VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD
    1.
    发明申请
    VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD 审中-公开
    真空加工设备和真空加工方法

    公开(公告)号:US20120156887A1

    公开(公告)日:2012-06-21

    申请号:US13392010

    申请日:2010-08-24

    IPC分类号: H01L21/306 H01L21/3065

    摘要: A vacuum processing apparatus, comprising: a processing chamber 3 in which an object to be processed is placed and a predetermined vacuum state is formed; a first processing gas introducing means 12 for converting a first processing gas into a radical state and introducing the resulting first processing gas in the radical state into the processing chamber through first processing gas introducing ports which open to the interior of the processing chamber; a second processing gas introducing means 15 for introducing a second processing gas, which is reactive with the first processing gas in the radical state, into the processing chamber through second processing gas introducing ports which open to the interior of the processing chamber; a temperature controlling means for controlling the temperature within the processing chamber 3 to a first temperature-controlled state, in which the first processing gas in the radical state and the second processing gas process the surface of the object to be processed, thereby producing a reaction product, and to a second temperature-controlled state in which the resulting reaction product is sublimated and removed; and an inert gas introducing means for introducing an inert gas into the processing chamber 3 through the processing gas introducing ports 12 when the temperature controlling means controls the temperature within the processing chamber to the second temperature-controlled state.

    摘要翻译: 一种真空处理装置,包括:处理室3,其中放置有待加工物体并形成预定的真空状态; 第一处理气体引入装置12,用于将第一处理气体转化为自由基状态,并将所得到的自由基状态的第一处理气体通过向处理室的内部开放的第一处理气体导入口引入处理室; 第二处理气体引入装置15,用于将通过自由基状态的第一处理气体反应的第二处理气体通过向处理室内部开放的第二处理气体导入口引入处理室; 温度控制装置,用于将处理室3内的温度控制到第一温度控制状态,其中自由基状态的第一处理气体和第二处理气体处理待处理物体的表面,从而产生反应 产物和第二温度控制状态,其中所得反应产物升华和除去; 以及惰性气体引入装置,当温度控制装置将处理室内的温度控制到第二温度控制状态时,通过处理气体导入口12将惰性气体引入处理室3。

    Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus
    3.
    发明授权
    Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus 失效
    气体处理设备,气体处理方法和气体处理设备的集成阀门单元

    公开(公告)号:US06817381B2

    公开(公告)日:2004-11-16

    申请号:US10437396

    申请日:2003-05-14

    IPC分类号: F16K1110

    摘要: A process gas line (255) for carrying WF6 gas for nucleation, a process gas line (257) for carrying WF6 gas for film deposition after nucleation are joined at a single joint (280) to a carrier gas line (256). A gas line (271) is connected to the joint (280) to carry a mixed gas of the carrier gas and WF6 gas to a processing chamber defined by a processing vessel. Sections of the carrier gas line (256) and the gas line (271) extending on the opposite sides of the joint (280) extend along a straight line, and the process gas lines (255, 257) are perpendicular to the gas line (271).

    摘要翻译: 用于携带用于成核的WF6气体的工艺气体管线(255),用于承载成核后的用于膜沉积的WF6气体的工艺气体管线(257)在单个接头(280)连接到载气管线(256)。 气体管线(271)连接到接头(280),以将载气和WF 6气体的混合气体输送到由处理容器限定的处理室。 在接头(280)的相对侧延伸的载气管线(256)和气体管线(271)的截面沿直线延伸,并且工艺气体管线(255,257)垂直于气体管线 271)。

    Plasma etching system and plasma etching method
    4.
    发明授权
    Plasma etching system and plasma etching method 失效
    等离子体蚀刻系统和等离子体蚀刻方法

    公开(公告)号:US5593540A

    公开(公告)日:1997-01-14

    申请号:US429648

    申请日:1995-04-27

    IPC分类号: H01J37/32 B44C1/22

    摘要: The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

    摘要翻译: 本发明提供了一种等离子体蚀刻系统,其包括封装等离子体的处理室,用于抽出处理室的装置,用于支撑基板的卡盘电极,与所述卡盘电极相对设置并设有大量小孔的喷淋电极 用于在所述卡盘电极和所述淋浴电极之间施加等离子体电压的电源,与所述淋浴电极的所述小孔连通的气体供给装置,用于通过所述小孔将等离子体形成气体供给到所述处理室,以及用于控制 所述气体供给装置使得所述等离子体形成气体以至少620kg / m 2 / hr的质量流量流过所述小孔。

    Method of Judging Grade of Malignancy of Carcinoma Cell
    5.
    发明申请
    Method of Judging Grade of Malignancy of Carcinoma Cell 失效
    判断癌细胞恶性程度的方法

