公开(公告)号：US08241512B2

公开(公告)日：2012-08-14

申请号：US12289637

申请日：2008-10-31

申请人： Yong-Woo Lee ,  Young-Mi Lee ,  Min-Chul Chae ,  Dae-Joung Kim ,  Jae-Seung Hwang

发明人： Yong-Woo Lee ,  Young-Mi Lee ,  Min-Chul Chae ,  Dae-Joung Kim ,  Jae-Seung Hwang

IPC分类号： B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00

CPC分类号： H01L21/3146 ,  H01L21/265 ,  H01L21/3143 ,  H01L21/31608 ,  H01L21/3185

摘要： A method of forming an ion implantation mask includes forming a field area on a semiconductor substrate, forming an amorphous carbon layer on the semiconductor substrate, forming a hard mask layer on the amorphous carbon layer, forming an etching mask pattern on the hard mask layer, and etching the hard mask layer and the amorphous carbon layer to expose the field area through the etching mask pattern, wherein etching the hard mask layer and the amorphous carbon layer forms a hard mask layer pattern and an amorphous carbon layer pattern.

摘要翻译： 形成离子注入掩模的方法包括在半导体衬底上形成场区，在半导体衬底上形成非晶碳层，在非晶碳层上形成硬掩模层，在硬掩模层上形成蚀刻掩模图案， 蚀刻硬掩模层和非晶碳层，通过蚀刻掩模图案露出场区，蚀刻硬掩模层和无定形碳层形成硬掩模层图案和无定形碳层图案。

公开(公告)号：US20090117744A1

公开(公告)日：2009-05-07

申请号：US12289637

申请日：2008-10-31

申请人： Yong-Woo Lee ,  Young-Mi Lee ,  Min-Chul Chae ,  Dae-Joung Kim ,  Jae-Seung Hwang

发明人： Yong-Woo Lee ,  Young-Mi Lee ,  Min-Chul Chae ,  Dae-Joung Kim ,  Jae-Seung Hwang

IPC分类号： H01L21/311

CPC分类号： H01L21/3146 ,  H01L21/265 ,  H01L21/3143 ,  H01L21/31608 ,  H01L21/3185

摘要： A method of forming an ion implantation mask includes forming a field area on a semiconductor substrate, forming an amorphous carbon layer on the semiconductor substrate, forming a hard mask layer on the amorphous carbon layer, forming an etching mask pattern on the hard mask layer, and etching the hard mask layer and the amorphous carbon layer to expose the field area through the etching mask pattern, wherein etching the hard mask layer and the amorphous carbon layer forms a hard mask layer pattern and an amorphous carbon layer pattern.

摘要翻译： 形成离子注入掩模的方法包括在半导体衬底上形成场区，在半导体衬底上形成非晶碳层，在非晶碳层上形成硬掩模层，在硬掩模层上形成蚀刻掩模图案， 蚀刻硬掩模层和非晶碳层，通过蚀刻掩模图案露出场区，蚀刻硬掩模层和无定形碳层形成硬掩模层图案和无定形碳层图案。

公开(公告)号：US07745290B2

公开(公告)日：2010-06-29

申请号：US11773372

申请日：2007-07-03

申请人： Jun Seo ,  Jong-Heui Song ,  Jae-Seung Hwang ,  Min-Chul Chae ,  Woo-Jin Cho ,  Yun-Seung Kang ,  Young-Mi Lee

发明人： Jun Seo ,  Jong-Heui Song ,  Jae-Seung Hwang ,  Min-Chul Chae ,  Woo-Jin Cho ,  Yun-Seung Kang ,  Young-Mi Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/66795 ,  H01L29/7851

摘要： A method of fabricating a semiconductor device including a fin field effect transistor (Fin-FET) includes forming sacrificial bars on a semiconductor substrate, patterning the sacrificial bars to form sacrificial islands on the semiconductor substrate, forming a device isolation layer to fill a space between the sacrificial islands, selectively removing the sacrificial islands to expose the semiconductor substrate below the sacrificial islands, and anisotropically etching the exposed semiconductor substrate using the device isolation layer as an etch mask to form a recessed channel region. The recessed channel region allows the channel width and channel length of a transistor to be increased, thereby reducing the occurrence of short channel effects and narrow channel effects in highly integrated semiconductor devices.

