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公开(公告)号：US08926762B2
公开(公告)日：2015-01-06
申请号：US13226216
申请日：2011-09-06
CPC分类号： B08B3/12 , B08B3/02 , H01L21/67028 , H01L21/6704
摘要： Methods and apparatus for a movable megasonic wafer probe. A method is disclosed including positioning a movable probe on a wafer surface, the movable probe having an open bottom portion that exposes a portion of the wafer surface; applying a liquid onto the wafer surface through a bottom portion of the movable probe; and moving the movable probe at a predetermined scan speed to traverse the wafer surface, applying the liquid to the wafer surface while moving over the wafer surface. In additional embodiments the method includes providing a transducer for applying megasonic energy to the wafer surface. Apparatus embodiments are disclosed including the movable megasonic wafer probe.
摘要翻译： 移动式超声波晶片探针的方法和装置。 公开了一种方法，包括将可移动探针定位在晶片表面上，所述可移动探针具有暴露晶片表面的一部分的开放底部; 通过可移动探针的底部将液体施加到晶片表面上; 并且以预定的扫描速度移动可移动探针以穿过晶片表面，同时在晶片表面上移动时将液体施加到晶片表面。 在另外的实施例中，该方法包括提供用于将兆声波能量施加到晶片表面的换能器。 公开了包括可移动兆声晶片探针的装置实施例。
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公开(公告)号：US20130056031A1
公开(公告)日：2013-03-07
申请号：US13226216
申请日：2011-09-06
IPC分类号： B08B7/04
CPC分类号： B08B3/12 , B08B3/02 , H01L21/67028 , H01L21/6704
摘要： Methods and apparatus for a movable megasonic wafer probe. A method is disclosed including positioning a movable probe on a wafer surface, the movable probe having an open bottom portion that exposes a portion of the wafer surface; applying a liquid onto the wafer surface through a bottom portion of the movable probe; and moving the movable probe at a predetermined scan speed to traverse the wafer surface, applying the liquid to the wafer surface while moving over the wafer surface. In additional embodiments the method includes providing a transducer for applying megasonic energy to the wafer surface. Apparatus embodiments are disclosed including the movable megasonic wafer probe.
摘要翻译： 移动式超声波晶片探针的方法和装置。 公开了一种方法，包括将可移动探针定位在晶片表面上，所述可移动探针具有暴露晶片表面的一部分的开放底部; 通过可移动探针的底部将液体施加到晶片表面上; 并且以预定的扫描速度移动可移动探针以穿过晶片表面，同时在晶片表面上移动时将液体施加到晶片表面。 在另外的实施例中，该方法包括提供用于将兆声波能量施加到晶片表面的换能器。 公开了包括可移动兆声晶片探针的装置实施例。
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公开(公告)号：US08518634B2
公开(公告)日：2013-08-27
申请号：US13022931
申请日：2011-02-08
申请人： Ming-Hsi Yeh , Yu-Fu Lin , Shao-Yen Ku , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Ming-Hsi Yeh , Yu-Fu Lin , Shao-Yen Ku , Chi-Ming Yang , Chin-Hsiang Lin
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/32139 , H01L21/823814 , H01L21/823828
摘要： A method of making an integrated circuit is provided. The method includes providing a substrate having a photosensitive layer. The photosensitive layer is exposed to a radiation beam. The exposed photosensitive layer is developed in a first chamber. In the first chamber, a cleaning process is performed on the developed photosensitive layer. The cleaning process includes using a rinse solution including at least one of ozone, hydrogen peroxide, and oxalic acid.
摘要翻译： 提供一种制造集成电路的方法。 该方法包括提供具有感光层的基底。 感光层暴露于辐射束。 曝光的感光层在第一室中显影。 在第一室中，对显影的感光层进行清洁处理。 清洁方法包括使用包括臭氧，过氧化氢和草酸中的至少一种的冲洗溶液。
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公开(公告)号：US20120202156A1
公开(公告)日：2012-08-09
申请号：US13022931
申请日：2011-02-08
申请人： Ming-Hsi Yeh , Yu-Fu Lin , Shao-Yen Ku , Chi-Ming Yang , Chin-Hsiang Lin
发明人： Ming-Hsi Yeh , Yu-Fu Lin , Shao-Yen Ku , Chi-Ming Yang , Chin-Hsiang Lin
IPC分类号： G03F7/20
CPC分类号： G03F7/40 , H01L21/0273 , H01L21/32139 , H01L21/823814 , H01L21/823828
摘要： A method of making an integrated circuit is provided. The method includes providing a substrate having a photosensitive layer. The photosensitive layer is exposed to a radiation beam. The exposed photosensitive layer is developed in a first chamber. In the first chamber, a cleaning process is performed on the developed photosensitive layer. The cleaning process includes using a rinse solution including at least one of ozone, hydrogen peroxide, and oxalic acid.
