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公开(公告)号：US4668089A
公开(公告)日：1987-05-26
申请号：US684292
申请日：1984-12-20
CPC分类号： G03F9/7049
摘要： An exposure apparatus comprises a light source, a mask plate having an exposure pattern area section and an alignment/reflection area section, a projection lens, a movable stage for holding a workpiece having a workpiece alignment mark, an alignment control and a driver for the movable stage. Before the exposure pattern area section is illuminated by the light source to be projected through the projection lens onto the workpiece, the workpiece is properly aligned with the mask. Alignment between the mask plate and the workpiece is performed by the effective use of the alignment/reflection area section specifically arranged and having a specific structure. The alignment/reflection area section is on that surface of the mask plate which does not face the light source and includes a reflection portion for conducting light from another light source to the workpiece and conducting light scattered from the workpiece and passing through the projection lens to the alignment control and a mask alignment mark portion of providing, when illuminated, an image of the mask alignment mark portion to the alignment control so that it detects the positional relation between the mask alignment mark portion and the workpiece alignment mark and produces a control signal for achieving alignment between the mask plate and the workpiece.
摘要翻译： 曝光装置包括光源，具有曝光图案区域部分和对准/反射区域部分的掩模板，投影透镜，用于保持具有工件对准标记的工件的可动台，对准控制和用于 活动舞台。 在通过投影透镜投射到工件上的光源照射曝光图案区域部分之前，工件与掩模正确对准。 掩模板与工件之间的对准通过有效地使用具体排列并具有特定结构的对准/反射区域部分进行。 对准/反射区域在掩模板的不面向光源的表面上，并且包括用于将来自另一光源的光传导到工件的反射部分，并且传导从工件散射的光并通过投影透镜到 对准控制和掩模对准标记部分，当照明时，将掩模对准标记部分的图像提供给对准控制，使得其检测掩模对准标记部分和工件对准标记之间的位置关系，并产生控制信号 以实现掩模板和工件之间的对准。
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公开(公告)号：US4701050A
公开(公告)日：1987-10-20
申请号：US702329
申请日：1985-08-05
CPC分类号： G03F9/7049
摘要： A semiconductor focusing exposure apparatus in which an opposite face of a mask to a face to be illuminated by exposure light is illuminated with alignment light so that the light reflected from said opposite face may be used for alignment and which is equipped with a second moving arrangement which is separate from a moving arrangement for an x-y moving table supporting a wafer, for aligning the mask and the wafer in an orthogonal direction with respect to the optical axis of a focusing lens.Moreover, the center of the flux of alignment pattern light for illuminating the wafer is made incident upon a line of intersection on which a plane containing the optical axis of an alignment optical system and the optical axis of said focusing lens and the incident plane of said focusing lens intersect with each other.Still moreover, the optical path of the alignment light beam is aligned in parallel with a straight line joining an alignment mark formed on the diffraction pattern and the center of the entrance pupil of said focusing lens.
摘要翻译： 一种半导体聚焦曝光装置，其中掩模与被曝光的照明面相反的面被对准光照射，使得从所述相对面反射的光可以用于对准并且配备有第二移动装置 其与用于支撑晶片的xy移动台的移动装置分离，用于使掩模和晶片相对于聚焦透镜的光轴在正交方向上对准。 此外，用于照射晶片的对准图案光的光通量的中心入射到其中包含对准光学系统的光轴和所述聚焦透镜的光轴的平面与所述聚焦透镜的入射平面的交线上 聚焦镜片相互交叉。 此外，对准光束的光路与连接形成在衍射图案上的对准标记和聚焦透镜的入射光瞳的中心的直线平行排列。
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公开(公告)号：US4795261A
公开(公告)日：1989-01-03
申请号：US944524
申请日：1986-12-22
CPC分类号： G03F9/7076
摘要： A reduction projection type aligner in a reduction projection exposing device for exposing a circuit pattern on a mask through a reduction projection lens onto a wafer by the step and repeat of the wafer, which comprises: a light source for irradiating coherent irradiation light, a reflection mirror for reflecting the coherent irradiation light irradiated from the light source, a detection optical system for detecting an interference pattern by optically causing interference between an alignment pattern reflection light obtained by entering the coherent irradiation light irradiated from the light source through the reduction projection lens to the alignment pattern portion of the wafer, which is then reflected at the alignment pattern portion and then passed through the reduction projection lens and a reflection light reflected at the reflection mirror, and means for aligning a mask and a wafer relatively by detecting the position of the wafer by the video image signals in the interference pattern detected by the detection optical system.
