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    Method of manufacturing thin film transistor array panel
    3.
    发明授权
    Method of manufacturing thin film transistor array panel 有权
    制造薄膜晶体管阵列面板的方法

    公开(公告)号：US07754549B2

    公开(公告)日：2010-07-13

    申请号：US11839683

    申请日：2007-08-16

    申请人： Jae-Beom Choi ,  Young-jin Chang ,  Yoon-Seok Choi ,  Seung-Hwan Shim ,  Han-Na Jo ,  Jung-Hoon Shin ,  Joon-Young Koh

    发明人： Jae-Beom Choi ,  Young-jin Chang ,  Yoon-Seok Choi ,  Seung-Hwan Shim ,  Han-Na Jo ,  Jung-Hoon Shin ,  Joon-Young Koh

    IPC分类号： H01L29/786

    CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/1281

    摘要： A method of manufacturing a thin film transistor array panel includes forming an amorphous silicon film on an insulating substrate; forming a sacrificial film having an embossed surface on the amorphous silicon film; contacting a metal plate with the sacrificial film and performing heat-treatment for crystallizing the amorphous silicon film to change the amorphous silicon film to a polycrystalline silicon film; removing the metal plate and the sacrificial film; patterning the polycrystalline silicon film to form a semiconductor; forming a gate insulating layer which covers the semiconductor; forming a gate line on the gate insulating layer, a portion of the gate line overlapping the semiconductor; heavily doping a conductive impurity into portions of the semiconductor to form a source region and a drain region; forming an interlayer insulating layer which covers the gate line and the semiconductor; and forming a data line and an output electrode connected to the source and drain regions, respectively, on the interlayer insulating layer.

    摘要翻译： 制造薄膜晶体管阵列面板的方法包括在绝缘基板上形成非晶硅膜; 在所述非晶硅膜上形成具有压花表面的牺牲膜; 使金属板与牺牲膜接触，并进行热处理以使非晶硅膜结晶，将非晶硅膜改变为多晶硅膜; 去除金属板和牺牲膜; 图案化多晶硅膜以形成半导体; 形成覆盖半导体的栅极绝缘层; 在所述栅极绝缘层上形成栅极线，所述栅极线的一部分与所述半导体重叠; 将导电杂质重掺杂到半导体的部分中以形成源极区和漏极区; 形成覆盖所述栅极线和所述半导体的层间绝缘层; 以及分别在层间绝缘层上形成连接到源区和漏区的数据线和输出电极。

    Making thin film transistors on display panels
    4.
    发明申请
    Making thin film transistors on display panels 审中-公开
    在显示面板上制作薄膜晶体管

    公开(公告)号：US20080006827A1

    公开(公告)日：2008-01-10

    申请号：US11788501

    申请日：2007-04-20

    申请人： Seung-Hwan Shim ,  Kwan-Wook Jung ,  Young-Jin Chang ,  Jae-Beom Choi ,  Yoon-Seok Choi

    发明人： Seung-Hwan Shim ,  Kwan-Wook Jung ,  Young-Jin Chang ,  Jae-Beom Choi ,  Yoon-Seok Choi

    IPC分类号： H01L31/036 ,  H01L21/84

    CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/3262 ,  H01L29/66765 ,  H01L29/78612 ,  H01L29/78678 ,  H01L29/78696 ,  H01L51/56

    摘要： A thin film transistor for a display device includes a substrate, a gate electrode formed on the substrate, a gate insulating layer formed on the gate electrode, a polycrystalline semiconductor formed on the gate insulating layer and overlapping the gate electrode, a source electrode partially overlapping the polycrystalline semiconductor, and a drain electrode partially overlapping the polycrystalline semiconductor. The polycrystalline semiconductor includes a plurality of first polycrystalline semiconductors that are doped with conductive impurities and a plurality of second polycrystalline semiconductors that are not doped with conductive impurities, and the first polycrystalline semiconductors are disposed between and connected in series with adjacent ones of the second polycrystalline semiconductors.

