公开(公告)号：US20130228875A1

公开(公告)日：2013-09-05

申请号：US13410073

申请日：2012-03-01

申请人： Yi-Jing Lee ,  You-Ru Lin ,  Cheng-Tien Wan ,  Cheng-Hsien Wu ,  Chih-Hsin Ko

发明人： Yi-Jing Lee ,  You-Ru Lin ,  Cheng-Tien Wan ,  Cheng-Hsien Wu ,  Chih-Hsin Ko

IPC分类号： H01L27/088 ,  H01L21/336

CPC分类号： H01L29/66795 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02634 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/76224 ,  H01L27/0886 ,  H01L29/7853

摘要： A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.

公开(公告)号：US08994002B2

公开(公告)日：2015-03-31

申请号：US13422531

申请日：2012-03-16

申请人： Yi-Jing Lee ,  You-Ru Lin ,  Cheng-Tien Wan ,  Cheng-Hsien Wu ,  Chih-Hsin Ko

发明人： Yi-Jing Lee ,  You-Ru Lin ,  Cheng-Tien Wan ,  Cheng-Hsien Wu ,  Chih-Hsin Ko

IPC分类号： H01L21/20 ,  H01L29/772 ,  H01L21/335 ,  H01L29/10 ,  H01L29/165 ,  H01L29/267 ,  H01L29/78 ,  H01L29/51

CPC分类号： H01L29/7851 ,  H01L21/02532 ,  H01L21/02538 ,  H01L29/045 ,  H01L29/1054 ,  H01L29/155 ,  H01L29/161 ,  H01L29/165 ,  H01L29/205 ,  H01L29/267 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/785

摘要： A fin field effect transistor (FinFET) device is provided. The FinFET includes a superlattice layer and a strained layer. The superlattice layer is supported by a substrate. The strained layer is disposed on the superlattice layer and provides a gate channel. The gate channel is stressed by the superlattice layer. In an embodiment, the superlattice layer is formed by stacking different silicon germanium alloys or stacking other III-V semiconductor materials.

摘要翻译： 提供了鳍状场效应晶体管（FinFET）器件。 FinFET包括超晶格层和应变层。 超晶格层由衬底支撑。 应变层设置在超晶格层上并提供栅极通道。 栅极通道被超晶格层压制。 在一个实施例中，超晶格层通过堆叠不同的硅锗合金或堆叠其它III-V半导体材料形成。

公开(公告)号：US08815712B2

公开(公告)日：2014-08-26

申请号：US13414357

申请日：2012-03-07

申请人： Cheng-Tien Wan ,  You-Ru Lin ,  Yi-Jing Lee ,  Cheng-Hsien Wu ,  Chih-Hsin Ko ,  Clement Hsingjen Wann

发明人： Cheng-Tien Wan ,  You-Ru Lin ,  Yi-Jing Lee ,  Cheng-Hsien Wu ,  Chih-Hsin Ko ,  Clement Hsingjen Wann

IPC分类号： H01L21/36 ,  H01L21/20

CPC分类号： H01L21/3065 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02658 ,  H01L29/66636 ,  H01L29/78

摘要： A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region.

摘要翻译： 在第一半导体区域的表面上进行处理，其中使用包括含氧气体和用于蚀刻半导体材料的蚀刻气体的处理气体进行处理。 进行外延以在第一半导体区域的表面上生长第二半导体区域。

公开(公告)号：US08742509B2

公开(公告)日：2014-06-03

申请号：US13410073

申请日：2012-03-01

申请人： Yi-Jing Lee ,  You-Ru Lin ,  Cheng-Tien Wan ,  Cheng-Hsien Wu ,  Chih-Hsin Ko

发明人： Yi-Jing Lee ,  You-Ru Lin ,  Cheng-Tien Wan ,  Cheng-Hsien Wu ,  Chih-Hsin Ko

IPC分类号： H01L21/70

CPC分类号： H01L29/66795 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02631 ,  H01L21/02634 ,  H01L21/30625 ,  H01L21/3065 ,  H01L21/76224 ,  H01L27/0886 ,  H01L29/7853

摘要： A FinFET comprises an isolation region formed in a substrate, a cloak-shaped active region formed over the substrate, wherein the cloak-shaped active region has an upper portion protruding above a top surface of the isolation region. In addition, the FinFET comprises a gate electrode wrapping the channel of the cloak-shaped active region.

