Thin film developing device
    1.
    发明授权
    Thin film developing device 失效
    薄膜显影装置

    公开(公告)号:US4788570A

    公开(公告)日:1988-11-29

    申请号:US851503

    申请日:1986-04-14

    IPC分类号: G03G15/09 G03G15/08

    CPC分类号: G03G15/09

    摘要: A developing device includes a developing sleeve driven to rotate for transporting a film of charged developer as carried thereon past a developing station where the film of developer is applied to an electrostatic latent image to have it developed. Also provided is a sponge roller pressed against and driven to rotate in the same rotating direction as that of the developing sleeve, so that the developer is supplied to the developing sleeve at one side of the contact between the developing sleeve and the sponge roller and any residual developer on the developing sleeve is removed at the other side of the contact. Preferably, a desired voltage difference is established between the developing sleeve and the sponge roller. Furthermore, the sponge roller is preferably so structured to have a sufficient conductivity level at least at its outer peripheral surface thereby allowing the residual charge on the developing sleeve to be discharged sufficiently.

    摘要翻译: 显影装置包括被驱动旋转的显影套筒,用于将带电显影剂的薄膜运送通过显影工位,其中将显影剂膜施加到静电潜像以使其显影。 还提供了一个海绵辊,其被压靠并驱动以与显影套筒相同的旋转方向旋转,使得显影剂在显影套筒和海绵辊之间的接触的一侧被供应到显影套筒,并且任何 显影套筒上的残留显影剂在触点的另一侧被去除。 优选地,在显影套筒和海绵辊之间建立期望的电压差。 此外,海绵辊的结构优选至少在其外周表面具有足够的导电率,从而允许显影套筒上的剩余电荷充分放电。

    Electrostatic latent image developing apparatus
    2.
    发明授权
    Electrostatic latent image developing apparatus 失效
    静电潜像显影装置

    公开(公告)号:US4755847A

    公开(公告)日:1988-07-05

    申请号:US899325

    申请日:1986-08-22

    IPC分类号: G03G15/08

    摘要: An electrostatic latent image developing apparatus supplies toner to a latent image carrier such as a drum-shaped photosensitive body to visualize a latent image formed thereon. The toner is supplied by a rotating drum-shaped toner carrier having a portion confronting the photosensitive body adjacent thereto and another portion held in contact with toner contained in a toner container. The toner is electrostatically attracted to the toner carrier and transferred therefrom to the photosensitive body. The toner on the toner carrier is regulated into a thin toner layer by a toner layer regulating member that is resiliently held in sliding contact with the toner carrier. To prevent toner deposits from being attached to the toner layer regulating member, the toner layer regulating member is made of a material adapted to wear with the attached toner. In order to provide the toner layer regulating member with an ability to triboelectrically charge toner, whether chargeable to a polarity (-) or (+), or to control the amount of electricity on toner chargeable to a polarity (-) or (+) and prevent toner deposits from being attached to the toner layer regulating member, another material to control the amount of electricity on toner is mixed in the material which can be worn with the attached toner.

    摘要翻译: 静电潜像显影装置向诸如鼓形感光体的潜像载体提供调色剂,以使形成在其上的潜像可视化。 调色剂由旋转的鼓形调色剂载体提供,其具有与感光体相邻的部分,另一部分保持与容纳在调色剂容器中的调色剂接触。 调色剂被静电吸引到调色剂载体上并从其转印到感光体上。 调色剂载体上的调色剂通过与调色剂载体弹性地保持滑动接触的调色剂层限制构件调节成薄的调色剂层。 为了防止调色剂沉积物附着到调色剂层调节部件上,调色剂层限制部件由适于与附着的调色剂一起磨损的材料制成。 为了提供调色剂层调节件具有对带电极( - )或(+)进行充电的调色剂的摩擦电荷能力,或者控制可充电到极性( - )或(+)的调色剂上的电量, 并且防止调色剂沉积物附着到调色剂层限制构件上,用于控制调色剂上的电量的另一种材料在可与所附着的调色剂一起磨损的材料中混合。

    Image developing device
    3.
    发明授权
    Image developing device 失效
    图像显影装置

    公开(公告)号:US4873940A

    公开(公告)日:1989-10-17

    申请号:US922357

    申请日:1986-10-23

    IPC分类号: G03G15/08 G03G15/09

    摘要: An image developing device for use in an electrophotographic copying apparatus or a printer includes a developing roller for supplying toner to a latent image formed on a latent image carrier to develop the latent image into a visible toner image. The image developing device also includes a toner supply roller independently rotatable in abutting engagement with the developing roller for supplying the toner onto the developing roller. Each of the toner supply roller and the developing roller is electrically conductive. An electric potential with its polarity dependent on whether the toner is positively or negatively chargeable is applied between the toner supply toner and the developing roller by a bias voltage distributing circuit.

