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    Plasma polymerized electron beam resist
    1.
    发明授权
    Plasma polymerized electron beam resist 失效
    等离子体聚合电子束抗蚀剂

    公开(公告)号：US06855646B2

    公开(公告)日：2005-02-15

    申请号：US10131030

    申请日：2002-04-25

    申请人： Yousef Awad ,  Éric Lavallée ,  Jacques Beauvais ,  Dominique Drouin

    发明人： Yousef Awad ,  Éric Lavallée ,  Jacques Beauvais ,  Dominique Drouin

    IPC分类号： G03F7/004 ,  G03F7/038 ,  G03F7/20 ,  G03F7/36 ,  G03F7/38 ,  H01L21/027 ,  H01L21/311 ,  H01L21/31 ,  H01L21/469

    CPC分类号： G03F1/78 ,  G03F7/0046 ,  G03F7/038 ,  G03F7/38 ,  H01L21/0277 ,  H01L21/31138 ,  Y10S438/948 ,  Y10S438/95

    摘要： A process for producing a pattern of negative electron beam resist comprises: depositing a layer of plasma polymerized fluoropolymer on a face of a substrate, the plasma polymerized fluoropolymer forming the negative electron beam resist; producing an electron beam; moving the electron beam on the layer of plasma polymerized fluoropolymer to define the pattern, the layer then having exposed fluoropolymer areas defining the pattern and unexposed fluoropolymer areas; and removing the unexposed fluoropolymer areas to leave only the pattern on the face of the substrate. According to an alternative, the process comprises: depositing the layer of negative electron beam resist on a face of a substrate; producing an electron beam; moving the electron beam on the layer of negative electron beam resist to define the pattern, the layer then having exposed resist areas defining the pattern and unexposed resist areas; treating the patterned layer with a base solution to decrease a dry etch resistance of the unexposed resist areas; and dry etching the unexposed resist areas to leave only the pattern on the face of the substrate.

    摘要翻译： 用于制造负电子束抗蚀剂图案的方法包括：在基板的表面上沉积等离子体聚合的氟聚合物层，等离子体聚合的含氟聚合物形成负电子束抗蚀剂; 产生电子束; 将等离子体聚合的氟聚合物层上的电子束移动以限定图案，然后该层具有限定图案和未曝光的含氟聚合物区域的暴露的含氟聚合物区域; 并除去未曝光的含氟聚合物区域，仅留下基材表面上的图案。 根据替代方案，该方法包括：在衬底的表面上沉积负电子束抗蚀剂层; 产生电子束; 将电子束移动到负电子束抗蚀剂层上以限定图案，然后该层具有限定图案和未曝光抗蚀剂区域的曝光的抗蚀剂区域; 用基底溶液处理图案化层以降低未曝光的抗蚀剂区域的耐干蚀刻电阻; 并且干燥地蚀刻未曝光的抗蚀剂区域，以仅留下衬底的表面上的图案。

    Method of producing an etch-resistant polymer structure using electron beam lithography
    2.
    发明授权
    Method of producing an etch-resistant polymer structure using electron beam lithography 失效
    使用电子束光刻制造耐蚀刻聚合物结构的方法

    公开(公告)号：US06777167B2

    公开(公告)日：2004-08-17

    申请号：US10103643

    申请日：2002-03-20

    申请人： Éric Lavallée ,  Jacques Beauvais ,  Dominique Drouin ,  Mëlanie Cloutier

    发明人： Éric Lavallée ,  Jacques Beauvais ,  Dominique Drouin ,  Mëlanie Cloutier

    IPC分类号： G03F900

    CPC分类号： G03F1/22 ,  G03F7/0045 ,  G03F7/2059

    摘要： The present invention relates to a method of producing a structure of etch-resistant polymer on a substrate. A layer of sterol capable of polymerizing to form this structure is first deposited on a face of the substrate. Then, a first region of the layer of sterol is exposed to an electron beam to locally polymerize this layer and form the structure of etch-resistant polymer. A second region of the layer of sterol that has not been exposed to the electron beam is removed to leave on the face of the substrate only the structure of etch-resistant polymer. Finally, a region of the face of the substrate not covered by the structure of etch-resistant polymer can be etched away, and the structure of etch-resistant polymer removed following this etching.