摘要翻译： FinFET包括形成在衬底中的隔离区域，形成在衬底上的斗篷形有源区域，其中斗篷形有源区域具有突出于隔离区域顶表面上方的上部。 此外，FinFET包括包围斗篷形有源区的通道的栅电极。

公开(公告)号：US20130171792A1

公开(公告)日：2013-07-04

申请号：US13414357

申请日：2012-03-07

申请人： Cheng-Tien Wan ,  You-Ru Lin ,  Yi-Jing Lee ,  Cheng-Hsien Wu ,  Chih-Hsin Ko ,  Clement Hsingjen Wann

发明人： Cheng-Tien Wan ,  You-Ru Lin ,  Yi-Jing Lee ,  Cheng-Hsien Wu ,  Chih-Hsin Ko ,  Clement Hsingjen Wann

IPC分类号： H01L21/762 ,  H01L21/336

CPC分类号： H01L21/3065 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02538 ,  H01L21/02658 ,  H01L29/66636 ,  H01L29/78

摘要： A treatment is performed on a surface of a first semiconductor region, wherein the treatment is performed using process gases including an oxygen-containing gas and an etching gas for etching the semiconductor material. An epitaxy is performed to grow a second semiconductor region on the surface of the first semiconductor region.

摘要翻译： 在第一半导体区域的表面上进行处理，其中使用包括含氧气体和用于蚀刻半导体材料的蚀刻气体的处理气体进行处理。 进行外延以在第一半导体区域的表面上生长第二半导体区域。

公开(公告)号：US20130240836A1

公开(公告)日：2013-09-19

申请号：US13422531

申请日：2012-03-16

申请人： Yi-Jing Lee ,  You-Ru Lin ,  Cheng-Tien Wan ,  Cheng-Hsien Wu ,  Chih-Hsin Ko

发明人： Yi-Jing Lee ,  You-Ru Lin ,  Cheng-Tien Wan ,  Cheng-Hsien Wu ,  Chih-Hsin Ko

IPC分类号： H01L29/772 ,  H01L21/335

CPC分类号： H01L29/7851 ,  H01L21/02532 ,  H01L21/02538 ,  H01L29/045 ,  H01L29/1054 ,  H01L29/155 ,  H01L29/161 ,  H01L29/165 ,  H01L29/205 ,  H01L29/267 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/7842 ,  H01L29/785

摘要： A fin field effect transistor (FinFET) device is provided. The FinFET includes a superlattice layer and a strained layer. The superlattice layer is supported by a substrate. The strained layer is disposed on the superlattice layer and provides a gate channel. The gate channel is stressed by the superlattice layer. In an embodiment, the superlattice layer is formed by stacking different silicon germanium alloys or stacking other III-V semiconductor materials.

公开(公告)号：US20130049068A1

公开(公告)日：2013-02-28

申请号：US13220979

申请日：2011-08-30

申请人： You-Ru Lin ,  Cheng-Hsien Wu ,  Chih-Hsin Ko ,  Clement Hsingjen Wann

发明人： You-Ru Lin ,  Cheng-Hsien Wu ,  Chih-Hsin Ko ,  Clement Hsingjen Wann

IPC分类号： H01L29/772 ,  H01L21/20

CPC分类号： H01L29/66795 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/30604 ,  H01L21/76224 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7853

摘要： The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond-like shape structure has at least one surface of a second crystal plane orientation; a gate structure disposed over the diamond-like shape structure, wherein the gate structure separates a source region and a drain region; and a channel region defined in the diamond-like shape structure between the source and drain regions.

摘要翻译： 本公开提供了一种FinFET器件。 FinFET器件包括第一半导体材料的半导体衬底; 覆盖半导体衬底的第一半导体材料的鳍结构，其中鳍结构具有第一晶面取向的顶表面; 设置在所述翅片结构的顶表面上的第二半导体材料的菱形形状结构，其中所述菱形形状结构具有至少一个第二晶面取向的表面; 设置在所述菱形形状结构上的栅极结构，其中所述栅极结构分离源极区域和漏极区域; 以及在源极和漏极区域之间以菱形形状结构限定的沟道区域。