摘要翻译： 提供一种制造集成电路的方法。 该方法包括提供具有感光层的基底。 感光层暴露于辐射束。 曝光的感光层在第一室中显影。 在第一室中，对显影的感光层进行清洁处理。 清洁方法包括使用包括臭氧，过氧化氢和草酸中的至少一种的冲洗溶液。
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公开(公告)号：US20100178772A1
公开(公告)日：2010-07-15
申请号：US12354394
申请日：2009-01-15
申请人： Simon Su-Horng Lin , Yu-Ming Lee , Shao-Yen Ku , Chi-Ming Yang , Chyi-Shyuan Chern , Chin-Hsiang Lin
发明人： Simon Su-Horng Lin , Yu-Ming Lee , Shao-Yen Ku , Chi-Ming Yang , Chyi-Shyuan Chern , Chin-Hsiang Lin
IPC分类号： H01L21/306
CPC分类号： H01L21/31111 , H01L21/28088 , H01L21/823857 , H01L29/517
摘要： The present disclosure provides a method for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a first metal layer and a first silicon layer by an in-situ deposition process, patterning the first silicon layer to remove a portion overlying the second region, patterning the first metal layer using the patterned first silicon layer as a mask, and removing the patterned first silicon layer including applying a solution. The solution includes a first component having an [F—] concentration greater than 0.01 M, a second component configured to adjust a pH of the solution from about 4.3 to about 6.7, and a third component configured to adjust a potential of the solution to be greater than −1.4 volts.
摘要翻译： 本公开提供了一种用于制造半导体器件的方法。 该方法包括提供具有第一区域和第二区域的半导体衬底，在半导体衬底上形成高k电介质层，通过原位沉积工艺形成第一金属层和第一硅层，图案化第一硅 以去除覆盖在第二区域上的部分，使用图案化的第一硅层作为掩模来图案化第一金属层，以及去除图案化的第一硅层，包括施加溶液。 该溶液包括具有大于0.01M的[F-]浓度的第一组分，被配置为将溶液的pH调节至约4.3至约6.7的第二组分，以及将溶液的电位调节为 大于-1.4伏。
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公开(公告)号：US20120051872A1
公开(公告)日：2012-03-01
申请号：US12869171
申请日：2010-08-26
申请人： Shao-Yen Ku , Chi-Ming Yang , Chiang Ming-Tsao , Yu-Fen Tzeng , Chin-Hsiang Lin
发明人： Shao-Yen Ku , Chi-Ming Yang , Chiang Ming-Tsao , Yu-Fen Tzeng , Chin-Hsiang Lin
IPC分类号： H01L21/677
CPC分类号： H01L21/67011 , H01L21/67155 , H01L21/67201 , H01L21/677 , H01L21/67703 , H01L21/67745 , H01L21/67772 , H01L21/67778 , Y10S414/135 , Y10S414/139
摘要： The present disclosure provides a system and method for processing a semiconductor substrate wherein a substrate is received at a load lock interface. The substrate is transferred from the load lock interface to a process module using a first module configured for unprocessed substrates. A manufacturing process is performed on the substrate within the process module. Thereafter, the substrate is transferred from the process module to the load lock interface using a second module configured for processed substrates.
摘要翻译： 本公开提供了一种用于处理半导体衬底的系统和方法，其中在负载锁定接口处接收衬底。 使用配置为未处理基板的第一模块将基板从加载锁定接口传送到处理模块。 在处理模块内的基板上进行制造工艺。 此后，使用配置成处理的基板的第二模块将基板从处理模块传送到加载锁定接口。
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公开(公告)号：US07776757B2
公开(公告)日：2010-08-17
申请号：US12354394
申请日：2009-01-15
申请人： Simon Su-Horng Lin , Yu-Ming Lee , Shao-Yen Ku , Chi-Ming Yang , Chyi-Shyuan Chern , Chin-Hsiang Lin
发明人： Simon Su-Horng Lin , Yu-Ming Lee , Shao-Yen Ku , Chi-Ming Yang , Chyi-Shyuan Chern , Chin-Hsiang Lin
IPC分类号： H01L21/302
CPC分类号： H01L21/31111 , H01L21/28088 , H01L21/823857 , H01L29/517
摘要： The present disclosure provides a method for fabricating a semiconductor device. The method includes providing a semiconductor substrate having a first region and a second region, forming a high-k dielectric layer over the semiconductor substrate, forming a first metal layer and a first silicon layer by an in-situ deposition process, patterning the first silicon layer to remove a portion overlying the second region, patterning the first metal layer using the patterned first silicon layer as a mask, and removing the patterned first silicon layer including applying a solution. The solution includes a first component having an [F-] concentration greater than 0.01M, a second component configured to adjust a pH of the solution from about 4.3 to about 6.7, and a third component configured to adjust a potential of the solution to be greater than −1.4 volts.
