公开(公告)号：US06894248B2

公开(公告)日：2005-05-17

申请号：US10483954

申请日：2003-05-20

申请人： Yoshifumi Arakawa ,  Shigeru Yokoi

发明人： Yoshifumi Arakawa ,  Shigeru Yokoi

IPC分类号： B23K26/03 ,  B23K26/14 ,  B23K26/42 ,  H01S3/02 ,  B23K26/00 ,  B23K26/12

CPC分类号： B23K26/03 ,  B23K26/123 ,  B23K26/1436 ,  B23K26/1476 ,  B23K26/702

摘要： A laser beam machining apparatus includes a laser oscillator, a machining head which that machines a workpiece using the laser beam. An optical duct has an optical system to guide the laser beam from the laser oscillator to the machining head. Purge gas is supplied into the optical duct from a purge gas supply port, and the purge gas is output from a purge gas exhaust port. A detector detects presence of undesired gas in the optical duct.

摘要翻译： 激光束加工装置包括激光振荡器，使用激光束加工工件的加工头。 光导管具有将激光振荡器的激光束引导到加工头的光学系统。 净化气体从净化气体供给口供给到光导管中，净化气体从净化气体排出口输出。 检测器检测光导管中不需要的气体的存在。

公开(公告)号：US20050061778A1

公开(公告)日：2005-03-24

申请号：US10483954

申请日：2003-05-20

申请人： Yoshifumi Arakawa ,  Shigeru Yokoi

发明人： Yoshifumi Arakawa ,  Shigeru Yokoi

IPC分类号： B23K26/03 ,  B23K26/14 ,  B23K26/42 ,  H01S3/02 ,  B23K26/00

CPC分类号： B23K26/03 ,  B23K26/123 ,  B23K26/1436 ,  B23K26/1476 ,  B23K26/702

摘要： A laser beam machining apparatus includes a laser oscillator, a machining head which that machines a workpiece using the laser beam. An optical duct has an optical system to guide the laser beam form the laser oscillator to the machining head. Purge gas is supplied into the optical duct from a purge gas supply port, and the purge gas is output from a purge gas exhaust port. A detector detects presence of undesired gas in the optical duct.

摘要翻译： 激光束加工装置包括激光振荡器，使用激光束加工工件的加工头。 光导管具有将激光振荡器的激光束引导到加工头的光学系统。 净化气体从净化气体供给口供给到光导管中，净化气体从净化气体排出口输出。 检测器检测光导管中不需要的气体的存在。

公开(公告)号：US08114825B2

公开(公告)日：2012-02-14

申请号：US12585973

申请日：2009-09-30

申请人： Shigeru Yokoi ,  Atsushi Yamanouchi

发明人： Shigeru Yokoi ,  Atsushi Yamanouchi

IPC分类号： C11D7/50

CPC分类号： C11D11/0047 ,  C11D7/06 ,  C11D7/261 ,  C11D7/263 ,  C11D7/34 ,  C11D7/5004

摘要： Disclosed is a photoresist stripping solution consisting essentially of (a) a quaternary ammonium hydroxide (e.g., tetramethylammonium hydroxide), (b) at least one water-soluble organic solvent selected from glycols and glycol ethers (e.g., propylene glycol, ethylene glycol, diethylene glycol monobutyl ether), and (c) a non-amine water-soluble organic solvent (e.g., dimethyl sulfoxide, N-methyl-2-pyrrolidone). The photoresist stripping solution of the invention has an excellent photoresist strippability, not causing damage of swelling/coloration to acrylic transparent films used in production of liquid-crystal panels and not causing damage to electrode materials. In particular, it has an excellent photoresist strippability to remove even a thick-film negative photoresist (photosensitive dry film) used in production of semiconductor chip packages (especially, wafer-level chip size packages, W-CSP), not causing damage to copper.

摘要翻译： 公开了一种基本上由（a）季铵氢氧化物（例如四甲基氢氧化铵），（b）至少一种选自二醇和二醇醚的水溶性有机溶剂（例如丙二醇，乙二醇，二乙烯）的光致抗蚀剂剥离溶液 乙二醇单丁醚）和（c）非胺水溶性有机溶剂（例如二甲基亚砜，N-甲基-2-吡咯烷酮）。 本发明的光致抗蚀剂剥离溶液具有优异的光致抗蚀剂剥离性，不会对生产液晶面板使用的丙烯酸类透明膜造成溶胀/着色的损伤，并且不会对电极材料造成损害。 特别是具有良好的光致抗蚀剂剥离性，即使在半导体芯片封装（特别是晶片级芯片尺寸封装，W-CSP）的生产中使用的厚膜负性光致抗蚀剂（感光性干膜）也能够除去，不会对铜造成损害 。

