摘要:
An object of the present invention is to provide a method for producing a dielectric film excellent in the deposition stability in forming a high-density dielectric film by an electrophoresis method using a dielectric particle-dispersed slurry in which dielectric particles are dispersed. In order to achieve the object, a method for producing a dielectric film using an electrophoresis method comprising arranging a cathode electrode and an anode electrode in a dielectric particle-dispersed slurry in which the dielectric particles are dispersed and carrying out electrolysis to form a dielectric film on one of the electrodes, wherein the dielectric particles contained in the dielectric particle-dispersed slurry are the calcined dielectric particles.
摘要:
The object of the present invention is to provide a metal layer with an insulating layer which is uniform and thin and can be produced in low cost. To achieve the object, a laminate composed of a ceramic insulating layer and a metal layer characterized in that the ceramic insulating layer has a binder provided among ceramic particles constituting a ceramic particle film formed by electrophoretic deposition of the ceramic particles is employed. The laminate can be suitably used as a base material for production of various types of electronic devices, the circuit formation of printed wiring boards, semiconductor circuits and circuits including semiconductor circuits, and capacitors utilizing dielectric performance of the ceramic insulating layer.
摘要:
The object is to provide a material for forming a capacitor layer which is excellent in adhesion within a dielectric layer and a bottom electrode of a capacitor circuit. And to provide a material for forming a capacitor layer which has a new conductive layer for forming a bottom electrode capable of being used as an electrode serving also as a resistance circuit and the like. To solve the problem, the invention provides a conductive layer in which a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer or a nickel-phosphorus alloy layer, a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer, to assure excellent adhesion within the bottom electrode of a capacitor circuit and the dielectric layer in a printed wiring board having a dielectric layer between an top electrode and a bottom electrode.
摘要:
An object of the present invention is to provide a capacitor-forming material having a stable adhesion between a dielectric layer and an electrode-forming layer. To achieve the object, the capacitor-forming material in which an oxides dielectric layer is provided between a top-electrode-forming layer and a bottom-electrode-forming layer, wherein at least one of the top-electrode-forming layer and the bottom-electrode-forming layer has a two-layer construction constituted with a bulk-metal layer and a composite layer composed of metal and metal oxide which is made to contact with the oxides dielectric layer. In particular, it is preferable to employ a capacitor-forming material having the top-electrode-forming layer which has two-layer construction constituted with the bulk-metal layer and the composite layer composed of metal and metal oxide, and has a layer construction in which the bulk-metal layer and the composite layer composed of metal and metal oxide are stacked to make the composite layer composed of metal and metal oxide contact with the oxides dielectric layer.
摘要:
A capacitor layer forming material that consists of a dielectric film making use of the sol-gel process excelling in production cost merit, being capable of producing a capacitor circuit of prolonged life having a nonconventional high electric capacity. There is provided capacitor layer forming material (1) having dielectric layer (4) interposed between first conductive layer (2) for formation of an upper electrode and second conductive layer (3) for formation of a lower electrode, characterized in that the dielectric layer (4) consists of an oxide dielectric film produced by the sol-gel process containing an oxide crystal structure of 50 to 300 nm grain diameter (major axis) being a coarse crystal structure having grown in the thickness direction and plane direction of the dielectric layer. Further, there is provided a process for efficiently producing this capacitor layer forming material.
摘要:
There are provided an electrode foil which has both the functions of a supporting base material and a reflective electrode and also has a superior thermal conductivity; and an organic device using the same. The electrode foil comprises a metal foil and a reflective layer provided directly on the metal foil.
摘要:
An object of the present invention is to provide a material for forming a capacitor layer comprising a dielectric layer formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method. The material can reduce a leakage current of a capacitor circuit. In order to achieve the object, a material for forming a capacitor layer comprising a dielectric layer between a first conductive layer to be used for forming a top electrode and a second conductive layer to be used for forming a bottom electrode, characterized in that the dielectric layer is a dielectric oxide film formed by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method; and particles constituting the dielectric oxide film are impregnated with a resin component is employed. In addition, a manufacturing method characterized in that the dielectric oxide film is formed on the surface of a material to be the bottom electrode by any one of a sol-gel method, an MOCVD method, and a sputtering deposition method; a resin varnish is impregnated into a surface of the dielectric oxide film; the resin is dried and cured to form the dielectric layer; and then a top electrode constituting layer is provided on the dielectric layer is employed.
摘要:
The present invention has an object to provide a method for forming an oxide dielectric layer, which dielectric layer is formed by applying the sol-gel method, and is hardly damaged by an etching solution and excellent in dielectric characteristics such as a large electric capacitance. To achieve the object, the forming method of an oxide dielectric layer by applying a sol-gel method characterized by being provided with the following processes (a) to (c) is employed. Process (a): A solution preparing process of preparing a sol-gel solution for manufacturing an aiming oxide dielectric layer. Process (b): A coating process wherein stages of the sol-gel solution coating on the surface of a metal substrate followed by drying in an oxygen-containing atmosphere followed by pyrolysis in an oxygen-containing atmosphere sequentially is made one unit step; the one unit step is repeated twice or more times; and a pre-baking stage at 550-deg.C to 1000-deg.C in an inert gas-substituted atmosphere or the like is provided optionally between the one unit step and the next one unit step to control the film thickness. Process (c): A baking process of finally subjecting the coated metal substrate to a baking process at 550-deg.C to 1000-deg.C in an inert gas-substituted atmosphere or the like to finish the dielectric layer.
摘要:
It is an object of the present invention to provide a capacitor layer forming material which is applicable to printed wiring boards manufactured through a high-temperature processing of 300° C. to 400° C. of a fluorine-contained resin substrate, a liquid crystal polymer and the like, and exhibits no deterioration of the strength after a high-temperature heating. In order to achieve the object, a capacitor layer forming material for a printed wiring board which comprises a first conductive layer used for forming a top electrode, a second conductive layer used for forming a bottom electrode and a dielectric layer between the first and second conductive layers, characterized in that for the second conductive layer, a nickel layer or a nickel alloy layer is employed. The nickel layer or the nickel alloy layer as the second conductive layer preferably has a thickness of 10 micron meter to 100 micron meter. Further, the sol-gel method is suitably employed to form the dielectric layer on the nickel layer or the nickel alloy layer constituting the second conductive layer.
摘要:
The object is to provide a material for forming a capacitor layer which is excellent in adhesion within a dielectric layer and a bottom electrode of a capacitor circuit. And to provide a material for forming a capacitor layer which has a new conductive layer for forming a bottom electrode capable of being used as an electrode serving also as a resistance circuit and the like. To solve the problem, the invention provides a conductive layer in which a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer or a nickel-phosphorus alloy layer, a pure nickel layer and a nickel-phosphorus alloy layer are deposited in order on a surface of a copper layer, to assure excellent adhesion within the bottom electrode of a capacitor circuit and the dielectric layer in a printed wiring board having a dielectric layer between an top electrode and a bottom electrode.