利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

125 条记录 (耗时 0.025 秒)

    Reverse connection MTJ cell for STT MRAM
    1.
    发明授权
    Reverse connection MTJ cell for STT MRAM 有权
    用于STT MRAM的反向连接MTJ单元

    公开(公告)号：US08416600B2

    公开(公告)日：2013-04-09

    申请号：US12626092

    申请日：2009-11-25

    申请人： Chun-Jung Lin ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

    发明人： Chun-Jung Lin ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

    IPC分类号： G11C11/00

    CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/12

    摘要： Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).

    摘要翻译： 本文公开了用于MRAM的反向连接STT MTJ元件的装置和方法，以在将MTJ元件的磁化从平行方向切换到反平行方向时克服源退化效应。 具有反向连接MTJ元件的MRAM的存储单元包括具有源极，栅极和漏极的开关器件和具有自由层，固定层和绝缘体层的反向连接MTJ器件， 自由层和固定层。 反连接MTJ器件的自由层连接到开关器件的漏极，固定层连接到位线（BL）。 反向连接MTJ设备将由源退化效应引起的存储器单元的较低IMTJ能力应用于较不严格的IMTJ（AP-> P），同时为更苛刻的IMTJ（P-> AP）保持较高的IMTJ能力。

    SPIN TORQUE TRANSFER MAGNETIC TUNNEL JUNCTION STRUCTURE
    2.
    发明申请
    SPIN TORQUE TRANSFER MAGNETIC TUNNEL JUNCTION STRUCTURE 有权
    旋转转矩磁铁隧道结构

    公开(公告)号：US20100258886A1

    公开(公告)日：2010-10-14

    申请号：US12422579

    申请日：2009-04-13

    申请人： Yu-Jen Wang ,  Ya-Chen Kao ,  Chun-Jung Lin

    发明人： Yu-Jen Wang ,  Ya-Chen Kao ,  Chun-Jung Lin

    IPC分类号： H01L29/82 ,  H01L21/00

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

    摘要： The present disclosure provides a semiconductor memory device. The device includes a bottom electrode over a semiconductor substrate; an anti-ferromagnetic layer disposed over the bottom electrode; a pinned layer disposed over the anti-ferromagnetic layer; a barrier layer disposed over the pinned layer; a first ferromagnetic layer disposed over the barrier layer; a buffer layer disposed over the first ferromagnetic layer, the buffer layer including tantalum; a second ferromagnetic layer disposed over the buffer layer; and a top electrode disposed over the second ferromagnetic layer.

    摘要翻译： 本公开提供一种半导体存储器件。 该器件包括在半导体衬底上的底部电极; 设置在底部电极上的反铁磁层; 设置在反铁磁层上的钉扎层; 设置在被钉扎层上的阻挡层; 设置在阻挡层上的第一铁磁层; 设置在所述第一铁磁层上的缓冲层，所述缓冲层包括钽; 设置在所述缓冲层上的第二铁磁层; 以及设置在第二铁磁层上的顶电极。

    Spin torque transfer magnetic tunnel junction structure
    4.
    发明授权
    Spin torque transfer magnetic tunnel junction structure 有权
    自旋扭矩传递磁隧道结结构

    公开(公告)号：US07834410B2

    公开(公告)日：2010-11-16

    申请号：US12422579

    申请日：2009-04-13

    申请人： Yu-Jen Wang ,  Ya-Chen Kao ,  Chun-Jung Lin

    发明人： Yu-Jen Wang ,  Ya-Chen Kao ,  Chun-Jung Lin

    IPC分类号： H01L29/82 ,  G11C11/02

    CPC分类号： H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

    摘要： The present disclosure provides a semiconductor memory device. The device includes a bottom electrode over a semiconductor substrate; an anti-ferromagnetic layer disposed over the bottom electrode; a pinned layer disposed over the anti-ferromagnetic layer; a barrier layer disposed over the pinned layer; a first ferromagnetic layer disposed over the barrier layer; a buffer layer disposed over the first ferromagnetic layer, the buffer layer including tantalum; a second ferromagnetic layer disposed over the buffer layer; and a top electrode disposed over the second ferromagnetic layer.

