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公开(公告)号：US20130148066A1
公开(公告)日：2013-06-13
申请号：US13811026
申请日：2011-07-15
IPC分类号： G02F1/1337
CPC分类号： G02F1/1337 , G02F1/133707 , G02F1/134363 , G02F2001/133742 , G02F2001/134318 , G02F2001/134381 , G02F2001/13706 , G02F2001/13712
摘要： A liquid crystal panel (2) comprises a liquid crystal layer (30) sandwiched between two substrates (10 and 20) and alignment films (15 and 22) in contact with a liquid crystal layer. The liquid crystal panel (2) is of a vertical alignment type which drives the liquid crystal layer (30) by a transverse electric field which is generated between an upper electrode (14) and an lower layer electrode (12). A polar anchoring strength of each of the alignment films (15 and 22) falls within a range from more than 5×10−6 J/m2 to not more than 1×10−4 J/m2.
摘要翻译： 液晶面板（2）包括夹在两个基板（10和20）之间的液晶层（30）和与液晶层接触的取向膜（15和22）。 液晶面板（2）具有通过在上部电极（14）和下层电极（12）之间产生的横向电场驱动液晶层（30）的垂直取向型。 每个取向膜（15和22）的极性锚固强度落在从大于5×10 -6 J / m 2至不大于1×10 -4 J / m 2的范围内。
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公开(公告)号：US20140002762A1
公开(公告)日：2014-01-02
申请号：US14005640
申请日：2012-03-09
IPC分类号： G02F1/1343
CPC分类号： G02F1/134363 , G02F1/134309 , G02F2001/134381 , G09G3/3648 , G09G3/3655 , G09G2300/0434 , G09G2300/0495 , G09G2300/0823 , G09G2300/0866 , G09G2310/0262
摘要： A liquid crystal driving method and a liquid crystal display apparatus that achieve a sufficiently fast response, and a sufficiently high transmittance, and reduces transmittance greatly during black image displaying. The liquid crystal driving method includes performing a driving operation to cause a potential difference between a first pair of electrodes during a subframe period, a driving operation to cause a potential difference between a second pair of electrodes, and a driving operation to cause no difference between all the electrodes of the first pairs of electrodes and the second pair of electrodes.
摘要翻译： 一种液晶驱动方法和液晶显示装置，其在黑色图像显示期间实现足够快的响应，并且具有足够高的透射率，并且大大降低了透射率。 液晶驱动方法包括执行驱动操作以在子帧周期期间引起第一对电极之间的电位差，导致第二对电极之间的电位差的驱动操作和驱动操作之间不产生差异 第一对电极的所有电极和第二对电极。
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公开(公告)号：US20060101325A1
公开(公告)日：2006-05-11
申请号：US11086809
申请日：2005-03-22
申请人： Nobuo Sasaki , Susumu Okazaki , Yasuhiro Nasu , Yoji Nagase
发明人： Nobuo Sasaki , Susumu Okazaki , Yasuhiro Nasu , Yoji Nagase
IPC分类号： G06F17/00
CPC分类号： G02F1/13624 , G02F2001/134345 , G09G3/3607 , G09G3/3648 , G09G2320/02
摘要： The invention relates to an active matrix type liquid crystal display device and its driving method and provides a liquid crystal display device capable of omitting frame memory in image averaging processing among pixels for improving the smoothness of display and its driving method. For example, by providing an accumulated-charge-averaging TFT circuit which executes averaging of accumulated charges of a sub-pixel among a plurality of sub-pixels constructed within a pixel and adjacent sub-pixels within pixels adjacent thereto, thereby realizing smoothing processing of the display image without using a frame memory.
