公开(公告)号：US20060023395A1

公开(公告)日：2006-02-02

申请号：US11085354

申请日：2005-03-21

申请人： Yi-Li Hsiao ,  Tse-Yi Chen ,  Jerry Hwang ,  Chin-Hsin Peng ,  Jean Wang ,  Chen-Hua Yu

发明人： Yi-Li Hsiao ,  Tse-Yi Chen ,  Jerry Hwang ,  Chin-Hsin Peng ,  Jean Wang ,  Chen-Hua Yu

IPC分类号： H01T23/00

CPC分类号： H01L21/6831 ,  H01L21/67109

摘要： Systems and methods for temperature control of semiconductor wafers are provided. An exemplary embodiment of semiconductor wafer is held by an electrostatic chuck. An exemplary embodiment of system includes a cooling apparatus connecting the electrostatic chuck. The cooling apparatus comprises an inlet, an outlet, a porous flow layer, a porous contact layer contacting the electrostatic chuck, and a porous heat exchange layer disposed between the flow layer and the contact layer. The inlet communicates with the flow layer, and the outlet communicates with the contact layer. The fluid medium is introduced into the flow layer from the inlet and sequentially flows through the heat exchange layer and the contact layer. The fluid medium is discharged from the contact layer through the outlet, thereby exchanging heat from the semiconductor wafer.

摘要翻译： 提供了用于半导体晶片温度控制的系统和方法。 半导体晶片的示例性实施例由静电卡盘保持。 系统的示例性实施例包括连接静电卡盘的冷却装置。 冷却装置包括入口，出口，多孔流动层，与静电卡盘接触的多孔接触层和设置在流动层和接触层之间的多孔热交换层。 入口与流动层连通，出口与接触层连通。 流体介质从入口引入流层，并依次流过热交换层和接触层。 流体介质通过出口从接触层排出，从而交换来自半导体晶片的热量。

公开(公告)号：US20050016467A1

公开(公告)日：2005-01-27

申请号：US10626998

申请日：2003-07-24

申请人： Yi-Li Hsiao ,  Mei-Sheng Zhou ,  Chin-Hsin Peng ,  Chien-Ling Huang ,  Tse-Yi Chen ,  Chun-Yi Lee ,  Hsueh-Chang Wu

发明人： Yi-Li Hsiao ,  Mei-Sheng Zhou ,  Chin-Hsin Peng ,  Chien-Ling Huang ,  Tse-Yi Chen ,  Chun-Yi Lee ,  Hsueh-Chang Wu

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01L21/67248 ,  H01J2237/2001 ,  H01L21/67109

摘要： A system and method which is capable of compensating for unintended elevations in process temperatures induced in a substrate during a semiconductor fabrication process in order to reduce or eliminate disparities in critical dimensions of device features. The system may be a plasma etching system comprising a process chamber containing an electrostatic chuck (ESC) for supporting a wafer substrate. A chiller outside the process chamber includes a main coolant chamber, which contains a main coolant fluid, as well as an compensation coolant chamber, which contains an compensation coolant fluid. A main circulation loop normally circulates the main coolant fluid from the main coolant chamber through the electrostatic chuck to maintain the chuck at a desired set point temperature.

摘要翻译： 一种系统和方法，其能够在半导体制造过程期间补偿在衬底中感应的工艺温度中的意外高度，以便减少或消除器件特征的关键尺寸的不均匀性。 该系统可以是包括含有用于支撑晶片衬底的静电吸盘（ESC）的处理室的等离子体蚀刻系统。 处理室外部的冷却器包括主冷却剂室，其包含主冷却剂流体，以及补偿冷却剂室，其包含补偿冷却剂流体。 主循环回路通常使主冷却剂流体从主冷却剂室通过静电吸盘循环，以将卡盘保持在所需的设定点温度。

公开(公告)号：US06896304B2

公开(公告)日：2005-05-24

申请号：US10234068

申请日：2002-09-03

申请人： Hsiao-Yi Li ,  Chin-Hsin Peng ,  Cheng-Shun Chan ,  Jiann-Sheng Chang ,  Chung-Hao Tseng ,  Chien-Ling Huang

发明人： Hsiao-Yi Li ,  Chin-Hsin Peng ,  Cheng-Shun Chan ,  Jiann-Sheng Chang ,  Chung-Hao Tseng ,  Chien-Ling Huang