摘要翻译： 一种还原投影型对准器，用于通过晶片的步骤和重复将通过还原投影透镜将还原投影透镜上的电路图案曝露在晶片上的还原投影曝光装置中，包括：用于照射相干照射光的光源，反射 用于反射从光源照射的相干照射光的反射镜;检测光学系统，用于通过光学地引起通过将从光源经过还原投影透镜照射的相干照射光进入的对准图案反射光之间的干涉，检测干涉图案， 晶片的对准图案部分然后在对准图案部分反射然后通过还原投影透镜和在反射镜处反射的反射光，以及用于通过检测掩模和晶片的位置相对地对准掩模和晶片的位置 晶片由视频信号在干涉中 检测光学系统检测到的图案。
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公开(公告)号：US5008702A
公开(公告)日：1991-04-16
申请号：US401619
申请日：1989-08-31
IPC分类号： G03F7/20 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70216 , G03F7/2002 , G03F7/70241 , G03F7/70783 , G03F7/70791
摘要： An enlargement projection type exposure method includes the steps of deforming the shape of a substrate so as to eliminate distortion in an enlarged image of the pattern, which is formed on a mask and projected onto the substrate through an enlargement projection system. The pattern is exposed with the use of an enlargement projection optical system. An apparatus for the method comprises an enlargement projection optical system for enlarging the pattern formed on the mask, and a substrate deforming device for deforming by adsorption the substrate in shape so as to eliminate the distortion in the enlarged image of the pattern through the enlargement projection optical system.
摘要翻译： 放大投影型曝光方法包括以下步骤：使基板的形状变形，以消除形成在掩模上并通过放大投影系统投影到基板上的图案的放大图像的变形。 使用放大投影光学系统曝光图案。 一种用于该方法的装置，包括用于扩大形成在掩模上的图案的放大投影光学系统和用于通过吸收基板而变形的基板变形装置，以便通过放大投影来消除图案的放大图像中的变形 光学系统。
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公开(公告)号：US4819033A
公开(公告)日：1989-04-04
申请号：US113514
申请日：1987-10-28
CPC分类号： G03F7/70558 , G03F7/2006 , G03F7/70041 , G03F7/70058
摘要： An illumination apparatus is disclosed which is suitable for use in a projection/exposure system for projecting an image of a circuit pattern of a reticle on a semiconductor wafer through a projection lens. The illumination apparatus includes an excimer laser for emitting a pulsed laser beam, an optical system for illuminating the reticle with a plurality of laser pulses emitted from the excimer laser so that laser pulses having passed through the reticle impinge on the semiconductor wafer in different directions through the projection lens, and a light intensity control device for controlling the light intensity of each of the laser pulses so that the laser pulses equally contribute to the reaction of a light sensitive material which is provided on the semiconductor wafer, with light.
摘要翻译： 公开了一种适用于投影/曝光系统的照明装置，用于通过投影透镜在半导体晶片上投射标线片的电路图案的图像。 照明装置包括用于发射脉冲激光束的准分子激光器，用于从准分子激光器发射的多个激光脉冲照射标线片的光学系统，使得已经穿过掩模版的激光脉冲以不同方向穿过半导体晶片 投影透镜和用于控制每个激光脉冲的光强度的光强度控制装置，使得激光脉冲同样有助于设置在半导体晶片上的光敏材料与光的反应。
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公开(公告)号：US4993837A
公开(公告)日：1991-02-19
申请号：US301962
申请日：1989-01-25
IPC分类号： G01B11/00 , G03F9/00 , H01L21/027 , H01L21/30 , H01L21/68
CPC分类号： G03F9/70
摘要： A method and a system for pattern detection are disclosed in which a laser beam high in directivity is emitted from a laser beam source, the laser beam emitted from the laser beam source is irradiated on an uneven pattern to be detected on an object, the light component of a frequency corresponding to the cut-off frequency of an objective lens is removed from the light reflected from the object when an image of the pattern on the object is formed through an objective lens, the optical image thus formed is received by a photoelectric converting device for producing a signal waveform representing the pattern free of a signal of the frequency corresponding to the cut-off frequency, and the pattern is detected from a signal produced from the photoelectric converting device.
摘要翻译： 公开了一种用于图案检测的方法和系统，其中从激光束源发射高方向性的激光束，从激光束源发射的激光束照射在待检测物体上的不均匀图案上，光 当通过物镜形成物体上的图案的图像时，从物体反射的光中除去与物镜的截止频率相对应的频率的分量，由此形成的光学图像由光电 用于产生表示没有与截止频率相对应的频率的信号的模式的信号波形的转换装置，并且根据从光电转换装置产生的信号检测图案。
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7.发明授权Pattern position detecting method and apparatus for detecting the position of an alignment direction of a wafer target pattern 失效用于检测晶片靶图案的取向方向的位置的图案位置检测方法和装置
公开(公告)号：US4777374A
公开(公告)日：1988-10-11
申请号：US868601
申请日：1986-05-30
CPC分类号： G03F9/70
摘要： A pattern position detecting method and an apparatus comprises spatial coherence variable means for illuminating a two-dimensional pattern formed on a wafer and its vicinity through a projection lens under the state that spatial coherence of pattern illumination light is elevated in one direction with respect to said two-dimensional pattern and lowered in the other direction perpendicular to said one direction. Two-dimensional reflection images from the pattern and its vicinity obtained through the lens are image-formed by an image-formation optical system. The intensity distribution of the two-dimensional reflection light is detected by light-intensity-distribution detection means so that a detection signal produced from this detection means indicates the position of the two-dimensional pattern.
