Explosive reactive armor with momentum transfer mechanism

    公开(公告)号:US20060086243A1

    公开(公告)日:2006-04-27

    申请号:US11109206

    申请日:2005-04-19

    IPC分类号: F41H11/00

    CPC分类号: F41H5/007

    摘要: Disclosed is an explosive reactive armor with a momentum transfer mechanism by developing a new protection mechanism in which a momentum transfer mechanism by detonation of a reactive material is integrated with a thickness increase mechanism. In this explosive reactive armor with the momentum transfer mechanism, a flying element always travels with a vertical angle or a slant angle with respect to an ongoing direction of the threat such that a momentum of the flying element is transferred to the threat effectively. As a result of this, shear force is induced over an entire length of the threat and thus the threat can be destroyed. Therefore, a protection effect can always be achieved regardless of an impact angle of the threat. Also, a protection capability can be achieved even in case of a vertical impact which is the most vulnerable case for the existing explosive reactive armor.

    Explosive reactive armor with momentum transfer mechanism
    2.
    发明授权
    Explosive reactive armor with momentum transfer mechanism 有权
    具有动力传递机制的爆炸反应装甲

    公开(公告)号:US07540229B2

    公开(公告)日:2009-06-02

    申请号:US11109206

    申请日:2005-04-19

    IPC分类号: F41H5/007

    CPC分类号: F41H5/007

    摘要: Disclosed is an explosive reactive armor with a momentum transfer mechanism by developing a new protection mechanism in which a momentum transfer mechanism by detonation of a reactive material is integrated with a thickness increase mechanism. In this explosive reactive armor with the momentum transfer mechanism, a flying element always travels with a vertical angle or a slant angle with respect to an ongoing direction of the threat such that a momentum of the flying element is transferred to the threat effectively. As a result of this, shear force is induced over an entire length of the threat and thus the threat can be destroyed. Therefore, a protection effect can always be achieved regardless of an impact angle of the threat. Also, a protection capability can be achieved even in case of a vertical impact which is the most vulnerable case for the existing explosive reactive armor.

    摘要翻译: 公开了一种具有动量传递机构的爆炸反应装甲,通过开发新的保护机构,其中通过爆炸反应性材料的动量传递机构与厚度增加机构结合。 在具有动量传递机构的这种爆炸反应装甲中,飞行元件总是相对于威胁的正在进行的方向以垂直角度或倾斜角行进,使得飞行元件的动量有效地转移到威胁中。 因此,在威胁的整个长度上产生剪切力,从而可以破坏威胁。 因此,无论威胁的影响角度如何,都可以始终实现保护效果。 此外,即使在垂直冲击的情况下也可以实现保护能力,这是现有爆炸反应装甲最易受伤害的情况。

    Stereophonic sound reproduction system for compensating low frequency signal and method thereof
    3.
    发明授权
    Stereophonic sound reproduction system for compensating low frequency signal and method thereof 有权
    用于补偿低频信号的立体声声音再现系统及其方法

    公开(公告)号:US08085939B2

    公开(公告)日:2011-12-27

    申请号:US11394467

    申请日:2006-03-30

    IPC分类号: H04R5/00

    CPC分类号: H04R5/04

    摘要: A stereophonic sound reproduction system for compensating a low frequency signal and a method thereof, wherein a mono component signal for compensating low frequency signals which are attenuated when removing a crosstalk of inputted left and right signals inputted is calculated using an average value between the left and right signals, left and right compensation gains which are inversely proportional to an absolute value of a power difference value between the first left and right signals, an amplitude of the calculated mono component signal is controlled according to the left and right compensation gains, and thereafter the mono component signal with the controlled amplitude is added to the left and right signals when removing the crosstalk, whereby the left and right signals from which the crosstalk is removed and to which the mono component signal is added are outputted through left and right speakers to thus prevent distortion of the low frequency signals of original stereophonic sound with maintaining a stereophonic sound effect.

    摘要翻译: 一种用于补偿低频信号的立体声再现系统及其方法,其中用于补偿在输入的输入的左和右信号的串扰消除时被衰减的低频信号的单分量信号是使用左和右 右信号,与第一左右信号之间的功率差值的绝对值成反比的左右补偿增益,根据左右补偿增益来控制计算出的单分量信号的幅度,之后 当去除串扰时,具有受控幅度的单分量信号被加到左和右信号中,由此除去串扰的左和右信号并将单分量信号相加到左和右信号通过左和右扬声器输出到 从而防止原始立体声的低频信号失真 声音保持立体声效果。

    Stereophonic sound reproduction system for compensating low frequency signal and method thereof
    4.
    发明申请
    Stereophonic sound reproduction system for compensating low frequency signal and method thereof 有权
    用于补偿低频信号的立体声声音再现系统及其方法

