公开(公告)号：US4882612A

公开(公告)日：1989-11-21

申请号：US45468

申请日：1987-05-04

申请人： Yasunori Usui ,  Hiroshi Okamura ,  Yoshinari Uetake ,  Takashi Fujiwara

发明人： Yasunori Usui ,  Hiroshi Okamura ,  Yoshinari Uetake ,  Takashi Fujiwara

IPC分类号： H01L21/52 ,  H01L23/48 ,  H01L29/74 ,  H01L29/744 ,  H05K3/32 ,  H05K3/34

CPC分类号： H01L24/72 ,  H01L2924/01005 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1301 ,  H05K3/325 ,  H05K3/3457

摘要： In a power semiconductor device according to the present invention, a sheet, formed of a soft metal such as Ag, is provided on that portion of a pressing control electrode which is brought into contact with an Al gate electrode of a pellet. By means of this sheet, it is possible both to apply a strong pressing power to the Al gate electrode and to reduce the contact resistance between the two electrode. Since an excessive amount of heat is not produced on account of the contact resistance, the semiconductor device can be protected against being damaged.

摘要翻译： 在根据本发明的功率半导体器件中，在与颗粒的Al栅极电极接触的压制控制电极的该部分上设置由诸如Ag的软金属形成的片材。 通过该片材，可以向Al栅极施加强大的按压力并且降低两个电极之间的接触电阻。 由于由于接触电阻而不产生过量的热量，因此可以保护半导体器件免受损坏。

公开(公告)号：US4717947A

公开(公告)日：1988-01-05

申请号：US675150

申请日：1984-11-27

申请人： Hideo Matsuda ,  Yoshiaki Tsunoda ,  Takashi Fujiwara ,  Yasunori Usui

发明人： Hideo Matsuda ,  Yoshiaki Tsunoda ,  Takashi Fujiwara ,  Yasunori Usui

IPC分类号： H01L31/10 ,  H01L29/74 ,  H01L29/744 ,  H01L29/745 ,  H01L29/749 ,  H01L31/111 ,  H01L27/02 ,  H01L27/14 ,  H01L29/78

CPC分类号： H01L31/1113 ,  H01L29/74 ,  H01L29/7455

摘要： A semiconductor device has a main GTO thyristor section, an auxiliary GTO thyristor section and a MOS transistor section. The main GTO thyristor section is turned on and off in accordance with a gate signal supplied to its gate terminal. The auxiliary GTO thyristor section supplies an igniting signal to the gate of the main GTO thyristor in accordance with an optical signal. The MOS transistor supplies an extinguishing signal to the gate of the main GTO thyristor section in accordance with an optical signal supplied to it.

摘要翻译： 半导体器件具有主GTO晶闸管部分，辅助GTO晶闸管部分和MOS晶体管部分。 主GTO晶闸管部分根据提供给其栅极端子的栅极信号而导通和截止。 辅助GTO晶闸管部分根据光信号向主GTO晶闸管的栅极提供点火信号。 MOS晶体管根据提供给其的光信号向主GTO晶闸管部分的栅极提供熄灭信号。

公开(公告)号：US07537983B2

公开(公告)日：2009-05-26

申请号：US11344178

申请日：2006-02-01

申请人： Takeshi Uchihara ,  Yasunori Usui ,  Akira Tanioka ,  Takuma Hara

发明人： Takeshi Uchihara ,  Yasunori Usui ,  Akira Tanioka ,  Takuma Hara

IPC分类号： H01L21/84 ,  H01L21/8234

CPC分类号： H01L29/7835 ,  H01L29/0657 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/66659 ,  H01L29/7836 ,  H01L29/78624

摘要： In various aspects, a MOSFET may include an active region of a first conductivity type provided on an insulating layer, the active region having a first portion and a second portion, the first portion being thicker than the second portion; a base region of the first conductivity type provided on the insulating layer, the base region having a higher impurity concentration than the first portion of the active region, the base region being in contact with the first portion of the active region and the insulating layer; a drain region of a second conductivity type provided on the insulating layer, the drain region being in contact with the second portion of the active region and the insulating layer, the drain region being spaced from the base region; a source region of the second conductivity type provided on a surface of the base region; a gate insulating layer provided on the source region, the base region, the active region and the drain region; and a gate electrode provided on the gate insulating layer.