    摘要翻译： 本发明涉及在衬底上制造耐蚀刻聚合物结构的方法。 首先将能够聚合形成该结构的固醇层沉积在基材的表面上。 然后，将固醇层的第一区域暴露于电子束以局部聚合该层并形成耐蚀刻聚合物的结构。 去除未暴露于电子束的固醇层的第二区域，仅在基材的表面上留下耐腐蚀聚合物的结构。 最后，可以蚀刻掉不被耐蚀刻聚合物结构覆盖的衬底的表面的区域，并且在该蚀刻之后除去耐蚀刻聚合物的结构。

    Fabrication of structures of metal/semiconductor compound by X-ray/EUV projection lithography
    3.
    发明授权
    Fabrication of structures of metal/semiconductor compound by X-ray/EUV projection lithography 失效
    通过X射线/ EUV投影光刻制作金属/半导体化合物的结构

    公开(公告)号：US06897140B2

    公开(公告)日：2005-05-24

    申请号：US10467148

    申请日：2001-02-05

    申请人： Dominique Drouin ,  Eric Lavallée ,  Jacques Beauvais

    发明人： Dominique Drouin ,  Eric Lavallée ,  Jacques Beauvais

    IPC分类号： B81C1/00 ,  G03F1/22 ,  G03F1/24 ,  G03F1/50 ,  G03F7/004 ,  H01L21/027 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/44

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/22 ,  G03F1/24 ,  G03F7/0042 ,  G03F7/0043 ,  Y10S430/168

    摘要： A lithography method for fabricating structures of etch-resistant metal-semiconductor compound on a substrate with sub-micrometer scale resolutions is described. Superposed layers of metal and semiconductor capable of reacting with each other to form etch-resistant metal/semiconductor compound are deposited on the substrate. Radiation from a X-ray/EUV source propagates through a patterned X-ray transparent/EUV reflective mask and is projected on the superposed metal and semiconductor layers. The X-ray transparent mask includes X-ray absorbing patterns imparted to the X-ray radiation while the EUV reflective mask includes EUV absorbing patterns also imparted to the EUV radiation. The energy of X-ray/EUV photons is absorbed locally by the metal and semiconductor layers. Absorption of this energy induces a reaction between the two layers responsible for the formation of etch-resistant metal/semiconductor compound with structures corresponding to the patterns imparted to the radiation by the X-ray/EUV mask. The metal layer is subsequently etched using selective plasma or wet etching, leaving the structures of etch-resistant metal/semiconductor compound intact. The semiconductor layer may also be etched using selective plasma or wet etching, also leaving the structures of etch-resistant metal/semiconductor compound intact. The underlying layers of the substrate may also be partially or completely etched away using selective plasma or wet etching. Again, the structures of etch resistant metal/semiconductor compound protects the substrate against etching whereby these structures form corresponding patterns in the underlying layers of the substrate.

    摘要翻译： 描述了一种用于在亚微米尺度分辨率的基板上制造耐蚀刻金属 - 半导体化合物的结构的光刻方法。 能够彼此反应以形成耐蚀刻金属/半导体化合物的金属和半导体层的叠加层沉积在基板上。 来自X射线/ EUV源的辐射通过图案化的X射线透明/ EUV反射掩模传播并且投影在叠加的金属和半导体层上。 X射线透明掩模包括施加到X射线辐射的X射线吸收图案，而EUV反射掩模包括也赋予EUV辐射的EUV吸收图案。 X射线/ EUV光子的能量被金属和半导体层局部吸收。 这种能量的吸收引起负责形成耐蚀刻金属/半导体化合物的两层之间的反应，其结构对应于通过X射线/ EUV掩模赋予辐射的图案。 随后使用选择性等离子体或湿法蚀刻来蚀刻金属层，留下抗腐蚀金属/半导体复合体的结构。 还可以使用选择性等离子体或湿法刻蚀来蚀刻半导体层，同时使得抗腐蚀金属/半导体复合体的结构完整。 使用选择性等离子体或湿式蚀刻，衬底的下层也可以部分或完全蚀刻掉。 同样，抗蚀刻金属/半导体化合物的结构保护基板免受蚀刻，由此这些结构在基底的下面的层中形成相应的图案。

