摘要:
The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.
摘要:
A phase change memory device includes a lower electrode provided on a substrate, an interlayer insulating layer including a contact hole exposing the lower electrode, and covering the substrate, a resistant material pattern filling the contact hole, a phase change pattern interposed between the resistant material pattern and the interlayer insulating layer, and extending between the resistant material pattern and the lower electrode, wherein the resistant material pattern has a higher resistance than the phase change pattern, and an upper electrode in contact with the phase change pattern, the upper electrode being electrically connected to the lower electrode through the phase change pattern.
摘要:
Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. Formation of an integrated circuit memory cell include forming a first electrode on a substrate. An insulation layer is formed on the substrate with an opening that exposes at least a portion of a first electrode. An amorphous variable resistivity material is formed on the first electrode and extends away from the first electrode along sidewalls of the opening. A crystalline variable resistivity material is formed in the opening on the amorphous variable resistivity material. A second electrode is formed on the crystalline variable resistivity material.
摘要:
The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.
摘要:
In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
摘要翻译:一方面,提供了形成相变材料层的方法。 该方法包括将包含式1的组合物的反应气体供应到反应室中,将包含Ge(II)的第一源供应到反应室中,并将第二源供应到反应室中。 式1是NR1R2R3,其中R1,R2和R3各自独立地选自H,CH3,C2H5,C3H7,C4H9,Si(CH3)3,NH2,NH(CH3),N(CH3) 2,NH(C 2 H 5)和N(C 2 H 5)2。
摘要:
In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
摘要翻译:一方面,提供了形成相变材料层的方法。 该方法包括将包含式1的组合物的反应气体供应到反应室中,将包含Ge(II)的第一源供应到反应室中,并将第二源供应到反应室中。 式1是NR1R2R3,其中R1,R2和R3各自独立地选自H,CH3,C2H5,C3H7,C4H9,Si(CH3)3,NH2,NH(CH3),N(CH3) 2,NH(C 2 H 5)和N(C 2 H 5)2。
摘要:
In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
摘要:
In one aspect, a method of forming a phase change material layer is provided. The method includes supplying a reaction gas including the composition of Formula 1 into a reaction chamber, supplying a first source which includes Ge(II) into the reaction chamber, and supplying a second source into the reaction chamber. Formula 1 is NR1R2R3, where R1, R2 and R3 are each independently at least one selected from the group consisting of H, CH3, C2H5, C3H7, C4H9, Si(CH3)3, NH2, NH(CH3), N(CH3)2, NH(C2H5) and N(C2H5)2.
摘要翻译:一方面,提供了形成相变材料层的方法。 该方法包括将包含式1的组合物的反应气体供应到反应室中,将包含Ge(II)的第一源供应到反应室中,并将第二源供应到反应室中。 式1是NR1R2R3,其中R1,R2和R3各自独立地选自H,CH3,C2H5,C3H7,C4H9,Si(CH3)3,NH2,NH(CH3),N(CH3) 2,NH(C 2 H 5)和N(C 2 H 5)2。
摘要:
Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. Formation of an integrated circuit memory cell include forming a first electrode on a substrate. An insulation layer is formed on the substrate with an opening that exposes at least a portion of a first electrode. An amorphous variable resistivity material is formed on the first electrode and extends away from the first electrode along sidewalls of the opening. A crystalline variable resistivity material is formed in the opening on the amorphous variable resistivity material. A second electrode is formed on the crystalline variable resistivity material.
摘要:
Provided are methods of forming a material layer by chemically adsorbing metal atoms to a substrate having anions formed on the surface thereof, and a method of fabricating a memory device by using the material layer forming method. Accordingly, a via hole with a small diameter can be filled with a material layer without forming voids or seams. Thus, a reliable memory device can be obtained.