    公开(公告)号:US20060239464A1

    公开(公告)日:2006-10-26

    申请号:US11394467

    申请日:2006-03-30

    IPC分类号: H04R5/00

    CPC分类号: H04R5/04

    摘要: A stereophonic sound reproduction system for compensating a low frequency signal and a method thereof, wherein a mono component signal for compensating low frequency signals which are attenuated when removing a crosstalk of inputted left and right signals inputted is calculated using an average value between the left and right signals, left and right compensation gains which are inversely proportional to an absolute value of a power difference value between the first left and right signals, an amplitude of the calculated mono component signal is controlled according to the left and right compensation gains, and thereafter the mono component signal with the controlled amplitude is added to the left and right signals when removing the crosstalk, whereby the left and right signals from which the crosstalk is removed and to which the mono component signal is added are outputted through left and right speakers to thus prevent distortion of the low frequency signals of original stereophonic sound with maintaining a stereophonic sound effect.

    摘要翻译: 一种用于补偿低频信号的立体声再现系统及其方法,其中用于补偿在输入的输入的左和右信号的串扰消除时被衰减的低频信号的单分量信号是使用左和右 右信号,与第一左右信号之间的功率差值的绝对值成反比的左右补偿增益,根据左右补偿增益来控制计算出的单分量信号的幅度,之后 当去除串扰时,具有受控幅度的单分量信号被加到左和右信号中,由此除去串扰的左和右信号并将单分量信号相加到左和右信号通过左和右扬声器输出到 从而防止原始立体声的低频信号失真 声音保持立体声效果。

    Mobile terminal and user interface of mobile terminal
    5.
    发明授权
    Mobile terminal and user interface of mobile terminal 有权
    移动终端的移动终端和用户界面

    公开(公告)号:US08497882B2

    公开(公告)日:2013-07-30

    申请号:US13562930

    申请日:2012-07-31

    IPC分类号: G09G5/00

    摘要: A mobile terminal including a display unit configured to display information; a touch layer configured to sense a touch input with respect to the display unit; a controller cooperating with the display unit and the touch layer and configured to: sense a touch input onto the display unit after the display unit displays the information, set a region of the display unit that includes a portion corresponding to the sensed touch input, and display on the display unit one or more graphical images corresponding to one or more selectable functions related to one or more contents displayed in the region. Further, the one or more selectable functions are matched to the corresponding one or more graphical images.

    摘要翻译: 一种移动终端,包括被配置为显示信息的显示单元; 触摸层,被配置为感测相对于所述显示单元的触摸输入; 与所述显示单元和所述触摸层协作的控制器,被配置为:在所述显示单元显示所述信息之后,感测到所述显示单元上的触摸输入,设置包括与所感测的触摸输入相对应的部分的所述显示单元的区域,以及 在所述显示单元上显示与所述区域中显示的一个或多个内容相关的一个或多个可选择功能对应的一个或多个图形图像。 此外,一个或多个可选功能与相应的一个或多个图形图像相匹配。

    Method for forming a lower electrode for use in a semiconductor device

    公开(公告)号:US06465300B2

    公开(公告)日:2002-10-15

    申请号:US09855848

    申请日:2001-05-16

    IPC分类号: H01L218242

    摘要: A method for manufacturing a semiconductor device including steps of a) preparing an active matrix provided with at least one diffusion region and an insulating layer formed thereon; b) patterning the insulating layer into a predetermined configuration, thereby exposing the diffusion regions; c) forming metal silicide films on the exposed diffusion regions; d) forming a metal layer on the exposed diffusion regions and the insulating layer; e) patterning the metal layer to a preset configuration, thereby obtaining supporting members on the metal silicide films; f) forming bottom electrodes on the supporting members; and g) forming capacitor dielectrics and top electrodes on the bottom electrodes.

    Force feed back manipulator employing wires and spools
    7.
    发明授权
    Force feed back manipulator employing wires and spools 失效
    强制反馈机械手采用电线和线轴

    公开(公告)号:US6128970A

    公开(公告)日:2000-10-10

    申请号:US773869

    申请日:1996-12-27

    申请人: Jeong-Tae Kim

    发明人: Jeong-Tae Kim

    IPC分类号: B25J17/00 B25J11/00 G05G9/047

    摘要: A manipulator having six degrees of freedom includes a moving plate having six moving points arranged with substantial equal angles therebetween, an upper fixed plate having six upper fixed points arranged with substantial equal angles therebetween, the upper fixed plate being positioned above the moving plate and being spaced apart from the moving plate, a lower fixed plate having six lower fixed points arranged with substantial equal angles therebetween, the lower fixed plate being positioned under the moving plate and being spaced apart from the moving plate. In order to connect one moving point to one upper fixed point and one lower fixed point, respectively, thereby enabling the moving plate to move relatively to the upper and the lower fixed plates with six degrees of freedom and to detect distance variations between the one moving point and the one upper fixed point, and between the one moving point and the one lower fixed point, when the moving plate moves, the manipulator includes a first spool, a second spool, a first wire, a second wire, a first shaft encoder and a second shaft encoder.

