公开(公告)号：US08376637B2

公开(公告)日：2013-02-19

申请号：US12940101

申请日：2010-11-05

申请人： Yoshiaki Yamada ,  Yuichi Yamamoto ,  Hitoshi Kosugi ,  Seiji Fujimoto

发明人： Yoshiaki Yamada ,  Yuichi Yamamoto ,  Hitoshi Kosugi ,  Seiji Fujimoto

IPC分类号： G03D5/00

CPC分类号： H01L21/67109 ,  H01L21/67196 ,  H01L21/67201

摘要： A photoresist coating and developing apparatus 1 includes a photoresist film forming unit that forms a photoresist film on a substrate; a heat treatment unit that heats the substrate on which the photoresist film is formed by the photoresist film forming unit; a cooling unit that cools the substrate, on which the photoresist film is formed and which is heated by the heat treatment unit, to normal temperature; a heating unit 61 that heats the substrate, which is cooled to normal temperature by the cooling unit, to a predetermined temperature; a load-lock chamber L1 that unloads the substrate under depressurized atmosphere to expose the photoresist film; and a transfer device 62 that transfers the substrate from the heating unit 61 to the load-lock chamber L1.

摘要翻译： 光致抗蚀剂涂层显影装置1包括在基板上形成光致抗蚀剂膜的光致抗蚀剂膜形成单元; 热处理单元，其通过光致抗蚀剂膜形成单元加热其上形成有光致抗蚀剂膜的基板; 冷却单元，其将形成有光致抗蚀剂膜的基板和由热处理单元加热的基板冷却至常温; 加热单元61，其通过冷却单元将被冷却至常温的基板加热到预定温度; 负载锁定室L1，其在减压气氛下卸载基板以露出光致抗蚀剂膜; 以及将基板从加热单元61传递到加载锁定室L1的转移装置62。

公开(公告)号：US20110117492A1

公开(公告)日：2011-05-19

申请号：US12940101

申请日：2010-11-05

申请人： Yoshiaki Yamada ,  Yuichi Yamamoto ,  Hitoshi Kosugi

发明人： Yoshiaki Yamada ,  Yuichi Yamamoto ,  Hitoshi Kosugi

IPC分类号： G03F7/004 ,  C23C14/00

CPC分类号： H01L21/67109 ,  H01L21/67196 ,  H01L21/67201

摘要： A photoresist coating and developing apparatus 1 includes a photoresist film forming unit that forms a photoresist film on a substrate; a heat treatment unit that heats the substrate on which the photoresist film is formed by the photoresist film forming unit; a cooling unit that cools the substrate, on which the photoresist film is formed and which is heated by the heat treatment unit, to normal temperature; a heating unit 61 that heats the substrate, which is cooled to normal temperature by the cooling unit, to a predetermined temperature; a load-lock chamber L1 that unloads the substrate under depressurized atmosphere to expose the photoresist film; and a transfer device 62 that transfers the substrate from the heating unit 61 to the load-lock chamber L1.

摘要翻译： 光致抗蚀剂涂层显影装置1包括在基板上形成光致抗蚀剂膜的光致抗蚀剂膜形成单元; 热处理单元，其通过光致抗蚀剂膜形成单元加热其上形成有光致抗蚀剂膜的基板; 冷却单元，其将形成有光致抗蚀剂膜的基板和由热处理单元加热的基板冷却至常温; 加热单元61，其通过冷却单元将被冷却至常温的基板加热到预定温度; 负载锁定室L1，其在减压气氛下卸载基板以露出光致抗蚀剂膜; 以及将基板从加热单元61传递到加载锁定室L1的转移装置62。