    公开(公告)号:US20090004647A1

    公开(公告)日:2009-01-01

    申请号:US11658784

    申请日:2005-07-29

    IPC分类号: C12Q1/68 C12Q1/02 C07K16/18

    摘要: Means for easily determining the grade of malignancy of cancer cells. The amount of ATBF1 in the whole cell structure of test cancer cells separated from a living organism is detected, and on the basis of detection results, the grade of malignancy of test cancer cells is judged. Alternatively, the amount of ATBF1 in the nuclei of test cancer cells separated from a living organism is detected, and on the basis of detection results, the grade of malignancy of test cancer cells is judged. Still alternatively, the amount of ATBF1 in the cytoplasms of test cancer cells separated from a living organism is detected, and on the basis of detection results, the grade of malignancy of test cancer cells is judged. In a preferred from, at least one of (1) the amount of intranuclear presence and/or intracytoplasmic presence a region corresponding to exon 10 of an ATBF1 gene, (2) the amount of intranuclear presence and/or intracytoplasmic presence a region corresponding to exon 11 of an ATBF1 gene, and (3) the amount of intranuclear presence and/or intracytoplasmic presence a region corresponding to exon 3 of an ATBF1 gene is detected as the amount of ATBF1.

    摘要翻译: 用于容易确定癌细胞恶性程度的方法。 检测从生物体分离出的检测癌细胞的全细胞结构中的ATBF1的量,根据检测结果判断检测癌细胞的恶性程度。 或者,检测从活体分离的检测癌细胞的细胞核中的ATBF1的量,根据检测结果判断检测癌细胞的恶性程度。 或者,检测从活体分离的检测癌细胞的细胞质中的ATBF1的量,根据检测结果判断检测癌细胞的恶性程度。 优选地,(1)与ATBF1基因的外显子10相对应的区域的核内存在量和/或胞质内存在的量中的至少一种,(2)核内存在量和/或胞质内存在的量对应于 ATBF1基因的外显子11,(3)ATBF1基因的外显子3相应的区域的核内存在和/或胞质内存在量被检测为ATBF1的量。

    Pigment dispersants and their use
    6.
    发明申请
    Pigment dispersants and their use 有权
    颜料分散剂及其用途

    公开(公告)号:US20060185558A1

    公开(公告)日:2006-08-24

    申请号:US11354112

    申请日:2006-02-15

    摘要: A pigment dispersant contains the following component (a) alone or the following components (a) and (b) in combination: Component (a): a composite pigment formed of a diketopyrrolopyrrole pigment having a sulfonic group and another diketopyrrolopyrrole pigment having no sulfonic group, wherein the number of sulfonic group per molecule of the diketopyrrolopyrrole pigments in the composite pigment is from 0.05 to 0.5; and Component (b): a pigment other than the component (a), wherein the pigment has a sulfonic group or its metal salt, ammonium salt or amine salt. Also disclosed are a colored composition for color filters, a process for the fabrication of a color filter, the color filter fabricated by the process, an image display device including the color filter, and an information communication equipment including the image display device. These colored composition, process, color filter, image display device and information communication equipment all make either direct or indirect use of the pigment dispersant.

    摘要翻译: 颜料分散剂包含以下组分(a)单独或以下组分(a)和(b)组合:组分(a):由具有磺酸基的二酮吡咯并吡咯颜料和不具有磺酸基的另一个二酮吡咯并吡咯颜料形成的复合颜料 其中复合颜料中每分子二酮吡咯并吡咯颜料的磺酸基数为0.05〜0.5; 和组分(b):除了组分(a)之外的颜料,其中所述颜料具有磺酸基或其金属盐,铵盐或胺盐。 还公开了用于滤色器的彩色组合物,用于制造滤色器的方法,通过该方法制造的滤色器,包括滤色器的图像显示装置和包括图像显示装置的信息通信设备。 这些彩色组合物,工艺,滤色器,图像显示装置和信息通信设备都直接或间接使用颜料分散剂。

    Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus
    7.
    发明申请
    Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus 审中-公开
    气体处理设备,气体处理方法和气体处理设备的集成阀门单元

    公开(公告)号:US20050061377A1

    公开(公告)日:2005-03-24

    申请号:US10979094

    申请日:2004-11-02

    摘要: A process gas line (255) for carrying WF6 gas for nucleation, a process gas line (257) for carrying WF6 gas for film deposition after nucleation are joined at a single joint (280) to a carrier gas line (256). A gas line (271) is connected to the joint (280) to carry a mixed gas of the carrier gas and WF6 gas to a processing chamber defined by a processing vessel. Sections of the carrier gas line (256) and the gas line (271) extending on the opposite sides of the joint (280) extend along a straight line, and the process gas lines (255, 257) are perpendicular to the gas line (271).