摘要翻译： 本发明涉及一种有源矩阵型液晶显示装置及其驱动方法，并且提供一种能够省略图像平均处理中的帧存储器的液晶显示装置，以提高显示的平滑度及其驱动方法。 例如，通过提供在像素内构成的多个子像素和与其相邻的像素内的相邻子像素执行平均化子像素的累积电荷的累积电荷平均TFT电路，从而实现平滑处理 显示图像而不使用帧存储器。
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4.发明授权Method of manufacturing thin film transistors in a liquid crystal display apparatus 失效在液晶显示装置中制造薄膜晶体管的方法
公开(公告)号：US5407845A
公开(公告)日：1995-04-18
申请号：US135030
申请日：1993-10-13
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/22 , H01L21/223 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/265
CPC分类号： H01L29/78696 , H01L21/2236 , H01L27/1214 , H01L29/66757 , G02F1/1368 , Y10S148/15
摘要： A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.
摘要翻译： 当形成栅电极和栅极总线时，使用第一片光掩模，当在栅电极上成为晶体管的有源层的半导体膜上进行构图时，使用第二片光掩模，第三片 当形成像素电极，源电极，漏电极，漏极总线和漏极总线端子部分时使用光掩模，并且当漏极总线端子部分上的膜，栅极 总线端子部分和像素部分被去除，从而形成以矩阵形式布置的薄膜晶体管。
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公开(公告)号：US06914643B1
公开(公告)日：2005-07-05
申请号：US09607104
申请日：2000-06-29
申请人： Yoji Nagase , Yoshinori Tanaka , Tetsuya Fujikawa , Yasuhiro Nasu
发明人： Yoji Nagase , Yoshinori Tanaka , Tetsuya Fujikawa , Yasuhiro Nasu
IPC分类号： G02F1/136 , G02F1/1362 , G02F1/1343
CPC分类号： G02F1/136204
摘要： The present invention relates to a liquid crystal display provided with an electrostatic protection element and an object of the present invention is to provide the liquid crystal display provided with superior redundancy and at the same time a sufficient protection function against static electricity in which relatively low voltage generates for a long period of time. Electrostatic protection element sections 28 and 30 are provided with a first TFT 32 having a source electrode (S) and a drain electrode (D) where the source electrode (S) is connected to external output electrodes 16 and 18 and the drain electrode (D) is connected to common wirings 22 and 24, a second TFT 38 having a conductor 42, a source electrode (S), a drain electrode (D) and a gate electrode (G) where the conductor 42 is connected to the gate electrode (G) of the first TFT 32, the source electrode (S) is connected to the external output electrodes 16 and 18, the drain electrode (D) is connected to the conductor 42 and the gate electrode (G) is electrically floated, and a third TFT 40 having a source electrode (S), a drain electrode (D) and a gate electrode (G) where the source electrode (S) is connected to the common wirings 22 and 24, the drain electrode (D) is connected to the conductor 42 and the gate electrode is electrically floated.
摘要翻译： 本发明涉及一种具有静电保护元件的液晶显示器，其目的在于提供具有优异冗余性的液晶显示器，同时具有足够的防静电保护功能，其中相对较低的电压 生成很长一段时间。 静电保护元件部分28和30设置有第一TFT 32，其具有源电极（S）和漏电极（D），其中源电极（S）连接到外部输出电极16和18以及漏电极（D ）连接到公共布线22和24，具有导体42，源电极（S），漏电极（D）和栅电极（G）的第二TFT 38，其中导体42连接到栅电极 G），源电极（S）连接到外部输出电极16和18，漏电极（D）连接到导体42，栅电极（G）电浮动，并且 具有源电极（S），漏电极（D）和栅电极（G）的第三TFT40，其中源电极（S）连接到公共布线22和24，漏电极（D）连接到 导体42和栅极电浮动。
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公开(公告)号：US5483082A
公开(公告)日：1996-01-09
申请号：US174030
申请日：1993-12-28
申请人： Hideaki Takizawa , Yasuhiro Nasu , Kazuhiro Watanabe , Shiro Hirota , Kazuo Nonaka , Seii Sato , Teiji Majima
发明人： Hideaki Takizawa , Yasuhiro Nasu , Kazuhiro Watanabe , Shiro Hirota , Kazuo Nonaka , Seii Sato , Teiji Majima
IPC分类号： G02F1/136 , G02F1/13 , G02F1/1333 , G02F1/1345 , G02F1/1362 , G02F1/1368 , H01L21/336 , H01L27/12 , H01L29/78 , H01L29/786
