ELECTRONIC DEVICE
    1.
    发明申请
    ELECTRONIC DEVICE 有权
    电子设备

    公开(公告)号:US20110084252A1

    公开(公告)日:2011-04-14

    申请号:US12575739

    申请日:2009-10-08

    IPC分类号: H01L51/30 H01L51/40

    摘要: Electronic devices, such as organic thin film transistors, with improved mobility are disclosed. The semiconducting layer comprises layers or striations of an organic semiconductor and graphene, including alternating layers/striations of such materials. The organic semiconductor and graphene layers interact well together because both materials form lamellar sheets. The presence of graphene enhances mobility by correcting molecular packing defects in the organic semiconductor layers, and the conductivity of graphene can be controlled. Finally, both materials are flexible, allowing for flexible semiconductor layers and transistors.

    摘要翻译: 公开了具有改进的移动性的电子器件,例如有机薄膜晶体管。 半导体层包括有机半导体和石墨烯的层或条纹,包括这些材料的交替层/条纹。 有机半导体和石墨烯层相互作用良好,因为两种材料都形成层状片。 石墨烯的存在通过校正有机半导体层中的分子填充缺陷来增强迁移率,并且可以控制石墨烯的导电性。 最后,这两种材料都是灵活的,允许灵活的半导体层和晶体管。

    Electronic device
    2.
    发明授权
    Electronic device 有权
    电子设备

    公开(公告)号:US08164089B2

    公开(公告)日:2012-04-24

    申请号:US12575739

    申请日:2009-10-08

    IPC分类号: H01L51/00

    摘要: Electronic devices, such as organic thin film transistors, with improved mobility are disclosed. The semiconducting layer comprises layers or striations of an organic semiconductor and graphene, including alternating layers/striations of such materials. The organic semiconductor and graphene layers interact well together because both materials form lamellar sheets. The presence of graphene enhances mobility by correcting molecular packing defects in the organic semiconductor layers, and the conductivity of graphene can be controlled. Finally, both materials are flexible, allowing for flexible semiconductor layers and transistors.

    摘要翻译: 公开了具有改进的移动性的电子器件,例如有机薄膜晶体管。 半导体层包括有机半导体和石墨烯的层或条纹,包括这些材料的交替层/条纹。 有机半导体和石墨烯层相互作用良好,因为两种材料都形成层状片。 石墨烯的存在通过校正有机半导体层中的分子填充缺陷来增强迁移率,并且可以控制石墨烯的导电性。 最后,这两种材料都是灵活的,允许灵活的半导体层和晶体管。

    Methods for removing a stabilizer from a metal nanoparticle using a destabilizer
    6.
    发明授权
    Methods for removing a stabilizer from a metal nanoparticle using a destabilizer 有权
    使用去稳定剂从金属纳米颗粒中除去稳定剂的方法

    公开(公告)号:US08048488B2

    公开(公告)日:2011-11-01

    申请号:US12013643

    申请日:2008-01-14

    IPC分类号: B05D5/12

    摘要: A method of forming conductive features on a substrate, the method comprising: providing two or more solutions, wherein a metal nanoparticle solution contains metal nanoparticles with a stabilizer and a destabilizer solution contains a destabilizer that destabilizes the stabilizer, liquid depositing the metal nanoparticle solution and the destabilizer solution onto the substrate, wherein during deposition or following the deposition of the metal nanoparticle solution onto the substrate, the metal nanoparticle and the destabilizer are combined with each other, destabilizing the stabilizer from the surface of the metal nanoparticles with the destabilizer and removing the stabilizer and destabilizer from the substrate by heating the substrate to a temperature below about 180° C. or by washing with the solvent.

    摘要翻译: 一种在基底上形成导电特征的方法,所述方法包括:提供两种或更多种溶液,其中金属纳米颗粒溶液含有金属纳米颗粒与稳定剂,去稳定剂溶液含有使稳定剂不稳定的去稳定剂,液体沉积金属纳米颗粒溶液和 所述去稳定剂溶液在所述基材上,其中在沉积期间或在将所述金属纳米颗粒溶液沉积到所述基材上之后,所述金属纳米颗粒和所述去稳定剂彼此组合,使所述稳定剂从所述不稳定剂的表面不稳定化并除去 通过将基底加热到低于约180℃的温度或通过用溶剂洗涤来从基底上的稳定剂和去稳定剂。

    Method of forming dielectric layer with a dielectric composition
    9.
    发明授权
    Method of forming dielectric layer with a dielectric composition 有权
    用电介质组合物形成电介质层的方法

    公开(公告)号:US08821962B2

    公开(公告)日:2014-09-02

    申请号:US12957461

    申请日:2010-12-01

    摘要: An electronic device, such as a thin-film transistor, includes a substrate and a dielectric layer formed from a dielectric composition. The dielectric composition comprises a dielectric material and a low surface tension additive. The low surface tension additive allows for the formation of a thin, smooth dielectric layer with fewer pinholes and enhanced device yield. In particular embodiments, the dielectric material comprises a lower-k dielectric material and a higher-k dielectric material. When deposited, the lower-k dielectric material and the higher-k dielectric material form separate phases.

    摘要翻译: 诸如薄膜晶体管的电子器件包括由电介质组合物形成的衬底和电介质层。 电介质组合物包括介电材料和低表面张力添加剂。 低表面张力添加剂允许形成具有更少针孔和增强的器件产量的薄的平滑介电层。 在特定实施例中,介电材料包括较低介电常数材料和较高介电常数材料。 当沉积时,较低k电介质材料和较高介电材料形成分离相。