IPC分类号： H01L21/00 ,  H01L21/687 ,  B25J15/06

CPC分类号： H01L21/67288 ,  H01L21/67259 ,  H01L21/68707 ,  Y10S294/907 ,  Y10S414/141

摘要： An automatic sensing wafer blade for picking up wafers that is equipped with a sensor capable of self-diagnosing potential failure conditions of the blade and a method for using the wafer blade are described. The automatic sensing wafer blade is equipped with a V-shaped seal ring on a top surface, and a sensor of either a limit switch or a capacitance sensor for sensing the presence or absence of a wafer on top of the wafer blade. The automatic sensing wafer blade is further capable of self-diagnosing any potential failure conditions of the function of the wafer blade due to contaminating particles, or contaminating liquid on the wafer surface, or due to an aged or malfunctioning seal ring on top of the wafer blade.

摘要翻译： 描述了用于拾取晶片的自动感测晶片刀片，其配备有能够自我诊断刀片的潜在故障状况的传感器以及使用晶片刀片的方法。 自动感测晶片叶片在顶表面上配备有V形密封环，以及限制开关或电容传感器的传感器，用于感测在晶片叶片顶部存在或不存在晶片。 自动感测晶片刀片还能够自动诊断由于污染颗粒或晶片表面上的污染液体的晶片叶片的功能的任何潜在故障状况，或者由于晶片顶部的老化或故障密封环 刀。

公开(公告)号：US06860723B2

公开(公告)日：2005-03-01

申请号：US10264404

申请日：2002-10-09

申请人： Ben-Shu Chen ,  Chao-Jung Chang ,  Jui-Cheng Lo ,  Chin-Hsin Peng ,  Chien-Kuo Lu

发明人： Ben-Shu Chen ,  Chao-Jung Chang ,  Jui-Cheng Lo ,  Chin-Hsin Peng ,  Chien-Kuo Lu

IPC分类号： F04B49/20 ,  F04B49/00

CPC分类号： F04B49/20 ,  F04B2205/09

摘要： A system for controlling and monitoring a rate of flow of a fluid, such as a CMP slurry, comprising a pump for pumping the slurry; a flow meter for monitoring the rate of flow of the slurry; and a controller operably connected to the flow meter and the pump. The controller receives signals from the flow meter indicating the rate of flow of the slurry and controls the operational speed of the pump responsive to the flow meter signals. A degasser equipped with a level sensor may be further provided in the system for removing gas bubbles from the slurry.

摘要翻译： 一种用于控制和监测诸如CMP浆料的流体流速的系统，包括用于泵送浆料的泵; 用于监测浆料流速的流量计; 以及可操作地连接到流量计和泵的控制器。 控制器从流量计接收指示泥浆流量的信号，并根据流量计信号控制泵的操作速度。 可以在系统中进一步设置装备有液位传感器的脱气机，以从浆料中除去气泡。

公开(公告)号：US06733373B1

公开(公告)日：2004-05-11

申请号：US09540326

申请日：2000-03-31

申请人： Chia-Ming Yang ,  Chin-Hsin Peng ,  Jian-Lin Hwang ,  Ying-Ho Chen

发明人： Chia-Ming Yang ,  Chin-Hsin Peng ,  Jian-Lin Hwang ,  Ying-Ho Chen

IPC分类号： B24B2100

CPC分类号： B24B37/11 ,  B24B21/04 ,  B24D11/06

摘要： A polishing assembly for use in a linear chemical mechanical polishing apparatus and a method for forming such assembly are described. In the polishing assembly, a plurality of polishing pads are adhesively joined to a top surface of a continuous belt. Each of the plurality of polishing pads is provided with a leading edge which has a lower lip and a trailing edge which has an upper lip. The upper lip of the trailing edge of a first polishing pad covers the lower lip of the leading edge of a second polishing pad when the pads are adhesively bonded to the continuous belt such that the first pad leads the second pad in the direction of rotation for the continuous belt such that the upper lip protects the lower lip to prevent delamination of the pads. The tight seam made possible by the present invention novel tapered joint further prevents water absorption or penetration and therefore prolongs the lifetime of the polishing pads.

