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    Charged-particle-beam exposure device and charged-particle-beam exposure method
    1.
    发明授权
    Charged-particle-beam exposure device and charged-particle-beam exposure method 失效
    带电粒子束曝光装置和带电粒子束曝光方法

    公开(公告)号：US5872366A

    公开(公告)日：1999-02-16

    申请号：US908699

    申请日：1997-08-08

    申请人： Yoshihisa Ooaeh ,  Tomohiko Abe ,  Akio Yamada ,  Hiroshi Yasuda ,  Kenj Kudoh ,  Kouzi Takahata

    发明人： Yoshihisa Ooaeh ,  Tomohiko Abe ,  Akio Yamada ,  Hiroshi Yasuda ,  Kenj Kudoh ,  Kouzi Takahata

    IPC分类号： H01J37/07 ,  H01J37/065 ,  H01J37/24 ,  H01J37/30 ,  H01J37/09

    CPC分类号： H01J37/241 ,  H01J37/065 ,  H01J2237/3175

    摘要： An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower than the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode and the anode, and being applied with a voltage lower than the first voltage to form a cross-over image of the electron beam, the fourth aperture being larger than the third aperture.

    摘要翻译： 用于发射沿着光束轴线行进的电子束的电子枪包括具有尖端的阴极，该尖端具有基本上圆形的圆锥形形状和基本上在光束轴线处的尖端表面，阴极被施加第一电压，阳极具有 基本上在所述光束轴上的第一孔，并施加高于所述第一电压的第二电压;控制电极，其具有基本上在所述光束轴上的第二孔，并施加低于所述第一电压的电压以控制所述第一电压的电流 阴极，第二孔径大于尖端表面，具有基本上在梁轴上的第三孔的引导电极设置在阴极和阳极之间，并施加有比第一电压高的电压并且低于第二电压 电压，所述第三孔小于所述尖端表面，以及透镜电极，所述透镜电极具有基本上在所述光束轴上的第四孔 引导电极和阳极，并施加低于第一电压的电压以形成电子束的交叉图像，第四孔径大于第三孔径。

    Method for manufacturing an electrostatic deflector
    4.
    发明授权
    Method for manufacturing an electrostatic deflector 失效
    静电导流板制造方法

    公开(公告)号：US6055719A

    公开(公告)日：2000-05-02

    申请号：US35105

    申请日：1998-03-05

    申请人： Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda

    发明人： Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda

    IPC分类号： G09F21/04 ,  H01J37/147 ,  H01J37/305 ,  H01L21/027

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1472 ,  H01J2237/1516 ,  H01J2237/3175 ,  Y10T29/49002

    摘要： The present invention relates to a charged particle beam exposure apparatus, deflecting a charged particle beam formed into a predetermined shape by being passed through a predetermined transmission mask, and irradiating a predetermined location on the surface of a sample with the charged particle beam. The apparatus comprises: a mirror barrel through which the charged particle beam is passed; and an electrostatic deflector, provided in the mirror barrel, for deflecting the charged particle beam. The electrostatic deflector has a plurality of pairs of electrodes, which are made of a conductive material having carbon as a primary element and are embedded in an internal face of an insulating cylinder. The present invention also relates to a method for forming the electrostatic deflector.

    摘要翻译： 带电粒子束曝光装置技术领域本发明涉及一种带电粒子束曝光装置，其通过穿过预定的透射掩模使形成为预定形状的带电粒子束偏转，并用带电粒子束照射样品表面上的预定位置。 该装置包括：经过带电粒子束的反射镜筒; 以及设置在镜筒中的用于偏转带电粒子束的静电偏转器。 静电偏转器具有多对电极，它们由具有碳作为主要元件的导电材料制成，并且嵌入绝缘筒的内表面。 本发明还涉及一种用于形成静电偏转器的方法。