    摘要翻译: 用于携带用于成核的WF6气体的工艺气体管线(255),用于承载成核后的用于膜沉积的WF6气体的工艺气体管线(257)在单个接头(280)连接到载气管线(256)。 气体管线(271)连接到接头(280),以将载气和WF 6气体的混合气体输送到由处理容器限定的处理室。 在接头(280)的相对侧延伸的载气管线(256)和气体管线(271)的截面沿直线延伸,并且工艺气体管线(255,257)垂直于气体管线 271)。

    Plasma etching system
    8.
    发明授权
    Plasma etching system 失效
    等离子体蚀刻系统

    公开(公告)号:US5423936A

    公开(公告)日:1995-06-13

    申请号:US138039

    申请日:1993-10-19

    IPC分类号: H01J37/32 H01L21/00

    摘要: The present invention provides a plasma etching system, comprising a process chamber enclosing a plasma, means for evacuating said process chamber, a chuck electrode for supporting a substrate, a shower electrode positioned to face said chuck electrode and provided with a large number of small holes, a power source for applying a plasma voltage between the chuck electrode and said shower electrode, gas supply means communicating with said small holes of the shower electrode for supplying a plasma-forming gas into the process chamber through the small holes, and means for controlling said gas supply means such that said plasma-forming gas flows through said small holes at a mass flow rate of at least 620 kg/m.sup.2 /hr.

    摘要翻译: 本发明提供了一种等离子体蚀刻系统,其包括封装等离子体的处理室,用于抽出处理室的装置,用于支撑基板的卡盘电极,与所述卡盘电极相对设置并设有大量小孔的喷淋电极 用于在所述卡盘电极和所述淋浴电极之间施加等离子体电压的电源,与所述淋浴电极的所述小孔连通的气体供给装置,用于通过所述小孔将等离子体形成气体供给到所述处理室,以及用于控制 所述气体供给装置使得所述等离子体形成气体以至少620kg / m 2 / hr的质量流量流过所述小孔。

    Method of judging grade of malignancy of carcinoma cell using ATBF-1
    9.
    发明授权
    Method of judging grade of malignancy of carcinoma cell using ATBF-1 失效
    使用ATBF-1判断癌细胞恶性程度的方法

    公开(公告)号:US07871788B2

    公开(公告)日:2011-01-18

    申请号:US11658784

    申请日:2005-07-29

    IPC分类号: G01N33/574 G01N33/53

    摘要: Means for easily determining the grade of malignancy of cancer cells. The amount of ATBF1 in the whole cell structure of test cancer cells separated from a living organism is detected, and on the basis of detection results, the grade of malignancy of test cancer cells is judged. Alternatively, the amount of ATBF1 in the nuclei of test cancer cells separated from a living organism is detected, and on the basis of detection results, the grade of malignancy of test cancer cells is judged. Still alternatively, the amount of ATBF1 in the cytoplasms of test cancer cells separated from a living organism is detected, and on the basis of detection results, the grade of malignancy of test cancer cells is judged. In a preferred from, at least one of (1) the amount of intranuclear presence and/or intracytoplasmic presence a region corresponding to exon 10 of an ATBF1 gene, (2) the amount of intranuclear presence and/or intracytoplasmic presence a region corresponding to exon 11 of an ATBF1 gene, and (3) the amount of intranuclear presence and/or intracytoplasmic presence a region corresponding to exon 3 of an ATBF1 gene is detected as the amount of ATBF1.

    摘要翻译: 用于容易确定癌细胞恶性程度的方法。 检测从生物体分离出的检测癌细胞的全细胞结构中的ATBF1的量,根据检测结果判断检测癌细胞的恶性程度。 或者,检测从活体分离的检测癌细胞的细胞核中的ATBF1的量,根据检测结果判断检测癌细胞的恶性程度。 或者,检测从活体分离的检测癌细胞的细胞质中的ATBF1的量,根据检测结果判断检测癌细胞的恶性程度。 优选地,(1)与ATBF1基因的外显子10相对应的区域的核内存在量和/或胞质内存在的量中的至少一种,(2)核内存在量和/或胞质内存在的量对应于 ATBF1基因的外显子11,(3)ATBF1基因的外显子3相应的区域的核内存在和/或胞质内存在量被检测为ATBF1的量。

    Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus
    10.
    发明授权
    Gas processing apparatus, gas processing method and integrated valve unit for gas processing apparatus 失效
    气体处理设备,气体处理方法和气体处理设备的集成阀门单元

    公开(公告)号:US07828016B2

    公开(公告)日:2010-11-09

    申请号:US12081687

    申请日:2008-04-18

    IPC分类号: F16K11/10

    摘要: A process gas line (255) for carrying WF6 gas for nucleation, a process gas line (259) for carrying WF6 gas for film deposition after nucleation are joined at a single joint (280) to a carrier gas line (256). A gas line (270) is connected to the joint (280) to carry a mixed gas of the carrier gas and WF6 gas to a processing chamber defined by a processing vessel. Sections of the carrier gas line (256) and the gas line (270) extending on the opposite sides of the joint (280) extend along a straight line, and the process gas lines (255, 259) are perpendicular to the gas line (270).

    摘要翻译: 用于携带用于成核的WF6气体的工艺气体管线(255),用于承载成核后用于膜沉积的WF6气体的工艺气体管线(259)在单个接头(280)处接合到载气管线(256)。 气体管线(270)连接到接头(280),以将载气和WF 6气体的混合气体输送到由处理容器限定的处理室。 在接头(280)的相对侧延伸的载气管线(256)和气体管线(270)的部分沿着直线延伸,并且工艺气体管线(255,259)垂直于气体管线 270)。