公开(公告)号：US20100086879A1

公开(公告)日：2010-04-08

申请号：US12441514

申请日：2007-09-13

申请人： Toshikazu Takayama ,  Keita Ishiduka ,  Hideo Hada ,  Shigeru Yokoi

发明人： Toshikazu Takayama ,  Keita Ishiduka ,  Hideo Hada ,  Shigeru Yokoi

IPC分类号： G03F7/20 ,  C08L55/00 ,  C08K5/01 ,  G03F7/00

CPC分类号： G03F7/11 ,  G03F7/2041 ,  Y10S430/106 ,  Y10S430/146

摘要： Disclosed are: a material for forming a protective film to be laminated on a photoresist film, which can prevent the contamination of an exposing device with an outgas generated from the photoresist film, which has little influence on the environment, which has a high water repellent property, which sparingly causes mixing with the photoresist film, and which can form a high-resolution photoresist pattern; a method for forming a photoresist pattern; and a solution for washing/removing a protective film. Specifically disclosed are: a material for forming a protective film, which comprises (a) a non-polar polymer and (b) a non-polar solvent; a method for forming a photoresist pattern by using the material; and a solution for washing/removing a protective film, which is intended to be used in the method.

摘要翻译： 公开了一种用于形成层压在光致抗蚀剂膜上的保护膜的材料，其可以防止由具有高斥水性的对环境影响很小的光致抗蚀剂膜产生的废气对曝光装置的污染 性质，其微小地引起与光致抗蚀剂膜的混合，并且其可以形成高分辨率光致抗蚀剂图案; 形成光致抗蚀剂图案的方法; 以及洗涤/除去保护膜的溶液。 具体公开的是：形成保护膜的材料，其包含（a）非极性聚合物和（b）非极性溶剂; 通过使用该材料形成光致抗蚀剂图案的方法; 以及旨在用于该方法的保护膜的洗涤/去除溶液。

公开(公告)号：US20090291565A1

公开(公告)日：2009-11-26

申请号：US12458992

申请日：2009-07-29

申请人： Shigeru Yokoi ,  Kazumasa Wakiya ,  Takayuki Haraguchi

发明人： Shigeru Yokoi ,  Kazumasa Wakiya ,  Takayuki Haraguchi

IPC分类号： H01L21/465

CPC分类号： G03F7/425

摘要： Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.

摘要翻译： 公开了一种剥离光致抗蚀剂的方法，包括：（I）在衬底上提供光致抗蚀剂图案，其中衬底至少具有铜（Cu）布线和其上的低电介质层，并且通过使用选择性地蚀刻低电介质层 光刻胶图案作为掩模; （II）在步骤（I）之后与臭氧水和/或过氧化氢水溶液接触; 和（III）在步骤（II）之后使基底与至少含有氢氧化季铵的光致抗蚀剂剥离溶液接触。 本发明提供一种剥离光致抗蚀剂的方法，其即使在不包括至少Cu布线和低介电层的基板的微图案中的不包括O 2等离子体灰化处理的工艺中，也能够有效地剥离光刻胶膜和蚀刻残留物 在其中，如在双镶嵌形成工艺中，并且另外，本发明的方法对低电介质层的介电常数没有任何负面影响，并且确保了优异的抗腐蚀性。

公开(公告)号：US20090191478A1

公开(公告)日：2009-07-30

申请号：US12438906

申请日：2007-10-19

申请人： Ken Tanaka ,  Sho Abe ,  Shigeru Yokoi

发明人： Ken Tanaka ,  Sho Abe ,  Shigeru Yokoi

IPC分类号： G03F7/20 ,  G03F7/004

CPC分类号： G03F7/0035 ,  G03F7/0048 ,  G03F7/0382 ,  G03F7/0397 ,  H01L21/0271 ,  H01L21/3086 ,  H01L21/3088

摘要： A novel method of forming a resist pattern in which thickness loss from the resist pattern is reduced, and a negative resist composition that can be used in this method of forming a resist pattern. The method of forming a resist pattern includes: forming a first resist film by applying a first resist composition to a support, forming a first resist pattern by selectively exposing the first resist film through a first mask pattern and then developing the first resist film, forming a second resist film by applying a negative resist composition containing an ether-based organic solvent (S″) having no hydroxyl groups onto the support having the first resist pattern formed thereon, and forming a resist pattern by selectively exposing the second resist film through a second mask pattern and then developing the second resist film.