摘要翻译： 在各个方面，MOSFET可以包括提供在绝缘层上的第一导电类型的有源区，该有源区具有第一部分和第二部分，第一部分比第二部分厚; 所述第一导电类型的基极区域设置在所述绝缘层上，所述基极区域具有比所述有源区域的第一部分高的杂质浓度，所述基极区域与所述有源区域的第一部分和所述绝缘层接触; 设置在所述绝缘层上的第二导电类型的漏极区域，所述漏极区域与所述有源区域的第二部分和所述绝缘层接触，所述漏极区域与所述基极区域间隔开; 设置在所述基底区域的表面上的所述第二导电类型的源极区域; 设置在源极区域，基极区域，有源区域和漏极区域上的栅极绝缘层; 以及设置在栅极绝缘层上的栅电极。

公开(公告)号：US5336907A

公开(公告)日：1994-08-09

申请号：US969491

申请日：1992-10-30

申请人： Hidetoshi Nakanishi ,  Yasunori Usui

发明人： Hidetoshi Nakanishi ,  Yasunori Usui

IPC分类号： H01L29/745 ,  H01L29/749 ,  H01L29/74 ,  H01L29/10 ,  H01L29/78

CPC分类号： H01L29/749 ,  H01L29/7455

摘要： A gate electrode includes a first region formed in an OFF gate region and a second region formed in an ON gate region. A P-channel region is formed in the OFF gate region and an N-channel region is formed in the ON gate region to separate these gate regions. Since a P.sup.- -type channel region of low impurity concentration is formed at an end of a P-type base region in which the N-channel region is formed, the impurity concentration of the P-type base region can be increased and thus turn-off characteristic is improved.

摘要翻译： 栅极电极包括形成在OFF栅极区域中的第一区域和形成在ON栅极区域中的第二区域。 在OFF栅极区域中形成P沟道区，并且在导通栅极区域中形成N沟道区以分离这些栅极区。 由于在形成有N沟道区的P型基极区的端部形成有低杂质浓度的P型沟道区，因此能够提高P型基极区域的杂质浓度， 改进了特性。

公开(公告)号：US20120165081A1

公开(公告)日：2012-06-28

申请号：US13331226

申请日：2011-12-20

申请人： Youichi USHIGOME ,  Satoshi Ogasawara ,  Hiromasu Meguro ,  Yasunori Usui

发明人： Youichi USHIGOME ,  Satoshi Ogasawara ,  Hiromasu Meguro ,  Yasunori Usui

IPC分类号： H04M1/00

CPC分类号： H04M1/0252 ,  G06F1/1656 ,  H04M1/0249

摘要： A mobile device of the present invention having an upper case, a lower case arranged under the upper case, and a middle case arranged inside the upper case and the lower case, includes a first engaging section which is provided in the peripheral edge portion of the undersurface of the upper case, a second engaging section which is provided in the peripheral edge portion of the top surface of the middle case and engages with the first engaging section, a third engaging section which is provided in the peripheral edge portion of the undersurface of the middle case, and a fourth engaging section which is provided in the peripheral edge portion of the top surface of the lower case and engages with the third engaging section.

摘要翻译： 本发明的移动装置具有设置在上壳体和下壳体内的上壳体，下壳体和设置在上壳体内的中间壳体的移动装置，包括：第一接合部，其设置在上壳体的周缘部 上壳体的下表面，设置在中间壳体的上表面的周缘部分中并与第一接合部分接合的第二接合部分，第三接合部分设置在第二接合部分的下表面的周边部分中 中间壳体和第四接合部分，其设置在下壳体的顶表面的周缘部分中并与第三接合部分接合。

公开(公告)号：US5543639A

公开(公告)日：1996-08-06

申请号：US138434

申请日：1993-10-08

申请人： Hidetoshi Nakanishi ,  Yasunori Usui ,  Shigenori Yakushiji

发明人： Hidetoshi Nakanishi ,  Yasunori Usui ,  Shigenori Yakushiji

IPC分类号： H01L29/74 ,  H01L29/745 ,  H01L29/749 ,  H01L31/111

CPC分类号： H01L29/7455 ,  H01L29/749

摘要： On one major surface of an n.sup.- -type semiconductor substrate, a p-type base region is formed in a semiconductor substrate, and an n-type emitter region is formed in the p-type base region. A p-type source region is formed near the p-type base region. A cathode electrode has a so-called shorted emitter structure in which the cathode electrode is connected to the p-type source region, the p-type base region, and the n-type emitter region. The p-type source region preferably has a pattern adjacent the p-type base region. The p-type base region is preferably constituted by a plurality of diffusion layers which are electrically connected to each other. Therefore, turn-off characteristics of a device can be improved, and turn-on characteristics are improved without degrading the turn-off characteristics, thereby improving trade-off between the turn-on characteristics and the turn-off characteristics.

摘要翻译： 在n型半导体衬底的一个主表面上，在半导体衬底中形成p型基极区域，在p型基极区域形成n型发射极区域。 在p型基极区附近形成p型源区。 阴极具有所谓的短路发射极结构，其中阴极连接到p型源极区，p型基极区和n型发射极区。 p型源区优选具有与p型基极区相邻的图案。 p型基区优选由彼此电连接的多个扩散层构成。 因此，可以提高器件的关断特性，并且在不降低关断特性的情况下提高导通特性，从而改善导通特性与关断特性之间的折衷。

公开(公告)号：US4918514A

公开(公告)日：1990-04-17

申请号：US173458

申请日：1988-03-25

申请人： Hideo Matsuda ,  Yasunori Usui ,  Shinjiro Kojima ,  Masaru Ando

发明人： Hideo Matsuda ,  Yasunori Usui ,  Shinjiro Kojima ,  Masaru Ando

IPC分类号： H01L21/52 ,  H01L23/051 ,  H01L23/48

CPC分类号： H01L23/051 ,  H01L24/72 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/1301

摘要： A soft metal plate having substantially equal hardness as emitter electrodes formed of soft metal is disposed between the emitter electrodes and a heat buffer metal plate formed of hard metal, and pressure applied to the emitter electrodes is shared by the soft metal plate, so as to reduce the thermal fatigue of the emitter electrodes.

