公开(公告)号：US20120042926A1

公开(公告)日：2012-02-23

申请号：US13212395

申请日：2011-08-18

申请人： Kazuo Nishi ,  Yasushi Maeda ,  Ryosuke Motoyoshi ,  Yuji Oda ,  Kei Takahashi ,  Yoshiaki Ito ,  Tatsuji Nishijima

发明人： Kazuo Nishi ,  Yasushi Maeda ,  Ryosuke Motoyoshi ,  Yuji Oda ,  Kei Takahashi ,  Yoshiaki Ito ,  Tatsuji Nishijima

IPC分类号： H01L31/05 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/02008 ,  H01L31/046 ,  H01L31/0504 ,  Y02E10/548

摘要： A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n−1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.

摘要翻译： 通过在基板上平行地形成n个（n为自然数）的集成光电转换装置，其中包含多个串联连接的单元，并且电连接，得到抑制输出电压缺陷的光电转换模块 并联n-1个或更少的具有正常电特性的集成光电转换装置，并且不包括具有诸如顶部和底部电极之间的短路的特性缺陷或由于结构缺陷引起的漏电流的集成光电转换装置 如在半导体层等中形成的。

公开(公告)号：US09413289B2

公开(公告)日：2016-08-09

申请号：US13281479

申请日：2011-10-26

申请人： Yoshiaki Ito ,  Kazuo Nishi ,  Kei Takahashi

发明人： Yoshiaki Ito ,  Kazuo Nishi ,  Kei Takahashi

IPC分类号： H02J1/00 ,  H02J3/00 ,  H02S40/32 ,  H02J1/10 ,  H02J3/38

CPC分类号： H02S40/32 ,  H02J1/10 ,  H02J3/383 ,  Y02E10/563 ,  Y10T307/707

摘要： A photoelectric conversion device includes at least two photoelectric conversion elements which have voltage-current characteristics different from each other. Further, one of the photoelectric conversion elements has photoelectric conversion efficiency higher than that of the other photoelectric conversion element under the environment in which room light can be obtained. Furthermore, the other photoelectric conversion element has photoelectric conversion efficiency higher than the one of the photoelectric conversion elements under the environment in which sunlight can be obtained. Moreover, each of the voltage of electric power generated in the at least two photoelectric conversion elements is adjusted by one of at least two DC-DC converters corresponding the photoelectric conversion element. In addition, part of the electric power generated in the one of the photoelectric conversion elements is used as drive electric power of the at least two DC-DC converter.

摘要翻译： 光电转换装置包括具有彼此不同的电压 - 电流特性的至少两个光电转换元件。 此外，在可以获得室内光的环境下，其中一个光电转换元件的光电转换效率高于另一光电转换元件的光电转换效率。 此外，另一光电转换元件在可以获得太阳光的环境下具有比一个光电转换元件高的光电转换效率。 此外，通过对应于光电转换元件的至少两个DC-DC转换器之一来调节在至少两个光电转换元件中产生的电力的每个电压。 另外，将一个光电转换元件中产生的部分电力用作至少两个DC-DC转换器的驱动电力。

公开(公告)号：US09214587B2

公开(公告)日：2015-12-15

申请号：US13212395

申请日：2011-08-18

申请人： Kazuo Nishi ,  Yasushi Maeda ,  Ryosuke Motoyoshi ,  Yuji Oda ,  Kei Takahashi ,  Yoshiaki Ito ,  Tatsuji Nishijima

发明人： Kazuo Nishi ,  Yasushi Maeda ,  Ryosuke Motoyoshi ,  Yuji Oda ,  Kei Takahashi ,  Yoshiaki Ito ,  Tatsuji Nishijima

IPC分类号： H01L31/0224 ,  H01L31/075 ,  H01L31/02 ,  H01L31/05 ,  H01L31/046

CPC分类号： H01L31/075 ,  H01L31/02008 ,  H01L31/046 ,  H01L31/0504 ,  Y02E10/548

摘要： A photoelectric conversion module in which an output voltage defect is suppressed is obtained by forming in parallel over a substrate n number (n is a natural number) of integrated photoelectric conversion devices each including a plurality of cells that are connected in series, and electrically connecting in parallel n−1 number or less of integrated photoelectric conversion devices with normal electrical characteristics and excluding an integrated photoelectric conversion device with a characteristic defect such as a short-circuit between top and bottom electrodes or a leak current due to a structural defect or the like formed in a semiconductor layer or the like.