    Method using sub-micron silicide structures formed by direct-write electron beam lithography for fabricating masks for extreme ultra-violet and deep ultra-violet lithography
    4.
    发明授权
    Method using sub-micron silicide structures formed by direct-write electron beam lithography for fabricating masks for extreme ultra-violet and deep ultra-violet lithography 失效
    使用通过直写式电子束光刻形成的亚微米硅化物结构的方法用于制造用于极紫外和深紫外光刻的掩模

    公开(公告)号：US06514877B1

    公开(公告)日：2003-02-04

    申请号：US09697403

    申请日：2000-10-27

    申请人： Jacques Beauvais ,  Dominique Drouin ,  Eric Lavallee

    发明人： Jacques Beauvais ,  Dominique Drouin ,  Eric Lavallee

    IPC分类号： H01L2131

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/38 ,  G03F1/78 ,  G03F1/80

    摘要： To fabricate masks for deep ultra-violet lithography and for extreme ultra-violet lithography, a layer of material opaque to deep ultra-violet radiation and an extreme ultra-violet radiation absorbent layer are each deposited successively with a layer of silicon and a layer of metal on a respective transparent substrate. A focused electron beam is displaced on the superposed layers of metal and silicon to form a structure of etch-resistant metal/silicon compound. The deep ultra-violet mask is then formed by etching the three layers to leave on the substrate, the metal/silicon compound structure with the extreme ultra-violet absorbent layer beneath it. The extreme ultra-violet mask is fabricated by forming the absorbent layer successively of an etch-stop sublayer, a repair buffer sublayer, and a sublayer of extreme ultra-violet radiation absorbent material, which, after etching, leaves on the substrate, the metal/silicon compound structure with the extreme ultra-violet radiation absorbent sub-layer and the repair buffer sublayer beneath it.

    摘要翻译： 为了制造用于深紫外线光刻和极紫外光刻的掩模，对深紫外线辐射不透明的材料层和极紫外辐射吸收层分别依次沉积有一层硅和一层 金属在相应的透明基板上。 聚焦的电子束在金属和硅的叠加层上移位以形成耐腐蚀金属/硅化合物的结构。 然后通过蚀刻三层来形成深紫外线掩模，以在基底上留下金属/硅化合物结构，其下面具有极端的紫外线吸收层。 最终的紫外线掩模是通过依次形成具有蚀刻停止子层，修复缓冲层子层和极紫外辐射吸收材料的子层的吸收层来制造的，蚀刻后在基底上留下金属 /硅复合结构与极紫外辐射吸收子层及其下的修复缓冲层。

    Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography
    5.
    发明授权
    Fabrication of sub-micron etch-resistant metal/semiconductor structures using resistless electron beam lithography 失效
    使用无阻抗电子束光刻制造亚微米抗蚀金属/半导体结构

    公开(公告)号：US06261938B1

    公开(公告)日：2001-07-17

    申请号：US09156009

    申请日：1998-09-17

    申请人： Jacques Beauvais ,  Dominique Drouin ,  Eric Lavallee

    发明人： Jacques Beauvais ,  Dominique Drouin ,  Eric Lavallee

    IPC分类号： H01L2144

    CPC分类号： B82Y10/00 ,  B82Y40/00 ,  G03F1/24 ,  G03F1/58 ,  G03F1/78 ,  G03F7/0002 ,  G03F7/2059

    摘要： A method for fabricating a sub-micron structure of etch-resistant metal/semiconductor compound on a substrate of semiconductor material comprises the step of depositing onto the substrate a layer of metal capable of reacting with the semiconductor material to form etch-resistant metal/semiconductor compound, and the step of producing a focused electron beam. The focused electron beam is applied to the layer of metal to locally heat the metal and semiconductor material and cause diffusion of the metal and semiconductor material in each other to form etch-resistant metal/semiconductor compound. The focused electron beam is displaced onto the layer of metal to form the structure of etch-resistant metal/semiconductor compound. Finally, the layer of metal is wet etched to leave on the substrate only the structure of metal/semiconductor compound. Following wet etching of the layer of metal, an oxygen plasma etch can be conducted to remove a carbon deposit formed at the surface of the structure of etch-resistant metal/semiconductor compound. Also, the substrate may be subsequently etched to remove a thin layer of metal rich semiconductor material formed at the surface of the substrate by reaction, at room temperature, of the metal and semiconductor material with each other.

