-
公开(公告)号：US4713585A
公开(公告)日：1987-12-15
申请号：US911790
申请日：1986-09-26
摘要： An ion source for producing an ion beam utilized for fabrication and processing of semiconductors, thin films or the like includes a plasma producing chamber equipped with first magnetic means for limiting a plasma region and a plasma expansion chamber provided in combination with the plasma producing chamber on the side where a beam extracting electrode is disposed. The plasma expansion chamber is provided with second magnet array for confining and holding a plasma region therein which is of a larger area than that of the plasma region formed in the plasma producing chamber.
摘要翻译： 用于制造用于半导体，薄膜等的制造和加工的离子束的离子源包括：等离子体产生室，其配备有用于限制等离子体区域的第一磁性装置和与等离子体产生室组合设置的等离子体膨胀室 设置光束提取电极的一侧。 等离子体膨胀室设置有第二磁体阵列，用于限制和保持其中等离子体区域的面积大于等离子体产生室中形成的等离子体区域的面积。
-
公开(公告)号：US5133825A
公开(公告)日：1992-07-28
申请号：US178613
申请日：1988-04-07
申请人： Yoshimi Hakamata , Ken-ichi Natsui , Yukio Kurosawa , Tadashi Sato , Hiroaki Kojima , Yasunori Ohno , Tomoe Kurosawa
发明人： Yoshimi Hakamata , Ken-ichi Natsui , Yukio Kurosawa , Tadashi Sato , Hiroaki Kojima , Yasunori Ohno , Tomoe Kurosawa
IPC分类号： H01J37/32
CPC分类号： H01J37/32357
摘要： An apparatus for generating plasma by making use of electron cyclotron resonance employs permanent magnets for forming magnetic fields, and the permanent magnets are arranged in such a manner as to form stronger magnetic fields in peripheral portion of a plasma chamber than in a central portion of the same. in addition, a cross-sectional area of the plasma chamber is gradually increased. Furthermore, electrons are introduced into an additional plasma chamber in which an electric field is not applied so as to generate low-temperature plasma.
-
公开(公告)号：US4847476A
公开(公告)日：1989-07-11
申请号：US942635
申请日：1986-12-17
申请人： Tadashi Sato , Yasunori Ohno , Tomoe Kurosawa , Nobuya Sekimoto , Yoshimi Hakamata , Yukio Kurosawa , Kunio Hirasawa
发明人： Tadashi Sato , Yasunori Ohno , Tomoe Kurosawa , Nobuya Sekimoto , Yoshimi Hakamata , Yukio Kurosawa , Kunio Hirasawa
IPC分类号： H01L21/265 , H01J27/08 , H01J27/14
CPC分类号： H01J27/14
摘要： An ion source device comprises a plasma generating vessel for generating plasma therein, a plurality of magnets arranged on an outer periphery of the plasma generating vessel to establish a cusp field in the plasma generating vessel, means for supplying a power to generate the plasma in the plasma generating vessel, and an anode electrode arranged on an inner wall of the plasma generating vessel and adapted to be heated by electrons emitted from the plasma and maintain the heat.
摘要翻译： 离子源装置包括用于在其中产生等离子体的等离子体发生容器，布置在等离子体发生容器的外周上的多个磁体，以在等离子体发生容器中建立尖端场，用于在等离子体发生容器中提供电力以产生等离子体的装置 等离子体发生容器和布置在等离子体发生容器的内壁上并适于被从等离子体发射的电子加热并保持热量的阳极电极。
-
公开(公告)号：US4739169A
公开(公告)日：1988-04-19
申请号：US914196
申请日：1986-10-01
摘要： An ion beam for use in fabrication and processing of semiconductors, thin films or the like. For making uniform the radial distribution of an ion beam extracted from the ion source, a plasma chamber is formed by extending a plasma producing chamber in the direction in which microwave energy is introduced. The plasma chamber thus formed is provided with second magnetic means for generating a magnetic field of multicusp geometry.
摘要翻译： 用于制造和加工半导体，薄膜等的离子束。 为了使从离子源提取的离子束的径向分布均匀，通过在引入微波能量的方向上延伸等离子体产生室来形成等离子体室。 如此形成的等离子体室设置有用于产生多重几何形状的磁场的第二磁性装置。
-
公开(公告)号：US4716491A
公开(公告)日：1987-12-29
申请号：US806341
申请日：1985-12-09
申请人： Yasunori Ohno , Tomoe Kurosawa , Tadashi Sato , Youichi Ohshita
发明人： Yasunori Ohno , Tomoe Kurosawa , Tadashi Sato , Youichi Ohshita
CPC分类号： H01J37/321 , H01J37/32623 , H01J37/32688 , H05H1/11
摘要： In a high frequency plasma generation apparatus used in a reactive ion etching apparatus, an ion shower apparatus, a sputter apparatus, etc. for fabricating thin films or semiconductor devices for which a fine patterning process is required, electrical breakdown is apt to be provoked at the surface of a high frequency coil, because the high frequency coil is usually inserted in a plasma. In order to remove this drawback, according to this invention, the high frequency coil is disposed in the plasma production chamber at the neighborhood of the cylindrical side wall, and thus a plasma confinement domain is formed inside of this high frequency coil by use of a magnetic field production device which generates a multi-cusp magnetic field so that the plasma confinement domain is separated from the high frequency coil. In this way, electrical breakdown on the surface of the high frequency coil is prevented and thus the apparatus according to this invention can work stably for a long time.
