公开(公告)号：US06189749B1

公开(公告)日：2001-02-20

申请号：US09346926

申请日：1999-07-02

申请人： Yoshihiko Sato ,  Yasuyuki Shibata ,  Kazuhiko Maruyama

发明人： Yoshihiko Sato ,  Yasuyuki Shibata ,  Kazuhiko Maruyama

IPC分类号： B62D4300

CPC分类号： B62D43/08 ,  B62D43/10

摘要： A device for fixing a flat tire (30) in an automobile which has an accommodating space (5) behind a bucket seat (1) in which the bucket seat is accommodated which has been folded, comprises: a flat tire fixing threaded member (34); a vehicle body screw hole (20) which is located near the front edge of the accommodating space (5), and is threadably engaged with the threaded member (34); and a bracket (40) which has a first screw hole (42) which is threadably engaged with the vehicle body screw hole (20), and a second screw hole (44a) with which the flat tire fixing threaded member (34) is threadably engaged. In the case where the bucket seat is folded and accommodated, with the vehicle body screw hole 20 set in alignment with one of the bolt holes of the flat tire (30) the latter (30) is fixedly secured to the vehicle body screw hole (20) by means of the threaded member (34). In the case where the bucket set is held raised, with the first screw hole (42) of the bracket (40) set in alignment with the vehicle body screw hole (20) the bracket (40) is threadably engaged with the vehicle body (3), and thereafter with one of the bolt holds of the flat tire (30) set in alignment with the second screw hole (44a) of the bracket (40) the flat tire (30) is secured to the second screw hole (44a) by means of the threaded member (34).

摘要翻译： 一种用于将扁平轮胎（30）固定在汽车中的装置，该汽车具有容纳空间（5），所述容纳空间（5）位于已经折叠的容纳所述斗式座椅的铲斗座（1）的后面，包括：平坦的轮胎固定螺纹构件 ）; 位于容纳空间（5）的前边缘附近并与螺纹构件（34）螺纹接合的车体螺纹孔（20）; 以及支架（40），其具有与车体螺纹孔（20）螺纹接合的第一螺纹孔（42），以及第二螺纹孔（44a），所述扁平轮胎固定螺纹构件（34）通过所述第二螺纹孔螺纹连接 从事 在铲斗座被折叠并容纳的情况下，车身螺钉孔20与扁平轮胎（30）的一个螺栓孔对准，后者（30）固定地固定到车身螺钉孔（ 20）通过螺纹构件（34）。 在斗装置保持升起的情况下，当托架（40）的第一螺孔（42）与车身螺钉孔（20）对准时，托架（40）与车身螺纹接合 3），然后将扁平轮胎（30）的螺栓保持件中的一个与支架（40）的第二螺钉孔（44a）对准地设置，该扁平轮胎（30）固定到第二螺钉孔（44a） ）通过螺纹构件（34）。

公开(公告)号：US6145907A

公开(公告)日：2000-11-14

申请号：US163126

申请日：1998-09-29

申请人： Kazuhiko Maruyama ,  Yasuyuki Shibata ,  Gary Evert

发明人： Kazuhiko Maruyama ,  Yasuyuki Shibata ,  Gary Evert

IPC分类号： B62D25/20 ,  B62D43/10 ,  B60R7/06

CPC分类号： B62D43/10

摘要： An upper cross member and a lower cross member are formed integrally together to include a cross member having the shape of a box in cross section, and to the front and rear sides thereof are joined floor panels of an automobile. A trunk room or storage space is formed between right and left side frames to which are joined both ends of the cross member. A lid for opening and closing an opening located in space between a front seat and a center seat of the automobile is pivotally supported by the cross member that forms a portion of the upper wall of the trunk room. The lid is normally locked to the floor panel by a locking mechanism having a grip. The lid when opened is maintained at its open position by anchoring a hook attached to an end of a wire to an engaging portion provided at the back of the front seat. Thus, the trunk room is formed under the lower surfaces of the floor panels, enabling a spare tire or other articles to be easily put therein or taken out therefrom, yet maintaining rigidity of the car body.