摘要翻译： 形成抗蚀剂图案的厚度损失降低的抗蚀剂图案的新颖方法以及可用于形成抗蚀剂图案的方法中的负型抗蚀剂组合物。 形成抗蚀剂图案的方法包括：通过将第一抗蚀剂组合物施加到载体上来形成第一抗蚀剂膜，通过选择性地将第一抗蚀剂膜通过第一掩模图案曝光，然后显影第一抗蚀剂膜，形成第一抗蚀剂图案，形成第一抗蚀剂图案 通过将不含羟基的醚类有机溶剂（S“）的负性抗蚀剂组合物涂布在其上形成有第一抗蚀剂图案的载体上，形成第二抗蚀剂膜，并通过选择性地使第二抗蚀剂膜通过 第二掩模图案，然后显影第二抗蚀剂膜。

公开(公告)号：US20080011714A1

公开(公告)日：2008-01-17

申请号：US11898174

申请日：2007-09-10

申请人： Shigeru Yokoi ,  Kazumasa Wakiya

发明人： Shigeru Yokoi ,  Kazumasa Wakiya

IPC分类号： B44C1/22 ,  C09K13/06

CPC分类号： G03F7/425 ,  G03F7/423 ,  G03F7/426 ,  H01L21/02071 ,  H01L21/31116

摘要： A photoresist stripping solution which comprises (a) a salt of hydrofluoric acid with a base free from metal ions, (b) a water-soluble organic solvent, (c) a mercapto group containing corrosion inhibitor, and (d) water, and a method of stripping photoresists with the use of the same are disclosed. In case of using ammonium fluoride as component (a), the photoresist stripping solution may further contain (e) a salt of hydrofluoric acid with a quaternary ammonium hydroxide, such as tetramethylammonium hydroxide, tetrapropylammonium hydroxide, etc., and/or an alkanolamine. The photoresist stripping solution of the present invention has an excellent effect of protecting both Al— and Cu-based metal wiring conductors from corrosion, of efficiently stripping photoresist films and post-ashing residues, and is free from the precipitation of the corrosion inhibitor.

摘要翻译： 一种光致抗蚀剂剥离溶液，其包含（a）不含金属离子的碱的氢氟酸盐，（b）水溶性有机溶剂，（c）含巯基的缓蚀剂，和（d）水，和 公开了使用其剥离光致抗蚀剂的方法。 在使用氟化铵作为组分（a）的情况下，光致抗蚀剂剥离溶液还可以含有（e）氢氟酸盐与季铵氢氧化物如四甲基氢氧化铵，四丙基氢氧化铵等和/或链烷醇胺。 本发明的光致抗蚀剂剥离溶液具有优异的保护Al和Cu基金属布线导体免受腐蚀，有效地剥离光致抗蚀剂膜和后灰化残留物的作用，并且没有腐蚀抑制剂的沉淀。

公开(公告)号：US20070243494A1

公开(公告)日：2007-10-18

申请号：US11812160

申请日：2007-06-15

申请人： Shigeru Yokoi ,  Kazumasa Wakiya

发明人： Shigeru Yokoi ,  Kazumasa Wakiya

IPC分类号： G03F7/32

CPC分类号： G03F7/422 ,  C11D7/265 ,  C11D7/3218 ,  C11D7/34 ,  C11D11/0047 ,  G03F7/425

摘要： A photoresist stripping solution comprising (a) a carboxyl group-containing acidic compound, (b) at least one basic compound (for example, monoethanolamine, tetraalkylammonium) selected from among alkanolamines and specific quaternary ammonium hydroxides, (c) a sulfur-containing corrosion inhibitor and (d) water, and having a pH value of 3.5-5.5; and a method of stripping photoresists using the same are disclosed. The present invention provides a photoresist stripping solution which is excellent in the effect of protecting metal wirings (in particular, Cu wirings) from corrosion, never damages interlevel films, such as low dielectric layers or organic SOG layers, and shows excellent strippability of photoresist films and post-ashing residues.

