公开(公告)号：US5221459A

公开(公告)日：1993-06-22

申请号：US874049

申请日：1992-04-24

申请人： Yoko Okano ,  Hiroyoshi Suenaga ,  Toshio Sakiyama ,  Kenji Morita ,  Masanori Ohmura ,  Iwao Ida ,  Hitoshi Nagashima

发明人： Yoko Okano ,  Hiroyoshi Suenaga ,  Toshio Sakiyama ,  Kenji Morita ,  Masanori Ohmura ,  Iwao Ida ,  Hitoshi Nagashima

IPC分类号： C25D11/26 ,  G11B5/84

CPC分类号： G11B5/8404 ,  C25D11/26

摘要： A method of manufacturing a magnetic disk substrate made of titanium, in which chemical etching is performed on a titanium disk for magnetic disk substrate, thereby removing a surface portion thereof having a thickness of at least 2 nm, and the new surface of the titanium disk, formed by the chemical etching, is anodized, thereby forming anodized film on the titanium disk.

公开(公告)号：US5478657A

公开(公告)日：1995-12-26

申请号：US254279

申请日：1994-06-06

申请人： Hiroyoshi Suenaga ,  Iwao Ida ,  Hitoshi Nagashima ,  Masanori Ohmura ,  Naoto Kohshiro ,  Noboru Kurata

发明人： Hiroyoshi Suenaga ,  Iwao Ida ,  Hitoshi Nagashima ,  Masanori Ohmura ,  Naoto Kohshiro ,  Noboru Kurata

IPC分类号： C23C14/02 ,  C23C14/34 ,  C23C18/18 ,  G11B5/73 ,  G11B5/738 ,  G11B5/82 ,  G11B5/84

CPC分类号： G11B5/7315 ,  G11B5/82 ,  G11B5/8404 ,  Y10S428/928 ,  Y10T428/12472 ,  Y10T428/12806 ,  Y10T428/12993

摘要： The object of the present invention is to provide titanium discs to be used as high-density read-while-write magnetic discs. Further object of the present invention is to provide said titanium discs coated with a non-magnetic plated layer.Titanium discs to be used as magnetic discs which satisfy the above object have the following structures: A titanium disc to be used as magnetic disc having the mean height of the peaks from the center line, R.sub.a, of 0.0002 .mu.m to 0.0060 .mu.m and pits on its surface of 25 .mu.m or less in diameter or 5 .mu.m or less in depth. Further, said titanium disc to be used as a magnetic disc is coated with a non-magnetic plated layer with a thickness of 0.09 .mu.m to 5 .mu.m. Moreover, a titanium disc that is most suitable to be used as a magnetic disc is the titanium disc provided with a plated layer of 30/100 or less in a knife-cut peeling test.

摘要翻译： 本发明的目的是提供用作高密度读写磁盘的钛盘。 本发明的另一个目的是提供涂覆有非磁性镀层的所述钛盘。 用作满足上述目的的磁盘的钛盘具有以下结构：用作磁盘的钛盘，其中心线的平均高度Ra为0.0002μm至0.0060μm，以及 其表面的直径为25μm以下，深度为5μm以下。 此外，用作磁盘的所述钛盘涂覆有厚度为0.09μm至5μm的非磁性镀层。 此外，最适合用作磁盘的钛盘是在切割剥离试验中设置有30/100以下的镀层的钛盘。

公开(公告)号：US5270020A

公开(公告)日：1993-12-14

申请号：US862337

申请日：1992-04-02

申请人： Makoto Suzuki ,  Masanori Ohmura ,  Shuzo Fukuda ,  Yoshinobu Shima ,  Takeshi Suzuki ,  Yasuhide Ishiguro ,  Iwao Ida

发明人： Makoto Suzuki ,  Masanori Ohmura ,  Shuzo Fukuda ,  Yoshinobu Shima ,  Takeshi Suzuki ,  Yasuhide Ishiguro ,  Iwao Ida

IPC分类号： C30B15/00 ,  C30B15/02 ,  C30B15/14 ,  C30B15/22

CPC分类号： C30B15/14 ,  Y10S117/90

摘要： A silicon single crystal manufacturing apparatus according to the CZ method which includes a partition member for dividing a quartz crucible into a single crystal growing section and a material melting section and having at least one small hole for permitting the passage of molten silicon, and a heat keeping cover for covering the partition member and the material melting section. The heat keeping cover is made of a sheet of metal selected from the group consisting of Ta, Mo and W and containing Fe 50 ppm or less and Cu 10 ppm or less. The metal sheet includes a surface layer composed of a silicon-enriched layer, and the depth of an area of the silicon-enriched layer in which the content of Si is greater than the contents of Fe and Cu at the same position therein is not less than 10 .mu.m from the surface. The content of Fe in the silicon-enriched layer is not greater than 5 ppm. Thus, this is the apparatus for manufacturing silicon single crystals, being very low in oxidation induced stacking fault (OSF) density.