摘要翻译： 上横向构件和下横向构件整体地形成为包括横截面为箱形的横向构件，并且其前后侧连接在汽车的地板面板上。 在与横梁的两端连接的左右侧框架之间形成有行李箱或存放空间。 用于打开和关闭位于汽车的前排座椅和中心座椅之间的空间中的开口的盖子被形成行李箱的上壁的一部分的横向构件枢转地支撑。 盖通常通过具有把手的锁定机构锁定在地板面板上。 打开时的盖子通过将附接到线的一端的钩锚定到设置在前座椅后部的接合部分而保持在其打开位置。 因此，行李箱室形成在地板的下表面下方，能够将备用轮胎或其他物品容易地放入其中或从其中取出，同时保持车身的刚性。

公开(公告)号：US08236672B2

公开(公告)日：2012-08-07

申请号：US12636961

申请日：2009-12-14

申请人： Takako Chinone ,  Ji-Hao Liang ,  Yasuyuki Shibata ,  Jiro Higashino

发明人： Takako Chinone ,  Ji-Hao Liang ,  Yasuyuki Shibata ,  Jiro Higashino

IPC分类号： H01L21/36 ,  H01L21/20 ,  H01L21/00 ,  H01L29/24 ,  H01L21/18 ,  H01L27/108

CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02636 ,  H01L33/007 ,  H01L33/0079

摘要： A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer.

摘要翻译： 通过以不同的生长速率生长III族氮化物的第一和第二生长步骤的多个循环的交替方式，在生长衬底上形成具有多个空腔的含空腔层。 随后在空腔含有层上形成半导体外延层，然后将支撑衬底接合到半导体外延层。 生长衬底与含空腔层分离。

公开(公告)号：US20110271918A1

公开(公告)日：2011-11-10

申请号：US13142664

申请日：2009-02-25

申请人： Takashi Nishikiori ,  Yasuyuki Shibata ,  Shinya Misaka

发明人： Takashi Nishikiori ,  Yasuyuki Shibata ,  Shinya Misaka

IPC分类号： F02D13/08

CPC分类号： F02D13/08 ,  B60K6/445 ,  F01L1/267 ,  F01L13/0036 ,  F01L2013/0052 ,  F01L2820/031 ,  F02D29/02 ,  F02D41/0002 ,  F02D41/20 ,  F02D2013/0292 ,  F02D2041/0265 ,  F02D2041/2024 ,  Y02T10/18 ,  Y02T10/6239 ,  Y10T74/2107

摘要： Provided is a variable valve operating apparatus for an internal combustion engine, which can favorably reduce electric power consumption in a vehicle system that may stop the internal combustion engine during power-up of the vehicle system.A changeover mechanism 90 is provided which is capable of switching between a connection state in which a first rocker arm 96 and a second rocker arm 98 are in connection with each other via a changeover pin 112, 118 and a disconnection state in which the connection is released. The changeover mechanism 90 performs energization of actuators 130 for each cylinder in a case in which fuel supply to the internal combustion engine 12 is stopped in response to an establishment of a predetermined stop condition. The above-described energization of the actuator 130 for each cylinder is stopped in a case in which a crankshaft 78 of the internal combustion engine 12 stops rotating during an energization time period of the actuator 130 and in which the crankshaft 78 is not driven by an external power.

摘要翻译： 提供一种用于内燃机的可变气门操作装置，其能够有利地降低在车辆系统通电期间可能停止内燃机的车辆系统的电力消耗。 提供了切换机构90，其能够经由切换销112,118在第一摇臂96和第二摇臂98彼此连接的连接状态之间切换，并且连接是断开状态 释放 在内燃机12的燃料供应停止响应于预定停止条件的建立的情况下，转换机构90对每个气缸执行致动器130的通电。 在内燃机12的曲轴78在致动器130的通电时间段内停止旋转的情况下，每个气缸的致动器130的上述通电被停止，并且曲轴78不被驱动 外部电源

公开(公告)号：US08772808B2

公开(公告)日：2014-07-08

申请号：US13426141

申请日：2012-03-21

申请人： Yasuyuki Shibata ,  Ji-Hao Liang ,  Jiro Higashino

发明人： Yasuyuki Shibata ,  Ji-Hao Liang ,  Jiro Higashino

IPC分类号： H01L33/00

CPC分类号： H01L33/0095 ,  H01L33/0079 ,  H01L33/44

摘要： A manufacturing method of a semiconductor light emitting element, includes forming sacrifice portions within the width of street portions in a semiconductor laminated body, and performing wet etching to remove the sacrifice portions together with their neighboring portions, thereby removing etching residuals in the streets.

