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    T-gate forming method and metamorphic high electron mobility transistor fabricating method using the same
    1.
    发明申请
    T-gate forming method and metamorphic high electron mobility transistor fabricating method using the same 审中-公开
    T型栅极形成方法和使用其的变质高电子迁移率晶体管制造方法

    公开(公告)号：US20080182369A1

    公开(公告)日：2008-07-31

    申请号：US11896660

    申请日：2007-09-05

    申请人： Yoon-Ha Jeong ,  Kang-Sung Lee ,  Young-Su Kim ,  Yun-Ki Hong

    发明人： Yoon-Ha Jeong ,  Kang-Sung Lee ,  Young-Su Kim ,  Yun-Ki Hong

    IPC分类号： H01L21/338

    CPC分类号： H01L29/7783 ,  H01L21/28587 ,  H01L29/42316 ,  H01L29/66462

    摘要： A method for forming a T-gate of a metamorphic high electron mobility transistor is provided. The method includes sequentially laminating a plurality of resist films on a substrate; forming a T-shaped pattern in the laminated resist films using electron beam lithography; forming a gate metal layer on the substrate where the T-shaped pattern has been formed; attaching an adhesion member to the gate metal layer formed on a top surface of the laminated resist films and detaching the adhesion member to thereby remove the gate metal layer; and removing the laminated resist films.

    摘要翻译： 提供了一种用于形成变质高电子迁移率晶体管的T栅极的方法。 该方法包括在基板上依次层叠多个抗蚀剂膜; 使用电子束光刻在层压的抗蚀剂膜中形成T形图案; 在已经形成T形图案的基板上形成栅极金属层; 将附着构件附接到形成在层压抗蚀剂膜的顶表面上的栅极金属层，并分离粘合构件，从而去除栅极金属层; 并除去层叠的抗蚀膜。

    T-gate forming method for high electron mobility transistor and gate structure thereof
    2.
    发明授权
    T-gate forming method for high electron mobility transistor and gate structure thereof 有权
    用于高电子迁移率晶体管的T型栅极形成方法及其栅极结构

    公开(公告)号：US07932540B2

    公开(公告)日：2011-04-26

    申请号：US11700946

    申请日：2007-02-01

    申请人： Yoon-Ha Jeong ,  Kang-Sung Lee ,  Young-Su Kim ,  Yun-Ki Hong ,  Sung-Woo Jung

    发明人： Yoon-Ha Jeong ,  Kang-Sung Lee ,  Young-Su Kim ,  Yun-Ki Hong ,  Sung-Woo Jung

    IPC分类号： H01L29/66

    CPC分类号： H01L29/7787 ,  H01L29/42316 ,  H01L29/66462

    摘要： A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

    摘要翻译： 一种用于高电子迁移率晶体管的T形栅形成方法包括以下步骤：在半导体衬底上涂覆各自具有彼此不同的电子束灵敏度的第一，第二和第三抗蚀剂; 通过在半导体衬底上使用电子束然后选择性地显影第三抗蚀剂来执行第一曝光处理; 通过选择性地显影所述第二抗蚀剂来限定栅极头区域，以具有比所述第三抗蚀剂宽的显影宽度; 通过在半导体衬底上使用电子束进行第二曝光处理，然后在低于第二和第三步骤的显影的温度下，以弯曲形状选择性地显影第一抗蚀剂; 并将金属材料沉积在抗蚀剂上，然后去除它们以形成T形栅极。

    T-gate forming method for high electron mobility transistor and gate structure thereof
    3.
    发明申请
    T-gate forming method for high electron mobility transistor and gate structure thereof 有权
    用于高电子迁移率晶体管的T型栅极形成方法及其栅极结构

    公开(公告)号：US20080108188A1

    公开(公告)日：2008-05-08

    申请号：US11700946

    申请日：2007-02-01

    申请人： Yoon-Ha Jeong ,  Kang-Sung Lee ,  Young-Su Kim ,  Yun-Ki Hong ,  Sung-Woo Jung

    发明人： Yoon-Ha Jeong ,  Kang-Sung Lee ,  Young-Su Kim ,  Yun-Ki Hong ,  Sung-Woo Jung

    IPC分类号： H01L21/338

    CPC分类号： H01L29/7787 ,  H01L29/42316 ,  H01L29/66462

    摘要： A T-gate forming method for a high electron mobility transistor includes the steps of: coating a first, a second and a third resist, each having an electron beam sensitivity different from each other, on a semiconductor substrate; performing a first exposure process by using an electron beam on the semiconductor substrate and then selectively developing the third resist; defining a gate head area by selectively developing the second resist to have a developed width wider than that of the third resist; performing a second exposure process by using an electron beam on the semiconductor substrate and then selectively developing the first resist in a bent shape at a temperature lower than in the development of the second and the third steps; and depositing metallic materials on the resists and then removing them to form a T-gate.

