公开(公告)号：US06938501B2

公开(公告)日：2005-09-06

申请号：US10625896

申请日：2003-07-24

申请人： Shinji Yoshihara ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Shinji Yoshihara ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： G01P21/00 ,  G01L1/22 ,  G01L9/00 ,  G01L9/06 ,  G01L27/00 ,  G01P15/12 ,  H01L21/00 ,  H01L27/14 ,  H01L29/84

CPC分类号： G01L9/0054 ,  G01L9/06 ,  G01L27/005 ,  G01L27/007

摘要： A semiconductor dynamic quantity sensor detects a dynamic force and a fault diagnosis through the use of a single bridge circuit. Sensor output terminals are connected to midpoints between gauge resistors to make a combination of the midpoints at which an equal electric potential is measured when no pressure is applied to a diaphragm of the sensor. Fault diagnostic output terminals are connected to wiring patterns in the same manner as the first output terminals. One of the sensor output terminals has three selectable terminals connected to different positions of the midpoint. One of the diagnostic output terminals also has three selectable terminals connected to different positions of the wiring patterns. Accordingly, an offset voltage of the sensor output and the fault diagnostic output can be adjusted appropriately when one of the selectable terminals are selected as appropriate.

摘要翻译： 半导体动态量传感器通过使用单桥电路检测动态力和故障诊断。 传感器输出端子连接到量规电阻之间的中点，以便在没有压力施加到传感器的隔膜上时测量相等电位的中点的组合。 故障诊断输出端子以与第一输出端子相同的方式连接到布线图案。 其中一个传感器输出端子有三个可选择的端子连接到中点的不同位置。 诊断输出端子之一还具有连接到布线图案的不同位置的三个可选端子。 因此，当适当地选择可选择的端子之一时，可以适当地调整传感器输出的偏移电压和故障诊断输出。

公开(公告)号：US06931937B1

公开(公告)日：2005-08-23

申请号：US11019286

申请日：2004-12-23

申请人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： G01L1/16 ,  G01L1/18 ,  G01L9/00 ,  G01L9/04 ,  G01L9/06 ,  G01L9/08 ,  G01L19/04 ,  G01L23/18 ,  G01L23/22

CPC分类号： G01L1/18 ,  G01L9/0042 ,  G01L9/0058 ,  G01L23/18 ,  G01L23/22

摘要： A pressure sensor includes: a casing; a sensor chip with a gauge resistor; a boss disposed on the gauge resistor; a metallic diaphragm capable of distorting in accordance with a pressure; and a load transmission member disposed between the metallic diaphragm and the boss. The casing accommodates the sensor chip, the boss and the load transmission member. The casing is covered with the metallic diaphragm. The pressure applied to the diaphragm is detected such that the load corresponding to the pressure is applied to the gauge resistor through the metallic diaphragm, the load transmission member and the boss so that the pressure is measured on the basis of a resistance change of the gauge resistor. The gauge resistor is larger than the boss.

摘要翻译： 压力传感器包括：壳体; 具有量规电阻器的传感器芯片; 设在量规电阻上的一个老板; 能够根据压力变形的金属隔膜; 以及设置在所述金属膜和所述凸台之间的载荷传递部件。 壳体容纳传感器芯片，凸台和负载传递构件。 外壳被金属隔膜覆盖。 检测施加到隔膜的压力，使得通过金属隔膜，负载传递构件和凸台将对应于压力的负载施加到量规电阻器，使得基于量规的电阻变化来测量压力 电阻。 量规电阻大于凸台。

公开(公告)号：US06615668B2

公开(公告)日：2003-09-09

申请号：US09920831

申请日：2001-08-03

申请人： Inao Toyoda ,  Yasutoshi Suzuki

发明人： Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： G01L904

CPC分类号： G01L9/0051 ,  G01L9/0054 ,  G01L19/14

摘要： A diaphragm that distorts according to pressure applied thereon and a signal processor circuit are formed on a semiconductor substrate having an (110)-surface-orientation. Stain gauges converting the diaphragm distortion into an electric signal and forming a bridge circuit are formed on the diaphragm. The electric signal from the bridge circuit is processed by the signal processor circuit. A pair of transistors constituting an input circuit of an amplifier in the signal processor circuit are positioned on the substrate to equalize their source-drain current directions. Thermal stress influence on the sensor outputs is minimized since sensor components are formed on the substrate having the (110)-surface orientation, and thereby the pressure applied to the diaphragm is accurately detected.