摘要翻译： 一种制造包括鳍状场效应晶体管（Fin-FET）的半导体器件的方法包括：在半导体衬底上形成牺牲棒，对牺牲棒进行构图以在半导体衬底上形成牺牲岛，形成器件隔离层以填充第 牺牲岛，选择性地去除牺牲岛以将牺牲岛下方的半导体衬底暴露出来，并且使用器件隔离层作为蚀刻掩模来各向异性蚀刻暴露的半导体衬底以形成凹陷沟道区。 凹陷沟道区域允许晶体管的沟道宽度和沟道长度增加，从而减少在高度集成的半导体器件中的短沟道效应和窄沟道效应的发生。

公开(公告)号：US07534704B2

公开(公告)日：2009-05-19

申请号：US11449839

申请日：2006-06-09

申请人： Jae-Kyu Ha ,  Jun Seo ,  Min-Chul Chae ,  Yong-Sun Ko ,  Young-Mi Lee ,  Jae-Seung Hwang

发明人： Jae-Kyu Ha ,  Jun Seo ,  Min-Chul Chae ,  Yong-Sun Ko ,  Young-Mi Lee ,  Jae-Seung Hwang

IPC分类号： H01L21/20

CPC分类号： H01L21/84 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02667 ,  H01L21/76262 ,  H01L27/1203

摘要： In a thin layer structure and a method of forming the same, a first preliminary insulation pattern is formed on a substrate and includes a first opening exposing the substrate. One or more preliminary seed patterns including single crystalline silicon are formed in the first opening. A second insulation layer is formed on the first preliminary insulation pattern and the one or more preliminary seed patterns. A second insulation pattern, a first insulation pattern and one or more seed patterns are formed by etching the first and second insulation layers and the one or more preliminary seed patterns. The second insulation pattern includes a second opening having a flat bottom portion. A single crystalline silicon pattern is formed in the second opening, wherein a central thickness of the single crystalline silicon pattern is substantially identical to a peripheral thickness thereof, thereby reducing or preventing a thinning defect in a semiconductor device.

摘要翻译： 在薄层结构及其形成方法中，在基板上形成第一预备绝缘图案，并且包括暴露基板的第一开口。 在第一开口中形成包括单晶硅的一种或多种初步种子图案。 在第一预备绝缘图案和一个或多个初步种子图案上形成第二绝缘层。 通过蚀刻第一和第二绝缘层和一个或多个初步种子图案来形成第二绝缘图案，第一绝缘图案和一个或多个种子图案。 第二绝缘图案包括具有平坦底部的第二开口。 在第二开口中形成单晶硅图案，其中单晶硅图案的中心厚度与其周边厚度基本相同，从而减少或防止半导体器件中的变薄缺陷。

公开(公告)号：US20060286298A1

公开(公告)日：2006-12-21

申请号：US11449839

申请日：2006-06-09

申请人： Jae-Kyu Ha ,  Jun Seo ,  Min-Chul Chae ,  Yong-Sun Ko ,  Young-Mi Lee ,  Jae-Seung Hwang

发明人： Jae-Kyu Ha ,  Jun Seo ,  Min-Chul Chae ,  Yong-Sun Ko ,  Young-Mi Lee ,  Jae-Seung Hwang

IPC分类号： B05D5/00

CPC分类号： H01L21/84 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L21/02667 ,  H01L21/76262 ,  H01L27/1203

摘要： In a thin layer structure and a method of forming the same, a first preliminary insulation pattern is formed on a substrate and includes a first opening exposing the substrate. One or more preliminary seed patterns including single crystalline silicon are formed in the first opening. A second insulation layer is formed on the first preliminary insulation pattern and the one or more preliminary seed patterns. A second insulation pattern, a first insulation pattern and one or more seed patterns are formed by etching the first and second insulation layers and the one or more preliminary seed patterns. The second insulation pattern includes a second opening having a flat bottom portion. A single crystalline silicon pattern is formed in the second opening, wherein a central thickness of the single crystalline silicon pattern is substantially identical to a peripheral thickness thereof, thereby reducing or preventing a thinning defect in a semiconductor device.

