公开(公告)号：US20070158391A1

公开(公告)日：2007-07-12

申请号：US11590249

申请日：2006-10-30

申请人： Yoon-Chul Son ,  Jong-Yeon Kim ,  Jin Yu

发明人： Yoon-Chul Son ,  Jong-Yeon Kim ,  Jin Yu

IPC分类号： A47J36/02

CPC分类号： H01L24/10 ,  B23K35/262 ,  H01L24/13 ,  H01L24/81 ,  H01L2224/13 ,  H01L2224/13139 ,  H01L2224/16 ,  H01L2224/81193 ,  H01L2224/8121 ,  H01L2224/81815 ,  H01L2924/00013 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01327 ,  H01L2924/014 ,  H05K3/244 ,  H05K3/3463 ,  H05K2203/072 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00

摘要： The present invention relates, generally, to methods for joining an electronic part finished with nickel and an electronic part finished with electroless nickel, which can prevent a brittle fracture, more particularly, to a method for joining an electronic part finished with nickel and an electronic part finished with electroless nickel with a solder by controlling the composition of the solder to prevent a brittle fracture occurring at the solder joining portion.A method for joining an electronic part finished with nickel and an electronic part finished with electroless nickel, comprising: (1) reflowing solder to a nickel portion of an electronic part finished with nickel to obtain an electronic part where an intermetallic compound and a solder are formed; (2) obtaining an electronic part finished with an eletroless nickel, of which the nickel portion is connected with the solder; and (3) solder-joining an electronic part finished with nickel obtained in the step (1) and the electronic part finished with electroless nickel obtained in the step (2).

摘要翻译： 本发明一般地涉及将镍完成的电子部件和能够防止脆性断裂的化学镀镍的电子部件接合的方法，更具体地说，涉及一种用镍和电子制成的电子部件的接合方法 通过控制焊料的组成来防止在焊料接合部分发生脆性断裂，通过焊料完成无电镀镍。 一种将镍完成的电子部件和用非电解镍完成的电子部件的接合方法，其特征在于，包括：（1）将焊料回流到镍完成的电子零件的镍部分，得到金属间化合物和焊料的电子部件 形成 （2）获得用无电镍完成的电子部件，其中镍部分与焊料连接; 和（3）将步骤（1）中得到的镍完成的电子部件与在步骤（2）中获得的化学镀镍的电子部件进行焊接接合。

公开(公告)号：US20120119359A1

公开(公告)日：2012-05-17

申请号：US13240302

申请日：2011-09-22

申请人： Yun-Hyeok Im ,  Jong-Yeon Kim ,  Tae-Je Cho ,  Un-Byoung Kang

发明人： Yun-Hyeok Im ,  Jong-Yeon Kim ,  Tae-Je Cho ,  Un-Byoung Kang

IPC分类号： H01L23/485

CPC分类号： H01L24/81 ,  H01L23/3128 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/11001 ,  H01L2224/13025 ,  H01L2224/13075 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2224/05552 ,  H01L2924/00

摘要： Provided are a bump structure includes a first bump and a second bump, a semiconductor package including the same, and a method of manufacturing the same. The bump structure includes: first bump provided on a connection pad of a substrate, the first bump including a plurality of nano-wires extending from the connection pad and a body connecting end portions of the plurality of nano-wires; and a second bump provided on the body of the first bump.

摘要翻译： 提供一种凸块结构，包括第一凸块和第二凸块，包括该凸块的半导体封装及其制造方法。 凸块结构包括：设置在基板的连接焊盘上的第一凸块，所述第一凸块包括从所述连接焊盘延伸的多个纳米线和连接所述多个纳米线的端部的主体; 以及设置在第一凸块的主体上的第二凸块。

公开(公告)号：US20130267558A1

公开(公告)日：2013-10-10

申请号：US13880792

申请日：2011-10-07

申请人： Jong-Yeon Kim ,  Jong-Ryul Eun ,  Youn-Ju Lee

发明人： Jong-Yeon Kim ,  Jong-Ryul Eun ,  Youn-Ju Lee

IPC分类号： A61K31/4709

CPC分类号： A61K31/4709 ,  A61K31/41 ,  A61K31/47

摘要： Provided is a pharmaceutical composition for the treatment and prevention of alcoholic liver diseases, including cilostazol as an active ingredient. Cilostazol inhibits expression levels of TNF-α and FAS (fatty acid synthase) gene in a concentration-dependent manner, and also significantly inhibits the activity of caspase-3. Accordingly, cilostazol shows superior effects for the treatment or prevention of alcoholic liver diseases, in particular, alcoholic hepatitis compared to pentoxifylline which is conventionally used as a therapeutic agent for the treatment for alcoholic hepatitis. Thus, cilostazol is suitable for use as a drug for the treatment or prevention of alcoholic hepatitis.