摘要翻译： 半导体发光元件的制造方法，包括在半导体层叠体中在街道部分的宽度内形成牺牲部分，并进行湿蚀刻以与其相邻部分一起去除牺牲部分，从而去除街道中的蚀刻残留物。

公开(公告)号：US08664028B2

公开(公告)日：2014-03-04

申请号：US13416344

申请日：2012-03-09

申请人： Yasuyuki Shibata ,  Ji-Hao Liang

发明人： Yasuyuki Shibata ,  Ji-Hao Liang

IPC分类号： H01L21/18 ,  H01L31/18

CPC分类号： H01L21/02664 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/187 ,  H01L33/007 ,  H01L33/0079

摘要： (a) On a growth substrate, a void-containing layer that is made of a group III nitride compound semiconductor and contains voids is formed. (b) On the void-containing layer, an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids is formed. (c) On the n-type layer, an active layer made of a group III nitride compound semiconductor is formed. (d) On the active layer, a p-type layer made of a p-type group III nitride compound semiconductor is formed. (e) A support substrate is bonded above the p-type layer. (f) The growth substrate is peeled off at the boundary where the voids are produced. In the above step (a) or (b), the supply of at least part of the materials that form the layer is decreased, while heating, before the voids are closed.

摘要翻译： （a）在生长基板上形成由III族氮化物半导体构成且含有空隙的含空隙层。 （b）在含空隙层上，形成由n型III族氮化物半导体构成并用于封闭空隙的n型层。 （c）在n型层上形成由III族氮化物化合物半导体构成的有源层。 （d）在有源层上形成由p型III族氮化物半导体构成的p型层。 （e）在p型层上方结合有支撑基板。 （f）生长衬底在产生空隙的边界处被剥离。 在上述步骤（a）或（b）中，在空隙闭合之前，至少部分形成层的材料的供应在加热的同时减少。

公开(公告)号：US20120231568A1

公开(公告)日：2012-09-13

申请号：US13416344

申请日：2012-03-09

申请人： Yasuyuki Shibata ,  Ji-Hao Liang

发明人： Yasuyuki Shibata ,  Ji-Hao Liang

IPC分类号： H01L33/06

CPC分类号： H01L21/02664 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02513 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/0259 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/0265 ,  H01L21/187 ,  H01L33/007 ,  H01L33/0079

摘要： (a) On a growth substrate, a void-containing layer that is made of a group III nitride compound semiconductor and contains voids is formed. (b) On the void-containing layer, an n-type layer that is made of an n-type group III nitride compound semiconductor and serves to close the voids is formed. (c) On the n-type layer, an active layer made of a group III nitride compound semiconductor is formed. (d) On the active layer, a p-type layer made of a p-type group III nitride compound semiconductor is formed. (e) A support substrate is bonded above the p-type layer. (f) The growth substrate is peeled off at the boundary where the voids are produced. In the above step (a) or (b), the supply of at least part of the materials that form the layer is decreased, while heating, before the voids are closed.

摘要翻译： （a）在生长基板上形成由III族氮化物半导体构成且含有空隙的含空隙层。 （b）在含空隙层上，形成由n型III族氮化物半导体构成并用于封闭空隙的n型层。 （c）在n型层上形成由III族氮化物化合物半导体构成的有源层。 （d）在有源层上形成由p型III族氮化物半导体构成的p型层。 （e）在p型层上方结合有支撑基板。 （f）生长衬底在产生空隙的边界处被剥离。 在上述步骤（a）或（b）中，在空隙闭合之前，至少部分形成层的材料的供应在加热的同时减少。

公开(公告)号：US20100155740A1

公开(公告)日：2010-06-24

申请号：US12636961

申请日：2009-12-14

申请人： Takako CHINONE ,  Ji-Hao Liang ,  Yasuyuki Shibata ,  Jiro Higashino

发明人： Takako CHINONE ,  Ji-Hao Liang ,  Yasuyuki Shibata ,  Jiro Higashino

IPC分类号： H01L29/20 ,  H01L21/18

CPC分类号： H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02636 ,  H01L33/007 ,  H01L33/0079

摘要： A cavity-containing layer having a plurality of cavities is formed on a growth substrate by carrying out in alternating fashion a plurality of cycles of a first and second growth steps of growing a group III nitride at growth rates different from each other. The semiconductor epitaxial layer is subsequently formed on the cavity-containing layer, after which a support substrate is bonded to the semiconductor epitaxial layer. The growth substrate is separated from the cavity-containing layer.