公开(公告)号：US07531450B2

公开(公告)日：2009-05-12

申请号：US11759788

申请日：2007-06-07

申请人： Yun-Seung Kang ,  Jun Seo ,  Min-Chul Chae ,  Jae-Seung Hwang ,  Sung-Un Kwon ,  Woo-Jin Cho

发明人： Yun-Seung Kang ,  Jun Seo ,  Min-Chul Chae ,  Jae-Seung Hwang ,  Sung-Un Kwon ,  Woo-Jin Cho

IPC分类号： H01L21/44

CPC分类号： H01L27/11551 ,  H01L21/31144 ,  H01L21/743 ,  H01L27/0688 ,  H01L27/11526

摘要： Provided is a method of fabricating a semiconductor device having a contact hole with a high aspect-ratio. The method includes: sequentially forming a lower pattern and an upper layer on a semiconductor substrate; sequentially forming a lower mask layer and an upper mask layer on the upper layer; sequentially patterning the lower and upper mask layers to form a hole exposing a top surface of the upper layer on the lower pattern; using the upper mask layer as an etching mask to anisotropically etch the exposed top surface to form an upper contact hole exposing a top surface of the lower pattern; and using the lower mask layer as an etching mask to anisotropically etch the exposed lower pattern to form a lower contact hole in the lower pattern, the lower contact hole extending from the upper contact hole.

摘要翻译： 提供一种制造具有高纵横比的接触孔的半导体器件的方法。 该方法包括：在半导体衬底上依次形成下图案和上层; 在上层依次形成下掩模层和上掩模层; 顺序地图案化上下掩模层以形成暴露下图案上的上层的顶表面的孔; 使用上掩模层作为蚀刻掩模以各向异性地蚀刻暴露的顶表面以形成暴露下图案的顶表面的上接触孔; 并且使用下掩模层作为蚀刻掩模来各向异性蚀刻暴露的下图案以在下图案中形成下接触孔，下接触孔从上接触孔延伸。

公开(公告)号：US20060163738A1

公开(公告)日：2006-07-27

申请号：US11333110

申请日：2006-01-17

申请人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

发明人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

IPC分类号： H01L23/48

CPC分类号： H01L21/76876 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76895 ,  H01L29/66477 ,  Y10T428/24331

摘要： A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling member. The insulation member has an opening having a dual damascene shape. The filling member is formed on a side face of the opening. The single crystal member contacts the filling member. The single crystal member fills up the opening. In order to form a dual damascene structure, an insulating member having an opening partially filled with a preliminary single crystal member is formed. The filling member is formed on a side face of the opening. The preliminary single crystal member epitaxially grows to fill up the opening. Because the filling member is positioned between the single crystal member and the insulation member, void formation may be reduced between the single crystal member and the insulation member.

摘要翻译： 公开了一种双镶嵌结构和形成双镶嵌结构的方法。 双镶嵌结构包括绝缘构件，单晶构件和填充构件。 绝缘构件具有双镶嵌形状的开口。 填充构件形成在开口的侧面上。 单晶构件接触填充构件。 单晶构件填充开口。 为了形成双镶嵌结构，形成具有部分填充有初级单晶构件的开口的绝缘构件。 填充构件形成在开口的侧面上。 外延的初步单晶构件生长以填满开口。 由于填充构件位于单晶构件和绝缘构件之间，所以在单晶构件和绝缘构件之间可能会减小空隙形成。

公开(公告)号：US20080149021A1

公开(公告)日：2008-06-26

申请号：US12043576

申请日：2008-03-06

申请人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

发明人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

IPC分类号： C30B25/02

CPC分类号： H01L21/76876 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76895 ,  H01L29/66477 ,  Y10T428/24331

摘要： A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling member. The insulation member has an opening having a dual damascene shape. The filling member is formed on a side face of the opening. The single crystal member contacts the filling member. The single crystal member fills up the opening. In order to form a dual damascene structure, an insulating member having an opening partially filled with a preliminary single crystal member is formed. The filling member is formed on a side face of the opening. The preliminary single crystal member epitaxially grows to fill up the opening. Because the filling member is positioned between the single crystal member and the insulation member, void formation may be reduced between the single crystal member and the insulation member.