摘要翻译： 描述了用于线性化学机械抛光装置的抛光组件和用于形成这种组件的方法。 在抛光组件中，多个抛光垫被粘合地连接到连续带的顶表面。 多个抛光垫中的每一个设置有前缘，该前缘具有下唇和具有上唇的后缘。 当衬垫粘合到连续带上时，第一抛光垫的后缘的上唇覆盖第二抛光垫的前缘的下唇，使得第一垫在旋转方向上引导第二垫， 连续带，使得上唇保护下唇以防止垫的分层。 通过本发明实现的紧密接缝，新颖的锥形接头进一步防止吸水或渗透，从而延长抛光垫的使用寿命。

公开(公告)号：US06926584B2

公开(公告)日：2005-08-09

申请号：US10267614

申请日：2002-10-09

申请人： Chao-Jung Chang ,  Ping-Hsu Chen ,  Chin-Hsin Peng ,  Jui-Cheng Lo ,  Chien-Kuo Lu ,  Chien-Ling Huang

发明人： Chao-Jung Chang ,  Ping-Hsu Chen ,  Chin-Hsin Peng ,  Jui-Cheng Lo ,  Chien-Kuo Lu ,  Chien-Ling Huang

IPC分类号： B24B37/04 ,  B24B57/02 ,  B24B49/00

CPC分类号： B24B37/04 ,  B24B57/02

摘要： A DMHC (dual mode hybrid control) system and method which facilitates enhanced control in the delivery of polishing slurry to a CMP (chemical mechanical polishing) apparatus. The DMHC comprises a linear table and a PID (proportional integrated differential) controller operably connected to a slurry pump provided in a slurry flow conduit which delivers the polishing slurry to the CMP apparatus. A bubble trap and a flowmeter provided in the slurry flow conduit downstream of the slurry pump are operably connected to the PID controller, and the CMP apparatus is located downstream of the flowmeter.

摘要翻译： 一种DMHC（双模式混合控制）系统和方法，其有助于增强抛光浆料输送到CMP（化学机械抛光）装置中的控制。 DMHC包括线性工作台和可操作地连接到浆料泵的PID（比例积分微分）控制器，所述浆料泵设置在将抛光浆料输送到CMP设备的浆料流动管道中。 设置在泥浆泵下游的泥浆流动管道中的气泡阱和流量计可操作地连接到PID控制器，并且CMP设备位于流量计的下游。

公开(公告)号：US06843264B2

公开(公告)日：2005-01-18

申请号：US10323377

申请日：2002-12-18

申请人： Chih-Tien Chang ,  Hsueh-Chang Wu ,  Sunny Wu ,  Chien-Ling Huang ,  Chin-Hsin Peng ,  Mei-Seng Zhou

发明人： Chih-Tien Chang ,  Hsueh-Chang Wu ,  Sunny Wu ,  Chien-Ling Huang ,  Chin-Hsin Peng ,  Mei-Seng Zhou

IPC分类号： C23C16/44 ,  F16K11/10 ,  F16K1/18

CPC分类号： F16K1/223 ,  C23C16/4412 ,  Y10T137/0396 ,  Y10T137/86944 ,  Y10T137/87378 ,  Y10T137/87523

摘要： A new and improved, multi-phase pressure control valve for facilitating quick and accurate attainment and stabilization of gas pressure inside a semiconductor fabrication process chamber such as an etch chamber or CVD chamber. In one embodiment, the multi-phase pressure control valve is a butterfly-type valve which includes outer and inner vanes that independently control flow of gases from a process chamber to a vacuum pump. The larger-diameter outer vane stabilizes gas pressures within a large range, whereas the inner vane stabilizes pressure within a smaller range. In another embodiment, the multi-phase pressure control valve is a gate-type valve which may include a pivoting outer vane and an inner vane slidably disposed with respect to the outer vane for exposing a central gas flow opening in the outer vane.

摘要翻译： 一种新的和改进的多相压力控制阀，用于促进半导体制造工艺室（例如蚀刻室或CVD室）内的气体压力的快速和准确的获得和稳定。 在一个实施例中，多相压力控制阀是蝶形阀，其包括独立地控制气体从处理室到真空泵的流动的外叶片和内叶片。 较大直径的外叶片将气体压力稳定在大范围内，而内叶片将压力稳定在较小的范围内。 在另一个实施例中，多相压力控制阀是门型阀，其可以包括枢转外叶片和相对于外叶片可滑动地设置的用于暴露外叶片中的中心气流开口的内叶片。