公开(公告)号：US08710560B2

公开(公告)日：2014-04-29

申请号：US11835814

申请日：2007-08-08

申请人： Yuan-Chih Hsieh ,  Shih-Chang Liu ,  Shih-Chi Fu ,  Tzu-Hsuan Hsu ,  Chung-Yi Yu ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Yuan-Chih Hsieh ,  Shih-Chang Liu ,  Shih-Chi Fu ,  Tzu-Hsuan Hsu ,  Chung-Yi Yu ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H01L31/062

CPC分类号： H01L27/14643 ,  H01L24/05 ,  H01L27/14636 ,  H01L2224/05556 ,  H01L2924/12043 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a front surface and a back surface, elements formed on the substrate, interconnect metal layers formed over the front surface of the substrate, including a topmost interconnect metal layer, an inter-metal dielectric for insulating each of the plurality of interconnect metal layers, and a bonding pad disposed within the inter-metal dielectric, the bonding pad in contact with one of the interconnect metal layers other than the topmost interconnect metal layer.

摘要翻译： 半导体器件包括具有前表面和后表面的半导体衬底，形成在衬底上的元件，形成在衬底的前表面上的互连金属层，包括最上面的互连金属层，用于绝缘的金属间电介质 所述多个互连金属层和设置在所述金属间电介质内的接合焊盘，所述接合焊盘与所述互连金属层中的一个互连金属层之外的最上面的互连金属层接触。

公开(公告)号：US20090039452A1

公开(公告)日：2009-02-12

申请号：US11835814

申请日：2007-08-08

申请人： Yuan-Chih Hsieh ,  Shih-Chang Liu ,  Shih-Chi Fu ,  Tzu-Hsuan Hsu ,  Chung-Yi Yu ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

发明人： Yuan-Chih Hsieh ,  Shih-Chang Liu ,  Shih-Chi Fu ,  Tzu-Hsuan Hsu ,  Chung-Yi Yu ,  Gwo-Yuh Shiau ,  Chia-Shiung Tsai

IPC分类号： H01L31/00

CPC分类号： H01L27/14643 ,  H01L24/05 ,  H01L27/14636 ,  H01L2224/05556 ,  H01L2924/12043 ,  H01L2924/00

摘要： A semiconductor device includes a semiconductor substrate having a front surface and a back surface, elements formed on the substrate, interconnect metal layers formed over the front surface of the substrate, including a topmost interconnect metal layer, an inter-metal dielectric for insulating each of the plurality of interconnect metal layers, and a bonding pad disposed within the inter-metal dielectric, the bonding pad in contact with one of the interconnect metal layers other than the topmost interconnect metal layer.

摘要翻译： 半导体器件包括具有前表面和后表面的半导体衬底，形成在衬底上的元件，形成在衬底的前表面上的互连金属层，包括最上面的互连金属层，用于绝缘的金属间电介质 所述多个互连金属层和设置在所述金属间电介质内的接合焊盘，所述接合焊盘与所述互连金属层中的一个互连金属层之外的最上面的互连金属层接触。

公开(公告)号：US20080044984A1

公开(公告)日：2008-02-21

申请号：US11465047

申请日：2006-08-16

申请人： Yuan-Chih Hsieh ,  Chung-Yi Yu ,  Gwo-Yuh Shiau ,  Shih-Chi Fu ,  Ming Chyi Liu ,  Chia-Shiung Tsai

发明人： Yuan-Chih Hsieh ,  Chung-Yi Yu ,  Gwo-Yuh Shiau ,  Shih-Chi Fu ,  Ming Chyi Liu ,  Chia-Shiung Tsai

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/304 ,  H01L27/14618 ,  H01L27/14687 ,  H01L2924/0002 ,  H01L2924/00

摘要： A process for forming backside illuminated devices is disclosed. Specifically, the process reduces processing damage to wafers caused by poor bond quality at the wafer edge ring. In one embodiment, a wafer edge trimming step is implemented prior to bonding the wafer to the substrate. A pre-grind blade is used to create a straight edge around the wafer perimeter, eliminating any sharp edges. In another embodiment, edge trimming is performed after the wafer has been bonded to the substrate, and a pre-grind blade is used to remove portion of the wafer edge ring subject to poor bonding quality before grinding. The final thickness of the ground wafer is about 50 microns in either case.