    摘要翻译： 一种用于显示装置的薄膜晶体管，包括基板，形成在基板上的栅电极，形成在栅电极上的栅极绝缘层，形成在栅极绝缘层上并与栅电极重叠的多晶半导体，源电极部分重叠 多晶半导体和与多晶半导体部分重叠的漏电极。 多晶半导体包括掺杂有导电杂质的多个第一多晶半导体和不掺杂有导电杂质的多个第二多晶半导体，并且第一多晶半导体布置在相邻的第二多晶半导体之间并与其连接 半导体。

    FLAT PANEL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME
    5.
    发明申请
    FLAT PANEL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    平板显示装置及其制造方法

    公开(公告)号：US20080026500A1

    公开(公告)日：2008-01-31

    申请号：US11781518

    申请日：2007-07-23

    申请人： Han-Na Jo ,  Chi-Woo Kim ,  Young-Jin Chang ,  Jae-Beom Choi

    发明人： Han-Na Jo ,  Chi-Woo Kim ,  Young-Jin Chang ,  Jae-Beom Choi

    IPC分类号： H01L33/00 ,  H01L21/335

    CPC分类号： H01L27/1285

    摘要： A flat panel display device includes a substrate including a pixel area having a plurality of pixel parts and a peripheral circuit area disposed adjacent to the pixel area to drive the pixel parts, a circuit TFT disposed in the peripheral circuit area, the circuit TFT including a first semiconductor layer having a first crystal growth in a lateral direction, and a pixel TFT disposed in the pixel area, the pixel TFT including a second semiconductor layer having a second crystal isotropic growth.

    摘要翻译： 平板显示装置包括：基板，包括具有多个像素部分的像素区域和与像素区域相邻设置的外围电路区域以驱动像素部分;电路TFT，设置在外围电路区域中;电路TFT包括： 在横向方向上具有第一晶体生长的第一半导体层和设置在像素区域中的像素TFT，所述像素TFT包括具有第二晶体各向同性生长的第二半导体层。

    Flat panel display device and method for manufacturing the same using sequental lateral solidifcation and solid phase crystallization
    6.
    发明授权
    Flat panel display device and method for manufacturing the same using sequental lateral solidifcation and solid phase crystallization 有权
    平板显示装置及其制造方法使用顺序侧向固化和固相结晶

    公开(公告)号：US07820466B2

    公开(公告)日：2010-10-26

    申请号：US11781518

    申请日：2007-07-23

    申请人： Han-Na Jo ,  Chi-Woo Kim ,  Young-Jin Chang ,  Jae-Beom Choi

    发明人： Han-Na Jo ,  Chi-Woo Kim ,  Young-Jin Chang ,  Jae-Beom Choi

    IPC分类号： H01L21/00

    CPC分类号： H01L27/1285

    摘要： A flat panel display device includes a substrate including a pixel area having a plurality of pixel parts and a peripheral circuit area disposed adjacent to the pixel area to drive the pixel parts, a circuit TFT disposed in the peripheral circuit area, the circuit TFT including a first semiconductor layer having a first crystal growth in a lateral direction, and a pixel TFT disposed in the pixel area, the pixel TFT including a second semiconductor layer having a second crystal isotropic growth.

    摘要翻译： 平板显示装置包括：基板，包括具有多个像素部分的像素区域和与像素区域相邻设置的外围电路区域以驱动像素部分;电路TFT，设置在外围电路区域中;电路TFT包括： 在横向方向上具有第一晶体生长的第一半导体层和设置在像素区域中的像素TFT，所述像素TFT包括具有第二晶体各向同性生长的第二半导体层。

    Display apparatus and method of manufacturing thereof
    7.
    发明授权
    Display apparatus and method of manufacturing thereof 有权
    显示装置及其制造方法