摘要翻译： 在用于反应离子蚀刻装置的高频等离子体发生装置中，用于制造需要精细图案化工艺的薄膜或半导体装置的离子淋浴装置，溅射装置等，易于在 高频线圈的表面，因为高频线圈通常插入等离子体中。 为了消除这个缺陷，根据本发明，高频线圈设置在等离子体生产室中，在圆筒形侧壁附近，因此通过使用高频线圈形成等离子体约束区域 磁场产生装置，其产生多尖点磁场，使得等离子体约束区域与高频线圈分离。 以这种方式，可以防止高频线圈表面的电击穿，从而本发明的装置可以长时间稳定工作。
-
公开(公告)号：US5085755A
公开(公告)日：1992-02-04
申请号：US450461
申请日：1989-12-14
申请人： Eiji Setoyama , Mitsuhiro Kamei , Yasunori Ohno
发明人： Eiji Setoyama , Mitsuhiro Kamei , Yasunori Ohno
CPC分类号： H01J37/3402 , C23C14/35
摘要： An apparatus for forming a thin film of a given material on one or more substrates comprises a vacuum vessel, a first electrode which is provided in the vacuum vessel for holding a target plate of the given material thereon, a second electrode which is provided opposite to the first electrode in the vacuum vessel to form a discharge space between the first and second electrodes and holds the substrate(s) thereon, a gas conduit for supplying a sputtering gas into the discharge space, power sources for applying a discharge voltage between the first and second electrodes to generate a discharge plasma of the sputtering gas, and a magnetic field generating device which is provided to surround the discharge space and generates a magnetic field effective to prevent the discharge plasma from diffusing to the outside of the discharge space.
摘要翻译： 用于在一个或多个基底上形成给定材料的薄膜的装置包括真空容器，设置在真空容器中用于保持给定材料的靶板的第一电极，与第一电极相对设置的第二电极 所述真空容器中的第一电极在所述第一和第二电极之间形成放电空间并保持其上的衬底，用于将溅射气体供应到放电空间中的气体导管，用于在第一和第二电极之间施加放电电压的电源 以及用于产生溅射气体的放电等离子体的第二电极，以及设置成围绕放电空间产生有效地防止放电等离子体扩散到放电空间外部的磁场的磁场产生装置。
-
公开(公告)号：US5064520A
公开(公告)日：1991-11-12
申请号：US480131
申请日：1990-02-14
申请人： Kiyoshi Miyake , Yasunori Ohno , Masato Isogai , Yukio Nakagawa , Takayoshi Seki , Koukichi Ouhata , Kenichi Natsui , Terunori Warabisako , Keiji Arimatsu
发明人： Kiyoshi Miyake , Yasunori Ohno , Masato Isogai , Yukio Nakagawa , Takayoshi Seki , Koukichi Ouhata , Kenichi Natsui , Terunori Warabisako , Keiji Arimatsu
CPC分类号： C23C14/3414 , C23C14/12 , C23C14/3407
摘要： This invention relates to a method and an apparatus for forming a film, which are suitable for forming a film of a semiconductor, dielectric, metal, insulator, or organic substance. In order to form a film of high purity and quality at high speed, a particle beam such as an ion beam, an electron beam, or a plasma is applied to a sputtering target comprising a substance formed by bonding atoms or molecules with either van der Waals forces or hydrogen bonding forces, the particles are sputtered thereby from the target, fly in the space in the vacuum chamber, reach the substrate on which they are deposited to form a desired film. To form an organic film free of pinholes, impurities, or disorder in the molecular composition and arrangement in a large area at high speed, a particle beam of about 10 eV or less is applied to the target comprising an organic compound disposed in a vacuum, the particle beam having a level of energy as high as can break the molecular crystalline bonds and not high enough to break the nonmolecular crystalline bonds, out of the molecular crystalline bonds by van der Waals forces connecting the atoms constituting the organic compound and the nonmolecular crystalline bonds by covalent bonds, for example, other than van der Waals forces, and the sputtered particles from the target are deposited on the substrate facing the target to form a desired film of an organic compound.
-
公开(公告)号：US5266146A
公开(公告)日：1993-11-30
申请号：US763206
申请日：1991-09-20
申请人： Yasunori Ohno , Takashi Iga , Noriyuki Sakudo , Kenichi Natsui , Isao Hashimoto
发明人： Yasunori Ohno , Takashi Iga , Noriyuki Sakudo , Kenichi Natsui , Isao Hashimoto
CPC分类号： H01J37/32623 , H01J37/32357 , H01J37/3266
摘要： A plasma-generating apparatus has a plasma discharge chamber having a plasma-generation region. Microwave energy is applied, while introducing plasma-forming gas, and a magnetic field is applied to the plasma-generation region by an electromagnetic coil extending around the chamber. To enhance the field in the plasma-generation region while reducing it outside said region, and a permanent magnet arrangement is at least partly located radially within the coil so as to provide a unidirectional magnetic field which extends through the whole of the plasma-generation region as seen in radial cross-section and is oriented in the axial direction of the coil.
-
-
-
-
-
-
-
搜索结果
8 条记录 (耗时 0.021 秒)
