别由具有相对低的发射率和相对高的发射率的材料制成。
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公开(公告)号：US4039583A
公开(公告)日：1977-08-02
申请号：US636887
申请日：1975-12-02
申请人： Masato Kawakami , Naoki Andoh , Akira Iio
发明人： Masato Kawakami , Naoki Andoh , Akira Iio
IPC分类号： C07C45/00 , B01J23/00 , B01J23/887 , C07B61/00 , C07C5/48 , C07C45/35 , C07C47/22 , C07C67/00 , C07C45/04 , C07C5/00
CPC分类号： C07C5/48 , B01J23/8876 , C07C45/35 , B01J2523/00
摘要： In a process for producing methacrolein by the gas phase catalytic reaction of isobutene with molecular oxygen in the presence of a catalyst consisting of Mo, Bi, Fe, Co, Sb and O, the catalyst is prepared by using as the Sb component, a mixture of a trivalent Sb compound and a pentavalent Sb compound. When said catalyst is used, the reaction can be continued over a long period of time without formation of complete oxidation products, i.e. CO and CO.sub.2, and, even when the starting isobutene contains n-butene, the reaction proceeds smoothly to make it possible to produce methacrolein and 1,3-butadiene simultaneously.
摘要翻译： 在由Mo，Bi，Fe，Co，Sb和O组成的催化剂存在下，通过异丁烯与分子氧的气相催化反应制备异丁烯醛的方法，通过使用Sb组分，混合物 的三价Sb化合物和五价Sb化合物。 当使用所述催化剂时，反应可以长时间持续，而不会形成完全氧化产物，即CO和CO 2，即使起始异丁烯含有正丁烯，反应也能顺利进行， 同时产生甲基丙烯醛和1,3-丁二烯。
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公开(公告)号：US07651733B2
公开(公告)日：2010-01-26
申请号：US11407354
申请日：2006-04-20
IPC分类号： C23C16/00
CPC分类号： C23C16/455 , C23C16/45578 , C23C16/4583 , C30B35/00
摘要： A vapor-phase growing unit of this invention includes: a reaction container in which a substrate is arranged, a first gas-introducing part having a first gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the first gas-introducing part serving to supply into the reaction container a first gas consisting of an organic-metal including gas, and a second gas-introducing part having a second gas-introducing tube in which a gas-spouting port opening in the reaction container is formed, the second gas-introducing part serving to supply into the reaction container a second gas which reacts with the organic-metal including gas and whose density is smaller than that of the organic-metal including gas. The gas-spouting port of the first gas-introducing tube and the gas-spouting port of the second gas-introducing tube are arranged along an outside periphery of the substrate arranged in the reaction container.
摘要翻译： 本发明的气相生长单元包括：配置有基板的反应容器，具有第一气体导入管的第一气体导入部，在该第一气体导入管中形成有在反应容器内开口的气体喷出口， 用于向反应容器供给包含气体的有机金属构成的第一气体的第一气体导入部和具有第二气体导入管的第二气体导入部，在第二气体导入部中，在反应容器内开口的气体吐出口 形成第二气体导入部，其用于向反应容器供给与包含有机金属的气体反应的第二气体，其密度小于包含有机金属的气体的密度。 第一气体导入管的气体喷出口和第二气体导入管的气体喷出口沿配置在反应容器内的基板的外周配置。
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公开(公告)号：US4036901A
公开(公告)日：1977-07-19
申请号：US625380
申请日：1975-10-24
申请人： Masato Kawakami , Naoki Andoh , Akira Iio , Haruo Yamanouchi
发明人： Masato Kawakami , Naoki Andoh , Akira Iio , Haruo Yamanouchi
IPC分类号： C07C5/367 , B01J23/00 , B01J23/31 , B01J23/887 , C07B61/00 , C07C1/00 , C07C5/48 , C07C15/46 , C07C67/00 , C07C15/00 , C07C15/10
CPC分类号： B01J23/8876 , B01J23/31 , C07C5/48
摘要： A process for producing styrene which comprises subjecting 4-vinylcyclohexene to gas phase catalytic oxidation with a molecular oxygen-containing gas, for example, air, characterized in that the oxidation is carried out by use of a catalyst composition represented by the general formula,Mo.sub.12 Bi.sub.0.1.sub.-10 Fe.sub.0.sub.-15 Co.sub.0.sub.-15 Pb.sub.0.sub.-15 X.sub.0.sub.-10 Y.sub.0.sub.-3 O.sub.nwherein X is at least one element selected from the group consisting of zirconium, cadmium, niobium, and antimony; Y is at least one element selected from the group consisting of lithium, sodium, potassium, rubidium, cesium and thallium; 1.ltoreq.Fe + Co + Pb.ltoreq.25; and n is the number of oxygen atoms sufficient to replenish the valences of other elements. According to the above-mentioned process, styrene can be produced in a high yield.
摘要翻译： 一种生产苯乙烯的方法，其包括用含有分子氧的气体例如空气对4-乙烯基环己烯进行气相催化氧化，其特征在于，使用由通式Mo12Bi0表示的催化剂组合物进行氧化 .1-10Fe0-15Co0-15Pb0-15X0-10Y0-3On其中X是选自锆，镉，铌和锑中的至少一种元素; Y是选自锂，钠，钾，铷，铯和铊中的至少一种元素; 1 25; 并且n是足以补充其它元素的化合价的氧原子数。 根据上述方法，可以高产率生产苯乙烯。
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公开(公告)号：US20100267243A1
公开(公告)日：2010-10-21
申请号：US12680653
申请日：2008-09-01
申请人： Masato Kawakami , Sumie Nagaseki , Toru Ito
发明人： Masato Kawakami , Sumie Nagaseki , Toru Ito
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116 , H01J37/32091 , H01J37/3244 , H01J37/32449
摘要： In the plasma processing by an electrically negative gas, the in-plane uniformity of plasma processing is enhanced compared to the conventional case by controlling the ion density in the plasma. Not only is a processing gas being an electrically negative gas introduced from a processing gas source 170 into a processing chamber 102 but also an electrically negative gas having electron attachment coefficient greater than that of the processing gas is introduced as an additional gas from an additional gas source 180 to thereby form a plasma. In the plasma formation, the ion density in the plasma is controlled by regulating the flow rate of the additional gas relative to that of the processing gas.