公开(公告)号：US06184561B2

公开(公告)日：2001-02-06

申请号：US09322033

申请日：1999-05-28

申请人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Hiroaki Tanaka ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： H01L2982

CPC分类号： G01L9/0042 ,  G01L9/0054 ,  G01L9/065 ,  H01L29/84

摘要： In a semiconductor pressure sensor having a diaphragm portion and strain gauges on the diaphragm portion, Al stress balance films are provided around the diaphragm portion to balance changes in stress of the strain gauges, which are produced by a change in temperature. As a result, sensor output is prevented from varying due to the change in temperature.

摘要翻译： 在隔膜部分具有隔膜部分和应变计的半导体压力传感器中，在隔膜部分周围设置有Al应力平衡膜，以平衡由温度变化产生的应变仪的应力变化。 结果，由于温度的变化，防止传感器输出变化。

公开(公告)号：US06601452B2

公开(公告)日：2003-08-05

申请号：US09866792

申请日：2001-05-30

申请人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Yuichiro Murata ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： G01L916

CPC分类号： G01L9/0042 ,  B81B3/0075 ,  B81B2201/0264 ,  B81B2203/0127

摘要： A semiconductor pressure sensor has a recess formed on a semiconductor substrate. The recess has a sidewall, a bottom wall that serves as a diaphragm for detecting a pressure, and a corner portion provided between the sidewall and the bottom wall and having a radius of curvature R. The radius of curvature R satisfies a formula of: R/S=526·(d/S)2−0.037·(d/S)+a1, where S is an area of the diaphragm, d is a thickness of the diaphragm, and a1 is in a range of 9.6×10−7 to 16×10−7 inclusive.

摘要翻译： 半导体压力传感器具有形成在半导体衬底上的凹部。 凹部具有侧壁，作为用于检测压力的隔膜的底壁，以及设置在侧壁和底壁之间并具有曲率半径R的角部。曲率半径R满足以下公式：其中 S是隔膜的面积，d是隔膜的厚度，a1在9.6×10-7至16×10-7的范围内。

公开(公告)号：US06521966B1

公开(公告)日：2003-02-18

申请号：US09547457

申请日：2000-04-12

申请人： Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Seiichiro Ishio ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： H01L2982

CPC分类号： G01L19/147 ,  H01L2224/48091 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2924/01068 ,  H01L2924/00014

摘要： A semiconductor strain sensor in which a sensor element for detecting a strain signal is mounted in a resin package member, which can restrain a creep stress of the package member from affecting to the sensor element. A semiconductor strain sensor is provided with a lead frame integrally molded with a resin package member, and a sensor chip made of silicon. The sensor chip is mounted on one surface of an element mounting portion of the lead frame, and is capable of externally outputting electric signal via a wire in accordance with strain when pressure is applied. An opening portion is provided in the package member, so that the entire area of another surface of the lead frame, where positions beneath the sensor chip, is non-contacted with the package member. Since another surface of the lead frame is non-contacted with the package member at the opening portion, even if the creep occurs in the package member, it can prevent stress (creep stress) undergone in accordance with the creep deformation from being transferred to the sensor chip.

摘要翻译： 一种半导体应变传感器，其中用于检测应变信号的传感器元件安装在树脂封装构件中，其可以抑制封装构件的蠕变应力对传感器元件的影响。 半导体应变传感器设置有与树脂封装构件一体模制的引线框架和由硅制成的传感器芯片。 传感器芯片安装在引线框架的元件安装部分的一个表面上，并且能够在施加压力时根据应变通过导线从外部输出电信号。 开口部分设置在封装构件中，使得引线框架的另一表面的位于传感器芯片下方的位置的整个区域与封装构件不接触。 由于引线框架的另一表面在开口部处与封装构件不接触，所以即使在封装构件中发生蠕变，也可以防止根据蠕变变形而发生的应力（蠕变应力）被转移到 传感器芯片。