    摘要翻译: 具有六个自由度的机械手包括具有在其间具有大致相等角度排列的六个移动点的移动板,具有六个上固定点的上固定板,其上具有大致相等的角度,上固定板位于移动板的上方, 与移动板间隔开的下固定板,其具有六个下固定点,其间具有大致相等的角度,下固定板位于移动板下方并与移动板间隔开。 为了将一个移动点分别连接到一个上固定点和一个下固定点,从而使得移动板能够以六个自由度相对于上固定板和下固定板移动,并且检测一个移动 点和一个上固定点,以及在一个移动点和一个下固定点之间,当移动板移动时,操纵器包括第一卷轴,第二卷轴,第一线,第二线,第一轴编码器 和第二轴编码器。

    Methods of forming metal nitride layers, and methods of forming semiconductor structures having metal nitride layers
    8.
    发明授权
    Methods of forming metal nitride layers, and methods of forming semiconductor structures having metal nitride layers 失效
    形成金属氮化物层的方法,以及形成具有金属氮化物层的半导体结构的方法

    公开(公告)号:US07300887B2

    公开(公告)日:2007-11-27

    申请号:US11227542

    申请日:2005-09-15

    IPC分类号: H01L21/31

    摘要: Methods of forming metal nitride layers on a substrate include reacting a metal source gas with a nitrogen source gas in a process chamber to form a metal nitride layer on the substrate. The process chamber may have an atmosphere having a pressure of about 0.1 mTorr to about 5 mTorr and a temperature of about 200° C. to about 450° C. A ratio of the flow rate of the metal source gas to the flow rate of the nitrogen source gas may be “1” or more. An interlayer insulating layer may be formed on the semiconductor substrate prior to formation of the metal nitride layer. Some methods include forming a contact hole in the interlayer insulating layer to expose a portion of the semiconductor substrate prior to forming the metal nitride layer

    摘要翻译: 在基板上形成金属氮化物层的方法包括在处理室中使金属源气体与氮源气体反应,以在衬底上形成金属氮化物层。 处理室可以具有约0.1mTorr至约5mTorr的压力和约200℃至约450℃的温度的气氛。金属源气体的流量与流动速率的比率 氮源气体可以为“1”以上。 在形成金属氮化物层之前,可以在半导体衬底上形成层间绝缘层。 一些方法包括在层间绝缘层中形成接触孔,以在形成金属氮化物层之前露出半导体衬底的一部分

    Methods of forming metal nitride layers, and methods of forming semiconductor structures having metal nitride layers
    9.
    发明申请
    Methods of forming metal nitride layers, and methods of forming semiconductor structures having metal nitride layers 失效
    形成金属氮化物层的方法,以及形成具有金属氮化物层的半导体结构的方法

    公开(公告)号:US20060115984A1

    公开(公告)日:2006-06-01

    申请号:US11227542

    申请日:2005-09-15

    IPC分类号: H01L21/4763

    摘要: Methods of forming metal nitride layers on a substrate include reacting a metal source gas with a nitrogen source gas in a process chamber to form a metal nitride layer on the substrate. The process chamber may have an atmosphere having a pressure of about 0.1 mTorr to about 5 mTorr and a temperature of about 200° C. to about 450° C. A ratio of the flow rate of the metal source gas to the flow rate of the nitrogen source gas may be “1” or more. An interlayer insulating layer may be formed on the semiconductor substrate prior to formation of the metal nitride layer. Some methods include forming a contact hole in the interlayer insulating layer to expose a portion of the semiconductor substrate prior to forming the metal nitride layer

    摘要翻译: 在基板上形成金属氮化物层的方法包括在处理室中使金属源气体与氮源气体反应,以在衬底上形成金属氮化物层。 处理室可以具有约0.1mTorr至约5mTorr的压力和约200℃至约450℃的温度的气氛。金属源气体的流量与流动速率的比率 氮源气体可以为“1”以上。 在形成金属氮化物层之前,可以在半导体衬底上形成层间绝缘层。 一些方法包括在层间绝缘层中形成接触孔,以在形成金属氮化物层之前露出半导体衬底的一部分