摘要翻译： 在通过电负气体的等离子体处理中，通过控制等离子体中的离子密度，与常规情况相比，等离子体处理的面内均匀性增强。 处理气体不仅是从处理气体源170引入处理室102的电负气体，而且还引入具有大于加工气体的电子附着系数的电负气体作为来自附加气体的附加气体 源180，从而形成等离子体。 在等离子体形成中，通过调节附加气体相对于处理气体的流量来控制等离子体中的离子密度。
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公开(公告)号：US20080001983A1
公开(公告)日：2008-01-03
申请号：US11768904
申请日：2007-06-26
申请人： Masato Kawakami , Hiromi Mochizuki
发明人： Masato Kawakami , Hiromi Mochizuki
CPC分类号： B41J2/2114 , B41J11/0015 , B41J11/007 , B41J29/38
摘要： An image-forming apparatus is provided for formation of a high-quality image without irregularity in the image density independently of the infiltration time of the pretreatment liquid or the delivery speed of the plain paper sheet for the printing. The interval between a pretreatment liquid applicator 30 and printing heads 21-24 is adjusted by a stepping motor 98 driven by a stepping motor control circuit 34 based on the delivery speed data read by a memory controller 68. Thereby an endless belt 90 is allowed to circulate in the direction of the arrow-C or arrow-D. This circulation movement of the endless belt displaces the applicator holder 82 or the pretreatment liquid applicator 30 at an intended distance in the arrow-A direction or the reverse direction along the guide rail 86,88.
摘要翻译： 提供了一种图像形成装置，用于形成高质量图像，而不管预处理液体的渗透时间或印刷用普通纸的输送速度，图像浓度都不会发生不均匀。 基于由存储器控制器68读取的传送速度数据，通过由步进电动机控制电路34驱动的步进电机98调节预处理液体涂布器30与打印头21-24之间的间隔。 由此，循环带90能够沿箭头C或箭头D的方向循环。 环形带的这种循环运动使涂抹器保持器82或预处理液体施加器30沿着导轨86,88在箭头A方向或相反方向上移动预期距离。
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公开(公告)号：US20110201208A1
公开(公告)日：2011-08-18
申请号：US13125141
申请日：2009-10-19
申请人： Masato Kawakami , Sumie Nagaseki
发明人： Masato Kawakami , Sumie Nagaseki
IPC分类号： H01L21/3065
CPC分类号： H01L21/31116
摘要： According to one embodiment, a process gas containing a fluorocarbon-based gas being an etch gas having a deposition property and SF6 gas as an additional gas are introduced into a process chamber, a plasma is generated in the process chamber, and an etching is performed on a silicon-containing oxide film formed on a substrate by using a resist pattern as a mask through the plasma. At this time, based on a relationship between an etch rate and a resist selectivity that is changed with respect to a change in a flow rate of the additional gas, the flow rate of the additional gas is set to a range of the flow rate in which changes in the etch rate and the resist selectivity accompanying an increase in the flow rate of the additional gas tend to increase.
摘要翻译： 根据一个实施方案，将含有作为附着气体的具有沉积性质的蚀刻气体的碳氟化合物气体和作为附加气体的SF 6气体的工艺气体引入到处理室中，在处理室中产生等离子体，并进行蚀刻 在通过等离子体使用抗蚀剂图案作为掩模的基板上形成的含硅氧化膜上。 此时，基于相对于附加气体的流量变化而变化的蚀刻速度和抗蚀剂选择性之间的关系，将附加气体的流量设定为 随着附加气体的流速的增加，蚀刻速率和抗蚀剂选择性的变化趋于增加。
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公开(公告)号：US20090269494A1
公开(公告)日：2009-10-29
申请号：US11910508
申请日：2006-04-03
CPC分类号： C23C16/401 , C23C16/45512 , G11B5/85 , G11B7/266 , H01L21/02148 , H01L21/02214 , H01L21/02271 , H01L21/31604
摘要： A film forming apparatus comprises a processing chamber for holding therein a to-be-processed substrate, a first gas supplying means for supplying into the processing chamber a first vapor source including a metal alkoxide having a tertiary butoxyl group as a ligand, and a second gas supplying means for supplying into the processing chamber a second vapor source including a silicon alkoxide source, wherein the first gas supplying means and the second gas supplying means are connected to a pre-reaction means for causing pre-reactions of the first vapor source and the second vapor source, and the film forming apparatus is configured to supply the first vapor source and the second vapor source after the pre-reactions into the processing chamber.
摘要翻译： 一种成膜设备包括一个用于在其中容纳待处理衬底的处理室，一个第一气体供应装置，用于向处理室供应包括具有叔丁氧基作为配体的金属醇盐的第一蒸气源， 用于向所述处理室供给包括硅醇盐源的第二蒸气源的气体供给装置，其中所述第一气体供给装置和所述第二气体供给装置连接到预反应装置，用于引起所述第一蒸气源和 第二蒸气源和成膜装置构成为将预反应后的第一蒸气源和第二蒸气源供给到处理室。
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