    摘要翻译： 本公开提供一种半导体存储器件。 该器件包括在半导体衬底上的底部电极; 设置在底部电极上的反铁磁层; 设置在反铁磁层上的钉扎层; 设置在被钉扎层上的阻挡层; 设置在阻挡层上的第一铁磁层; 设置在所述第一铁磁层上的缓冲层，所述缓冲层包括钽; 设置在所述缓冲层上的第二铁磁层; 以及设置在第二铁磁层上的顶电极。

    MRAM device with continuous MTJ tunnel layers
    5.
    发明授权
    MRAM device with continuous MTJ tunnel layers 失效
    具有连续MTJ隧道层的MRAM器件

    公开(公告)号：US07683447B2

    公开(公告)日：2010-03-23

    申请号：US11854478

    申请日：2007-09-12

    申请人： Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

    发明人： Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

    IPC分类号： H01L29/92

    CPC分类号： B82Y10/00 ,  G11C11/15 ,  H01L27/228

    摘要： A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic layer; forming a free magnetic layer, having magnetic moments aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer; forming a hard mask on the free magnetic layer partially covering the free magnetic layer; and unmagnetizing portions of the free magnetic layer uncovered by the hard mask for defining one or more magnetic tunnel junction (MTJ) units.

    摘要翻译： 一种制造具有多个存储单元的磁阻随机存取存储器（MRAM）器件的方法包括：形成具有固定在预定方向上的磁矩的固定磁性层; 在固定磁性层上形成隧道层; 在隧道层上形成具有通过施加电磁场可调整方向的磁矩的自由磁性层; 在部分覆盖自由磁性层的自由磁性层上形成硬掩模; 以及由硬掩模未覆盖的自由磁性层的非磁化部分，用于限定一个或多个磁性隧道结（MTJ）单元。

    MRAM Device with Continuous MTJ Tunnel Layers
    7.
    发明申请
    MRAM Device with Continuous MTJ Tunnel Layers 失效
    具有连续MTJ隧道层的MRAM设备

    公开(公告)号：US20090065883A1

    公开(公告)日：2009-03-12

    申请号：US11854478

    申请日：2007-09-12

    申请人： Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

    发明人： Yu-Jen Wang ,  Young-Shying Chen ,  Ya-Chen Kao ,  Chun-Jung Lin

    IPC分类号： H01L29/82 ,  H01L21/00

    CPC分类号： B82Y10/00 ,  G11C11/15 ,  H01L27/228

    摘要： A method for fabricating a magnetoresistive random access memory (MRAM) device having a plurality of memory cells includes: forming a fixed magnetic layer having magnetic moments fixed in a predetermined direction; forming a tunnel layer over the fixed magnetic layer; forming a free magnetic layer, having magnetic moments aligned in a direction that is adjustable by applying an electromagnetic field, over the tunnel layer; forming a hard mask on the free magnetic layer partially covering the free magnetic layer; and unmagnetizing portions of the free magnetic layer uncovered by the hard mask for defining one or more magnetic tunnel junction (MTJ) units.

    摘要翻译： 一种制造具有多个存储单元的磁阻随机存取存储器（MRAM）器件的方法包括：形成具有固定在预定方向上的磁矩的固定磁性层; 在固定磁性层上形成隧道层; 在隧道层上形成具有通过施加电磁场可调整方向的磁矩的自由磁性层; 在部分覆盖自由磁性层的自由磁性层上形成硬掩模; 以及由硬掩模未覆盖的自由磁性层的非磁化部分，用于限定一个或多个磁性隧道结（MTJ）单元。

    REVERSE CONNECTION MTJ CELL FOR STT MRAM
    8.
    发明申请
    REVERSE CONNECTION MTJ CELL FOR STT MRAM 有权
    反向连接用于STT MRAM的MTJ单元

    公开(公告)号：US20110122674A1

    公开(公告)日：2011-05-26

    申请号：US12626092

    申请日：2009-11-25

    申请人： CHUN-JUNG LIN ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

    发明人： CHUN-JUNG LIN ,  Yu-Jen Wang ,  Ya-Chen Kao ,  Wen-Cheng Chen ,  Ming-Te Liu