摘要翻译： 图案位置检测方法和装置包括空间相干可变装置，用于在图案照明光的空间相干相对于所述图案照明光的一个方向升高的状态下通过投影透镜照射形成在晶片及其附近的二维图案 二维图案并且在垂直于所述一个方向的另一个方向上降低。 通过透镜获得的来自图案及其附近的二维反射图像由图像形成光学系统图像形成。 通过光强分布检测装置检测二维反射光的强度分布，使得从该检测装置产生的检测信号指示二维图案的位置。
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公开(公告)号：US4725737A
公开(公告)日：1988-02-16
申请号：US797131
申请日：1985-11-12
CPC分类号： G03F9/7076
摘要： An alignment method and apparatus for reduction projection type aligner in which the rough detection of reticle position in the reticle alignment process at the time of mounting a reticle and the fine detection of reticle position in the wafer alignment for the alignment between a wafer and the reticle are performed automatically by the same reticle alignment pattern and the same optical alignment detection system. A plurality of one- or two-dimensional Fresnel zone plates having different shapes of diffraction patterns formed outside of a reticle circuit pattern and arranged at a position outward of the entrance pupil of the reduction projection lens are used as a reticle alignment pattern to detect the absolute position of the reticle. The detection field of view of the optical alignment detection system is thus effectively widened to make pattern detection possible with high magnification for an improved detection accuracy. The same reticle alignment pattern and the same optical alignment detection system are used for rough detection of reticle position in reticle alignment and fine detection of reticle position in wafer alignment. In the optical alignment detection system, on the other hand, the image position of the diffraction pattern from the reticle alignment pattern and the image position of the wafer alignment pattern are located at the same distance from the reticle surface.
摘要翻译： 用于还原投影型对准器的对准方法和装置，其中在安装光罩时在光罩对准过程中对光罩位置进行粗略检测，并且在晶片对准中精确检测标线片位置以用于晶片和掩模版之间的对准 通过相同的掩模版对准图案和相同的光学对准检测系统自动执行。 使用在分划板电路图案之外形成并且布置在还原投影透镜的入射光瞳外侧的位置处具有不同形状的衍射图案的多个一维或二维菲涅尔区域板作为掩模版对准图案，以检测 掩模版的绝对位置。 因此光学对准检测系统的检测视场被有效地加宽，以便以高放大率进行图案检测以提高检测精度。 相同的掩模版对准图案和相同的光学对准检测系统用于粗略检测掩模版对准中的掩模版位置和精确检测晶片对准中的掩模版位置。 另一方面，在光学对准检测系统中，衍射图案的标线片取向图案的图像位置和晶片对准图案的图像位置位于与标线片表面相同的距离处。
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公开(公告)号：US4744666A
公开(公告)日：1988-05-17
申请号：US886044
申请日：1986-07-16
IPC分类号： G01N21/88 , G01N21/956 , G03F9/00 , H01L21/027 , H01L21/30 , H01L21/66 , H01L21/67 , H01L21/68 , G01B11/27
CPC分类号： G03F9/7065 , G03F9/7049
摘要： In an alignment detection optical system designed to observe an alignment pattern of a mask and an image of an alignment pattern of a wafer formed on the alignment pattern of the mask by a projection lens in a projection type aligner, there is provided a spatial filter designed to select only the reflected light having a desired reflection angle from the light reflected by the alignment pattern composed of steps formed on a surface of the wafer.
摘要翻译： 在设置成通过投影型对准器中的投影透镜观察掩模的对准图案和形成在掩模的取向图案上的晶片的对准图案的图像的对准检测光学系统中，设置有空间滤波器， 仅从由在晶片的表面上形成的台阶构成的对准图案反射的光仅选择具有期望的反射角的反射光。
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公开(公告)号：US06335146B1
公开(公告)日：2002-01-01
申请号：US09542071
申请日：2000-04-03
申请人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
发明人： Minori Noguchi , Yukio Kenbo , Yoshitada Oshida , Masataka Shiba , Yasuhiro Yoshitaka , Makoto Murayama
IPC分类号： G03F700
CPC分类号： G03F7/705 , G03F7/2002 , G03F7/701 , G03F7/70125 , G03F7/70308 , G03F7/70591 , Y10S430/146
摘要： A production method of a semiconductor device, includes the steps of emitting an excimer laser from a light source, forming the excimer laser in a particular shape, illuminating a pattern on a mask for a phase shifter method with the particular shaped excimer laser, and exposing a resist on a wafer with the excimer laser which passed through the mask. The resist on the wafer is developed and the wafer is etched to form a pattern.
摘要翻译： 半导体器件的制造方法包括以下步骤：从光源发射准分子激光，形成特定形状的准分子激光器，照射具有特定形状的准分子激光器的移相器方法的掩模上的图案，以及曝光 具有通过掩模的准分子激光器的晶片上的抗蚀剂。 显影晶片上的抗蚀剂，蚀刻晶片以形成图案。
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