摘要翻译： 一种光致抗蚀剂剥离溶液，其包含（a）含羧基的酸性化合物，（b）至少一种选自烷醇胺和特定季铵氢氧化物的碱性化合物（例如单乙醇胺，四烷基铵），（c）含硫腐蚀 抑制剂和（d）水，pH值为3.5-5.5; 并公开了使用其剥离光致抗蚀剂的方法。 本发明提供一种光刻胶剥离溶液，其保护金属布线（特别是铜布线）不受腐蚀的影响，不会损害诸如低电介质层或有机SOG层的层间膜，并且显示出优异的光致抗蚀剂剥离性 和后灰化残留物。

公开(公告)号：US20050187118A1

公开(公告)日：2005-08-25

申请号：US11034864

申请日：2005-01-14

申请人： Takayuki Haraguchi ,  Shigeru Yokoi ,  Kazumasa Wakiya

发明人： Takayuki Haraguchi ,  Shigeru Yokoi ,  Kazumasa Wakiya

IPC分类号： H01L21/3213 ,  C11D7/10 ,  C11D7/26 ,  C11D7/50 ,  C11D11/00 ,  C23G1/12 ,  C23G1/22 ,  G03F7/42 ,  H01L21/304 ,  C23G1/00 ,  C11D1/00

CPC分类号： C11D7/10 ,  C11D7/264 ,  C11D7/5004 ,  C11D11/0047 ,  C23G1/125 ,  C23G1/22 ,  G03F7/423 ,  G03F7/426

摘要： The stripping-cleaning solution can advantageously strip a deposit generated on the top surface of a wiring without excessively etching the metal layer which constitutes the sidewall of the metal wiring pattern and the top surface of the wiring. The stripping-cleaning solution comprises at least a fluorine compound, a water-soluble organic solvent, water, and a bidentate ligand in an amount of 0.1 to 20% by mass based on the total mass of the tripping-cleaning solution. Alternatively, the stripping-cleaning solution comprises at least a basic aqueous solution, at least one selected from an organic compound having a carboxyl group and an anhydride thereof, water, and a bidentate ligand in an amount of 0.5 to 10% by mass based on the total mass of the stripping-cleaning solution.

摘要翻译： 剥离清洗液可以有利地剥离在配线的顶面上产生的沉积物，而不会过度地蚀刻构成金属布线图案的侧壁的金属层和布线的顶面。 剥离清洗液至少含有相对于脱扣清洗液的总质量为0.1〜20质量％的氟化合物，水溶性有机溶剂，水和二齿配位体。 或者，汽提清洗液至少含有碱性水溶液，选自有羧基羧酸的有机化合物及其酸酐中的至少一种，水和二齿配位体，其含量为0.5〜10质量％ 汽提清洁溶液的总质量。

公开(公告)号：US20050176259A1

公开(公告)日：2005-08-11

申请号：US10512586

申请日：2003-04-25

申请人： Shigeru Yokoi ,  Kazumasa Wakiya ,  Takayuki Haraguchi

发明人： Shigeru Yokoi ,  Kazumasa Wakiya ,  Takayuki Haraguchi

IPC分类号： G03F7/42 ,  H01L21/027 ,  H01L21/304 ,  C23F1/00 ,  B44C1/22 ,  C03C15/00 ,  C03C25/68

CPC分类号： G03F7/425

摘要： Disclosed is a method for stripping a photoresist comprising: (I) providing a photoresist pattern on a substrate where the substrate has at least a copper (Cu) wiring and a low-dielectric layer thereon, and selectively etching the low-dielectric layer by using the photoresist pattern as a mask; (II) contacting the substrate after the step (I), with ozone water and/or aqueous hydrogen peroxide; and (III) contacting the substrate after the step (II), with a photoresist stripping solution that contains at least a quaternary ammonium hydroxide. The present invention provides a method for stripping a photoresist that enables to strip effectively photoresist films and etching residues after etching step even in a process not including an O2 plasma ashing treatment in micropatterning of a substrate having at least Cu wiring and a low-dielectric layer thereon, as in a dual damascene forming process, and, in addition, the method of the invention does not have any negative influence on the dielectric constant of the low-dielectric layer, and ensures an excellent anti-corrosivity.

摘要翻译： 公开了一种剥离光致抗蚀剂的方法，包括：（I）在衬底上提供光致抗蚀剂图案，其中衬底至少具有铜（Cu）布线和其上的低电介质层，并且通过使用选择性地蚀刻低电介质层 光刻胶图案作为掩模; （II）在步骤（I）之后与臭氧水和/或过氧化氢水溶液接触; 和（III）在步骤（II）之后使基底与至少含有氢氧化季铵的光致抗蚀剂剥离溶液接触。 本发明提供了一种剥离光致抗蚀剂的方法，其即使在不包括O 2等离子体灰浆化处理的工艺中，也能够有效地剥离光致抗蚀剂膜和蚀刻残留物，在至少具有至少 Cu布线和其中的低介电层，如在双镶嵌形成工艺中，此外，本发明的方法对低电介质层的介电常数没有任何负面影响，并且确保了优异的抗 - 腐蚀性