摘要翻译： 通过在基板上平行地形成n个（n为自然数）的集成光电转换装置，其中包含多个串联连接的单元，并且电连接，得到抑制输出电压缺陷的光电转换模块 并联n-1个或更少的具有正常电特性的集成光电转换装置，并且不包括具有诸如顶部和底部电极之间的短路的特性缺陷或由于结构缺陷引起的漏电流的集成光电转换装置 如在半导体层等中形成的。

公开(公告)号：US20120104862A1

公开(公告)日：2012-05-03

申请号：US13281479

申请日：2011-10-26

申请人： Yoshiaki Ito ,  Kazuo Nishi ,  Kei Takahashi

发明人： Yoshiaki Ito ,  Kazuo Nishi ,  Kei Takahashi

IPC分类号： H02J1/00

CPC分类号： H02S40/32 ,  H02J1/10 ,  H02J3/383 ,  Y02E10/563 ,  Y10T307/707

摘要： A photoelectric conversion device includes at least two photoelectric conversion elements which have voltage-current characteristics different from each other. Further, one of the photoelectric conversion elements has photoelectric conversion efficiency higher than that of the other photoelectric conversion element under the environment in which room light can be obtained. Furthermore, the other photoelectric conversion element has photoelectric conversion efficiency higher than the one of the photoelectric conversion elements under the environment in which sunlight can be obtained. Moreover, each of the voltage of electric power generated in the at least two photoelectric conversion elements is adjusted by one of at least two DC-DC converters corresponding the photoelectric conversion element. In addition, part of the electric power generated in the one of the photoelectric conversion elements is used as drive electric power of the at least two DC-DC converter.

摘要翻译： 光电转换装置包括具有彼此不同的电压 - 电流特性的至少两个光电转换元件。 此外，在可以获得室内光的环境下，其中一个光电转换元件的光电转换效率高于另一光电转换元件的光电转换效率。 此外，另一光电转换元件在可以获得太阳光的环境下具有比一个光电转换元件高的光电转换效率。 此外，通过对应于光电转换元件的至少两个DC-DC转换器之一来调节在至少两个光电转换元件中产生的电力的每个电压。 另外，将一个光电转换元件中产生的部分电力用作至少两个DC-DC转换器的驱动电力。

公开(公告)号：US09793801B2

公开(公告)日：2017-10-17

申请号：US13110303

申请日：2011-05-18

申请人： Kei Takahashi ,  Yoshiaki Ito

发明人： Kei Takahashi ,  Yoshiaki Ito

IPC分类号： H02M3/158 ,  H02M3/157 ,  H02M1/00

CPC分类号： H02M3/158 ,  H02M3/157 ,  H02M2001/0048 ,  Y02B70/1491

摘要： An object is to reduce power consumption of a semiconductor device including a DC-DC converter circuit. The semiconductor device includes a DC-DC converter circuit and a microprocessor. The DC-DC converter circuit includes a conversion circuit including an inductor and a transistor, and a control circuit including a comparison circuit and a logic circuit. In the control circuit, the comparison circuit compares an output of the conversion circuit and a reference value, and the logic circuit performs an arithmetic operation between an output of the comparison circuit and a clock signal of the microprocessor. In the conversion circuit, the transistor controls a current flowing through the inductor in accordance with an output of the logic circuit, and the output of the conversion circuit is generated in accordance with the current flowing through the inductor.