    摘要翻译: 用于电子照相复印装置或打印机的图像显影装置包括用于向形成在潜像载体上的潜像供应调色剂的显影辊,以将潜像显影成可见的调色剂图像。 图像显影装置还包括独立地可旋转地与显影辊邻接接合的调色剂供应辊,用于将调色剂供应到显影辊上。 调色剂供应辊和显影辊中的每一个都是导电的。 通过偏置电压分配电路,在调色剂供给调色剂和显影辊之间施加其极性的电位取决于调色剂是正还是可带电的。

    Organic electroluminescent display device
    4.
    发明授权
    Organic electroluminescent display device 失效
    有机电致发光显示装置

    公开(公告)号:US6104137A

    公开(公告)日:2000-08-15

    申请号:US119235

    申请日:1998-07-21

    摘要: An organic electroluminescent display device includes an organic electroluminescent element formed on a substrate thereof and having an organic compound layer group sandwiched between cathodes and anodes. The organic compound layer group has laminated electroluminescence functional layers formed of at least one kind of organic compound. Further, the organic electroluminescent display device includes an airtight case that encloses the organic electroluminescent element with a space formed between the airtight case itself and the organic electroluminescent element and isolates the organic electroluminescent element from outside air, and a filler gas filling the space within the airtight case. The filler gas contains at least one kind of combustion supporting gas.

    摘要翻译: 有机电致发光显示装置包括在其基板上形成的有机电致发光元件,并且具有夹在阴极和阳极之间的有机化合物层组。 有机化合物层组由至少一种有机化合物形成的层叠电致发光功能层。 此外,有机电致发光显示装置包括气密壳体,其封闭有机电致发光元件,在气密壳本身和有机电致发光元件之间形成有空间,并将有机电致发光元件与外部空气隔离,填充气体内的空间 气密箱 填充气体包含至少一种燃烧支持气体。

    Trench-type semiconductor memory device
    5.
    发明授权
    Trench-type semiconductor memory device 失效
    沟槽型半导体存储器件

    公开(公告)号:US5861649A

    公开(公告)日:1999-01-19

    申请号:US871530

    申请日:1992-04-21

    摘要: A dynamic RAM in which a groove (20) is formed on the main surface of a semiconductor substrate; a highly concentrated semiconductor layer (80) having one conductive type is formed inside the groove (20) to a depth sufficient to contain the first and second impurity diffusion areas (53) and (22), which are formed on the top of this groove and have the opposite conductive type; a capacitor C.sub.1 formed inside the groove (20), while a transfer gate Tr.sub.1 is formed on the highly concentrated semiconductor layer (80); and the diffusion area (53) is used to connect them.

    摘要翻译: 一种动态RAM,其中在半导体衬底的主表面上形成有沟槽(20); 在凹槽(20)的内部形成有一个具有一种导电类型的高度集中的半导体层(80),其深度足以容纳形成在该槽的顶部上的第一和第二杂质扩散区域(53)和(22) 并具有相反的导电类型; 形成在所述槽(20)内部的电容器C1,同时在所述高度集中的半导体层(80)上形成传输门Tr1。 并且扩散区域(53)用于连接它们。

    Transfer medium separating device
    7.
    发明授权
    Transfer medium separating device 失效
    转印介质分离装置

    公开(公告)号:US4408863A

    公开(公告)日:1983-10-11

    申请号:US284454

    申请日:1981-07-17

    IPC分类号: G03G15/00 G03G15/14 G03G15/22

    CPC分类号: G03G15/6535

    摘要: In a copy paper separating device for use in a transfer type electrophotographic copying machine which includes a conductive carrier member, preferably in the form a conductive endless belt extended between a pair of pulleys. The conductive carrier member is disposed in the periphery of the photosensitive member to which a copy paper is brought into contact for the transfer of a toner image formed on the photosensitive member. The potential of the conductive carrier member is maintained nearly at zero level during the first step of the separating operation; whereas, the potential of the carrier member is increased to a predetermined value of the polarity opposite to that of the toner image during the second step.

    摘要翻译: 在用于转印型电子照相复印机的复印纸分离装置中,该转印型电子照相复印机包括导电载体部件,优选为在一对滑轮之间延伸的导电环形带。 导电载体构件设置在感光构件的与复印纸接触的周边,用于转印形成在感光构件上的调色剂图像。 在分离操作的第一步骤期间,导电载体构件的电位几乎维持在零水平; 而在第二步骤中,载体构件的电位增加到与调色剂图像的极性相反的极性的预定值。

    Self-emission unit with integrally formed module and protecting frame
    8.
    发明授权
    Self-emission unit with integrally formed module and protecting frame 有权
    具有整体形成的模块和保护框架的自发射单元

    公开(公告)号:US07671533B2

    公开(公告)日:2010-03-02

    申请号:US11520016

    申请日:2006-09-13

    申请人: Yoshihiro Ogata

    发明人: Yoshihiro Ogata

    IPC分类号: H01L51/50 H01L51/52

    摘要: It is an object of the present invention to provide an improved method of manufacturing a self-emission unit including a self-emission module having self-emission elements formed on a substrate, and a frame for protecting the self-emission modules, without carrying out some troublesome steps, thus making it possible to manufacture the self-emission unit in a shortened time. Another object of the present invention is to provide an improved self-emission unit capable of being attached to an attachment base with a high precision. The self-emission unit has a self-emission module and a frame. The frame is provided to cover a part or the whole of the self-emission module so as to protect the same. Further, the frame has fastening sections for attaching the self-emission module to an attachment base. The frame is formed integrally with the self-emission module so that it is possible to avoid some troublesome steps and thus shorten manufacturing time. The foregoing structure also makes it possible to improve an attachment precision when attaching the self-emission unit to an attachment base.