摘要翻译： 根据CZ方法的硅单晶制造装置，其包括用于将石英坩埚分割成单晶生长部分的分隔部件和材料熔化部分，并且具有至少一个用于允许熔融硅通过的小孔，并且热量 用于覆盖分隔构件和材料熔化部分的保持盖。 保温盖由选自Ta，Mo和W的金属片制成，含有Fe 50ppm以下且Cu为10ppm以下。 金属片包括由富硅层构成的表面层，并且其中Si含量大于其中相同位置处的Fe和Cu含量的富硅层的面积的深度不小于 距离表面10亩以上。 富硅层中的Fe含量不大于5ppm。 因此，这是制造硅单晶的装置，其氧化诱导堆垛层错密度（OSF）非常低。

公开(公告)号：US4957712A

公开(公告)日：1990-09-18

申请号：US457322

申请日：1989-12-27

申请人： Yoshinobu Shima ,  Masanori Ohmura ,  Akira Ohtani ,  Kenji Araki

发明人： Yoshinobu Shima ,  Masanori Ohmura ,  Akira Ohtani ,  Kenji Araki

IPC分类号： C30B15/00 ,  C30B15/12 ,  C30B29/06 ,  H01L21/208

CPC分类号： C30B15/12 ,  Y10S117/90 ,  Y10T117/1052

摘要： An apparatus for manufacturing a single silicon crystal comprises a quartz crucible accomodated into a graphite crucible, a partition member partitioning molten silicon material in the quartz crucible into a single silicon growing portion on the inner side and a material melting portion on the outer side, a heater for maintaining the molten silicon material in the single silicon growing portion at a temperature appropriate for growing the single silicon crystal and for supplying heat for melting the raw materials fed into the material melting portion, and small holes made in the partition member. The partition member is made of an opaque quartz glass. The material melting portion is replenished with the raw materials and single silicon crystal is pulled from the single silicon growing portion. Molton silicon material moves from the material melting portion into the single silicon growing portion through small holes made in the partition member.

公开(公告)号：US5961748A

公开(公告)日：1999-10-05

申请号：US684401

申请日：1996-07-19

申请人： Moriaki Ono ,  Tsuyoshi Shiozaki ,  Masanori Ohmura ,  Yutaka Nagahama ,  Akio Sato ,  Kenichi Iwazaki ,  Yukio Sekine

发明人： Moriaki Ono ,  Tsuyoshi Shiozaki ,  Masanori Ohmura ,  Yutaka Nagahama ,  Akio Sato ,  Kenichi Iwazaki ,  Yukio Sekine

IPC分类号： B21C37/08 ,  B23K26/26 ,  B23K26/32 ,  C22C38/18

CPC分类号： B21C37/08 ,  B23K26/262 ,  B23K26/32 ,  B23K2201/06 ,  B23K2203/04 ,  B23K2203/05 ,  B23K2203/50 ,  Y10S148/909

摘要： A laser-welded steel pipe includes: a steel pipe consisting essentially of C in an amount of 0.01 to 0.5 wt. %, Si in an amount of 1 wt. % or less, Mn in an amount of 0.05 to 2 wt. % and Cr in an amount of 6 wt. % or less; and a weld zone having a melted and solidified metal structure containing carbon and oxygen. The carbon content, �C wt. %!, and the oxygen content, �O wt. %!, in the melted and solidified metal structure satisfies the following equations:�C wt. %!.times.�O wt. %!.ltoreq.0.006, for the steel pipe containing C in an amount of less than 0.2 wt. %,�O wt. %!.ltoreq.0.03, for the steel pipe containing C in an amount of 0.2 wt. % or more.

摘要翻译： 激光焊接钢管包括：基本上由C组成的钢管，其量为0.01〜0.5重量％ ％，Si为1重量％ ％以下，Mn为0.05〜2重量％。 ％和Cr的量为6wt。 ％ 或更少; 以及具有熔融和固化的含有碳和氧的金属结构的焊接区。 碳含量[C wt。 ％]，氧含量[O wt。 ％]，在熔融和固化的金属结构中满足以下等式：[C wt。 ％] x [O wt。 ％]

公开(公告)号：US4848272A

公开(公告)日：1989-07-18

申请号：US162064

申请日：1988-02-29

申请人： Masanori Ohmura ,  Hiroshi Sakama ,  Kenji Araki ,  Hiroshi Kamio ,  Yoshinobu Shima

发明人： Masanori Ohmura ,  Hiroshi Sakama ,  Kenji Araki ,  Hiroshi Kamio ,  Yoshinobu Shima