    Charged-particle-beam exposure device and charged-particle-beam exposure method
    6.
    发明授权
    Charged-particle-beam exposure device and charged-particle-beam exposure method 有权
    带电粒子束曝光装置和带电粒子束曝光方法

    公开(公告)号：US5949078A

    公开(公告)日：1999-09-07

    申请号：US131368

    申请日：1998-08-07

    申请人： Yoshihisa Ooaeh ,  Tomohiko Abe ,  Akio Yamada ,  Hiroshi Yasuda ,  Kenj Kudoh ,  Kouzi Takahata

    发明人： Yoshihisa Ooaeh ,  Tomohiko Abe ,  Akio Yamada ,  Hiroshi Yasuda ,  Kenj Kudoh ,  Kouzi Takahata

    IPC分类号： H01J37/07 ,  H01J37/065 ,  H01J37/24 ,  H01J37/30

    CPC分类号： H01J37/241 ,  H01J37/065 ,  H01J2237/3175

    摘要： An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower that the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode and the anode, and being applied with a voltage lower than the first voltage to form a cross-over image of the electron beam, the fourth aperture being larger than the third aperture.

    摘要翻译： 用于发射沿着光束轴线行进的电子束的电子枪包括具有尖端的阴极，该尖端具有基本上圆形的圆锥形形状和基本上在光束轴线处的尖端表面，阴极被施加第一电压，阳极具有 基本上在所述光束轴上的第一孔，并且施加有高于所述第一电压的第二电压;控制电极，其具有基本上在所述光束轴上的第二孔，并施加低于所述第一电压以控制所述第一电压的电流 阴极，第二孔径大于尖端表面，具有基本上在梁轴上的第三孔的引导电极设置在阴极和阳极之间，并施加有比第一电压高的电压并且低于第二电压 电压，所述第三孔小于所述尖端表面，以及透镜电极，所述透镜电极具有基本上在所述光束轴上的第四孔 引导电极和阳极，并施加低于第一电压的电压以形成电子束的交叉图像，第四孔径大于第三孔径。

    Charged particle exposure apparatus, and a charged particle exposure method
    7.
    发明授权
    Charged particle exposure apparatus, and a charged particle exposure method 失效
    带电粒子曝光装置和带电粒子曝光方法

    公开(公告)号：US5770862A

    公开(公告)日：1998-06-23

    申请号：US758824

    申请日：1996-12-04

    申请人： Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda

    发明人： Yoshihisa Ooaeh ,  Tomohiko Abe ,  Hiroshi Yasuda

    IPC分类号： G09F21/04 ,  H01J37/147 ,  H01J37/305 ,  H01L21/027

    CPC分类号： H01J37/3174 ,  B82Y10/00 ,  B82Y40/00 ,  H01J37/1472 ,  H01J2237/1516 ,  H01J2237/3175 ,  Y10T29/49002

    摘要： The present invention relates to a charged particle beam exposure apparatus, deflecting a charged particle beam formed into a predetermined shape by being passed through a predetermined transmission mask, and irradiating a predetermined location on the surface of a sample with the charged particle beam. The apparatus comprises: a mirror barrel through which the charged particle beam is passed; and an electrostatic deflector, provided in the mirror barrel, for deflecting the charged particle beam. The electrostatic deflector has a plurality of pairs of electrodes, which are made of a conductive material having carbon as a primary element and are embedded in an internal face of an insulating cylinder. The present invention also relates to a method for forming the electrostatic deflector.