公开(公告)号：US08841701B2

公开(公告)日：2014-09-23

申请号：US13220979

申请日：2011-08-30

申请人： You-Ru Lin ,  Cheng-Hsien Wu ,  Chih-Hsin Ko ,  Clement Hsingjen Wann

发明人： You-Ru Lin ,  Cheng-Hsien Wu ,  Chih-Hsin Ko ,  Clement Hsingjen Wann

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L29/04

CPC分类号： H01L29/66795 ,  H01L21/02532 ,  H01L21/02609 ,  H01L21/30604 ,  H01L21/76224 ,  H01L29/045 ,  H01L29/0649 ,  H01L29/0847 ,  H01L29/16 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7853

摘要： The present disclosure provides a FinFET device. The FinFET device comprises a semiconductor substrate of a first semiconductor material; a fin structure of the first semiconductor material overlying the semiconductor substrate, wherein the fin structure has a top surface of a first crystal plane orientation; a diamond-like shape structure of a second semiconductor material disposed over the top surface of the fin structure, wherein the diamond-like shape structure has at least one surface of a second crystal plane orientation; a gate structure disposed over the diamond-like shape structure, wherein the gate structure separates a source region and a drain region; and a channel region defined in the diamond-like shape structure between the source and drain regions.

摘要翻译： 本公开提供了一种FinFET器件。 FinFET器件包括第一半导体材料的半导体衬底; 覆盖半导体衬底的第一半导体材料的鳍结构，其中鳍结构具有第一晶面取向的顶表面; 设置在所述翅片结构的顶表面上的第二半导体材料的菱形形状结构，其中所述菱形形状结构具有至少一个第二晶面取向的表面; 设置在所述菱形形状结构上的栅极结构，其中所述栅极结构分离源极区域和漏极区域; 以及在源极和漏极区域之间以菱形形状结构限定的沟道区域。

公开(公告)号：US08836016B2

公开(公告)日：2014-09-16

申请号：US13415339

申请日：2012-03-08

申请人： Cheng-Hsien Wu ,  Chih-Hsin Ko ,  Clement Hsingjen Wann

发明人： Cheng-Hsien Wu ,  Chih-Hsin Ko ,  Clement Hsingjen Wann

IPC分类号： H01L29/772

CPC分类号： H01L29/7851 ,  H01L21/0259 ,  H01L21/02636 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/76224 ,  H01L21/8252 ,  H01L29/0649 ,  H01L29/1037 ,  H01L29/1054 ,  H01L29/205 ,  H01L29/267 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7786 ,  H01L29/7842 ,  H01L29/7848 ,  H01L29/785

摘要： An embodiment is a structure comprising a substrate, a high energy bandgap material, and a high carrier mobility material. The substrate comprises a first isolation region and a second isolation region. Each of first and second isolation regions extends below a first surface of the substrate between the first and second isolation regions. The high energy bandgap material is over the first surface of the substrate and is disposed between the first and second isolation regions. The high carrier mobility material is over the high energy bandgap material. The high carrier mobility material extends higher than respective top surfaces of the first and second isolation regions to form a fin.

摘要翻译： 实施例是包括基板，高能带隙材料和高载流子迁移率材料的结构。 衬底包括第一隔离区域和第二隔离区域。 第一隔离区域和第二隔离区域中的每一个在第一和第二隔离区域之间延伸到衬底的第一表面的下方。 高能带隙材料在衬底的第一表面上方并且设置在第一和第二隔离区之间。 高载流子迁移率材料超过高能带隙材料。 高载流子迁移率材料比第一和第二隔离区域的相应顶表面高，以形成翅片。

公开(公告)号：US20130248948A1

公开(公告)日：2013-09-26

申请号：US13426106

申请日：2012-03-21

申请人： Ta-Chun Ma ,  Cheng-Hsien Wu ,  Chih-Hsin Ko ,  Clement Hsingjen Wann

发明人： Ta-Chun Ma ,  Cheng-Hsien Wu ,  Chih-Hsin Ko ,  Clement Hsingjen Wann

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7848 ,  H01L21/02639 ,  H01L21/30604 ,  H01L21/3083 ,  H01L29/045 ,  H01L29/0688 ,  H01L29/1037 ,  H01L29/66636 ,  H01L29/66681 ,  H01L29/66795 ,  H01L29/7816 ,  H01L29/7833 ,  H01L29/7851 ,  H01L29/7853

摘要： An embodiment is a FinFET device. The FinFET device comprises a fin, a first source/drain region, a second source/drain region, and a channel region. The fin is raised above a substrate. The first source/drain region and the second source/drain region are in the fin. The channel region is laterally between the first and second source/drain regions. The channel region has facets that are not parallel and not perpendicular to a top surface of the substrate.