公开(公告)号：US08278974B2

公开(公告)日：2012-10-02

申请号：US13078219

申请日：2011-04-01

申请人： Kei Takahashi ,  Yoshiaki Ito

发明人： Kei Takahashi ,  Yoshiaki Ito

IPC分类号： H03K21/00

CPC分类号： H03K23/54 ,  G06F1/06 ,  H03K21/12 ,  H03K21/406

摘要： A divider circuit includes a shift register which generates 2X (X is a natural number greater than or equal to 2) pulse signals in accordance with a first clock signal or a second clock signal and outputs them, and a divided signal output circuit which generates a signal to be a third clock signal with a cycle X times longer than a cycle of the first clock signal in accordance with the 2X pulse signals and outputs it. The divided signal output circuit includes X first transistors which control whether voltage of the signal to be the third clock signal is set to first voltage; and X second transistors which control whether voltage of the signal to be the third clock signal is set to second voltage.

摘要翻译： 分频电路包括根据第一时钟信号或第二时钟信号产生2X（X为大于或等于2的自然数）脉冲信号的移位寄存器，并输出它们;以及分频信号输出电路， 根据2X脉冲信号，信号成为第三时钟信号，其周期比第一时钟信号的周期长十倍，并将其输出。 分频信号输出电路包括：X个第一晶体管，其控制作为第三时钟信号的信号的电压是否被设置为第一电压; 以及X第二晶体管，其控制作为第三时钟信号的信号的电压是否被设定为第二电压。

公开(公告)号：US09006728B2

公开(公告)日：2015-04-14

申请号：US12894911

申请日：2010-09-30

申请人： Shunpei Yamazaki ,  Kei Takahashi ,  Yoshiaki Ito

发明人： Shunpei Yamazaki ,  Kei Takahashi ,  Yoshiaki Ito

IPC分类号： H01L29/12 ,  H01L29/04 ,  H01L31/036 ,  H01L29/66 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L27/1251 ,  H01L29/045 ,  H01L29/0611 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66477 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78642 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

摘要： It is an object to provide a semiconductor device having a new productive semiconductor material and a new structure. The semiconductor device includes a first conductive layer over a substrate, a first insulating layer which covers the first conductive layer, an oxide semiconductor layer over the first insulating layer that overlaps with part of the first conductive layer and has a crystal region in a surface part, second and third conductive layers formed in contact with the oxide semiconductor layer, an insulating layer which covers the oxide semiconductor layer and the second and third conductive layers, and a fourth conductive layer over the insulating layer that overlaps with part of the oxide semiconductor layer.

摘要翻译： 本发明的目的是提供一种具有新的生产半导体材料和新结构的半导体器件。 半导体器件包括：衬底上的第一导电层，覆盖第一导电层的第一绝缘层，与第一导电层的一部分重叠的第一绝缘层上的氧化物半导体层，并且在表面部分中具有晶体区域 形成为与氧化物半导体层接触的第二和第三导电层，覆盖氧化物半导体层和第二和第三导电层的绝缘层，以及绝缘层上的与氧化物半导体层的一部分重叠的第四导电层 。

公开(公告)号：US20110068852A1

公开(公告)日：2011-03-24

申请号：US12888064

申请日：2010-09-22

申请人： Shunpei Yamazaki ,  Kei Takahashi ,  Yoshiaki Ito

发明人： Shunpei Yamazaki ,  Kei Takahashi ,  Yoshiaki Ito

IPC分类号： G05F1/10 ,  H01L29/26 ,  H01L21/20

CPC分类号： H01L29/7869 ,  H01L21/0237 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42384 ,  H01L29/66969

摘要： The semiconductor device includes a first conductive layer over a substrate; an oxide semiconductor layer which covers the first conductive layer; a second conductive layer in a region which is not overlapped with the first conductive layer over the oxide semiconductor layer; an insulating layer which covers the oxide semiconductor layer and the second conductive layer; and a third conductive layer in a region including at least a region which is not overlapped with the first conductive layer or the second conductive layer over the insulating layer.

