公开(公告)号：US20080227233A1

公开(公告)日：2008-09-18

申请号：US11837676

申请日：2007-08-13

Applicant: Yoshihiko Hanamaki ,  Kenichi Ono

Inventor： Yoshihiko Hanamaki ,  Kenichi Ono

IPC: H01L21/00

CPC classification number: H01S5/0421 ,  H01L33/02 ,  H01L33/305 ,  H01S5/3054

Abstract: A method for manufacturing a semiconductor optical device includes forming a BDR (Band Discontinuity Reduction) layer of a first conductivity type doped with an impurity, depositing a contact layer of the first conductivity type in contact with the BDR layer after forming the BDR layer, the contact layer being doped with the same impurity as the BDR layer and used to form an electrode, and heat treating after forming the contact layer.

Abstract translation: 一种制造半导体光学器件的方法包括：形成掺杂有杂质的第一导电类型的BDR（带断续连续性降低）层;在形成BDR层之后，沉积与BDR层接触的第一导电类型的接触层， 接触层掺杂与BDR层相同的杂质并用于形成电极，以及在形成接触层之后进行热处理。

公开(公告)号：US20060220037A1

公开(公告)日：2006-10-05

申请号：US11263997

申请日：2005-11-02

Applicant: Yoshihiko Hanamaki ,  Kenichi Ono ,  Kimio Shigihara ,  Kazushige Kawasaki ,  Kimitaka Shibata ,  Naoyuki Shimada

Inventor： Yoshihiko Hanamaki ,  Kenichi Ono ,  Kimio Shigihara ,  Kazushige Kawasaki ,  Kimitaka Shibata ,  Naoyuki Shimada

IPC: H01L31/12

CPC classification number: H01S5/22 ,  H01S5/323

Abstract: A semiconductor optical element having a includes an n-type GaAs buffer layer, an n-type AlGaInP cladding layer, a first InGaAsP (including zero As content) guide layer without added dopant impurities, an InGaAsP (including zero In content) active layer, a second InGaAsP (including zero As content) guide layer without added dopant impurities, a p-type AlGaInP cladding layer, a p-type band discontinuity reduction layer, and a p-type GaAs contact layer sequentially laminated on an n-type GaAs substrate C or Mg is the dopant impurity in the p-type-GaAs contact layer, the p-type band discontinuity reduction layer, and the p-type AlGaInP cladding layer.

Abstract translation: 具有包括n型GaAs缓冲层，n型AlGaInP包层，没有添加掺杂杂质的第一InGaAsP（包括零As含量）引导层的半导体光学元件，InGaAsP（包括0 In含量）有源层， 没有添加掺杂剂杂质的第二InGaAsP（包括零As含量）引导层，顺序地层叠在n型GaAs衬底上的p型AlGaInP包层，p型带不连续性还原层和p型GaAs接触层 C或Mg是p型GaAs接触层中的掺杂剂杂质，p型带不连续性还原层和p型AlGaInP包层。

公开(公告)号：US20050141800A1

公开(公告)日：2005-06-30

申请号：US11012278

申请日：2004-12-16

Applicant: Yasunori Miyazaki ,  Hitoshi Tada ,  Yoshihiko Hanamaki

Inventor： Yasunori Miyazaki ,  Hitoshi Tada ,  Yoshihiko Hanamaki

IPC: G02F1/025 ,  G02F1/01

CPC classification number: G02F1/025

Abstract: A waveguide semiconductor optical device has a pin junction on a semi-insulating substrate. The pin junction consists of an n-type cladding layer, an i-type absorption layer, and a p-type cladding layer. The waveguide semiconductor optical device includes a dopant impurity concentration not higher than 1016 cm-3 in the i-type absorption layer.