    摘要翻译： 一种用于高电子迁移率晶体管的T形栅形成方法包括以下步骤：在半导体衬底上涂覆各自具有彼此不同的电子束灵敏度的第一，第二和第三抗蚀剂; 通过在半导体衬底上使用电子束然后选择性地显影第三抗蚀剂来执行第一曝光处理; 通过选择性地显影所述第二抗蚀剂来限定栅极头区域，以具有比所述第三抗蚀剂宽的显影宽度; 通过在半导体衬底上使用电子束进行第二曝光处理，然后在低于第二和第三步骤的显影的温度下，以弯曲形状选择性地显影第一抗蚀剂; 并将金属材料沉积在抗蚀剂上，然后去除它们以形成T形栅极。

    THIN FILM TYPE SOLAR CELL AND FABRICATION METHOD THEREOF
    7.
    发明申请
    THIN FILM TYPE SOLAR CELL AND FABRICATION METHOD THEREOF 有权
    薄膜型太阳能电池及其制造方法

    公开(公告)号：US20130228218A1

    公开(公告)日：2013-09-05

    申请号：US13560951

    申请日：2012-07-27

    申请人： Sung-Chul Lee ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Su Kim ,  Young-Soo Kim ,  Dong-Hun Lee

    发明人： Sung-Chul Lee ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Su Kim ,  Young-Soo Kim ,  Dong-Hun Lee

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/065 ,  H01L31/02168 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer.

    摘要翻译： 一种制造太阳能电池的方法包括在半导体衬底上形成具有第一导电类型的掺杂部分，在半导体衬底上生长氧化物层，在氧化物层中形成多个凹陷部分，在半导体上进一步生长氧化物层 在所述半导体衬底的与所述凹部对应的区域上形成具有第二导电类型的掺杂部分，形成与所述第一导电类型的所述掺杂部分电耦合的第一导电电极，以及在所述半导体衬底上形成第二导电电极 并且电耦合到具有第二导电类型的掺杂部分，其中具有第一和第二导电类型的掺杂部分之间的间隙对应于通过进一步生长氧化物层形成的氧化物层的宽度。

    Mooring system for a vessel
    8.
    发明授权
    Mooring system for a vessel 有权
    船舶系泊系统

    公开(公告)号：US08499709B2

    公开(公告)日：2013-08-06

    申请号：US12969994

    申请日：2010-12-16

    申请人： Phill-Seung Lee ,  SoonHung Han ,  Hyun Chung ,  Yong-Yook Kim ,  Kook-Jin Choi ,  Sang-Il Kim ,  Young-Hee Cho ,  Young-Su Kim

    发明人： Phill-Seung Lee ,  SoonHung Han ,  Hyun Chung ,  Yong-Yook Kim ,  Kook-Jin Choi ,  Sang-Il Kim ,  Young-Hee Cho ,  Young-Su Kim

    IPC分类号： E02B3/24

    CPC分类号： B63B21/00 ,  B63B2021/001

    摘要： A mooring system for a vessel includes an attachment unit configured to be detachably attached to a hull of the vessel; a robot arm including a plurality of arms, the arms being coupled to each other to turn in a vertical direction, the robot, arm extending by an arm actuator provided thereto to transfer the attachment unit to an attachment position of the hull; a rotation unit connected to the robot arm and allowing the robot arm to turn in a horizontal direction; and a mooring winch for winding a mooring cable to draw the attachment unit. A floating body or a quay wall may include the mooring system.

    摘要翻译： 用于船舶的系泊系统包括被配置为可拆卸地附接到船体的附接单元; 机器人手臂，其包括多个臂，所述臂彼此联接以在垂直方向上转动，所述机器人臂由设置在其上的臂致动器延伸以将所述附接单元转移到所述船体的附接位置; 旋转单元，连接到所述机器人手臂并允许所述机器人手臂沿水平方向转动; 以及用于缠绕系泊缆索以绘制附接单元的系泊绞车。 浮体或码头墙可包括系泊系统。

    SOLAR CELL AND MANUFACTURING METHOD THEREOF
    9.
    发明申请
    SOLAR CELL AND MANUFACTURING METHOD THEREOF 审中-公开
    太阳能电池及其制造方法

    公开(公告)号：US20130104974A1

    公开(公告)日：2013-05-02

    申请号：US13620475

    申请日：2012-09-14

    申请人： Young-Su Kim ,  Dong-Seop Kim ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Sang Park ,  Chan-Bin Mo ,  Sung-Chul Lee

    发明人： Young-Su Kim ,  Dong-Seop Kim ,  Doo-Youl Lee ,  Young-Jin Kim ,  Young-Sang Park ,  Chan-Bin Mo ,  Sung-Chul Lee

    IPC分类号： H01L31/0216

    CPC分类号： H01L31/0682 ,  H01L31/022441 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A solar cell includes a silicon substrate including a front surface for receiving light, and a rear surface opposite the front surface, an emitter diffusion region on the rear surface and doped with a first polarity that is opposite to a polarity of the silicon substrate, a base diffusion region on the rear surface of the substrate and doped with a second polarity that is the same as the polarity of the silicon substrate, and an insulation gap between the emitter diffusion region and the base diffusion region, wherein the base diffusion region has a closed polygonal shape, and wherein the insulation gap is adjacent the base diffusion region.

    摘要翻译： 太阳能电池包括：硅基板，包括用于接收光的前表面和与前表面相对的后表面，在后表面上的发射极扩散区域，并掺杂有与硅基板的极性相反的第一极性; 基底扩散区域，并且掺杂有与硅衬底的极性相同的第二极性，以及发射极扩散区域和基极扩散区域之间的绝缘间隙，其中，基极扩散区域具有 闭合的多边形形状，并且其中绝缘间隙与基底扩散区相邻。