公开(公告)号：US20080038671A1

公开(公告)日：2008-02-14

申请号：US11782233

申请日：2007-07-24

申请人： Taro YAMAMOTO ,  Hitoshi Kosugi ,  Yoshiaki Yamada ,  Yasuhito Saiga

发明人： Taro YAMAMOTO ,  Hitoshi Kosugi ,  Yoshiaki Yamada ,  Yasuhito Saiga

IPC分类号： G03B27/42 ,  G03C5/00

CPC分类号： G03F7/38 ,  G03F7/2041 ,  G03F7/70341

摘要： A pattern forming method includes forming a resist film or sequentially forming a resist film and a protection film in this order on a surface of a substrate; then, performing immersion light exposure that includes immersing the resist film or the resist film and the protection film formed on the substrate in a liquid during light exposure, thereby forming a predetermined light exposure pattern on the resist film; and performing a development process of the light exposure pattern by use of a development liquid, thereby forming a predetermined resist pattern. After the immersion light exposure and before the development process, the method further includes performing a hydrophilic process of turning a surface of the resist film or the protection film serving as a substrate surface into a hydrophilic state to allow the substrate surface to be wetted with the development liquid overall.

摘要翻译： 图案形成方法包括在基板的表面上依次形成抗蚀剂膜或依次形成抗蚀剂膜和保护膜; 然后，在曝光期间进行浸渍曝光，其中包括将抗蚀剂膜或抗蚀剂膜和形成在基板上的保护膜浸入液体中，从而在抗蚀剂膜上形成预定的曝光图案; 并通过使用显影液进行曝光图案的显影处理，由此形成预定的抗蚀剂图案。 在浸没曝光之后和显影处理之前，该方法还包括进行将抗蚀剂膜或用作基板表面的保护膜的表面转动成亲水性的亲水处理，以允许基板表面被 开发液体整体。

公开(公告)号：US08889337B2

公开(公告)日：2014-11-18

申请号：US11934308

申请日：2007-11-02

申请人： Hitoshi Kosugi ,  Taro Yamamoto ,  Yoshiaki Yamada ,  Yasuhito Saiga

发明人： Hitoshi Kosugi ,  Taro Yamamoto ,  Yoshiaki Yamada ,  Yasuhito Saiga

IPC分类号： G03F7/09 ,  B05C11/02 ,  G03F7/20 ,  G03F7/11 ,  H01L21/67

CPC分类号： G03F7/2041 ,  G03F7/11 ,  H01L21/6708 ,  H01L21/67115 ,  H01L21/6715

摘要： Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure.The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.

摘要翻译： 提供这样的成膜方法，其可以防止在浸没曝光期间从基底上包括抗蚀剂膜的表面膜的剥离。 成膜方法包括以下步骤：在晶片的表面上形成包括抗蚀剂膜和覆盖抗蚀剂膜的保护膜的表面膜，以及通过将边缘帽膜材料供给到至少包括 晶片的周边以及诸如保护膜的表面膜的周边。

公开(公告)号：US08420303B2

公开(公告)日：2013-04-16

申请号：US12957442

申请日：2010-12-01

申请人： Yoshiaki Yamada ,  Keiichi Tanaka ,  Hitoshi Kosugi

发明人： Yoshiaki Yamada ,  Keiichi Tanaka ,  Hitoshi Kosugi

IPC分类号： G03F7/26

CPC分类号： G03F7/38

摘要： A PEB unit has a first heat plate and a second heat plate. After an exposure process for a resist film for EUV on a wafer and before a development process, the PEB unit heats the wafer through the first heat plate at a first heating temperature. A heating time through the first heat plate is not less than 10 seconds and not more than 30 seconds. Thereafter, the PEB unit heats the wafer through the second heat plate at a second heating temperature lower than the first heating temperature. A temperature difference between the first heating temperature and the second heating temperature is not less than 20° C. and not more than 60° C.

摘要翻译： PEB单元具有第一加热板和第二加热板。 在晶片上并且在显影处理之前用于EUV的抗蚀剂膜的曝光处理之后，PEB单元在第一加热温度下通过第一加热板加热晶片。 通过第一加热板的加热时间不小于10秒且不超过30秒。 此后，PEB单元在低于第一加热温度的第二加热温度下通过第二加热板加热晶片。 第一加热温度和第二加热温度之间的温差不小于20℃且不大于60℃。