Abstract translation: 波导半导体光学器件在半绝缘衬底上具有pin结。 pin结由n型包覆层，i型吸收层和p型覆层组成。 该波导半导体光学器件包括在i型吸收层中不高于10 16 cm -3的掺杂剂杂质浓度。

公开(公告)号：US06803597B2

公开(公告)日：2004-10-12

申请号：US10322675

申请日：2002-12-19

Applicant: Chikara Watatani ,  Yoshihiko Hanamaki

Inventor： Chikara Watatani ,  Yoshihiko Hanamaki

IPC: H01L2915

CPC classification number: B82Y20/00 ,  H01L33/04 ,  H01L33/06 ,  H01S5/2013 ,  H01S5/3215 ,  H01S5/3216 ,  H01S5/3409 ,  H01S5/343

Abstract: In a semiconductor light-emitting device, an active layer has a multi quantum well structure (MQW) barrier layers and quantum well layers alternately arranged. Each of the cladding layers has a multi quantum barrier structure (MQB) including barrier layers and well layers alternately arranged. The multi quantum barrier (MQB) of each of the cladding layers varies in a graded or stepwise form. Thus, charge carriers are prevented from overflowing from the active layer, preventing cut-off of a guided wave mode, increasing reflectance of electrons entering the energy barriers, and improving temperature characteristics.

Abstract translation: 在半导体发光器件中，有源层具有交替布置的多量子阱结构（MQW）势垒层和量子阱层。 每个包覆层具有包含交替布置的阻挡层和阱层的多量子势垒结构（MQB）。 每个包覆层的多量子势垒（MQB）以渐变或逐步的形式变化。 因此，防止电荷载流子从有源层溢出，防止导波模式的截止，增加进入能量屏障的电子的反射率，以及改善温度特性。

公开(公告)号：US06774389B2

公开(公告)日：2004-08-10

申请号：US10290254

申请日：2002-11-08

Applicant: Yoshihiko Hanamaki

Inventor： Yoshihiko Hanamaki

IPC: H01L2906

CPC classification number: H01L33/06 ,  B82Y20/00 ,  H01S5/2231 ,  H01S5/3054 ,  H01S5/3086

Abstract: A semiconductor optical device with improved optical gain and enhanced switching characteristics. The semiconductor optical device includes positive and negative electrodes for providing holes and electrons, respectively. The semiconductor optical device also includes an active layer between the positive and negative electrodes. The active layer includes a multiple quantum well structure having p-type quantum well layers and barrier layers. The quantum well layers are doped with an impurity that diffuses less than zinc so that trapping holes are produced and excessive electrons contributing no light emission are quenched by the trapping holes. The impurity can be beryllium, magnesium, or carbon.

Abstract translation: 具有改善的光学增益和增强的开关特性的半导体光学器件。 半导体光学器件分别包括用于提供空穴和电子的正极和负极。 半导体光学器件还包括在正极和负极之间的有源层。 有源层包括具有p型量子阱层和阻挡层的多量子阱结构。 量子阱层掺杂有杂质，其扩散小于锌，从而产生捕获空穴，并且不产生发光的过量电子被捕获孔骤冷。 杂质可以是铍，镁或碳。

公开(公告)号：US20080254563A1

公开(公告)日：2008-10-16

申请号：US12019665

申请日：2008-01-25

Applicant: Yoshihiko Hanamaki ,  Takehiro Nishida ,  Makoto Takada ,  Kenichi Ono

Inventor： Yoshihiko Hanamaki ,  Takehiro Nishida ,  Makoto Takada ,  Kenichi Ono

IPC: H01L21/02

CPC classification number: H01S5/22 ,  H01S5/162 ,  H01S5/209 ,  H01S2304/04

Abstract: A method for manufacturing a semiconductor optical device includes: forming a p-type cladding layer; forming a capping layer on the p-type cladding layer the capping layer being selectively etchable relative to the p-type cladding layer; forming a through film on the capping layer; forming a window structure by in implantation; removing the through film after the ion implantation; and selectively removing the capping layer using a chemical solution.

Abstract translation: 一种半导体光学器件的制造方法包括：形成p型覆层; 在所述p型覆层上形成覆盖层，所述覆盖层相对于所述p型覆层可选择性地蚀刻; 在覆盖层上形成通孔; 通过植入形成窗户结构; 离子注入后去除通膜; 并使用化学溶液选择性地去除覆盖层。

公开(公告)号：US20070099355A1

公开(公告)日：2007-05-03

申请号：US11453981

申请日：2006-06-16

Applicant: Yoshihiko Hanamaki

Inventor： Yoshihiko Hanamaki

IPC: H01L21/84

CPC classification number: C30B25/12 ,  C30B29/40

Abstract: A method of manufacturing a semiconductor film including a setting a substrate on a satellite; and a forming an alloy semiconductor thin film containing at least two different group V elements or group IV elements on the substrate by metal organic chemical vapor deposition while supplying thermal energy to the substrate through the satellite. The satellite comprises a flat satellite body on which the substrate is placed and a perimeter fixing section which fixes the perimeter of the substrate. The perimeter fixing section contacts only part of the perimeter of the substrate, instead of the entire perimeter of the substrate.