摘要翻译： 公开了一种用于形成背面照明装置的工艺。 具体地说，该方法减少了由于晶片边缘环上的接合质量差而导致的对晶片的加工损坏。 在一个实施例中，在将晶片接合到基板之前实现晶片边缘修剪步骤。 预磨刀片用于在晶片周边周围创建直边，消除任何尖锐边缘。 在另一个实施例中，在晶片已经结合到基板之后进行边缘修整，并且在研磨之前使用预研磨刀片来去除在接合质量差的条件下的部分晶片边缘环。 在任一情况下，接地晶片的最终厚度为约50微米。

公开(公告)号：US20080237761A1

公开(公告)日：2008-10-02

申请号：US11695363

申请日：2007-04-02

申请人： Shih-Chi Fu ,  Chia-Shiung Tsai ,  Gwo-Yuh Shiau ,  Ming Chyi Liu ,  Feng-Jia Shiu ,  Tzu-Hsuan Hsu

发明人： Shih-Chi Fu ,  Chia-Shiung Tsai ,  Gwo-Yuh Shiau ,  Ming Chyi Liu ,  Feng-Jia Shiu ,  Tzu-Hsuan Hsu

IPC分类号： H01L31/0232

CPC分类号： H01L27/14603 ,  H01L27/14627 ,  H01L27/1464

摘要： A system and method for enhancing light sensitivity of a back-side illumination image sensor are described. An integrated circuit includes a substrate and an image sensor device comprising at least one transistor formed over a first surface of the substrate and a photosensitive region. A color filter is disposed over a second surface of the substrate opposite the first surface thereof. A micro-lens structure is disposed between the second surface of the substrate and the color filter.

摘要翻译： 描述了用于提高背面照明图像传感器的光灵敏度的系统和方法。 集成电路包括基板和图像传感器装置，该装置包括形成在基板的第一表面上的至少一个晶体管和光敏区域。 滤色器设置在基板的与其第一表面相对的第二表面上。 微透镜结构设置在基板的第二表面和滤色器之间。

公开(公告)号：US20100151615A1

公开(公告)日：2010-06-17

申请号：US12710441

申请日：2010-02-23

申请人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

发明人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

IPC分类号： H01L31/18

CPC分类号： H01L27/14687 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14831

摘要： Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.

摘要翻译： 提供了图像传感器装置及其制造方法。 图像传感器装置的示例性实施例包括支撑衬底。 在支撑衬底上形成钝化结构。 在钝化结构上形成互连结构。 第一半导体层形成在互连结构上，具有第一和第二表面，其中第一和第二表面是相对的表面。 至少一个感光装置从其第一表面形成在第一半导体层之上/之中。 滤色器层从其第二表面形成在第一半导体层上。 在滤色器层上形成至少一个微透镜。

公开(公告)号：US20080061330A1

公开(公告)日：2008-03-13

申请号：US11531290

申请日：2006-09-13

申请人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

发明人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

IPC分类号： H01L31/062

CPC分类号： H01L27/14687 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14831

摘要： Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.

摘要翻译： 提供了图像传感器装置及其制造方法。 图像传感器装置的示例性实施例包括支撑衬底。 在支撑衬底上形成钝化结构。 在钝化结构上形成互连结构。 第一半导体层形成在互连结构上，具有第一和第二表面，其中第一和第二表面是相对的表面。 至少一个感光装置从其第一表面形成在第一半导体层之上/之中。 滤色器层从其第二表面形成在第一半导体层上。 在滤色器层上形成至少一个微透镜。

公开(公告)号：US07883926B2

公开(公告)日：2011-02-08

申请号：US12710441

申请日：2010-02-23

申请人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

发明人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

IPC分类号： H01L21/00

CPC分类号： H01L27/14687 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14831

摘要： Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.