公开(公告)号：US6069378A

公开(公告)日：2000-05-30

申请号：US985043

申请日：1997-12-04

申请人： Inao Toyoda ,  Yasutoshi Suzuki ,  Keijiro Inoue

发明人： Inao Toyoda ,  Yasutoshi Suzuki ,  Keijiro Inoue

IPC分类号： H01L27/14 ,  H01L27/144 ,  H01L31/10 ,  H01L31/062 ,  H01L31/0203 ,  H01L31/0232 ,  H01L31/113

CPC分类号： H01L27/1443 ,  Y10T428/19 ,  Y10T428/236

摘要： A photo diode and a signal processing circuit are formed on a silicon substrate. The signal processing circuit comprises a PNP transistor and an NPN transistor. A region of the signal processing circuit on the silicon substrate is covered by an aluminum thin film functioning as a shielding film. A covered distance L(.mu.m) is defined as an overhang of the aluminum thin film from the edge of the PNP transistor, and is determined based on a ratio of a minimum current of the PNP transistor, which induces malfunction in the signal processing circuit under the solar radiation, to a current generated in the circuit element when subjected to the solar radiation without the aluminum thin film.

摘要翻译： 在硅衬底上形成光电二极管和信号处理电路。 信号处理电路包括PNP晶体管和NPN晶体管。 硅衬底上的信号处理电路的区域被用作屏蔽膜的铝薄膜覆盖。 覆盖距离L（μm）被定义为来自PNP晶体管的边缘的铝薄膜的突出端，并且基于PNP晶体管的最小电流的比率来确定，该PNP晶体管在信号处理电路中引起故障 在太阳辐射下，当受到没有铝薄膜的太阳辐射时在电路元件中产生的电流。

公开(公告)号：US5779918A

公开(公告)日：1998-07-14

申请号：US800325

申请日：1997-02-14

申请人： Keijiro Inoue ,  Inao Toyoda ,  Yasutoshi Suzuki

发明人： Keijiro Inoue ,  Inao Toyoda ,  Yasutoshi Suzuki

IPC分类号： H01L27/144 ,  H01L21/00 ,  B44C1/22

CPC分类号： H01L27/1443

摘要： A photoelectric transfer device having a light receiving element and a signal processing circuit are formed in a semiconductor substrate, a silicon oxide film is formed on the light receiving element, a first aluminum thin film is deposited on the silicon substrate, and the first aluminum thin film is patterned to make a wire connected with the signal processing circuit and a protective film placed on the silicon oxide film. Thereafter, an inter-layer insulating film is deposited on the silicon substrate while covering the protective film, a portion of the inter-layer insulating film placed on the protective film is etched and removed, a second aluminum thin film is deposited on the inter-layer insulating film and the protective film, and a portion of the second aluminum thin film placed on the protective film and the protective film are successively etched and removed. Because the inter-layer insulating film placed above the light receiving element is removed, an insulating film placed on the light receiving element is not thinned, so that sensitivity of the photoelectric transfer device can be improved. Also, because the protective film is arranged on the silicon oxide film when the portion of the inter-layer insulating film is etched, the silicon oxide film is not etched, so that a film thickness of the silicon oxide film can be correctly set to a desired value.

摘要翻译： 在半导体衬底中形成具有光接收元件和信号处理电路的光电转移装置，在光接收元件上形成氧化硅膜，在硅衬底上沉积第一铝薄膜，并将第一铝薄片 图案化膜以形成与信号处理电路连接的电线和放置在氧化硅膜上的保护膜。 此后，在覆盖保护膜的同时，在硅衬底上沉积层间绝缘膜，蚀刻除去放置在保护膜上的层间绝缘膜的一部分，在第二铝薄膜上淀积第二铝薄膜， 层状绝缘膜和保护膜，并且依次蚀刻除去放置在保护膜和保护膜上的第二铝薄膜的一部分。 由于去除了置于光接收元件上方的层间绝缘膜，所以放置在光接收元件上的绝缘膜不会变薄，从而可以提高光电转移装置的灵敏度。 此外，由于当层间绝缘膜的部分被蚀刻时保护膜被布置在氧化硅膜上，因此氧化硅膜不被蚀刻，使得氧化硅膜的膜厚可以被正确地设定为 所需值。