IPC分类号： H01L21/205 ,  C23C16/458 ,  C30B25/10 ,  C30B25/12

CPC分类号： C30B25/12 ,  C23C16/4588 ,  C30B25/10

摘要： An apparatus for forming epitaxial layers, comprises a first susceptor disposed in a reaction furnace and having an outer periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers, a second susceptor disposed coaxially with the first susceptor such as to surround the first susceptor at a predetermined space therefrom and having an inner periphery constituted by a heat reflection material and capable of supporting a plurality of semiconductor wafers such that these semiconductor wafers face the semiconductor wafers supported by the first susceptor, and a pair of heat reflection members disposed in the reaction furnace between the outer periphery of the first susceptor and the inner periphery of the second susceptor. The first and second susceptors are rotated in mutually opposite directions about a common vertical axis during an epitaxial growing process.

摘要翻译： 一种用于形成外延层的装置，包括：第一基座，设置在反应炉中，具有由热反射材料构成的外周，并且能够支撑多个半导体晶片;与第一基座同轴设置的第二基座， 所述第一基座处于预定的空间，并且具有由热反射材料构成的内周，并且能够支撑多个半导体晶片，使得这些半导体晶片面对由第一基座支撑的半导体晶片，以及一对热反射构件 设置在第一基座的外周和第二基座的内周之间的反应炉中。 在外延生长过程期间，第一和第二感受器在相互垂直的轴线上以相互相反的方向旋转。

公开(公告)号：US6140601A

公开(公告)日：2000-10-31

申请号：US340355

申请日：1999-06-28

申请人： Moriaki Ono ,  Tsuyoshi Shiozaki ,  Masanori Ohmura ,  Yutaka Nagahama ,  Akio Sato ,  Kenichi Iwazaki ,  Yukio Sekine

发明人： Moriaki Ono ,  Tsuyoshi Shiozaki ,  Masanori Ohmura ,  Yutaka Nagahama ,  Akio Sato ,  Kenichi Iwazaki ,  Yukio Sekine

IPC分类号： B21C37/08 ,  B23K26/26 ,  B23K26/32 ,  B23K26/00 ,  C22C38/18

CPC分类号： B21C37/08 ,  B23K26/262 ,  B23K26/32 ,  B23K2201/06 ,  B23K2203/04 ,  B23K2203/05 ,  B23K2203/50 ,  Y10S148/909

摘要： A laser welded steel pipe having a weld zone containing a steel pipe containing 0.01 to 0.2 weight % C, 1 weight % or less S, 0.05 to 2 weight % Mn and 6 weight % or less Mn. The weld zone has a melted and solidified metal structure containing carbon and oxygen which satisfy the following equations:(carbon weight %)(oxygen weight %).ltoreq.0.006for a steel pipe containing carbon in an amount of less than 0.2 weight %, and(oxygen weight %).gtoreq.0.02.A method for manufacturing a laser-welded steel pipe including producing an open pipe made from a hot-rolled steel strip with opposing edge portions facing each other by employing a formal roll, preheating the two edge portions, pressing the two edge portions to butt against each other by using squeeze rolls and welding the butted edge portions by irradiation with a laser beam to heat and melt the two edge portions.

摘要翻译： 一种具有含有钢管的焊接区域的激光焊接钢管，其含有0.01〜0.2重量％的C，1重量％以下的S，0.05〜2重量％的Mn和6重量％以下的Mn。 焊接区域具有含碳和氧的熔融和固化的金属结构，其满足以下等式：对于含有小于0.2重量％的碳的钢管，（碳重量％）（氧重量％）<0.00 = 和（氧重量％）> / = 0.02。一种激光焊接钢管的制造方法，其特征在于，包括：制造由热轧钢带制成的开口管，所述开口管具有相对的边缘部分，通过使用正式辊彼此面对，预热所述两个 边缘部分，通过使用挤压辊挤压两个边缘部分彼此对接并且通过用激光束照射焊接对接边缘部分以加热和熔化两个边缘部分。

公开(公告)号：US4858558A

公开(公告)日：1989-08-22

申请号：US146712

申请日：1988-01-21

申请人： Masanori Ohmura ,  Hiroshi Sakama ,  Kenji Araki

发明人： Masanori Ohmura ,  Hiroshi Sakama ,  Kenji Araki

IPC分类号： C23C16/44 ,  C30B25/12

CPC分类号： C23C16/44 ,  C30B25/12

摘要： A film forming apparatus comprises a reaction furnace having a reaction chamber therein, injection nozzles for introducing a reactive fluid, provided on the reaction furnace, a discharge nozzle for discharging a reactive fluid, provided on the reaction furnace, and a pair of susceptors located in almost vertical position in the reaction chamber and having facing sides separated by a specified distance. The susceptors include a plurality of depressions formed in the respective facing sides thereof for holding a plurality of silicon wafers. The paired susceptors are rotated in mutually opposite directions.