Abstract translation: 一种制造包括在卫星上设置衬底的半导体膜的方法; 以及通过金属有机化学气相沉积在衬底上形成含有至少两种不同的V族元素或IV族元素的合金半导体薄膜，同时通过卫星向衬底提供热能。 该卫星包括其上放置基板的扁平卫星体和固定基板周边的周边固定部分。 周边固定部分仅接触基板周边的一部分，而不是基板的整个周边。

公开(公告)号：US07075119B2

公开(公告)日：2006-07-11

申请号：US11135323

申请日：2005-05-24

Applicant: Yoshihiko Hanamaki

Inventor： Yoshihiko Hanamaki

IPC: H01L33/00

CPC classification number: H01S5/227 ,  H01L33/145 ,  H01L33/30 ,  H01S5/2224 ,  H01S5/3054 ,  H01S5/3235 ,  H01S2304/04

Abstract: In an optical semiconductor device including, at least, an n-type semiconductor layer having n-type conductivity, an active layer, a p-type semiconductor layer having p-type conductivity, current blocking layers doped with Fe are located on opposite sides of the p-type semiconductor layer. Fe and Be are simultaneously supplied as dopants when forming the p-type semiconductor layer. In this event, the flow rates of source materials supplying the respective elements are adjusted so that the p-type semiconductor layer has a hole concentration of about 1.0×1018/cm3 and an Fe concentration of about 2×1016 to 8×1016/cm3.

公开(公告)号：US06674784B2

公开(公告)日：2004-01-06

申请号：US09861651

申请日：2001-05-22

Applicant: Tohru Takiguchi ,  Yoshihiko Hanamaki

Inventor： Tohru Takiguchi ,  Yoshihiko Hanamaki

IPC: H01S308

CPC classification number: H01S5/22 ,  H01S5/12

Abstract: A distributed feedback laser device includes a semiconductor base having a ridge waveguide structure projecting from its principal plane. The ridge waveguide structure extends with a predetermined width from one edge of the semiconductor base to an opposite edge. A diffraction grating layer is confined within the ridge structure. The ridge waveguide structure is formed by etching using an SiO2 film and a resist film as masks so that the diffraction grating layer is produced with substantially the same width as, or a less width than, the width of the ridge waveguide structure. A &lgr;/4 shift diffraction grating or a chirped diffraction grating is preferably employed.

Abstract translation: 分布式反馈激光装置包括具有从其主平面突出的脊波导结构的半导体基座。 脊形波导结构以从半导体基底的一个边缘到相对边缘的预定宽度延伸。 衍射光栅层被限制在脊结构内。 通过使用SiO 2膜和抗蚀剂膜作为掩模进行蚀刻来形成脊波导结构，使得衍射光栅层以与脊波导结构的宽度基本相同的宽度或更小的宽度制造。 优选使用λ/ 4移动衍射光栅或者啁啾衍射光栅。

公开(公告)号：US07759148B2

公开(公告)日：2010-07-20

申请号：US11837676

申请日：2007-08-13

Applicant: Yoshihiko Hanamaki ,  Kenichi Ono

Inventor： Yoshihiko Hanamaki ,  Kenichi Ono

IPC: H01L21/00

CPC classification number: H01S5/0421 ,  H01L33/02 ,  H01L33/305 ,  H01S5/3054

Abstract: A method for manufacturing a semiconductor optical device includes forming a BDR (Band Discontinuity Reduction) layer of a first conductivity type doped with an impurity, depositing a contact layer of the first conductivity type in contact with the BDR layer after forming the the BDR layer, the contact layer being doped with the same impurity as the BDR layer and used to form an electrode, and heat treating after forming the contact layer.

Abstract translation: 一种制造半导体光学器件的方法包括：形成掺杂有杂质的第一导电类型的BDR（带断续连续性降低）层;在形成BDR层之后，沉积第一导电类型的接触层与BDR层接触; 接触层掺杂与BDR层相同的杂质并用于形成电极，以及在形成接触层之后进行热处理。