摘要:
The present invention is intended to stabilize a luminance and prevent a degradation during use in a display device of an active matrix driving system that arranges TFTs in matrix, by completely repairing a defective portion through application of a reverse voltage and repairing a short-circuit or leak area of a light emitting device. A light emitting device with a pixel structure of an active matrix driving system having TFTs arranged at each pixel has a feature that a reverse voltage is applied to the light emitting element without passing through the TFT is disclosed. The present invention provides a pixel structure capable of attaining the feature and a method of manufacturing the same.
摘要:
The present invention is intended to stabilize a luminance and prevent a degradation during use in a display device of an active matrix driving system that arranges TFTs in matrix, by completely repairing a defective portion through application of a reverse voltage and repairing a short-circuit or leak area of a light emitting device. A light emitting device with a pixel structure of an active matrix driving system having TFTs arranged at each pixel has a feature that a reverse voltage is applied to the light emitting element without passing through the TFT is disclosed. The present invention provides a pixel structure capable of attaining the feature and a method of manufacturing the same.
摘要:
The present invention is intended to stabilize a luminance and prevent a degradation during use in a display device of an active matrix driving system that arranges TFTs in matrix, by completely repairing a defective portion through application of a reverse voltage and repairing a short-circuit or leak area of a light emitting device. A light emitting device with a pixel structure of an active matrix driving system having TFTs arranged at each pixel has a feature that a reverse voltage is applied to the light emitting element without passing through the TFT is disclosed. The present invention provides a pixel structure capable of attaining the feature and a method of manufacturing the same.
摘要:
A light emitting element has a property that a resistance value (internal resistance value) thereof changes according to the ambient temperature. Specifically, assuming that the room temperature is a normal temperature, when the ambient temperature becomes higher than the normal temperature, a resistance value is decreased, and when the ambient temperature becomes lower than the normal temperature, a resistance value is increased. Therefore, when the ambient temperature changes or degradation is caused with time due to the aforementioned property of the light emitting element, luminance varies. The invention provides a display device where an effect of current fluctuation of a light emitting element, which is caused by the change in ambient temperature and degradation with time, is suppressed. The display device comprises a monitoring element, to which a current is supplied from a current source. A voltage applied to the monitoring element is applied to a light emitting element.
摘要:
A light-emitting element has a property that a resistance value (internal resistance) changes in accordance with an environmental temperature. It is an object to downsize a monitoring element which corrects an influence of variations in current value of the light-emitting element, which are caused by an environmental temperature change and a change with time. A pixel includes a plurality of sub-pixels, areas of light-emitting elements provided in the individual sub-pixels are made to be different from each other, and an area of a monitoring element is made to be the same as an area of the light-emitting element in any of the sub-pixels, thereby correcting light-emission of the pixel by the monitoring element.
摘要:
It is an object of the present invention to provide a method of manufacturing a display device, which can display images favorably by insulating a short-circuit portion between an anode and a cathode. Further, it is another object of the invention to provide a method of manufacturing a display device, which can prevent intrusion of moisture so as to inhibit deterioration of a light emitting element when the short-circuit portion between the anode and the cathode is insulated. Specifically, the invention provide a method of manufacturing a display device, wherein a reverse bias voltage is applied to the light emitting element including an electro-luminescent material between the anode and the cathode so as to insulate the short-circuit portion between the anode and the cathode at a temperature of from −40° C. to 8° C., more preferably, from −25° C. to 8° C.
摘要:
A driving method is provided which improves the duty ratio, which presents high image quality by securing a sufficient length of sustain (lighting) period when gray scales are increased in number, and which prolongs the lifetime of a light emitting element. One frame period has m (m is a natural number equal to or larger than 2) different sub-frame periods SF1, SF2, . . . , and SFm. The m different sub-frame periods SF1, SF2, . . . , and SFm each have an address period and a sustain period. Analog data signals are inputted to their respective light emitting elements in the address period. In the sustain period, the light emitting elements emit light in response to the analog data signals at n (n is a natural number equal to or larger than 2) levels of luminance for gray scale display.
摘要:
It is an object of the present invention to provide a method of manufacturing a display device, which can display images favorably by insulating a short-circuit portion between an anode and a cathode. Further, it is another object of the invention to provide a method of manufacturing a display device, which can prevent intrusion of moisture so as to inhibit deterioration of a light emitting element when the short-circuit portion between the anode and the cathode is insulated. Specifically, the invention provide a method of manufacturing a display device, wherein a reverse bias voltage is applied to the light emitting element including an electro-luminescent material between the anode and the cathode so as to insulate the short-circuit portion between the anode and the cathode at a temperature of from −40° C. to 8° C., more preferably, from −25° C. to 8° C.
摘要:
A light emitting element has a property that a resistance value (internal resistance value) thereof changes according to the ambient temperature. Specifically, assuming that the room temperature is a normal temperature, when the ambient temperature becomes higher than the normal temperature, a resistance value is decreased, and when the ambient temperature becomes lower than the normal temperature, a resistance value is increased. Therefore, when the ambient temperature changes or degradation is caused with time due to the aforementioned property of the light emitting element, luminance varies. The invention provides a display device where an effect of current fluctuation of a light emitting element, which is caused by the change in ambient temperature and degradation with time, is suppressed. The display device comprises a monitoring element, to which a current is supplied from a current source. A voltage applied to the monitoring element is applied to a light emitting element.
摘要:
The present invention provides a thin semiconductor device in which its security such as prevention of counterfeit or information leakage is to be enhanced. One feature of the present invention is a thin semiconductor device in which a plurality of thin film integrated circuits are mounted and in which at least one integrated circuit is different from the other integrated circuits in any one of a specification, layout, frequency for transmission or reception, a memory, a communication means, a communication rule and the like. According to the present invention, a thin semiconductor device tag having the plurality of thin film integrated circuits communicates with a reader/writer and at least one of the thin film integrated circuits receives a signal to write information in a memory, and the information written in the memory determines which of the thin film integrated circuits communicates.