公开(公告)号：US5594236A

公开(公告)日：1997-01-14

申请号：US356083

申请日：1994-12-14

申请人： Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Koki Mizuno ,  Inao Toyoda ,  Yukio Tsuzuki

发明人： Yasutoshi Suzuki ,  Kenichi Yokoyama ,  Koki Mizuno ,  Inao Toyoda ,  Yukio Tsuzuki

IPC分类号： H01L31/0203 ,  H01L31/0216 ,  H01J40/14

CPC分类号： H01L31/0203 ,  H01L24/05 ,  H01L31/02164 ,  H01L2224/04042 ,  H01L2224/05556 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48463 ,  H01L2924/12036 ,  H01L2924/12043

摘要： A sunlight sensor is provided which detects sunlight by means of a semiconductor device and achieves the desired elevation angle characteristics. The sunlight sensor is implemented as a semiconductor device having p+ layers 10 and 11 as a light-responsive section and an n+ or n layer 9 as a light-nonresponsive section, and additionally having a light-detection element 2 which outputs a detection signal responsive to the amount of light received by the p+ layers 10 and 11. A light-transparent molding 4 is provided at least over the light-detection element 2, and additionally a light-cutoff mask 5 is provided on the transparent molding 4. The relative positions of the light-cutoff mask, the p+ layers 10 and 11, and the n+ or n layer 9 are then established. By doing this, of the shadow of the light-cutoff mask 5 which is created when incident sunlight 13 and 14 strikes the light-detection element, the surface area of at least the part of the shadow which falls on the p+ layers 10 and 11 and the part of the shadow that falls on the n+ or n layer 9 are controlled so as to obtain the desired elevation angle characteristics.

摘要翻译： 提供了通过半导体装置检测太阳光并实现期望的仰角特性的阳光传感器。 太阳光传感器被实现为具有作为光响应部分的p +层10和11以及作为光无响应部分的n +或n层9的半导体器件，并且另外具有响应性地输出检测信号的光检测元件2 相对于由p +层10和11接收的光量。透光模制件4至少设置在光检测元件2上，另外在透明模制件4上设置有光屏蔽5。 然后建立遮光掩模，p +层10和11以及n +或n层9的位置。 通过这样做，当入射太阳光13和14撞击光检测元件时产生的遮光掩模5的阴影中，至少部分阴影部分落在p +层10和11上的表面积 并且控制落在n +或n层9上的阴影的一部分以获得期望的仰角特性。

公开(公告)号：US06661225B2

公开(公告)日：2003-12-09

申请号：US10348187

申请日：2003-01-22

申请人： Inao Toyoda ,  Yasutoshi Suzuki ,  Yuichiro Murata ,  Hirofumi Uenoyama

发明人： Inao Toyoda ,  Yasutoshi Suzuki ,  Yuichiro Murata ,  Hirofumi Uenoyama

IPC分类号： G11B5147

CPC分类号： G01D5/145 ,  B82Y25/00 ,  G01P3/487 ,  G01R33/093

摘要： In a revolution detecting device, a tunneling magnetoresistance sensor having an element located in a region is provided. The tunneling magnetoresistance sensor comprises a substrate, a pinned layer composed of ferromagnetism material and located to one side of the substrate, a tunneling layer composed of insulating film and located to one side of the pinned layer and a free layer composed of ferromagnetism film and located to one side of the tunneling layer. The element is configured to detect a change of magnetoresistance of the element according to a magnetic field applied in the region in which the element is located. The change of the magnetoresistance of the element is based on a change of current flowing through the tunneling layer between the pinned layer and the free layer. In the revolution detecting device, a revolution member is disposed in a vicinity of the element in the Y axis from a viewpoint of the element. The revolution member has a surface portion opposite to the element. The surface portion is formed with S poles and N poles which are alternately arranged. In the revolution detecting device, a magnet is disposed in a vicinity of the element and generating the magnetic field and a direction of the magnetic field is substantially parallel to the Y axis at a center portion of the element. When the revolution member revolves, the S poles and N poles are configured to move substantially in parallel to the X axis on the Y axis determined by the element.