摘要:
Electronic devices, such as organic thin film transistors, with improved mobility are disclosed. The semiconducting layer comprises layers or striations of an organic semiconductor and graphene, including alternating layers/striations of such materials. The organic semiconductor and graphene layers interact well together because both materials form lamellar sheets. The presence of graphene enhances mobility by correcting molecular packing defects in the organic semiconductor layers, and the conductivity of graphene can be controlled. Finally, both materials are flexible, allowing for flexible semiconductor layers and transistors.
摘要:
Electronic devices, such as organic thin film transistors, with improved mobility are disclosed. The semiconducting layer comprises layers or striations of an organic semiconductor and graphene, including alternating layers/striations of such materials. The organic semiconductor and graphene layers interact well together because both materials form lamellar sheets. The presence of graphene enhances mobility by correcting molecular packing defects in the organic semiconductor layers, and the conductivity of graphene can be controlled. Finally, both materials are flexible, allowing for flexible semiconductor layers and transistors.
摘要:
A thin film transistor has a semiconducting layer comprising a semiconductor and surface-modified carbon nanotubes. The semiconducting layer has improved charge carrier mobility.
摘要:
A thin film transistor has a semiconducting layer comprising a semiconductor and a mixture enriched in metallic carbon nanotubes. The semiconducting layer has improved charge carrier mobility.
摘要:
A thin film transistor has a semiconducting layer comprising a semiconductor and surface-modified carbon nanotubes. The semiconducting layer has improved charge carrier mobility.
摘要:
A method of forming conductive features on a substrate, the method comprising: providing two or more solutions, wherein a metal nanoparticle solution contains metal nanoparticles with a stabilizer and a destabilizer solution contains a destabilizer that destabilizes the stabilizer, liquid depositing the metal nanoparticle solution and the destabilizer solution onto the substrate, wherein during deposition or following the deposition of the metal nanoparticle solution onto the substrate, the metal nanoparticle and the destabilizer are combined with each other, destabilizing the stabilizer from the surface of the metal nanoparticles with the destabilizer and removing the stabilizer and destabilizer from the substrate by heating the substrate to a temperature below about 180° C. or by washing with the solvent.
摘要:
A thin film transistor has a semiconducting layer comprising a semiconductor and a mixture enriched in metallic carbon nanotubes. The semiconducting layer has improved charge carrier mobility.
摘要:
A process for preparing a palladium nanoparticle ink comprises reacting a reaction mixture comprising a palladium salt, a stabilizer, a reducing agent, and an optional solvent to directly form the palladium nanoparticle ink. During the formation of the palladium nanoparticle ink, the palladium nanoparticles are not isolated from the reaction mixture.
摘要:
An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition comprises a dielectric material and a low surface tension additive. The low surface tension additive allows for the formation of a thin, smooth dielectric layer with fewer pinholes and enhanced device yield. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases.
摘要:
A small molecule semiconductor of Formula (I): wherein R1, R2, R3 and R4 are independently selected from a hydrogen atom, a substituted or unsubstituted alkyl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted ethynyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, an alkoxy group, an alkylthio group, an alkylsilyl group, a cyano group, and a halogen atom, wherein n is 1 or 2, and wherein X is independently S or