    摘要翻译： 带电粒子束曝光装置技术领域本发明涉及一种带电粒子束曝光装置，其通过穿过预定的透射掩模使形成为预定形状的带电粒子束偏转，并用带电粒子束照射样品表面上的预定位置。 该装置包括：经过带电粒子束的反射镜筒; 以及设置在镜筒中的用于偏转带电粒子束的静电偏转器。 静电偏转器具有多对电极，它们由具有碳作为主要元件的导电材料制成，并且嵌入绝缘筒的内表面。 本发明还涉及一种用于形成静电偏转器的方法。

    Charged-particle-beam exposure device and charged-particle-beam exposure method
    9.
    发明授权
    Charged-particle-beam exposure device and charged-particle-beam exposure method 失效

    公开(公告)号：US5854490A

    公开(公告)日：1998-12-29

    申请号：US680960

    申请日：1996-07-16

    申请人： Yoshihisa Ooaeh ,  Akio Yamada ,  Hiroshi Yasuda

    发明人： Yoshihisa Ooaeh ,  Akio Yamada ,  Hiroshi Yasuda

    IPC分类号： H01J37/07 ,  H01J37/065 ,  H01J37/24 ,  H01J37/30 ,  H01J37/63

    CPC分类号： H01J37/241 ,  H01J37/065 ,  H01J2237/3175

    摘要： An electron gun for emitting an electron beam traveling along a beam axis includes a cathode having a tip, the tip having substantially a circular conic shape and a tip surface substantially at the beam axis, the cathode being applied with a first voltage, an anode having a first aperture substantially on the beam axis and being applied with a second voltage higher than the first voltage, a control electrode having a second aperture substantially on the beam axis and being applied with a voltage lower than the first voltage to control a current of the cathode, the second aperture being larger than the tip surface, a guide electrode having a third aperture substantially on the beam axis, being arranged between the cathode and the anode, and being applied with a voltage higher than the first voltage and lower than the second voltage, the third aperture being smaller than the tip surface, and a lens electrode having a fourth aperture substantially on the beam axis, being arranged between the guide electrode and the anode, and being applied with a voltage lower than the first voltage to form a cross-over image of the electron beam, the fourth aperture being larger than the third aperture.

    Charged particle beam exposure method and apparatus therefor
    10.
    发明授权
    Charged particle beam exposure method and apparatus therefor 失效
    带电粒子束曝光方法及其装置

    公开(公告)号：US5981960A

    公开(公告)日：1999-11-09

    申请号：US724954

    申请日：1996-10-02

    申请人： Yoshihisa Ooaeh ,  Akio Yamada ,  Hiroshi Yasuda ,  Hitoshi Tanaka

    发明人： Yoshihisa Ooaeh ,  Akio Yamada ,  Hiroshi Yasuda ,  Hitoshi Tanaka

    IPC分类号： H01J37/06 ,  H01J37/30 ,  H01J37/305 ,  H01J37/317 ,  H01L21/027

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F7/70925 ,  H01J37/3002 ,  H01J37/3174 ,  H01J2237/022 ,  H01J2237/188 ,  H01J2237/31776

    摘要： A charged particle beam exposure method and apparatus, in which a charged particle beam is shaped based on pattern data and the shaped charged particle beam is irradiated to a desired location on a sample. The method and apparatus includes introducing ozone gas into a chamber through which the charged particle beam is passed, shaped and deflected, to be irradiated to the desired location while the charged particle beam is irradiated through the chamber. The ozone gas concentration in the chamber is maintained so that the concentration downstream along the beam is higher than the concentration upstream along the beam. A charge-up drift due to a contamination material from a resist on a wafer can be avoided by the ozone self cleaning. The ozone oxidation does not occur at the upstream chamber where there is a lower ozone concentration and lower contamination.

    摘要翻译： 带电粒子束曝光方法和装置，其中基于图案数据对带电粒子束进行成形，并将成形的带电粒子束照射到样品上的期望位置。 所述方法和装置包括将臭氧气体引入室中，带电粒子束通过该腔通过，成形和偏转，以照射到期望位置，同时通过室照射带电粒子束。 保持室中的臭氧气体浓度，使得沿着光束的下游的浓度高于沿着光束的上游的浓度。 通过臭氧自清洁可以避免由于晶片上的抗蚀剂引起的污染物质的充电漂移。 臭氧氧化不会发生在臭氧浓度较低和污染较低的上游室。