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    Method of Processing Received Signals in a Multi-Input Multi-Output (Mimo) System
    3.
    发明申请
    Method of Processing Received Signals in a Multi-Input Multi-Output (Mimo) System 有权
    在多输入多输出（Mimo）系统中处理接收信号的方法

    公开(公告)号：US20070280360A1

    公开(公告)日：2007-12-06

    申请号：US11576246

    申请日：2005-09-30

    Applicant: Bin Ihm ,  Yong Jin ,  Jin Chun

    Inventor： Bin Ihm ,  Yong Jin ,  Jin Chun

    IPC: H04L27/00

    CPC classification number: H04L25/0248 ,  H04B7/0413 ,  H04B7/0634 ,  H04B7/0639 ,  H04B7/0854 ,  H04L25/0204

    Abstract: A method of processing data by using a plurality of antennas and by applying weight to each signal received via a corresponding antenna in a wireless communication system is disclosed. More specifically, the method includes estimating a channel matrix corresponding to the received signal and dividing columns of the channel matrix into at least two groups. Here, each group includes at least one column. Furthermore, the method includes applying a Singular Value Decomposition (SVD) scheme to each group.

    Abstract translation: 公开了一种通过使用多个天线处理数据并通过对通过无线通信系统中的相应天线接收的每个信号施加加权的方法。 更具体地，该方法包括估计与接收信号相对应的信道矩阵，并将信道矩阵的列划分成至少两组。 这里，每个组包括至少一列。 此外，该方法包括对每个组应用奇异值分解（SVD）方案。

    Method of transmitting feedback information in an orthogononal frequency division multiplexing (OFDM)/ OFDM access (OFDMA) mobile communication system
    4.
    发明申请
    Method of transmitting feedback information in an orthogononal frequency division multiplexing (OFDM)/ OFDM access (OFDMA) mobile communication system 有权
    在正交频分复用（OFDM）/ OFDM接入（OFDMA）移动通信系统中发送反馈信息的方法

    公开(公告)号：US20060111129A1

    公开(公告)日：2006-05-25

    申请号：US11253354

    申请日：2005-10-18

    Applicant: Bin Ihm ,  Jin-Young Chun ,  Yong Jin

    Inventor： Bin Ihm ,  Jin-Young Chun ,  Yong Jin

    IPC: H04Q7/20

    CPC classification number: H04L5/023 ,  H04L5/0023 ,  H04L5/0044 ,  H04L5/0053 ,  H04L5/0094 ,  H04W72/042 ,  H04W72/0426

    Abstract: A method of transmitting feedback information in a wireless communication system is disclosed. More specifically, the method comprises a mobile station (MS) which determines whether to transmit feedback information to a base station (BS) without solicitation from the BS. After determining to do so, the MS transmits a request message to request the BS to allocate an uplink resource for transmitting at least one unsolicited header and thereafter receives the uplink resource allocation from the BS. Lastly, the MS transmits the at least one unsolicited header via the allocated uplink resource.

    Abstract translation: 公开了一种在无线通信系统中发送反馈信息的方法。 更具体地，该方法包括移动台（MS），其确定是否在没有来自BS的请求的情况下向基站（BS）发送反馈信息。 在确定这样做之后，MS发送请求消息以请求BS分配用于发送至少一个未经请求的报头的上行链路资源，然后从BS接收上行链路资源分配。 最后，MS经由所分配的上行链路资源发送至少一个未经请求的报头。

    Semiconductor heterostructure and transistor of HEMT type, in particular for low-frequency low-noise cryogenic applications
    5.
    发明授权
    Semiconductor heterostructure and transistor of HEMT type, in particular for low-frequency low-noise cryogenic applications 有权
    半导体异质结构和HEMT型晶体管，特别适用于低频低噪声低温应用

    公开(公告)号：US08987783B2

    公开(公告)日：2015-03-24

    申请号：US13878948

    申请日：2011-10-07

    Applicant: Yong Jin ,  Ulf Gennser ,  Antonella Cavanna

    Inventor： Yong Jin ,  Ulf Gennser ,  Antonella Cavanna

    IPC: H01L31/072 ,  H01L29/20 ,  H01L29/778

    CPC classification number: H01L29/20 ,  H01L29/778 ,  H01L29/7785

    Abstract: A semiconductor heterostructure having: a substrate (SS); a buffer layer (h); a spacer layer (d, e, f); a barrier layer (b, c); and which may also include a cover layer (a) is provided. The barrier layer is doped (DS); and the barrier and spacer layers are made of one or more semiconductors having wider bandgaps than the one or more materials forming the buffer layer, the heterostructure being characterized in that: the barrier layer comprises a first barrier sublayer (c) in contact with the spacer layer, and a second barrier sublayer (b), distant from the spacer layer; and in that the second barrier sublayer has a wider bandgap than the first barrier sublayer. The invention also relates to a HEMT transistor produced using such a heterostructure and to the use of such a transistor at cryogenic temperatures.

    Abstract translation: 一种半导体异质结构，具有：基板（SS）; 缓冲层（h）; 间隔层（d，e，f）; 阻挡层（b，c）; 并且还可以包括覆盖层（a）。 阻挡层掺杂（DS）; 并且所述阻挡层和间隔层由一个或多个具有比形成所述缓冲层的所述一种或多种材料的带隙更宽的半导体制成，所述异质结构的特征在于：所述阻挡层包括与间隔物接触的第一阻挡子层（c） 层和远离间隔层的第二屏障子层（b）; 并且第二阻挡子层具有比第一势垒子层更宽的带隙。 本发明还涉及使用这种异质结构制造的HEMT晶体管以及在低温下使用这种晶体管。

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