摘要翻译： 本公开提供了一种用于制造半导体器件的方法。 该方法包括提供具有第一区域和第二区域的半导体衬底，在半导体衬底上形成高k电介质层，通过原位沉积工艺形成第一金属层和第一硅层，图案化第一硅 以去除覆盖在第二区域上的部分，使用图案化的第一硅层作为掩模来图案化第一金属层，以及去除图案化的第一硅层，包括施加溶液。 该溶液包括具有大于0.01M的[F-]浓度的第一组分，构成为将溶液的pH调节至约4.3至约6.7的第二组分，以及构成为将溶液的电位调节为 大于-1.4伏。
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公开(公告)号：US08616821B2
公开(公告)日：2013-12-31
申请号：US12869171
申请日：2010-08-26
申请人： Shao-Yen Ku , Chi-Ming Yang , Ming-Tsao Chiang , Yu-Fen Tzeng , Chin-Hsiang Lin
发明人： Shao-Yen Ku , Chi-Ming Yang , Ming-Tsao Chiang , Yu-Fen Tzeng , Chin-Hsiang Lin
IPC分类号： H01L21/67 , H01L21/677
CPC分类号： H01L21/67011 , H01L21/67155 , H01L21/67201 , H01L21/677 , H01L21/67703 , H01L21/67745 , H01L21/67772 , H01L21/67778 , Y10S414/135 , Y10S414/139
摘要： The present disclosure provides a system and method for processing a semiconductor substrate wherein a substrate is received at a load lock interface. The substrate is transferred from the load lock interface to a process module using a first module configured for unprocessed substrates. A manufacturing process is performed on the substrate within the process module. Thereafter, the substrate is transferred from the process module to the load lock interface using a second module configured for processed substrates.
摘要翻译： 本公开提供了一种用于处理半导体衬底的系统和方法，其中在负载锁定接口处接收衬底。 使用配置为未处理基板的第一模块将基板从加载锁定接口传送到处理模块。 在处理模块内的基板上进行制造工艺。 此后，使用配置成处理的基板的第二模块将基板从处理模块传送到加载锁定接口。
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公开(公告)号：US08105851B1
公开(公告)日：2012-01-31
申请号：US12889167
申请日：2010-09-23
申请人： Shao-Yen Ku , Chung-Ru Yang , Chi-Ming Yang
发明人： Shao-Yen Ku , Chung-Ru Yang , Chi-Ming Yang
IPC分类号： H01L21/66
CPC分类号： H01L21/31111 , H01L21/6708 , H01L21/67253
摘要： Provided is a method of removing a nitride material from a semiconductor wafer. The method includes monitoring a silicon concentration level in a chemical solution. The chemical solution may include a phosphoric acid. The method includes adjusting the silicon concentration level in response to the monitoring. The method includes heating the chemical solution. The method includes applying the heated chemical solution to a wafer surface in a manner so that a temperature of the heated chemical solution is within a predefined temperature range throughout the wafer surface. The method includes etching a nitride material of the wafer using the heated chemical solution.
摘要翻译： 提供从半导体晶片去除氮化物材料的方法。 该方法包括监测化学溶液中的硅浓度水平。 化学溶液可以包括磷酸。 该方法包括响应于监测调整硅浓度水平。 该方法包括加热化学溶液。 该方法包括将加热的化学溶液以使得加热的化学溶液的温度在整个晶片表面的预定温度范围内的方式施加到晶片表面。 该方法包括使用加热的化学溶液蚀刻晶片的氮化物材料。
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公开(公告)号：US20130109140A1
公开(公告)日：2013-05-02
申请号：US13414898
申请日：2012-03-08
申请人： Chun-Li Chou , Shao-Yen Ku , Chi-Yun Tseng , Yu-Yen Hsu , Tsai-Pao Su , Hobin Chen , Sheng-Chi Shih
发明人： Chun-Li Chou , Shao-Yen Ku , Chi-Yun Tseng , Yu-Yen Hsu , Tsai-Pao Su , Hobin Chen , Sheng-Chi Shih
IPC分类号： H01L21/336
CPC分类号： H01L21/823412 , H01L21/02057 , H01L21/30608 , H01L21/67017 , H01L21/6708 , H01L21/823425 , H01L29/165 , H01L29/66575 , H01L29/66628 , H01L29/66636 , H01L29/7834 , H01L29/7848
摘要： A system and method for etching a substrate is provided. An embodiment comprises utilizing an inert carrier gas in order to introduce a liquid etchant to a substrate. The inert carrier gas may prevent undesirable chemical reactions from taking place during the etching process, thereby helping to reduce the number of defects that occur to the substrate and other structures during the etching process.
摘要翻译： 提供了蚀刻基板的系统和方法。 一个实施方案包括使用惰性载气以将液体蚀刻剂引入基底。 惰性载气可以防止在蚀刻过程期间发生不期望的化学反应，从而有助于减少在蚀刻过程期间对基底和其它结构发生的缺陷的数量。
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