公开(公告)号：US07224022B2

公开(公告)日：2007-05-29

申请号：US10804018

申请日：2004-03-19

申请人： Keinichi Tokano ,  Yoshihiko Saito ,  Shigeo Kouzuki ,  Yasunori Usui ,  Masaru Izumisawa ,  Takahiro Kawano

发明人： Keinichi Tokano ,  Yoshihiko Saito ,  Shigeo Kouzuki ,  Yasunori Usui ,  Masaru Izumisawa ,  Takahiro Kawano

IPC分类号： H01L29/00

CPC分类号： H01L29/7811 ,  H01L21/26586 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/66712 ,  H01L29/7802

摘要： As and B are implanted to side surfaces of trenches 3 by a rotation ion implanting method, and by using a difference between these impurities in diffusion coefficient, the structure in which an n−-type epitaxial Si layer is interposed between trenches 3 is converted into a semiconductor structure consisting of n-type pillar layer 5/p-type pillar layer 4/n-type pillar layer 5 lining up. The structure can function substantially the same role as that of a super junction structure.

摘要翻译： 通过旋转离子注入法将As和B注入到沟槽3的侧表面，通过使用扩散系数中的这些杂质之间的差异，其中n + O - 型外延Si层的结构为 插入在沟槽3之间的半导体结构被转换为由n型支柱层5 / p型支柱层4 / n型支柱层5组成的半导体结构。 该结构可以起到与超级结结构基本上相同的作用。

公开(公告)号：US20060197112A1

公开(公告)日：2006-09-07

申请号：US11275020

申请日：2005-12-02

申请人： Takeshi Uchihara ,  Yasunori Usui ,  Takashi Nishimura

发明人： Takeshi Uchihara ,  Yasunori Usui ,  Takashi Nishimura

IPC分类号： H01L29/76

CPC分类号： H01L31/12 ,  H03K17/78 ,  H03K17/785

摘要： In various aspects, an optical coupling device may include a light emitting element configured to emit an optical signal; a photo receiving element having a serial connected of photo diodes, the photo receiving element configured to receive the optical signal and generate an electrical signal; and a control circuit having an active element, a source and a drain of the active element connected to both ends of the photo receiving element; wherein the breakdown voltage of the control circuit is no more than an open circuit voltage of the photo receiving element.

摘要翻译： 在各个方面，光耦合装置可以包括被配置为发射光信号的发光元件; 光接收元件，其具有光电二极管的串联连接，所述光接收元件被配置为接收所述光信号并产生电信号; 以及控制电路，其具有有源元件，所述有源元件的源极和漏极连接到所述光接收元件的两端; 其中所述控制电路的击穿电压不超过所述光接收元件的开路电压。

公开(公告)号：US20060170041A1

公开(公告)日：2006-08-03

申请号：US11335602

申请日：2006-01-20

申请人： Takeshi Uchihara ,  Yasunori Usui ,  Hideyuki Ura

发明人： Takeshi Uchihara ,  Yasunori Usui ,  Hideyuki Ura

IPC分类号： H01L29/76

CPC分类号： H01L29/7838 ,  H01L29/417 ,  H03K17/941

摘要： In various aspects, a MOSFET may include a semiconductor region of a first conductivity type; a first semiconductor region of a second conductivity type provided in the semiconductor region; a second semiconductor region of the first conductivity type provided in the semiconductor region, the second semiconductor region having a higher impurity concentration than the semiconductor region; a third semiconductor region of the second conductivity type provided on the second semiconductor region; a fourth semiconductor region of the second conductivity type configured to be contact with the first semiconductor region and the third semiconductor region, the fourth semiconductor region having a lower impurity concentration than the first semiconductor region and the third semiconductor region; a gate electrode provided on the fourth semiconductor region via a gate insulating layer, an edge of the gate electrode spaced from a junction between the first semiconductor region and the fourth semiconductor region.

摘要翻译： 在各个方面，MOSFET可以包括第一导电类型的半导体区域; 设置在半导体区域中的第二导电类型的第一半导体区域; 设置在所述半导体区域中的所述第一导电类型的第二半导体区域，所述第二半导体区域具有比所述半导体区域更高的杂质浓度; 设置在第二半导体区域上的第二导电类型的第三半导体区域; 第二导电类型的第四半导体区域被配置为与第一半导体区域和第三半导体区域接触，第四半导体区域具有比第一半导体区域和第三半导体区域低的杂质浓度; 栅极，经由栅极绝缘层设置在第四半导体区域上，栅电极的边缘与第一半导体区域和第四半导体区域之间的接合部分间隔开。