    公开(公告)号：US07824952B2

    公开(公告)日：2010-11-02

    申请号：US11689619

    申请日：2007-03-22

    申请人： Jae-Beom Choi ,  Young-Jin Chang ,  Kwan-Wook Jung ,  Seung-Hwan Shim

    发明人： Jae-Beom Choi ,  Young-Jin Chang ,  Kwan-Wook Jung ,  Seung-Hwan Shim

    IPC分类号： H01L51/40

    CPC分类号： H01L29/04 ,  H01L27/1229 ,  H01L27/1288 ,  H01L27/3262

    摘要： A display apparatus, such as an organic light emitting diode (“OLED”) display, is driven by thin film transistors (“TFTs”), including a driving TFT and a switching TFT, and a pixel electrode. The display apparatus includes an amorphous silicon layer for the switching TFT and a microcrystalline silicon or polycrystalline silicon layer for the driving TFT. The amorphous silicon layer and the microcrystalline silicon layer are separated by an insulating layer. The apparatus provides product reliability and high image quality. A method of manufacturing the apparatus is characterized by reducing processing steps, and using a special mask which is a half tone mask or a slit mask adapted to forming a source electrode and a drain electrode of the switching TFT or the driving TFT and a semiconductor layer during a photolithographic process.

    摘要翻译： 诸如有机发光二极管（“OLED”）显示器的显示装置由包括驱动TFT和开关TFT的薄膜晶体管（“TFT”）以及像素电极驱动。 显示装置包括用于开关TFT的非晶硅层和用于驱动TFT的微晶硅或多晶硅层。 非晶硅层和微晶硅层被绝缘层分开。 该设备提供产品可靠性和高图像质量。 制造该装置的方法的特征在于减少处理步骤，并且使用作为适于形成开关TFT或驱动TFT的源电极和漏电极的半色调掩模或狭缝掩模的特殊掩模和半导体层 在光刻过程中。

    ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME
    9.
    发明申请
    ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME 有权
    有机发光显示装置及其制造方法

    公开(公告)号：US20130056710A1

    公开(公告)日：2013-03-07

    申请号：US13426733

    申请日：2012-03-22

    申请人： Jae-Hwan Oh ,  Young-Jin Chang ,  Seong-Hyun Jin ,  Se-Hun Park ,  June-Woo Lee ,  Kwang-Hae Kim ,  Jong-Hyun Choi ,  Kwan-Kyu Lee ,  Won-Kyu Lee ,  Jae-Beom Choi

    发明人： Jae-Hwan Oh ,  Young-Jin Chang ,  Seong-Hyun Jin ,  Se-Hun Park ,  June-Woo Lee ,  Kwang-Hae Kim ,  Jong-Hyun Choi ,  Kwan-Kyu Lee ,  Won-Kyu Lee ,  Jae-Beom Choi

    IPC分类号： H01L27/32 ,  H01L51/56

    CPC分类号： H01L27/1255 ,  H01L27/3258 ,  H01L27/3265 ,  H01L51/5265 ,  H01L51/5268 ,  H01L2227/323

    摘要： An organic light-emitting display apparatus includes a first insulating layer, a second insulating layer on the first insulating layer and including an unevenness portion, a third insulating layer on the second insulating layer, a pixel electrode on the third insulating layer, an opposite electrode facing the pixel electrode, and an organic emission layer between the pixel electrode and the opposite electrode; a thin film transistor including an active layer, a gate electrode, and source/drain electrodes connected to the active layer, the first insulating layer being between the active layer and the gate electrode and the second insulating layer being between the gate electrode, and the source/drain electrodes; and a capacitor including a lower electrode on a same layer as the gate electrode, a dielectric layer of a same material as the third insulating layer, and an upper electrode on a same layer as the pixel electrode.

    摘要翻译： 一种有机发光显示装置，包括第一绝缘层，第一绝缘层上的第二绝缘层，包括凹凸部，第二绝缘层上的第三绝缘层，第三绝缘层上的像素电极，对置电极 面对像素电极，以及像素电极和对置电极之间的有机发光层; 薄膜晶体管，包括有源层，栅电极和连接到有源层的源极/漏极，所述第一绝缘层位于所述有源层和所述栅电极之间，所述第二绝缘层位于所述栅电极与所述栅电极之间， 源极/漏极; 以及电容器，其包括与栅电极相同的层上的下电极，与第三绝缘层相同的材料的电介质层，以及与像素电极同层的上电极。