摘要翻译： 通过以不同的生长速率生长III族氮化物的第一和第二生长步骤的多个循环的交替方式，在生长衬底上形成具有多个空腔的含空腔层。 随后在空腔含有层上形成半导体外延层，然后将支撑衬底接合到半导体外延层。 生长衬底与含空腔层分离。

公开(公告)号：US20100148309A1

公开(公告)日：2010-06-17

申请号：US12636934

申请日：2009-12-14

申请人： Ji-Hao Liang ,  Takako Chinone ,  Yasuyuki Shibata ,  Jiro Higashino

发明人： Ji-Hao Liang ,  Takako Chinone ,  Yasuyuki Shibata ,  Jiro Higashino

IPC分类号： H01L29/20 ,  H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/0242 ,  H01L21/02433 ,  H01L21/02516 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/0265 ,  H01L33/007 ,  H01L33/0079

摘要： There is provided a method for manufacturing a semiconductor device in which a selective growth mask for partially covering a growth substrate is formed on a growth substrate; a buffer layer that is thicker than the mask is formed on a non-mask part not covered by the mask on the growth substrate, and a predetermined facet is exposed on the surface of the buffer layer; a semiconductor film is laterally grown using the buffer layer as a starting point, and a lateral growth layer for covering the mask is formed while cavities are formed on the upper part of the mask; and a device function layer is epitaxially grown on the lateral growth layer. The cavity formation step includes a first step for growing a semiconductor film at a growth rate and a second step for growing another semiconductor film at another growth rate mutually different from the first growth rate, wherein the first and second steps are carried out a plurality of times in alternating fashion.

摘要翻译： 提供一种制造半导体器件的方法，其中在生长衬底上形成用于部分覆盖生长衬底的选择性生长掩模; 在生长衬底上未被掩模覆盖的非掩模部分上形成比掩模厚的缓冲层，并且在缓冲层的表面上露出预定的刻面; 使用缓冲层作为起点横向生长半导体膜，并且形成用于覆盖掩模的横向生长层，同时在掩模的上部形成空腔; 并且在侧向生长层上外延生长器件功能层。 空腔形成步骤包括以生长速率生长半导体膜的第一步骤和用于以与第一生长速率相互不同的另一生长速率生长另一半导体膜的第二步骤，其中第一和第二步骤执行多个 时代以交替的方式。

公开(公告)号：US08468988B2

公开(公告)日：2013-06-25

申请号：US13142664

申请日：2009-02-25

申请人： Takashi Nishikiori ,  Yasuyuki Shibata ,  Shinya Misaka

发明人： Takashi Nishikiori ,  Yasuyuki Shibata ,  Shinya Misaka

IPC分类号： F01L1/34

CPC分类号： F02D13/08 ,  B60K6/445 ,  F01L1/267 ,  F01L13/0036 ,  F01L2013/0052 ,  F01L2820/031 ,  F02D29/02 ,  F02D41/0002 ,  F02D41/20 ,  F02D2013/0292 ,  F02D2041/0265 ,  F02D2041/2024 ,  Y02T10/18 ,  Y02T10/6239 ,  Y10T74/2107

摘要： Provided is a variable valve operating apparatus for an internal combustion engine, which can favorably reduce electric power consumption in a vehicle system that may stop the internal combustion engine during power-up of the vehicle system.A changeover mechanism 90 is provided which is capable of switching between a connection state in which a first rocker arm 96 and a second rocker arm 98 are in connection with each other via a changeover pin 112, 118 and a disconnection state in which the connection is released. The changeover mechanism 90 performs energization of actuators 130 for each cylinder in a case in which fuel supply to the internal combustion engine 12 is stopped in response to an establishment of a predetermined stop condition. The above-described energization of the actuator 130 for each cylinder is stopped in a case in which a crankshaft 78 of the internal combustion engine 12 stops rotating during an energization time period of the actuator 130 and in which the crankshaft 78 is not driven by an external power.

摘要翻译： 提供一种用于内燃机的可变气门操作装置，其能够有利地降低在车辆系统通电期间可能停止内燃机的车辆系统的电力消耗。 提供了切换机构90，其能够经由切换销112,118在第一摇臂96和第二摇臂98彼此连接的连接状态之间切换，并且连接是断开状态 释放 在内燃机12的燃料供应停止响应于预定停止条件的建立的情况下，转换机构90对每个气缸执行致动器130的通电。 在内燃机12的曲轴78在致动器130的通电时间段内停止旋转的情况下，每个气缸的致动器130的上述通电被停止，并且曲轴78不被驱动 外部电源