摘要翻译： 提供了用于治疗和预防酒精性肝病的药物组合物，其包括西洛他唑作为活性成分。 西洛他唑以浓度依赖性方式抑制TNF-α和FAS（脂肪酸合成酶）基因的表达水平，并且还显着抑制半胱天冬酶-3的活性。 因此，与通常用作治疗酒精性肝炎的治疗剂的己酮可可碱相比，西洛他唑对酒精性肝病，特别是酒精性肝炎的治疗或预防具有优异的效果。 因此，西洛他唑适用于治疗或预防酒精性肝炎的药物。

公开(公告)号：US08921918B2

公开(公告)日：2014-12-30

申请号：US13280759

申请日：2011-10-25

申请人： Jae-Joo Shim ,  Kyoung-Hoon Kim ,  Woonkyung Lee ,  Wonseok Cho ,  Hoosung Cho ,  Jintaek Park ,  Jong-Yeon Kim ,  Sung-Min Hwang

发明人： Jae-Joo Shim ,  Kyoung-Hoon Kim ,  Woonkyung Lee ,  Wonseok Cho ,  Hoosung Cho ,  Jintaek Park ,  Jong-Yeon Kim ,  Sung-Min Hwang

IPC分类号： H01L29/792 ,  H01L27/115

CPC分类号： H01L27/11578 ,  H01L27/11582 ,  H01L29/7926

摘要： Three-dimensional semiconductor devices may be provided. The devices may include a stack-structure including gate patterns and an insulation pattern. The stack-structure may further include a first portion and a second portion, and the second portion of the stack-structure may have a narrower width than the first portion. The devices may also include an active pattern that penetrates the stack-structure. The devices may further include a common source region adjacent the stack-structure. The devices may additionally include a strapping contact plug on the common source region.

摘要翻译： 可以提供三维半导体器件。 这些装置可以包括包括栅极图案和绝缘图案的堆叠结构。 堆叠结构还可以包括第一部分和第二部分，并且堆叠结构的第二部分可以具有比第一部分更窄的宽度。 装置还可以包括穿透堆叠结构的活动图案。 所述装置还可以包括与堆栈结构相邻的公共源区。 所述装置还可以包括在公共源区上的捆扎接触塞。

公开(公告)号：US08643179B2

公开(公告)日：2014-02-04

申请号：US13240302

申请日：2011-09-22

申请人： Yun-Hyeok Im ,  Jong-Yeon Kim ,  Tae-Je Cho ,  Un-Byoung Kang

发明人： Yun-Hyeok Im ,  Jong-Yeon Kim ,  Tae-Je Cho ,  Un-Byoung Kang

IPC分类号： H01L23/485

CPC分类号： H01L24/81 ,  H01L23/3128 ,  H01L23/49811 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/06181 ,  H01L2224/11001 ,  H01L2224/13025 ,  H01L2224/13075 ,  H01L2224/13099 ,  H01L2224/16145 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2225/06568 ,  H01L2924/0001 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2224/05552 ,  H01L2924/00

摘要： Provided are a bump structure includes a first bump and a second bump, a semiconductor package including the same, and a method of manufacturing the same. The bump structure includes: first bump provided on a connection pad of a substrate, the first bump including a plurality of nano-wires extending from the connection pad and a body connecting end portions of the plurality of nano-wires; and a second bump provided on the body of the first bump.

摘要翻译： 提供一种凸块结构，包括第一凸块和第二凸块，包括该凸块的半导体封装及其制造方法。 凸块结构包括：设置在基板的连接焊盘上的第一凸块，所述第一凸块包括从所述连接焊盘延伸的多个纳米线和连接所述多个纳米线的端部的主体; 以及设置在第一凸块的主体上的第二凸块。

公开(公告)号：US08522115B2

公开(公告)日：2013-08-27

申请号：US12898843

申请日：2010-10-06

申请人： Ju hyung Kim ,  Chang Seok Kang ,  Young Woo Park ,  Jung Dal Choi ,  Jong-Yeon Kim

发明人： Ju hyung Kim ,  Chang Seok Kang ,  Young Woo Park ,  Jung Dal Choi ,  Jong-Yeon Kim

IPC分类号： G11C29/00

CPC分类号： G06F11/1068 ,  G11C2029/0411

摘要： A flash memory device provided here comprises a user data area storing user data; and a security data area storing security data. The security data area stores a security data pattern in which first groups of memory cells storing security data are arranged respectively between second groups of memory cells storing dummy data.

摘要翻译： 这里提供的闪存装置包括存储用户数据的用户数据区域; 以及存储安全数据的安全数据区。 安全数据区域存储其中存储有安全数据的第一组存储单元分别布置在存储虚拟数据的第二组存储单元之间的安全数据模式。