    IPC分类号： G11C11/22 ,  H01L29/82 ,  H01L21/28

    CPC分类号： H01L43/08 ,  G11C11/16 ,  G11C11/1659 ,  H01L27/228 ,  H01L43/12

    摘要： Apparatus and methods are disclosed herein for a reverse-connection STT MTJ element of a MRAM to overcome the source degeneration effect when switching the magnetization of the MTJ element from the parallel to the anti-parallel direction. A memory cell of a MRAM having a reverse-connection MTJ element includes a switching device having a source, a gate, and a drain, and a reverse-connection MTJ device having a free layer, a fixed layer, and an insulator layer interposed between the free layer and the fixed layer. The free layer of the reverse-connection MTJ device is connected to the drain of the switching device and the fixed layer is connected to a bit line (BL). The reverse-connection MTJ device applies the lower IMTJ capability of the memory cell caused by the source degeneration effect to the less stringent IMTJ(AP->P) while preserving the higher IMTJ capability for the more demanding IMTJ(P->AP).

    摘要翻译： 本文公开了用于MRAM的反向连接STT MTJ元件的装置和方法，以在将MTJ元件的磁化从平行方向切换到反平行方向时克服源退化效应。 具有反向连接MTJ元件的MRAM的存储单元包括具有源极，栅极和漏极的开关器件和具有自由层，固定层和绝缘体层的反向连接MTJ器件， 自由层和固定层。 反连接MTJ器件的自由层连接到开关器件的漏极，固定层连接到位线（BL）。 反向连接MTJ设备将由源退化效应引起的存储器单元的较低IMTJ能力应用于较不严格的IMTJ（AP-> P），同时为更苛刻的IMTJ（P-> AP）保持较高的IMTJ能力。

    Sacrifice layer structure and method for magnetic tunnel junction (MTJ) etching process
    9.
    发明授权
    Sacrifice layer structure and method for magnetic tunnel junction (MTJ) etching process 有权
    牺牲层结构和磁隧道结（MTJ）蚀刻工艺

    公开(公告)号：US08629518B2

    公开(公告)日：2014-01-14

    申请号：US12828593

    申请日：2010-07-01

    申请人： Yu-Jen Wang ,  Ya-Chen Kao ,  Chun-Jung Lin

    发明人： Yu-Jen Wang ,  Ya-Chen Kao ,  Chun-Jung Lin

    IPC分类号： H01L29/82

    CPC分类号： H01L43/12 ,  H01L43/08

    摘要： A magnetic tunnel junction (MTJ) etching process uses a sacrifice layer. An MTJ cell structure includes an MTJ stack with a first magnetic layer, a second magnetic layer, and a tunnel barrier layer in between the first magnetic layer and the second magnetic layer, and a sacrifice layer adjacent to the second magnetic layer, where the sacrifice layer protects the second magnetic layer in the MTJ stack from oxidation during an ashing process. The sacrifice layer does not increase a resistance of the MTJ stack. The sacrifice layer can be made of Mg, Cr, V, Mn, Ti, Zr, Zn, or any alloy combination thereof, or any other suitable material. The sacrifice layer can be multi-layered and/or have a thickness ranging from 5 Å to 400 Å. The MTJ cell structure can have a top conducting layer over the sacrifice layer.

    摘要翻译： 磁隧道结（MTJ）蚀刻工艺使用牺牲层。 MTJ单元结构包括在第一磁性层和第二磁性层之间的具有第一磁性层，第二磁性层和隧道势垒层的MTJ堆叠以及与第二磁性层相邻的牺牲层，其中牺牲 层在灰化过程中保护MTJ堆叠中的第二磁性层免受氧化。 牺牲层不会增加MTJ堆叠的电阻。 牺牲层可以由Mg，Cr，V，Mn，Ti，Zr，Zn或其任何合金组合或任何其它合适的材料制成。 牺牲层可以是多层的和/或具有从5到400的厚度。 MTJ单元结构可以在牺牲层上方具有顶部导电层。