公开(公告)号：US20080118861A1

公开(公告)日：2008-05-22

申请号：US11934308

申请日：2007-11-02

申请人： Hitoshi Kosugi ,  Taro Yamamoto ,  Yoshiaki Yamada ,  Yasuhito Saiga

发明人： Hitoshi Kosugi ,  Taro Yamamoto ,  Yoshiaki Yamada ,  Yasuhito Saiga

IPC分类号： G03C1/00

CPC分类号： G03F7/2041 ,  G03F7/11 ,  H01L21/6708 ,  H01L21/67115 ,  H01L21/6715

摘要： Such a film forming method is provided that can prevent peeling of surface films including a resist film from a substrate during immersion exposure.The film forming method includes the steps of forming surface films including a resist film and a protective film covering the resist film over a surface of a wafer, and forming an edge cap film by supplying an edge cap film material to at least a boundary portion including a periphery of the wafer and peripheries of the surface films such as the protective film.

摘要翻译： 提供这样的成膜方法，其可以防止在浸没曝光期间从基底上包括抗蚀剂膜的表面膜的剥离。 成膜方法包括以下步骤：在晶片的表面上形成包括抗蚀剂膜和覆盖抗蚀剂膜的保护膜的表面膜，以及通过将边缘帽膜材料供给到至少包括 晶片的周边以及诸如保护膜的表面膜的周边。

公开(公告)号：US08133663B2

公开(公告)日：2012-03-13

申请号：US11782233

申请日：2007-07-24

申请人： Taro Yamamoto ,  Hitoshi Kosugi ,  Yoshiaki Yamada ,  Yasuhito Saiga

发明人： Taro Yamamoto ,  Hitoshi Kosugi ,  Yoshiaki Yamada ,  Yasuhito Saiga

IPC分类号： G03F7/26

CPC分类号： G03F7/38 ,  G03F7/2041 ,  G03F7/70341

摘要： A pattern forming method includes forming a resist film or sequentially forming a resist film and a protection film in this order on a surface of a substrate; then, performing immersion light exposure that includes immersing the resist film or the resist film and the protection film formed on the substrate in a liquid during light exposure, thereby forming a predetermined light exposure pattern on the resist film; and performing a development process of the light exposure pattern by use of a development liquid, thereby forming a predetermined resist pattern. After the immersion light exposure and before the development process, the method further includes performing a hydrophilic process of turning a surface of the resist film or the protection film serving as a substrate surface into a hydrophilic state to allow the substrate surface to be wetted with the development liquid overall.

摘要翻译： 图案形成方法包括在基板的表面上依次形成抗蚀剂膜或依次形成抗蚀剂膜和保护膜; 然后，在曝光期间进行浸渍曝光，其中包括将抗蚀剂膜或抗蚀剂膜和形成在基板上的保护膜浸入液体中，从而在抗蚀剂膜上形成预定的曝光图案; 并通过使用显影液进行曝光图案的显影处理，由此形成预定的抗蚀剂图案。 在浸没曝光之后和显影处理之前，该方法还包括进行将抗蚀剂膜或用作基板表面的保护膜的表面转动成亲水性的亲水处理，以允许基板表面被 开发液体整体。

公开(公告)号：US07826032B2

公开(公告)日：2010-11-02

申请号：US11778412

申请日：2007-07-16

申请人： Taro Yamamoto ,  Hitoshi Kosugi ,  Yoshiaki Yamada ,  Yasuhito Saiga

发明人： Taro Yamamoto ,  Hitoshi Kosugi ,  Yoshiaki Yamada ,  Yasuhito Saiga

IPC分类号： G03B27/42 ,  G21K5/10

CPC分类号： G03F7/38 ,  G03F7/168 ,  G03F7/70341 ,  G03F7/70991 ,  Y10S438/908

摘要： A circulation system for a high refractive index liquid includes a first collecting section configured to collect a high refractive index liquid used in an immersion light exposure section; a first supply section configured to supply the high refractive index liquid collected in the first collecting section to a cleaning section as a cleaning liquid; a second collecting section configured to collect the high refractive index liquid used in the cleaning section; and a second supply section configured to supply the high refractive index liquid collected in the second collecting section to the immersion light exposure section, wherein the high refractive index liquid is circulated between the immersion light exposure section and the cleaning section.