CPC分类号： G02F1/13458 , G02F1/136213 , H01L27/12 , G02F1/1345 , G02F1/13452 , G02F2001/133357
摘要： A thin film transistor matrix device comprises a transparent insulating substrate, a thin film transistor unit, a picture element unit, a storage capacitance unit, a gate terminal unit, and a drain terminal unit, the storage capacitance unit including a storage capacitance electrode formed on the transparent insulating substrate and formed of a metal layer of the same material as the gate electrode; a dielectric film formed on the storage capacitance electrode and formed of an insulating film common with the gate insulating film and a non-doped semiconductor layer of the same material as the semiconductor active layer; and a counter electrode formed on the dielectric film and formed of a doped semiconductor layer of the same material as the semiconductor contact layer and a metal layer of the same material as the source electrode and the drain electrode, the counter electrode being connected to the picture element electrode through a contact hole opened in a protecting film common with the passivation film. Thus, the fabrication process of the TFT matrix device can be simplified, and lower costs can be realized. Characteristic changes of the storage capacitance can be prevented, and yields and reliability can be improved.
摘要翻译： 一种薄膜晶体管矩阵器件，包括透明绝缘衬底，薄膜晶体管单元，像素单元，存储电容单元，栅极端子单元和漏极端子单元，所述存储电容单元包括形成在 透明绝缘基板，由与栅电极相同材料的金属层形成; 形成在所述辅助电容电极上并由与所述栅极绝缘膜共用的绝缘膜和与所述半导体有源层相同材料的非掺杂半导体层形成的电介质膜; 以及形成在电介质膜上并由与半导体接触层相同材料的掺杂半导体层和与源电极和漏电极相同材料的金属层形成的对电极，对电极连接到图像 元件电极通过在与钝化膜共同的保护膜中打开的接触孔。 因此，可以简化TFT矩阵器件的制造工艺，并且可以实现更低的成本。 可以防止存储电容的特性变化，并且可以提高产量和可靠性。
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7.发明授权Method of manufacturing thin film transistors in a liquid crystal display apparatus 失效在液晶显示装置中制造薄膜晶体管的方法
公开(公告)号：US5496749A
公开(公告)日：1996-03-05
申请号：US456836
申请日：1995-06-01
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/22 , H01L21/223 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/786
CPC分类号： H01L29/78696 , H01L21/2236 , H01L27/1214 , H01L29/66757 , G02F1/1368 , Y10S148/15
摘要： A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal .portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.
摘要翻译： 当形成栅电极和栅极总线时，使用第一片光掩模，当在栅电极上成为晶体管的有源层的半导体膜上进行构图时，使用第二片光掩模，第三片 当形成像素电极，源电极，漏电极，漏极总线和漏极总线端子部分时使用光掩模，并且当漏极总线端子部分上的膜，栅极 总线端子部分和像素部分被去除，从而形成以矩阵形式布置的薄膜晶体管。
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公开(公告)号：US5045487A
公开(公告)日：1991-09-03
申请号：US408944
申请日：1989-09-18
IPC分类号： H01L21/027 , H01L21/336 , H01L27/12 , H01L29/40 , H01L29/78 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/0274 , H01L29/78 , H01L29/78669 , Y10S438/949
摘要： A thin film transistor including a glass substrate and a gate electrode which is formed on the glass substrate. Source and drain electrodes are also provided. An insulating film covers at least the gate electrode and an amorphous semiconductor layer is formed on the insulating film. The semicondcutor layer includes a first portion having the source electrode formed thereon, a second portion having the drain electrode formed thereon, and a third portion formed between the first and second portions and located above the gate electrode, having a thin thickness which allows photolithographic light to permeate therethrough.