    摘要翻译: 本发明的目的是提供一种制造自发射单元的改进方法,该自发射单元包括在基板上形成自发射元件的自发射模块,以及用于保护自发射模块的框架,而不进行 一些麻烦的步骤,从而可以在缩短的时间内制造自发射单元。 本发明的另一个目的是提供一种能够以高精度附着到安装底座上的改进的自发射单元。 自发射单元具有自发射模块和框架。 该框架被设置为覆盖自发射模块的一部分或全部以便保护该自发射模块。 此外,框架具有用于将自发射模块附接到附接基座的紧固部分。 框架与自发射模块一体地形成,从而可以避免一些麻烦的步骤,从而缩短制造时间。 上述结构还使得可以在将自发射单元附接到安装基座时提高安装精度。

    French-type semiconductor memory device with enhanced trench
capacitor-transistor connection
    9.
    发明授权
    French-type semiconductor memory device with enhanced trench capacitor-transistor connection 失效
    法国式半导体存储器件,具有增强的沟槽电容 - 晶体管连接

    公开(公告)号:US5563433A

    公开(公告)日:1996-10-08

    申请号:US883502

    申请日:1992-05-15

    CPC分类号: H01L27/10861 H01L28/40

    摘要: A type of semiconductor device with a configuration characterized by the fact that an electroconductive film (90) is formed beforehand in connection to step (54a) of insulating film (54), and an electroconductive layer (63) with step from the aforementioned electroconductive film is coated to form the side contact of the memory cell.Even in the case when breakage takes place in electroconductive layer (63), the electrical conduction is still maintained via substrate electroconductive film (90), and no wire breakage, in effect, takes place. In addition, it is possible to form the pattern for the aforementioned electroconductive layer by, for instance, etching back method without applying a special mask; hence, the manufacturing process is simplified.

    摘要翻译: 一种具有这样的结构的半导体器件,其特征在于,预先连接到绝缘膜(54)的步骤(54a)形成导电膜(90),并且导电层(63)与上述导电膜 被涂覆以形成存储单元的侧面接触。 即使在导电层(63)中发生断裂的情况下,仍然通过基板导电膜(90)保持导电性,实际上不发生断线。 此外,可以通过例如在不施加特殊掩模的情况下回蚀刻方法来形成上述导电层的图案; 因此,简化了制造过程。

    Two-step sinter method utilized in conjunction with memory cell
replacement by redundancies
    10.
    发明授权
    Two-step sinter method utilized in conjunction with memory cell replacement by redundancies 失效
    结合存储器单元更换冗余的两步烧结方法

    公开(公告)号:US5514628A

    公开(公告)日:1996-05-07

    申请号:US451644

    申请日:1995-05-26

    IPC分类号: H01L21/324 H01L27/118

    CPC分类号: H01L21/324 H01L27/118

    摘要: A process is disclosed herein for increasing yield in a semiconductor circuity having redundant circuitry for replacing defective normal circuitry in the semiconductor integrated circuit. In the first step, an insufficient sinter operation (50) is carried out in a hydrogen atmosphere at a temperature of less than 350.degree. C. At this temperature, no significant change will be seen in the interface trap density. Thereafter, the integrated circuit is tested (54,56) and the defective normal circuitry then is replaced (58) with the redundant circuitry. The integrated circuit is then subjected to a sufficient sinter operation (64) which is an operation wherein the substrate is disposed at a temperature between 350.degree. C.-500.degree. C. for more than 30 minutes. This sufficient sinter operation is performed in a hydrogen atmosphere, allowing dangling bonds at the interface to be terminated with hydrogen. Preferable, the optimal temperature for the sufficient sinter is approximately 400.degree. C. The integrated circuit is then subjected to a reliability and burn-in procedure.

    摘要翻译: 本文公开了一种用于提高具有用于替换半导体集成电路中的有缺陷的正常电路的冗余电路的半导体电路中的产量的方法。 在第一步骤中,在低于350℃的氢气气氛中进行不充分的烧结操作(50)。在该温度下,界面陷阱密度将不会发生明显的变化。 此后,测试集成电路(54,56),然后用冗余电路替换有缺陷的正常电路(58)。 然后对集成电路进行充分的烧结操作(64),其是将衬底置于350℃-5500℃的温度下超过30分钟的操作。 这种充分的烧结操作在氢气氛中进行,允许界面处的悬挂键用氢终止。 优选的是,足够的烧结体的最佳温度为约400℃。然后对集成电路进行可靠性和老化过程。