摘要翻译： 半导体器件包括在衬底上的第一导电层; 覆盖所述第一导电层的氧化物半导体层; 在与所述氧化物半导体层上的所述第一导电层不重叠的区域中的第二导电层; 覆盖氧化物半导体层和第二导电层的绝缘层; 以及在绝缘层上至少包括不与第一导电层或第二导电层重叠的区域的区域中的第三导电层。

公开(公告)号：US09362820B2

公开(公告)日：2016-06-07

申请号：US13239515

申请日：2011-09-22

申请人： Yoshiaki Ito ,  Kei Takahashi

发明人： Yoshiaki Ito ,  Kei Takahashi

IPC分类号： G05F1/00 ,  H02M3/156

CPC分类号： H02M3/156

摘要： A DCDC converter includes a control circuit, a transistor in which switching is controlled by being supplied voltage output from the control circuit to a gate electrode of the transistor, a voltage conversion portion in which supply of input voltage is controlled by the switching of the transistor and output power commensurate with duty ratio of the switching of the transistor, and a detection circuit detecting the output power. Further, the control circuit includes a control signal generation circuit generating a control signal with a pulse voltage waveform and a selection circuit applying voltage of the control signal to the gate electrode in the case where current detected by the detection circuit is the same as or exceeds the threshold value and applying voltage for turning on the transistor to the gate electrode in the case where the current detected by the detection circuit falls below the threshold value.

摘要翻译： DCDC转换器包括控制电路，通过从控制电路向晶体管的栅电极输出的电压来控制开关的晶体管，通过晶体管的开关来控制输入电压的供给的电压转换部分 以及与晶体管的开关的占空比相当的输出功率，以及检测输出功率的检测电路。 此外，控制电路包括控制信号产生电路，在由检测电路检测到的电流相同或超过的情况下，产生具有脉冲电压波形的控制信号和选择电路将施加控制信号的电压施加到栅电极 在由检测电路检测到的电流低于阈值的情况下，将阈值和用于将晶体管接通至栅电极的施加电压。

公开(公告)号：US09224757B2

公开(公告)日：2015-12-29

申请号：US13307084

申请日：2011-11-30

申请人： Kei Takahashi ,  Yoshiaki Ito

发明人： Kei Takahashi ,  Yoshiaki Ito

IPC分类号： G05F1/569 ,  H01L27/12 ,  H02M3/158 ,  H02M3/335 ,  H02M1/00

CPC分类号： H01L27/1225 ,  H01L27/1251 ,  H02M3/158 ,  H02M3/33523 ,  H02M2001/0006

摘要： A DC-DC converter is driven by single high input voltage, and includes a voltage converter circuit and a control circuit. The increase of the occupied area of the DC-DC converter is suppressed. The DC-DC converter includes an input terminal to which input voltage is applied; a voltage converter circuit connected to the input terminal, and including a first transistor; a control circuit configured to control the voltage converter circuit, and including a second transistor including a silicon material in a channel formation region; and a third transistor provided between the input terminal and the control circuit, and configured to convert the input voltage into power supply voltage that is lower than the input voltage. The first transistor and the third transistor include an oxide semiconductor material in channel formation regions. The first transistor and the third transistor are stacked over the second transistor with an insulating film provided therebetween.

摘要翻译： DC-DC转换器由单个高输入电压驱动，并且包括电压转换器电路和控制电路。 DC-DC转换器的占用面积的增加被抑制。 DC-DC转换器包括施加输入电压的输入端子; 连接到所述输入端子的电压转换器电路，并且包括第一晶体管; 控制电路，被配置为控制所述电压转换器电路，并且包括在沟道形成区域中包括硅材料的第二晶体管; 以及第三晶体管，其设置在所述输入端子和所述控制电路之间，并且被配置为将所述输入电压转换为低于所述输入电压的电源电压。 第一晶体管和第三晶体管包括沟道形成区域中的氧化物半导体材料。 第一晶体管和第三晶体管堆叠在第二晶体管上，其间设置有绝缘膜。