摘要翻译： 公开了一种双镶嵌结构和形成双镶嵌结构的方法。 双镶嵌结构包括绝缘构件，单晶构件和填充构件。 绝缘构件具有双镶嵌形状的开口。 填充构件形成在开口的侧面上。 单晶构件接触填充构件。 单晶构件填充开口。 为了形成双镶嵌结构，形成具有部分填充有初级单晶构件的开口的绝缘构件。 填充构件形成在开口的侧面上。 外延的初步单晶构件生长以填满开口。 由于填充构件位于单晶构件和绝缘构件之间，所以在单晶构件和绝缘构件之间可能会减小空隙形成。

公开(公告)号：US20080152866A1

公开(公告)日：2008-06-26

申请号：US12043563

申请日：2008-03-06

申请人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

发明人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

IPC分类号： B32B3/10

CPC分类号： H01L21/76876 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76895 ,  H01L29/66477 ,  Y10T428/24331

摘要： A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling member. The insulation member has an opening having a dual damascene shape. The filling member is formed on a side face of the opening. The single crystal member contacts the filling member. The single crystal member fills up the opening. In order to form a dual damascene structure, an insulating member having an opening partially filled with a preliminary single crystal member is formed. The filling member is formed on a side face of the opening. The preliminary single crystal member epitaxially grows to fill up the opening. Because the filling member is positioned between the single crystal member and the insulation member, void formation may be reduced between the single crystal member and the insulation member.

摘要翻译： 公开了一种双镶嵌结构和形成双镶嵌结构的方法。 双镶嵌结构包括绝缘构件，单晶构件和填充构件。 绝缘构件具有双镶嵌形状的开口。 填充构件形成在开口的侧面上。 单晶构件接触填充构件。 单晶构件填充开口。 为了形成双镶嵌结构，形成具有部分填充有初级单晶构件的开口的绝缘构件。 填充构件形成在开口的侧面上。 外延的初步单晶构件生长以填满开口。 由于填充构件位于单晶构件和绝缘构件之间，所以在单晶构件和绝缘构件之间可能会减小空隙形成。

公开(公告)号：US08372198B2

公开(公告)日：2013-02-12

申请号：US12043576

申请日：2008-03-06

申请人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

发明人： Jun Seo ,  Jong-Hyuk Kim ,  Jong-Heui Song ,  Yung-Jun Kim ,  Min-Chul Chae

IPC分类号： C30B21/02

CPC分类号： H01L21/76876 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02645 ,  H01L21/28525 ,  H01L21/28562 ,  H01L21/76808 ,  H01L21/76831 ,  H01L21/76879 ,  H01L21/76895 ,  H01L29/66477 ,  Y10T428/24331

摘要： A dual damascene structure and a method of forming a dual damascene structure are disclosed. The dual damascene structure includes an insulation member, a single crystal member and a filling member. The insulation member has an opening having a dual damascene shape. The filling member is formed on a side face of the opening. The single crystal member contacts the filling member. The single crystal member fills up the opening. In order to form a dual damascene structure, an insulating member having an opening partially filled with a preliminary single crystal member is formed. The filling member is formed on a side face of the opening. The preliminary single crystal member epitaxially grows to fill up the opening. Because the filling member is positioned between the single crystal member and the insulation member, void formation may be reduced between the single crystal member and the insulation member.

摘要翻译： 公开了一种双镶嵌结构和形成双镶嵌结构的方法。 双镶嵌结构包括绝缘构件，单晶构件和填充构件。 绝缘构件具有双镶嵌形状的开口。 填充构件形成在开口的侧面上。 单晶构件接触填充构件。 单晶构件填充开口。 为了形成双镶嵌结构，形成具有部分填充有初级单晶构件的开口的绝缘构件。 填充构件形成在开口的侧面上。 外延的初步单晶构件生长以填满开口。 由于填充构件位于单晶构件和绝缘构件之间，所以在单晶构件和绝缘构件之间可能会减小空隙形成。