摘要翻译： 提供了图像传感器装置及其制造方法。 图像传感器装置的示例性实施例包括支撑衬底。 在支撑衬底上形成钝化结构。 在钝化结构上形成互连结构。 第一半导体层形成在互连结构上，具有第一和第二表面，其中第一和第二表面是相对的表面。 至少一个感光装置从其第一表面形成在第一半导体层之上/之中。 滤色器层从其第二表面形成在第一半导体层上。 在滤色器层上形成至少一个微透镜。

公开(公告)号：US07709872B2

公开(公告)日：2010-05-04

申请号：US11531290

申请日：2006-09-13

申请人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

发明人： Gwo-Yuh Shiau ,  Ming-Chyi Liu ,  Yuan-Chih Hsieh ,  Shih-Chi Fu ,  Chia-Shiung Tsai

IPC分类号： H01L31/0232

CPC分类号： H01L27/14687 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14831

摘要： Image sensor devices and methods for fabricating the same are provided. An exemplary embodiment of an image sensor device comprises a support substrate. A passivation structure is formed over the support substrate. An interconnect structure is formed over the passivation structure. A first semiconductor layer is formed over the interconnect structure, having a first and second surfaces, wherein the first and second surfaces are opposing surfaces. At least one light-sensing device is formed over/in the first semiconductor layer from a first surface thereof. A color filter layer is formed over the first semiconductor layer from a second surface thereof. At least one micro lens is formed over the color filter layer.

摘要翻译： 提供了图像传感器装置及其制造方法。 图像传感器装置的示例性实施例包括支撑衬底。 在支撑衬底上形成钝化结构。 在钝化结构上形成互连结构。 第一半导体层形成在互连结构上，具有第一和第二表面，其中第一和第二表面是相对的表面。 至少一个感光装置从其第一表面形成在第一半导体层之上/之中。 滤色器层从其第二表面形成在第一半导体层上。 在滤色器层上形成至少一个微透镜。

公开(公告)号：US07799654B2

公开(公告)日：2010-09-21

申请号：US11291880

申请日：2005-12-01

申请人： Yuan-Chih Hsieh ,  Chung-Yi Yu ,  Tsung-Hsun Huang ,  Tzu-Hsuan Hsu ,  Chia-Shiung Tsai

发明人： Yuan-Chih Hsieh ,  Chung-Yi Yu ,  Tsung-Hsun Huang ,  Tzu-Hsuan Hsu ,  Chia-Shiung Tsai

IPC分类号： H01L21/76 ,  H01L31/062 ,  H01L31/111 ,  H01L27/148 ,  H01L29/768

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687

摘要： An image sensor device includes a semiconductor substrate and a plurality of pixels on the substrate. An etch-stop layer is formed over the pixels and has a thickness less than about 600 Angstroms. The image sensor device further includes an interlayer dielectric (ILD) overlying the etch stop layer. The etch-stop layer has a refractive index less than about 2 and an extinction coefficient less than about 0.1.

摘要翻译： 图像传感器装置包括半导体衬底和衬底上的多个像素。 在像素上方形成蚀刻停止层，其厚度小于约600埃。 图像传感器装置还包括覆盖在蚀刻停止层上的层间电介质（ILD）。 蚀刻停止层的折射率小于约2，消光系数小于约0.1。

公开(公告)号：US20070048965A1

公开(公告)日：2007-03-01

申请号：US11291880

申请日：2005-12-01

申请人： Yuan-Chih Hsieh ,  Chung-Yi Yu ,  Tsung-Hsun Huang ,  Tzu-Hsuan Hsu ,  Chia-Shiung Tsai

发明人： Yuan-Chih Hsieh ,  Chung-Yi Yu ,  Tsung-Hsun Huang ,  Tzu-Hsuan Hsu ,  Chia-Shiung Tsai

IPC分类号： H01L21/76

CPC分类号： H01L27/14632 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/14687

摘要： An image sensor device includes a semiconductor substrate and a plurality of pixels on the substrate. An etch-stop layer is formed over the pixels and has a thickness less than about 600 Angstroms. The image sensor device further includes an interlayer dielectric (ILD) overlying the etch stop layer. The etch-stop layer has a refractive index less than about 2 and an extinction coefficient less than about 0.1.

摘要翻译： 图像传感器装置包括半导体衬底和衬底上的多个像素。 在像素上方形成蚀刻停止层，其厚度小于约600埃。 图像传感器装置还包括覆盖在蚀刻停止层上的层间电介质（ILD）。 蚀刻停止层的折射率小于约2，消光系数小于约0.1。