摘要翻译： 一种薄膜晶体管，其包括形成在玻璃基板上的玻璃基板和栅电极。 还提供了源极和漏极。 绝缘膜至少覆盖栅电极，在绝缘膜上形成非晶半导体层。 半切割层包括其上形成有源电极的第一部分，其上形成有漏电极的第二部分和形成在第一部分和第二部分之间并位于栅电极上方的第三部分，其具有薄的厚度，其允许光刻光 渗透通过。
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9.发明授权Liquid crystal display comprising an electrostatic protection element formed between adjacent bus lines 失效液晶显示器包括形成在相邻总线之间的静电保护元件公开(公告)号：US07342617B2
公开(公告)日：2008-03-11
申请号：US10602848
申请日：2003-06-24
IPC分类号： G02F1/1333 , G02F1/1343
CPC分类号： G02F1/136204
摘要： The present invention relates to a liquid crystal display provided with an electrostatic protection element and an object of the present invention is to provide the liquid crystal display provided with superior redundancy and at the same time a sufficient protection function against static electricity in which relatively low voltage generates for a long period of time. Electrostatic protection element sections 28 and 30 are provided with a first TFT 32 having a source electrode (S) and a drain electrode (D) where the source electrode (S) is connected to external output electrodes 16 and 18 and the drain electrode (D) is connected to common wirings 22 and 24, a second TFT 38 having a conductor 42, a source electrode (S), a drain electrode (D) and a gate electrode (G) where the conductor 42 is connected to the gate electrode (G) of the first TFT 32, the source electrode (S) is connected to the external output electrodes 16 and 18, the drain electrode (D) is connected to the conductor 42 and the gate electrode (G) is electrically floated, and a third TFT 40 having a source electrode (S), a drain electrode (D) and a gate electrode (G) where the source electrode (S) is connected to the common wirings 22 and 24, the drain electrode (D) is connected to the conductor 42 and the gate electrode is electrically floated.
摘要翻译： 本发明涉及一种具有静电保护元件的液晶显示器，其目的在于提供具有优异冗余性的液晶显示器，同时具有足够的防静电保护功能，其中相对低电压 生成很长一段时间。 静电保护元件部分28和30设置有第一TFT 32，其具有源电极（S）和漏电极（D），其中源电极（S）连接到外部输出电极16和18以及漏电极（D ）连接到公共布线22和24，具有导体42，源电极（S），漏电极（D）和栅电极（G）的第二TFT 38，其中导体42连接到栅电极 G），源电极（S）连接到外部输出电极16和18，漏电极（D）连接到导体42，栅电极（G）电浮动，并且 具有源电极（S），漏电极（D）和栅电极（G）的第三TFT40，其中源电极（S）连接到公共布线22和24，漏电极（D）连接到 导体42和栅极电浮动。
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公开(公告)号：US5462885A
公开(公告)日：1995-10-31
申请号：US366914
申请日：1994-12-30
IPC分类号： G02F1/1343 , G02F1/136 , G02F1/1368 , H01L21/22 , H01L21/223 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786 , H01L21/786
CPC分类号： H01L29/78696 , H01L21/2236 , H01L27/1214 , H01L29/66757 , G02F1/1368 , Y10S148/15
摘要： A first sheet of photomask is used when a gate electrode and a gate bus line are formed, a second sheet of photomask is used when patterning is applied to a semiconductor film which becomes an active layer of a transistor on the gate electrode, a third sheet of photomask is used when a pixel electrode, a source electrode, a drain electrode, a drain bus line and a drain bus terminal portion are formed, and a fourth sheet of photomask is used when a film on the drain bus terminal portion, the gate bus terminal portion and pixel portion is removed, thereby to form thin film transistors arranged in a matrix form.
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