摘要翻译： 用于高折射率液体的循环系统包括：第一收集部分，被配置为收集在浸没曝光部分中使用的高折射率液体; 第一供给部构造成将收集在第一收集部中的高折射率液体供给到作为清洗液的清洗部; 第二收集部，其构造成收集在所述清洗部中使用的高折射率液体; 以及第二供给部，被构造成将在第二收集部中收集的高折射率液体供给到浸没曝光部，其中高折射率液体在浸没曝光部和清洁部之间循环。

公开(公告)号：US07651285B2

公开(公告)日：2010-01-26

申请号：US11907131

申请日：2007-10-09

申请人： Hitoshi Kosugi ,  Taro Yamamoto ,  Yoshiaki Yamada ,  Yasuhito Saiga

发明人： Hitoshi Kosugi ,  Taro Yamamoto ,  Yoshiaki Yamada ,  Yasuhito Saiga

IPC分类号： G03D5/00 ,  G03B27/32 ,  B05C11/02

CPC分类号： G03B27/52 ,  G03F7/2028

摘要： An edge exposure apparatus performing an exposure process on an edge portion of a wafer having a coating film (resist film) formed thereon includes position detection means for detecting positional data of an outer edge of a wafer held by a spin chuck, an exposure portion for performing an exposure process on the edge portion of the wafer, a development nozzle supplying a developer to the exposed region, and alignment means for horizontally moving the spin chuck. An exposure process is performed by the exposure portion on the edge portion of the wafer held by the spin chuck while the alignment means is controlled, based on the positional data of the outer edge of the wafer which is detected by the position detection means, such that the positional relation between the outer edge of the wafer and the exposure portion is kept constant.

摘要翻译： 在其上形成有涂膜（抗蚀剂膜）的晶片的边缘部分进行曝光处理的边缘曝光装置包括位置检测装置，用于检测由旋转卡盘保持的晶片的外边缘的位置数据， 对晶片的边缘部分进行曝光处理，将显影剂供应到曝光区域的显影喷嘴以及用于使旋转卡盘水平移动的对准装置。 基于由位置检测装置检测到的晶片的外边缘的位置数据，通过控制对准装置的由旋转卡盘保持的晶片的边缘部分上的曝光部分进行曝光处理， 晶片的外边缘与曝光部分之间的位置关系保持恒定。

公开(公告)号：US20080088809A1

公开(公告)日：2008-04-17

申请号：US11907131

申请日：2007-10-09

申请人： Hitoshi Kosugi ,  Taro Yamamoto ,  Yoshiaki Yamada ,  Yasuhito Saiga

发明人： Hitoshi Kosugi ,  Taro Yamamoto ,  Yoshiaki Yamada ,  Yasuhito Saiga

IPC分类号： G03B27/52 ,  G03C5/00

CPC分类号： G03B27/52 ,  G03F7/2028

摘要： An edge exposure apparatus performing an exposure process on an edge portion of a wafer having a coating film (resist film) formed thereon includes position detection means for detecting positional data of an outer edge of a wafer held by a spin chuck, an exposure portion for performing an exposure process on the edge portion of the wafer, a development nozzle supplying a developer to the exposed region, and alignment means for horizontally moving the spin chuck. An exposure process is performed by the exposure portion on the edge portion of the wafer held by the spin chuck while the alignment means is controlled, based on the positional data of the outer edge of the wafer which is detected by the position detection means, such that the positional relation between the outer edge of the wafer and the exposure portion is kept constant.

摘要翻译： 在其上形成有涂膜（抗蚀剂膜）的晶片的边缘部分进行曝光处理的边缘曝光装置包括位置检测装置，用于检测由旋转卡盘保持的晶片的外边缘的位置数据， 对晶片的边缘部分进行曝光处理，将显影剂供应到曝光区域的显影喷嘴以及用于使旋转卡盘水平移动的对准装置。 基于由位置检测装置检测到的晶片的外边缘的位置数据，通过控制对准装置的由旋转卡盘保持的晶片的边缘部分上的曝光部分进行曝光处理， 晶片的外边缘与曝光部分之间的位置关系保持恒定。