    摘要翻译： 用于在半导体材料的衬底上制造耐蚀刻金属/半导体化合物的亚微米结构的方法包括在衬底上沉积能够与半导体材料反应以形成抗蚀刻金属/半导体的金属层的步骤 化合物和产生聚焦电子束的步骤。 将聚焦的电子束施加到金属层上以局部加热金属和半导体材料并引起金属和半导体材料彼此扩散以形成抗蚀刻金属/半导体化合物。 聚焦的电子束被置于金属层上以形成耐腐蚀金属/半导体化合物的结构。 最后，对金属层进行湿蚀刻，仅在衬底上留下金属/半导体化合物的结构。 在对金属层进行湿蚀刻之后，可以进行氧等离子体蚀刻以去除在抗蚀刻金属/半导体化合物的结构的表面形成的碳沉积物。 此外，可以随后蚀刻衬底以通过在室温下将金属和半导体材料彼此反应来除去形成在衬底表面上的富金属的半导体材料的薄层。

    Fabrication of sub-micron silicide structures on silicon using resistless electron beam lithography
    6.
    发明授权
    Fabrication of sub-micron silicide structures on silicon using resistless electron beam lithography 失效
    使用无阻抗电子束光刻在硅上制造亚微米硅化物结构

    公开(公告)号：US5918143A

    公开(公告)日：1999-06-29

    申请号：US821651

    申请日：1997-03-20

    申请人： Jacques Beauvais ,  Dominique Drouin ,  Eric Lavallee

    发明人： Jacques Beauvais ,  Dominique Drouin ,  Eric Lavallee

    IPC分类号： C30B31/20 ,  H01L21/44

    CPC分类号： H01L21/28518

    摘要： A method for fabricating a sub-micron structure of etch-resistant metal/semiconductor compound on a substrate of semiconductor material comprises the step of depositing onto the substrate a layer of metal capable of reacting with the semiconductor material to form etch-resistant metal/semiconductor compound, and the step of producing a focused electron beam. The focused electron beam is applied to the layer of metal to locally heat the metal and semiconductor material and cause diffusion of the metal and semiconductor material in each other to form etch-resistant metal/semiconductor compound. The focused electron beam is displaced onto the layer of metal to form the structure of etch-resistant metal/semiconductor compound. Finally, the layer of metal is wet etched to leave on the substrate only the structure of metal/semiconductor compound. Following wet etching of the layer of metal, an oxygen plasma etch can be conducted to remove a carbon deposit formed at the surface of the structure of etch-resistant metal/semiconductor compound. Also, the substrate may be subsequently etched to remove a thin layer of metal rich semiconductor material formed at the surface of the substrate by reaction, at room temperature, of the metal and semiconductor material with each other.

    摘要翻译： 用于在半导体材料的衬底上制造耐蚀刻金属/半导体化合物的亚微米结构的方法包括在衬底上沉积能够与半导体材料反应以形成抗蚀刻金属/半导体的金属层的步骤 化合物和产生聚焦电子束的步骤。 将聚焦的电子束施加到金属层上以局部加热金属和半导体材料并引起金属和半导体材料彼此扩散以形成抗蚀刻金属/半导体化合物。 聚焦的电子束被置于金属层上以形成耐腐蚀金属/半导体化合物的结构。 最后，对金属层进行湿蚀刻，仅在衬底上留下金属/半导体化合物的结构。 在对金属层进行湿蚀刻之后，可以进行氧等离子体蚀刻以去除在抗蚀刻金属/半导体化合物的结构的表面形成的碳沉积物。 此外，可以随后蚀刻衬底以通过在室温下将金属和半导体材料彼此反应来除去形成在衬底表面上的富金属的半导体材料的薄层。